JPS59143074A - Microwave treating device - Google Patents

Abstract

PURPOSE:To make plasma treatment stable and efficient by the constitution wherein a plasma generating chamber and a vacuum treating chamber are separated by using a magic coupled circuit element. CONSTITUTION:A microwave oscillating part 12 is coupled to an A branching terminal 13 and a waveguide 14 is formed integrally so as to be coupled tightly to the terminal 13. A microwave transmission window 15 is disposed at the terminal end of the terminal 13, i.e., the boundary that contacts with C, D branching terminals 16. A B branching terminal 17 is disposed with a sample to be treated and is fixed to a vacuum treating chamber 18 which performs evacuation. A dummy load 19 is provided so as to have a non-reflection terminal end at both ends of the terminals 16 and an introducing port 20 for introducing reactive gas is provided. The microwave from magnetron 21 is transmitted to the waveguide 14 via an antenna 22, passes the window 15 and generate plasma in the terminal 16. The reactive gas from the port 20 reacts to generate active particles which are diffused from the terminal 17 into the chamber 18.

Description

【発明の詳細な説明】 （ａ）　　発明の技術分野 本発明はマイクロ波を照射して集積回路基板等の試料を
プラズマ処理するマイクロ波処理装置に係り、特にマイ
クロ波導入系にマジックＴ結合回路系子を用いたマイク
ロ波処理装置直の構成に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a microwave processing apparatus for plasma processing a sample such as an integrated circuit board by irradiating microwaves, and in particular, a microwave processing apparatus that uses a magic T coupling circuit in a microwave introduction system. This article relates to a direct configuration of a microwave processing device using a condenser.

（ｂ）技術の背景 集積回路基板に施す各棟の処理は厳しい管理条件のもと
で高い信頼度が要求される。例えばシリコン基板に熱酸
化膜を形成する熱酸化法やＭＯ８半導体形成においてイ
オン打込によって生ずる格子欠陥の活性化を計るために
行なうアニール法又は基板上に形成した金属膜のステノ
プカバレノチの改善、更には金属膜の結晶粒子を粗大化
する等の熱処理もその一つである。(b) Background of the technology High reliability is required for each process applied to integrated circuit boards under strict control conditions. For example, a thermal oxidation method to form a thermal oxide film on a silicon substrate, an annealing method used to activate lattice defects caused by ion implantation in the formation of MO8 semiconductors, or improvement of the stenop coverage of a metal film formed on a substrate. Another example is heat treatment to coarsen the crystal grains of the metal film.

一方微細パターンのエツチング技術は従来の化学薬品を
用いたウェ／トエノチング法から鞘ノ腿の商いドライエ
ツチング法へと移行している。、これ等の処理装置とし
てメカ的に構成が容易にとれ、低電力で励起するマイク
ロ波処理装置（は従来の鳥周波電界（主に１３．５６Ｍ
Ｈｚ）より高密度のプラズマが得られ高速性、制御性の
よさ自動化し易い点で近年多用されているう （Ｃ）　　従来技術と問題点 第１図は従来のマイクロ波処理装置を示す構成図である
。On the other hand, the etching technology for fine patterns has shifted from the conventional wet/tooth etching method using chemicals to a dry etching method. , these processing devices are mechanically easy to configure, and are excited by low power.
Hz) It has been widely used in recent years because it can obtain higher density plasma, has high speed, good controllability, and is easy to automate.(C) Conventional technology and problems Figure 1 is a configuration diagram showing a conventional microwave processing device. It is.

