JPS59136818A - Temperature switch - Google Patents
Temperature switchInfo
- Publication number
- JPS59136818A JPS59136818A JP1099583A JP1099583A JPS59136818A JP S59136818 A JPS59136818 A JP S59136818A JP 1099583 A JP1099583 A JP 1099583A JP 1099583 A JP1099583 A JP 1099583A JP S59136818 A JPS59136818 A JP S59136818A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- switch
- ferroelectric
- ferroelectric element
- suddenly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/2033—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature details of the sensing element
- G05D23/2036—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature details of the sensing element the sensing element being a dielectric of a capacitor
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、各種の温度制御に幅広く使用し得る半導体無
接点式の温度スイッチに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor non-contact type temperature switch that can be widely used for various types of temperature control.
従来技術
従来の温度スイッチとしては、第１図に示すようなバイ
メタル式のものが最も良く知られて１７＼る。このバイ
メタル式温度スイッチは、動作用／くイメタルｌに抵抗
発熱体２を取付け、該抵抗発熱体２の発熱でバイメタル
ｌが湾曲することを利用して、動作用バイメタル１及び
温度補償用／＜イメタル３の端部に取付けた接点４及び
５を開離させる構造となっている。BACKGROUND OF THE INVENTION The most well-known conventional temperature switch is a bimetallic one as shown in FIG. This bimetal type temperature switch has a resistance heating element 2 attached to the operating bimetal 1, and utilizes the fact that the bimetal 1 curves due to the heat generated by the resistance heating element 2. It has a structure in which contacts 4 and 5 attached to the ends of the metal 3 are opened.
従来技術の欠点
しかしながら、このバイメタル式温度スイ・ンチは、機
械的な可動部分の多い複雑な構造の有接点方式となるた
め、バイメタル部分の動作不良、接点の酸化による電気
的コンタクト不良等の故障を生じ易く、信頼性に欠ける
こと、温度設定が面倒で正確な温度設定−が困難である
こと、熱容量が大きく熱応答性が悪いこと等の静点があ
る。別の従来例として、感温フェライトリードスイ・ン
チ等を利用したものも知られているが、この場合にも機
械的な接点構造となるため、バイメタル式温度スイッチ
の欠点を全面的に解決するものとはなり得なかった。Disadvantages of the conventional technology However, this bimetal temperature switch is a contact type with a complicated structure with many mechanically moving parts, so it is prone to malfunctions such as malfunction of the bimetal parts and poor electrical contact due to oxidation of the contacts. There are some disadvantages, such as the fact that the temperature setting is troublesome and accurate temperature setting is difficult, and the heat capacity is large and the thermal response is poor. Another conventional example is one that uses a temperature-sensitive ferrite reed switch, but this also uses a mechanical contact structure, which completely solves the drawbacks of bimetallic temperature switches. It couldn't become a thing.
、本発明の目的
そこで本発明は上述する従来からの欠点を一掃し、構成
が簡単で小型で、熱エネルギーロスが小さく、温度変化
に対する応答性が良好であり、しかも温度設足を自由に
かつ正確に行なうことができるイｈ頼性の高い半導体無
接点方式の温度スイフチを提供することを目°的とする
。OBJECT OF THE INVENTION Therefore, the present invention eliminates the above-mentioned conventional drawbacks, has a simple configuration, is small in size, has low thermal energy loss, has good responsiveness to temperature changes, and can freely set the temperature. It is an object of the present invention to provide a highly reliable semiconductor non-contact type temperature switch that can perform accurate temperature switching.
