JPS59141273A - Thin-film device - Google Patents
Thin-film deviceInfo
- Publication number
- JPS59141273A JPS59141273A JP1380983A JP1380983A JPS59141273A JP S59141273 A JPS59141273 A JP S59141273A JP 1380983 A JP1380983 A JP 1380983A JP 1380983 A JP1380983 A JP 1380983A JP S59141273 A JPS59141273 A JP S59141273A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- film device
- layer
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000011521 glass Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- 238000004017 vitrification Methods 0.000 abstract description 5
- 239000005355 lead glass Substances 0.000 abstract description 2
- 238000001556 precipitation Methods 0.000 abstract description 2
- 238000007650 screen-printing Methods 0.000 abstract description 2
- 239000007921 spray Substances 0.000 abstract description 2
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 13
- 229910001220 stainless steel Inorganic materials 0.000 description 11
- 239000010935 stainless steel Substances 0.000 description 11
- 239000002184 metal Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 238000001354 calcination Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000006355 external stress Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、薄膜装置に関し、特に、圧力センナに適用さ
れて、導電性の良好な基板上に導電性薄膜素子を形成し
て出力信号などを取り出す必要のある薄膜装置に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film device, and in particular to a thin film device that is applied to a pressure sensor and requires forming a conductive thin film element on a substrate with good conductivity to extract an output signal, etc. Regarding.
従来から薄膜形成用の基板材料としては、ガラス、セラ
ミックスなどの高絶縁性材料、またはシリコンなどの半
導体材料が主として使用されているが、これらの材料は
、高価であり割れやすいため使用上制限される。このた
め、基板としてステンレスやＡ工などの金属基板を使用
する場合がある。特に、基板として、上記のような金属
基板を使用した場合、１）表面の平坦性が十分によいこ
と、１１）基板と導電性薄膜との絶縁性が十分によいこ
と、などの２点を考慮する必要がある。これらの解決策
として、従来。Conventionally, highly insulating materials such as glass and ceramics, or semiconductor materials such as silicon have been mainly used as substrate materials for forming thin films, but these materials are expensive and easily breakable, so their use is limited. Ru. For this reason, a metal substrate such as stainless steel or A metal substrate may be used as the substrate. In particular, when using a metal substrate as described above, two points are required: 1) the surface flatness is sufficiently good, and 11) the insulation between the substrate and the conductive thin film is sufficiently good. need to be considered. Conventional as these solutions.
ｉ）金属表面を０．０２〜０，１８位まで研摩したり。i) Polishing the metal surface to a depth of 0.02 to 0.18.
八〇
１１）金属表面にス濱ツタ、ＣＶＤ法などにより絶縁性
膜を形成する。ということがなされていたが、研摩費用
がかさむ上、絶縁性膜のピンホールが発生しやすい欠点
があった。8011) An insulating film is formed on the metal surface by a method such as shavings or CVD. However, this method had the disadvantage that polishing costs were high and pinholes were likely to occur in the insulating film.
本発明の目的は、上記従来の欠点を解決するためになさ
れたもので、安価でピンホールが少ない構造の薄膜装置
を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a thin film device that is inexpensive and has a structure with fewer pinholes.
本発明の他の目的は、基板上に形成された電導性薄膜素
子が機械的衝撃に十分耐えることができる薄膜装置を提
供することにある。Another object of the present invention is to provide a thin film device in which a conductive thin film element formed on a substrate can sufficiently withstand mechanical shock.
本発明のもっと他の目的は、熱伝導性がよく。Another object of the present invention is to provide a material with good thermal conductivity.
放熱板としても使用することができる薄膜装置を提供す
ることにある。An object of the present invention is to provide a thin film device that can also be used as a heat sink.
本発明の更に他の目的は、圧力センサのダイヤフラム基
板に応用した場合に、たわみ量のバラツギを所望の小さ
な値に抑えることができる薄膜装置を提供することにあ
る。Still another object of the present invention is to provide a thin film device that can suppress variations in deflection to a desired small value when applied to a diaphragm substrate of a pressure sensor.