図においてマグネトロン２の発振によって発生したマイ
クロ波（通常２．４５ＧＨｚ）はアンテナ３を介して導
波管４を伝播し、更に誘電体で分る透過窓５を透過して
真空処理室６に誘導される。誘導されたマイクロ波はマ
イクロ波遮蔽板７とマイクロ波透過窓５の間でプラズマ
が発生する。このプラズマ発生部の略中心部にガス導入
管８を配設し、エツチング又はアッシング用の反応ガス
を導入する。真空処理室６には排気口９を設は一定圧（
１，０Ｔｏｒｒ）に減圧維持する。プラズマ発生部に反
応ガス例えばエツチング処理にはフォレンガス酸木等を
一定一に混合し、ガス導入Ｖ３′８よジ魯入する。ガス
反応によりプラズマ中のｌ占ツ住枇は拡散され基４反１
０上ガ多結晶シリコンや鷺化７リコンノ漠等をエツチン
グする。このように構成きれるマイクロ仮処理装置１が
一般的であるがマイクロ波は波長が短く、ンールド構造
が容易でない。例えば透過窓５を介してマイクロ波導波
首４と！（全処理室６との連結部はフラング及びＯリン
グ７−ル等によｐ）−ルされるが僅小な隙間からマイク
ロこともある。寸だ真空処理室６の形状又は不整合等に
よゆ反射波を生じ反射波はマイクロ波入射波と同一径路
を経て戻るため反射波のパワーが太きいとマグネトロン
２にダメージを与える。In the figure, microwaves (usually 2.45 GHz) generated by the oscillation of a magnetron 2 propagate through a waveguide 4 via an antenna 3, and then are guided into a vacuum processing chamber 6 through a transmission window 5 formed by a dielectric material. be done. The induced microwaves generate plasma between the microwave shielding plate 7 and the microwave transmission window 5. A gas introduction pipe 8 is disposed approximately at the center of this plasma generating section, and a reaction gas for etching or ashing is introduced therein. The vacuum processing chamber 6 is equipped with an exhaust port 9 that maintains a constant pressure (
Maintain the reduced pressure at 1.0 Torr). A reactive gas, such as phoenic acid wood for etching treatment, is mixed at a constant rate in the plasma generating part, and the mixture is directly introduced through the gas introduction V3'8. Due to the gas reaction, the l-occupancy in the plasma is diffused into groups 4 and 1.
Etching is performed on 0-layer polycrystalline silicon, 7-layer silicon, etc. Although the micro temporary processing device 1 that can be configured in this manner is common, the wavelength of microwaves is short and it is not easy to form a rolled structure. For example, through the transmission window 5 and the microwave waveguide neck 4! (The connection part with all the processing chambers 6 is connected with a flang, an O-ring 7, etc.), but there are cases where there is a small gap or a micro gap. Due to the shape or mismatch of the vacuum processing chamber 6, a reflected wave is generated and the reflected wave returns through the same path as the incident microwave wave, so if the power of the reflected wave is large, it will damage the magnetron 2.

（ｄ）　　発明の目的 不発明は上記の点に鑑みマジックＴ結合回路素子を用い
、プラズマ発生室と真空処理室とを分離する構成とした
マイクロ波処理装置を提供し、プラズマ処理の安定性及
び効率化を計ることを目的とする。(d) Purpose of the Invention In view of the above points, the present invention provides a microwave processing apparatus configured to separate a plasma generation chamber and a vacuum processing chamber by using a magic T coupling circuit element, thereby improving the stability of plasma processing and improving the stability of plasma processing. The purpose is to measure efficiency.

（ｅ）　　発明の構成 上記目的は本発明によればマイクロ反回路累子の８面及
びＨ而がそれぞれ四方向に分岐するマンツクＴ回路素子
金用い該マジックＴ回路素子の無反射終端をなす二つの
分岐端の何れか一方よりマイクロ波を誘導し、他の該分
岐端を真空処理室に連結し該回路素子の他の対向する該
無反射終端をなす該分岐端領域をプラズマ発生室となし
、該プラズマ発生室に活性ガスを導入して前記真空処理
室に設けた試料にプラズマ処理することによりて達せら
れる。(e) Structure of the Invention The above object, according to the present invention, is to form a non-reflective termination of the Magic T circuit element using gold, in which the eight faces and H of the micro anti-circuit resistor are branched in four directions, respectively. Microwaves are guided from one of the two branched ends, the other branched end is connected to a vacuum processing chamber, and the branched end region forming the other opposing non-reflection termination of the circuit element is used as a plasma generation chamber. This can be achieved by introducing an active gas into the plasma generation chamber and subjecting the sample provided in the vacuum processing chamber to plasma treatment.