本発明の構成
上記目的を達成するため、本発明に係る温度スイッ乏は
、特定温度で容量の急変する強誘電体素子を温度検出端
としたことを特徴とする特定温度で容量の急変する強誘
電体素子を構成するだめの素体としては、例えばＢａＴ
ｉＯ３系多結晶体で成る強誘電体磁器が存在する。この
強誘電体磁器に対の電極を付与することにより、本発明
における強誘電体素子が得られる。第２図はその具体的
な構造を示す図であって、前述の多結晶体強誘電体磁器
を用いて円板状等の適当な形状に形成した素体６の厚さ
方向の両面に電極７及び８をそれぞれ形成した構造とな
っている。このようにして得られた強誘電体素子は、印
加電圧と蓄積電荷との関係が角形特性を示す一種の非直
線性コンデンサとしても動作するが、その温度が素体６
の組成によって定まるキュリ一温度Ｔｃに達すると、容
量値が第３図に示すように急激に変化する。一般的なも
のでは、常温２０℃で３０００ＰＦの容量であったもの
が、７０℃に上昇すると０．０６ｇ’Ｆ程度と、２０倍
以上も急上昇するのである。従って、この容量変化をゲ
ート回路の回路定数の変化に変換して半導体スイッチ等
を動作させることにより、無接点方式であって信頼性が
高く、かつ回路構成が簡単で小型の半導体温度スイッチ
を実現することができる。Structure of the Present Invention In order to achieve the above object, the temperature switch according to the present invention is characterized in that a ferroelectric element whose capacitance suddenly changes at a specific temperature is used as a temperature detection terminal. For example, BaT can be used as a base material for forming the dielectric element.
Ferroelectric ceramics made of iO3 polycrystals exist. By providing a pair of electrodes to this ferroelectric ceramic, the ferroelectric element of the present invention can be obtained. FIG. 2 is a diagram showing the specific structure of the element body 6, which is formed into an appropriate shape such as a disk shape using the polycrystalline ferroelectric ceramic described above, and has electrodes on both sides in the thickness direction. 7 and 8, respectively. The ferroelectric element obtained in this way also operates as a type of nonlinear capacitor in which the relationship between applied voltage and accumulated charge exhibits a rectangular characteristic.
When the Curie temperature Tc determined by the composition of is reached, the capacitance value changes rapidly as shown in FIG. A typical product has a capacity of 3000 PF at room temperature of 20°C, but when the temperature rises to 70°C, the capacity increases rapidly by more than 20 times to about 0.06 g'F. Therefore, by converting this capacitance change into a change in the circuit constant of the gate circuit to operate a semiconductor switch, etc., we have realized a compact semiconductor temperature switch that is non-contact type, highly reliable, and has a simple circuit configuration. can do.
しかも、強誘電体素子のキュリ一温度Ｔ−ｃは、当該強
誘電体素子を構成するＢａＴｉＯ３系多結晶体のＴｉの
一部をＳｎ、 ＺｒもしくはＣａによって置換し、また
はＨａの一部をＳｒもしくはｐｂ等によって置換するこ
とにより、約１２０°Ｃを基準にして、高温側にも低温
骨にも正確かつ自由に移動させることができる。従って
設定温度を正確かつ自由に選び得る温度スイッチを実現
することができる。Moreover, the Curie temperature T-c of the ferroelectric element can be adjusted by replacing part of the Ti in the BaTiO3 polycrystalline material constituting the ferroelectric element with Sn, Zr, or Ca, or by replacing part of the Ha with Sr. Alternatively, by replacing it with pb or the like, it is possible to accurately and freely move it to both the high temperature side and the low temperature bone based on about 120°C. Therefore, it is possible to realize a temperature switch that can accurately and freely select the set temperature.
また、強誘電体素子はＢａＴｉＯ３系多結晶体で成る強
誘電体磁器によって構成され、小型で熱容量が小さいか
ら、熱応答性が良好な温度スイッチが得られる。Further, the ferroelectric element is made of ferroelectric ceramic made of BaTiO3 polycrystalline material, and is small and has a small heat capacity, so that a temperature switch with good thermal response can be obtained.
実施例
第４図は本発明に係る温度スイッチの具体的な実施例に
おける電気回路図を示す図である。この実施例では、強
誘電体素子Ｃｎをサイリスタ等の三端子半導体スイッチ
Ｓのゲート回路に挿入し、ゲート回路の回路定数を強誘
電体素子Ｃｎの容量変化によって変化させることにより
、前記三端子半導体スイッチＳのオン、オフ特性を制御
する構成となっている。強誘電体Ｃｎは、三端子半導体
スイッチＳから離して、或いは三端子半導体スイッチＳ
と共に、温度を検出すべき位置に設置する。Ｒ−１及び
Ｒ２は強誘電体素子Ｃｎと共にゲート回路を構成する抵
抗である。Embodiment FIG. 4 is a diagram showing an electric circuit diagram of a specific embodiment of the temperature switch according to the present invention. In this embodiment, a ferroelectric element Cn is inserted into a gate circuit of a three-terminal semiconductor switch S such as a thyristor, and the circuit constant of the gate circuit is changed by a change in the capacitance of the ferroelectric element Cn. It is configured to control the on/off characteristics of the switch S. The ferroelectric substance Cn is separated from the three-terminal semiconductor switch S, or
At the same time, it is installed at the position where the temperature should be detected. R-1 and R2 are resistors that constitute a gate circuit together with the ferroelectric element Cn.