本発明によれば、導電性の良好な基板と、その基板上に
形成された絶縁層と、その絶縁層上に形成された導電性
薄膜素子とを備えた薄膜装置において、前記絶縁層が、
ガラス化処理した層であることを特徴とする薄膜装置が
得られる。According to the present invention, in a thin film device including a substrate with good conductivity, an insulating layer formed on the substrate, and a conductive thin film element formed on the insulating layer, the insulating layer includes:
A thin film device is obtained which is characterized by a vitrified layer.
以下１図面を参照しながら本発明の一実施例について詳
細に説明する。An embodiment of the present invention will be described in detail below with reference to one drawing.
図面は１本発明による薄膜装置を圧力センサに適用した
場合の一実施例の構造を示す断面図である。図において
、１はステンレス基板１例えばＳＵＳであり、ステンレ
ス基板１の上にガラス化処理層２が形成されている。更
に、ガラス化処理層２上に電導性薄膜素子６及び電極４
が形成されている。次に、ガラス化処理層２の形成方法
について述べる。The drawing is a sectional view showing the structure of an embodiment in which a thin film device according to the present invention is applied to a pressure sensor. In the figure, 1 is a stainless steel substrate 1, for example, SUS, and a vitrified layer 2 is formed on the stainless steel substrate 1. Further, a conductive thin film element 6 and an electrode 4 are disposed on the vitrification treatment layer 2.
is formed. Next, a method for forming the vitrified layer 2 will be described.
上記ステンレス基板１は、ＳＵＳ板などの規格材を使用
しているので、その表面には、特に機械研摩や化学研摩
などを施す必要がない。ステンレス基板１表面を十分に
脱脂し、その表面に、鉛ガラスなどの低融点ガラスをス
クリーン印刷、沈殿法、スプレーガンなどにより塗布す
る。その時の条件は９例えば、１５０℃、２０分の仮焼
材、３５０℃、２０分の仮焼成、５００℃。Since the stainless steel substrate 1 is made of a standard material such as an SUS plate, there is no need to perform mechanical polishing or chemical polishing on the surface thereof. The surface of the stainless steel substrate 1 is sufficiently degreased, and a low melting point glass such as lead glass is applied to the surface by screen printing, precipitation, a spray gun, or the like. Conditions at that time are 9, for example, calcining material at 150°C for 20 minutes, calcining at 350°C for 20 minutes, and 500°C.
２５分の本焼成とするにより、ステンレス基板１の表面
は完全にガラス化される。このときのガラス化処理層２
の厚さは、１０〜２０μが適当である。なぜならば、ガ
ラス化処理層２の厚さが１０μより薄いと、ステンレス
基板１の表面に深いスクラッチキズがあった場合にガラ
ス化処理層２の表面に凹凸が発生して、薄膜素子６のパ
ターン精度などに悪影響を与えるし、他方。By performing the main firing for 25 minutes, the surface of the stainless steel substrate 1 is completely vitrified. Vitrification treatment layer 2 at this time
The appropriate thickness is 10 to 20μ. This is because if the thickness of the vitrified layer 2 is thinner than 10μ, if there is a deep scratch on the surface of the stainless steel substrate 1, unevenness will occur on the surface of the vitrified layer 2, and the pattern of the thin film element 6 will be On the other hand, it has a negative impact on accuracy etc.
ガラス化処理層２の厚さが２０μより厚すぎると、内部
応力、外部応力などにより、ガラス化処理層２がはがれ
る場合があるがらである。If the thickness of the vitrified layer 2 is more than 20 μm, the vitrified layer 2 may peel off due to internal stress, external stress, etc.
以上の構造の本発明は、ステンレス基板１自体に外的な
力が加わる場合に特に有効である。The present invention having the above structure is particularly effective when an external force is applied to the stainless steel substrate 1 itself.