（ｆ）　　発明の実ＪＡ例 以下本発明の実施例を図面により詳述する。(f) Actual JA example of invention Embodiments of the present invention will be described in detail below with reference to the drawings.

第２図に本発明に用いたマジックＴ回路素子を示す斜視
図、・財３．第４図は本発明の一実施例であるマイクロ
波処理装置を示す構成図であり、第３（７ｊは正面図、
第４図は０Ｉｌ１面図である。Fig. 2 is a perspective view showing the magic T circuit element used in the present invention. FIG. 4 is a configuration diagram showing a microwave processing apparatus which is an embodiment of the present invention, and the third (7j is a front view,
FIG. 4 is a 1-side view of 0Il.

似２図に示すマジックＴ回路素子１１の四方向に分岐さ
れる分岐端をそれぞれＡ、　Ｂ、　Ｃ，ＤとすＪ’Ｌ　
ｔｒｒＡ、８間には′屯磁界分布の関係で結合がなくま
たＴ分岐の特性７）・らＡからのマイクロ波入力はＣ，
ｌ）へ逆相で等分され、Ｂからのマイクロ波入力＋４　
Ｃ。The branch ends branching in four directions of the magic T circuit element 11 shown in Fig. 2 are respectively designated as A, B, C, and D.J'L
There is no coupling between trrA and trr8 due to the magnetic field distribution, and the characteristics of T-branch7)・The microwave input from trrA is C,
microwave input from B +4
C.

Ｄへ同相で等公式れる。Ｃ，Ｄに腎合負体工を接続して
Ａ、Ｂから桑会をとることにより、このマジックＴ回騎
累子１１はすべての分ｌｉｌ＆ｊ需（Ａ、１３．Ｃ，Ｄ
　）からの整合がとれたことになりＣ，Ｄ間のボ１１ｆ
付もなくなり無反射終演とすることができる。この７７
ソクＴ回路索子１１全グラスマ’Ｊｌ１４理装置ａのマ
イクロＪＩＹ人糸に用いると、例えばＡ分岐端からマイ
クロ波を誘導し、Ｂ分岐端に真空処理室を結合し、一方
Ｃ１■）分岐端エリアをプラズマ発生室となし、処理室
とプラズマ発生室を分離させ得ることに着目したもので
ある。We can use the same formula to D with the same phase. By connecting the kidney joint body to C and D and taking the kuwakai from A and B, this Magic T Kaikyeiko 11 can be created by connecting all parts lil & j demand (A, 13.C, D
) is now consistent, and the box 11f between C and D is aligned.
There will be no markings, and you can end the performance without any reflection. This 77
When used in the micro JIY thread of Soku T circuit cord 11 Zeno Grasma' Jl 14 physical equipment a, for example, microwaves are guided from the A branch end, a vacuum processing chamber is connected to the B branch end, and C1 ■) the branch end. The area is used as a plasma generation chamber, and attention is paid to the fact that the processing chamber and the plasma generation chamber can be separated.

本実施例によるマイクロ波処理装置の構成は第３゜第４
図に示すようにマイクロ波発振部１２をＡ分岐端１３に
結合し、マイクロ波を伝播する導波管１４はＡ分岐端１
３に密接な結合をなすよう一体的に形成されへ分岐端１
３の終端即ちＣ，Ｄ分岐端１６に接する境界にマイクロ
波透過窓１５を配設する。Ｂ分岐端１７は被処理試料を
配設し真空排気する真空処理室１８に固定される。また
Ｃ、　ｌ）分岐端１６の両端に無反射終端をなすようダ
ミーロード（整合負荷）１９を備え更に反応ガスを尋人
するガス導入口２０？１１−設けて構成される。The configuration of the microwave processing apparatus according to this embodiment is as follows:
As shown in the figure, the microwave oscillator 12 is coupled to the A branch end 13, and the waveguide 14 for propagating the microwave is connected to the A branch end 1.
The branch end 1 is integrally formed to form a tight connection to 3.
A microwave transmitting window 15 is disposed at the end of C.3, that is, at the boundary touching the C and D branch ends 16. The B branch end 17 is fixed to a vacuum processing chamber 18 in which a sample to be processed is placed and evacuated. C, l) A dummy load (matching load) 19 is provided at both ends of the branch end 16 to form a non-reflective termination, and a gas inlet 20 to 11 for introducing the reaction gas is provided.

マダイ・トロン２１の発振によって発生したマイクロ波
はアンテナ２２を介して導波管１４全伝ツ１「τしＡ分
１１反ｙ１．ｌ１１３の透過窓１５を透過しＣ，Ｉ）分
岐端１６内にプラズマ処理生する。ガス導入口２０より
反応ガスが導入され、発生したプラズマ中のカス反応に
より電気的に中性で不対電子を持った活性粒子（ラジカ
ル）がＢ分岐端１７より真空処理室１８に拡散きノし、
試料」二の多結晶シリコンや窒化シリコン膜性ヲエノチ
ングする。このような構成とすることによりプラズマ発
生室と真空処理室とを分離をせることができるため従来
に比して真空処理室の構造を簡素化でき既蔽板を用いる
事による金属汚染は防止される。又マジックＴ回路素子
を用いているため装置の整合は容易となり反射波の発生
がないためマイクロ波照射効率は向上し、マグネ１−　
ｏンの長寿命化が可能となる。Ａ、Ｂ分岐端の１βＪれ
かをプラズマモニタ用の窓とした、本発明の他の火施ｆ
ｌｌを第５図に示す。Microwaves generated by the oscillation of the Madai Tron 21 pass through the waveguide 14 through the antenna 22 and pass through the transmission window 15 of 113 (C, I) branch end 16. A reaction gas is introduced from the gas inlet 20, and active particles (radicals) that are electrically neutral and have unpaired electrons are generated from the B branch end 17 through the vacuum treatment due to the gas reaction in the generated plasma. Spread into room 18,
Sample 2: Polycrystalline silicon or silicon nitride film is etched. With this configuration, the plasma generation chamber and the vacuum processing chamber can be separated, so the structure of the vacuum processing chamber can be simplified compared to the conventional method, and metal contamination due to the use of shielded plates can be prevented. Ru. In addition, since the Magic T circuit element is used, it is easy to match the device and no reflected waves are generated, improving the microwave irradiation efficiency.
This makes it possible to extend the life of the on. Another fire application of the present invention in which 1βJ of the A and B branch ends is used as a window for plasma monitoring
ll is shown in FIG.

マイクロ波兄振都１２から伝播するマイク「１反を例え
ばＡ分岐端１３から人射芒せて（：、Ｄ分岐端１６Ｖｃ
プラズマヲ発生させる。Ｃ，Ｄ分岐端１６の底面に多数
の微細穴２３を設け、この微細穴２３よりプラズマ甲に
兄生する活性神を真空処理室１８に等大し、８分１眩端
」７をプラズマモニタ用の窓とするものである。従来モ
ニタ用窓は試料のブフスマ処理即ち熱処理又はエツチン
グ処理の観察するに対してプラズマ発生部の状態がマイ
クロ波の影響を受けることなく観察できる利点がある。For example, a microphone propagating from the microwave sensor 12 is emitted from the A branch end 13 (:, D branch end 16Vc).
Generate plasma. A large number of micro holes 23 are provided at the bottom of the C and D branch ends 16, and the active particles generated in the plasma shell are made equal in size to the vacuum processing chamber 18 through the micro holes 23, and the 1/8 dazzling end 7 is placed on a plasma monitor. It is intended to be used as a window for public use. The conventional monitoring window has an advantage in that the state of the plasma generation area can be observed without being affected by microwaves, compared to observing the Buchsma treatment, that is, heat treatment or etching treatment of a sample.