例えば、ステンレス基板１として、直径５０８φ。For example, the stainless steel substrate 1 has a diameter of 508φ.
厚さ０，５朋ｔの５ＵＳ−３０４素材を使用し、その５
ＵＳ−３０４素材１の表面に前述の方法で厚さ２０μの
ガラス化処理層２を形成し、更に、ガラス化処理層２上
に薄膜抵抗素子６を形成させたものを、ダイヤフラムと
して抵抗歪型圧力センナに応用した場合の効果について
述べる。Using 5US-304 material with a thickness of 0.5 mm, the 5
A vitrified layer 2 with a thickness of 20μ is formed on the surface of the US-304 material 1 by the method described above, and a thin film resistive element 6 is further formed on the vitrified layer 2 to form a resistance strain type diaphragm. The effect when applied to a pressure sensor will be described.
その結果１表面はガラス面と同様のスムーズな面が得ら
れ、ピンホール等の発生による基板１との短絡も皆無で
あった。また、’ ８ＵＳ−３０４素材１とガラス化処
理層２との間の熱膨張係数の差によるクラックの発生は
、６００℃以下の条件下では皆無であった。更に、外部
圧力により。As a result, a smooth surface similar to that of a glass surface was obtained on the surface 1, and there was no short circuit with the substrate 1 due to occurrence of pinholes or the like. Moreover, no cracks were generated due to the difference in thermal expansion coefficient between the '8US-304 material 1 and the vitrified layer 2 under conditions of 600° C. or lower. Furthermore, due to external pressure.
有効径３０ｗφ、厚さ０．５ ｍ ｔのダイヤフラム円
板中央部をたわませた時１円板周辺の固定方法にもよる
が、中心部のたわみ獣は０，３ｍｔ程になった。このよ
うな外部応力を繰り返し加えても。When the center of a diaphragm disk with an effective diameter of 30wφ and a thickness of 0.5mt was deflected, the deflection of the center was about 0.3m, depending on the method of fixing the area around the disk. Even if such external stress is applied repeatedly.
ガラス化処理層２が割れたり、抵抗膜３に電気的ヒステ
リシスが発生したりすることは皆無であった。There was no cracking of the vitrified layer 2 or occurrence of electrical hysteresis in the resistive film 3.
また、圧力センサの場合は、（たわみ１）ｃＣ（材料厚
さ）Ｓの関係になるため、均一な材料厚さが要求される
。従来の基板材料に使用されているガラス、セラミック
スなどの材料の厚み公差は９通常１０％以上になるため
、従来の薄膜装置を圧力センサ゛に適用する場合には、
高精度の研摩加工等の追加工なしでは使用困難である。Further, in the case of a pressure sensor, the relationship is (deflection 1) cC (material thickness) S, so a uniform material thickness is required. Since the thickness tolerance of materials such as glass and ceramics used for conventional substrate materials is usually 10% or more, when applying a conventional thin film device to a pressure sensor,
It is difficult to use without additional work such as high-precision polishing.
これに対し９本発明では、基板１は、圧延のために、そ
の厚さの均一性が非常にすぐれており、その結果、たわ
み計のバラツキを所要の値に抑えることができた。On the other hand, in the present invention, the substrate 1 has excellent uniformity in thickness due to rolling, and as a result, it was possible to suppress the variation in the deflection meter to the required value.
本発明を構成するガラス化処理層に使用されるガラスの
種類は、基板との膨張係数などを考慮しながら１種々の
材料を選択することができる。また１本発明（二側用さ
れる基板は、ステンレス基板に限定せず、導電性の良好
な基板であればよい。更に１本発明の薄膜装置の応用例
としては圧力センサに限らず１本発明の特長を生かした
種々の応用が考えられることはいうまでもない。As for the type of glass used for the vitrification treatment layer constituting the present invention, one of various materials can be selected while taking into account the coefficient of expansion with the substrate. In addition, the present invention (the substrate used on the second side is not limited to a stainless steel substrate, it may be any substrate with good conductivity).Furthermore, as an application example of the thin film device of the present invention, it is possible to It goes without saying that various applications can be considered that take advantage of the features of the invention.
以」二の説明で明らかなように９本発明によれば、導電
性の良好な基板と導電性薄膜との間の絶縁層をガラス化
処理した層にすることにより。As is clear from the following explanation, according to the present invention, the insulating layer between the highly conductive substrate and the conductive thin film is made of a vitrified layer.
安価でピンホールが少ない構造の薄膜装置を得ることが
できる。又１本発明によって得られた薄膜装置では、基
板上に形成された薄膜素子が機械的衝撃に十分耐えるこ
とができ、また熱伝導性がよいために放熱板として使用
することができるとともに、圧力センサのダイヤフラム
基板に応用した場合にはたわみ量のバラツキを所望の小
さな値に抑えることができるという効果がある。It is possible to obtain a thin film device that is inexpensive and has a structure with few pinholes. In addition, in the thin film device obtained by the present invention, the thin film element formed on the substrate can sufficiently withstand mechanical shock and has good thermal conductivity, so it can be used as a heat sink, and can also be used as a heat sink. When applied to a diaphragm substrate of a sensor, it has the effect of suppressing variations in the amount of deflection to a desired small value.
図面は本発明による薄膜装置の一実施例の構造を示す断
面図である。
１・・・ステンレス基板、２・・・ガラス化処理層。
３５１−The drawing is a sectional view showing the structure of an embodiment of a thin film device according to the present invention. 1... Stainless steel substrate, 2... Vitrification treatment layer. 351-
Claims (1)
層と、該絶縁層上に形成された導電性薄膜素子とを備え
た薄膜装置において、前記絶縁層が、ガラス化処理した
層であることを特徴とする薄膜装置。1. A thin film device comprising a substrate with good conductivity, an insulating layer formed on the substrate, and a conductive thin film element formed on the insulating layer, in which the insulating layer is vitrified. A thin film device characterized in that it is a layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1380983A JPS59141273A (en) | 1983-02-01 | 1983-02-01 | Thin-film device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1380983A JPS59141273A (en) | 1983-02-01 | 1983-02-01 | Thin-film device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59141273A true JPS59141273A (en) | 1984-08-13 |
Family
ID=11843597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1380983A Pending JPS59141273A (en) | 1983-02-01 | 1983-02-01 | Thin-film device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59141273A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61217733A (en) * | 1985-03-25 | 1986-09-27 | Nippon Soken Inc | Pressure detector |
| JPS61256233A (en) * | 1985-05-09 | 1986-11-13 | Tokai Rika Co Ltd | Metal membrane pressure sensor and its preparation |
| EP0674865A1 (en) * | 1994-03-28 | 1995-10-04 | ISOCLIMA S.p.A. | Improved insulating glazing unit with heating elements |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5030488A (en) * | 1973-04-02 | 1975-03-26 | ||
| JPS50130375A (en) * | 1974-04-01 | 1975-10-15 |
-
1983
- 1983-02-01 JP JP1380983A patent/JPS59141273A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5030488A (en) * | 1973-04-02 | 1975-03-26 | ||
| JPS50130375A (en) * | 1974-04-01 | 1975-10-15 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61217733A (en) * | 1985-03-25 | 1986-09-27 | Nippon Soken Inc | Pressure detector |
| JPS61256233A (en) * | 1985-05-09 | 1986-11-13 | Tokai Rika Co Ltd | Metal membrane pressure sensor and its preparation |
| EP0674865A1 (en) * | 1994-03-28 | 1995-10-04 | ISOCLIMA S.p.A. | Improved insulating glazing unit with heating elements |
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