（ｇ）　　発明の効果 以上詳細に説明したように本発明のマジックＴ回路素子
を用いたマイクロ波処理装置どすることによりマイクロ
波をプラズマ発生室に閉じ込めることが可能となり、真
空処理室はマイクロ波による影響を受けない為、安定し
た雰囲気に保てる。(g) Effects of the Invention As explained in detail above, by using a microwave processing apparatus using the magic T circuit element of the present invention, it becomes possible to confine microwaves in the plasma generation chamber, and the vacuum processing chamber is A stable atmosphere can be maintained as it is not affected by

これによりプラズマ処理は従来に比して安定性。This makes plasma processing more stable than conventional methods.

１言顧性が侍ら几る。装置構成が容易でめり、従来のよ
うなマイクロ波遮薮構造ばｍ）素化さｎも　壕だ反射波
の影ψがないため効率のよいマイクロ仮人力が侍られ、
しかもマグイユトロンの長Ｎ　ｊｌ占化かｉ叶侍できる
等大きな効果がある。A samurai's opinion is clear. The equipment is easy to configure, and there is no shadow of reflected waves compared to the conventional microwave shielding structure.
What's more, it has great effects, such as being able to use the head of Maguilletron as a samurai.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来のマイクロ波処理装圃金丁す構成図、第２
図（徒不発明に用いたマジックＴ回路光子を示す斜視図
、第３図、第４図は不発明の一実力【ロガであるマイク
ロ波処理装Ｋを示す構成図、弔３１゛イ１は正１１）１
１ツー、ｔ？、＝１１ソ」はｊ口１ｊ面図、第５１ンｊ
は本発明の他の実ｈｉ１：　＋＜′ｌ）を示すマーイク
ロ彼処ｊｊｌｊ装置の構成図でｈるＯ 図中、１１　マジックＴ回路素子、１２　マイ固Ｙ ｌ鋺１ １８・・イ１−空処理室、１９・整骨負荷、２０　カス
？序入口、２１　　マクイ・トロン、２２　・アンテブ
込２３　・・、）り・１（”」穴。 一頂番 Ｘズパｊ °′； ′−゛−） −３６９− Ｍ檀 芝 第１阿 第２閃 浴３にFigure 1 is a configuration diagram of a conventional microwave processing equipment;
Figure (perspective view showing the magic T circuit photon used in the inventive process, Figures 3 and 4 are configuration diagrams showing the microwave processing system K, which is one of the inventive powers, Positive 11) 1
One two, t? , = 11 So" is the 51st page of the 51st page.
is a block diagram of a microscopic device showing another embodiment of the present invention (hi1: +<'l). In the figure, 11 Magic T circuit element, 12 Magic T circuit element, 12 18... Processing room, 19・Osteopathic load, 20 Scum? Introductory entrance, 21 Makui Tron, 22 ・Antebu included 23 ..., )ri 1 ("" hole. Ichichoban 2 flash bath 3

Claims (1)

【特許請求の範囲】[Claims] マイクロ波回路素子のＥ面及びＨ面がそれぞれ四方向に
分岐するマジックＴ回路素子を用い該マジックＴ回路素
子の無反射終端をなす二つの分岐端の倒れか一方よりマ
イクロ波を誘導し他の該分岐端をへ空処理室に連結し、
該回路素子の他の対向す−る該無反射終端′（ｉ−なす
該分岐端領域をプラズマ発生イとなし、該プラズマ発生
室に活性カスを導入して前記臭空処理室に設けた試料に
プラズマ処理を施すことを特徴とするマイクロ波処理装
置ａ。A magic T circuit element in which the E plane and the H plane of the microwave circuit element are branched into four directions, respectively, is used, and the microwave is guided from one side to the other by the collapse of the two branch ends forming the non-reflection termination of the magic T circuit element. Connecting the branched end to an empty processing chamber,
The other opposing non-reflection terminal end' (i) of the circuit element is used as a plasma generation chamber, and activated scum is introduced into the plasma generation chamber, and the sample is placed in the odor treatment chamber. A microwave processing apparatus a characterized in that it performs plasma processing on.