上記の温度スイッチにおいて、三端子半導体スイッチＳ
のアノードとカソードとに５０Ｈｚの交流電圧が印加さ
れているものとし、強誘電体Ｃｎの置かれている雰囲気
が室温２０°Ｃから７０°Ｃに上昇し１強誘電体素子Ｃ
ｎの容量が３０００ｐＦから０．０８ｇ Ｆに増大した
とする。強誘電体素子ＣｎのインピーダンスＺ＝１／ω
Ｃは、２０℃でＺ＝１゜０ＥＩＭΩ、７０℃でＺ ＝
５３．ＩＫΩとなる。即ち、室温２０℃で３００００
ｐ Ｆであった容量が、７０℃でｏ、ｏｅ終Ｆに増大す
る。と、インピーダンスＺは１．０６ＭΩから５３．Ｉ
ＫΩに急減するのである。このため、アノード、ゲート
間のインピーダンスが急激に低下して回路定数が変化し
、三端子半導体スイッチＳのブレークオーバ電圧が非常
に小さくなる。In the above temperature switch, the three-terminal semiconductor switch S
It is assumed that an AC voltage of 50 Hz is applied to the anode and cathode of 1 ferroelectric element C, and the atmosphere in which the ferroelectric element Cn is placed rises from the room temperature of 20°C to 70°C.
Suppose that the capacitance of n increases from 3000 pF to 0.08 g F. Impedance Z of ferroelectric element Cn = 1/ω
C is Z=1゜0EIMΩ at 20℃, Z=1゜0EIMΩ at 70℃
53. It becomes IKΩ. That is, 30,000 at room temperature 20℃
The capacity, which was p F, increases to o, oe final F at 70°C. And the impedance Z is from 1.06MΩ to 53. I
It suddenly decreases to KΩ. Therefore, the impedance between the anode and the gate decreases rapidly, the circuit constant changes, and the breakover voltage of the three-terminal semiconductor switch S becomes extremely small.
第５図は本発明に係る温度スイッチの更に別の実施例に
おける電気回路接続図である。この実施例では、強誘電
体素子Ｃｎを三端子半導体スイッチＳのカソード、ゲー
ト間に接続しである。特にこの実施例の場合は、強誘電
体素子Ｃｎと三端子半導体スイッチＳとを熱的に結合し
、三端子半導体スイッチＳが熱的破壊を起す温度より少
し低い温度で、三端子半導体スイッチＳをオフさせるこ
とにより、三端子半導体スイッチＳの熱的破壊を防止で
きる利点がある。なお、ゲート回路の構成１強誘電体素
子の使用個数等に関しては、種々変形が可能である。FIG. 5 is an electrical circuit connection diagram in yet another embodiment of the temperature switch according to the present invention. In this embodiment, a ferroelectric element Cn is connected between the cathode and gate of a three-terminal semiconductor switch S. In particular, in the case of this embodiment, the ferroelectric element Cn and the three-terminal semiconductor switch S are thermally coupled, and the three-terminal semiconductor switch S is heated at a temperature slightly lower than the temperature at which the three-terminal semiconductor switch S causes thermal breakdown. By turning off the three-terminal semiconductor switch S, there is an advantage that thermal destruction of the three-terminal semiconductor switch S can be prevented. Note that various modifications can be made to the number of ferroelectric elements used in the gate circuit configuration 1.
本発明の効果
以上述べたように、本発明に係る温度スイッチは、特定
温度で容量の急変する強誘電体素子を温度検出端とした
ことを特徴とするから、構成が簡単で小型で、熱エネル
ギーロスが小さく、温度変化に対する応答性が良好であ
り、しかも温度設定を自由にかつ正確に行なうことがで
きる信頼性の高い半導体無接点方式の温度スイッチを提
供することができる。Effects of the present invention As described above, the temperature switch according to the present invention is characterized by using a ferroelectric element whose capacitance suddenly changes at a specific temperature as the temperature detection terminal, so that it is simple and compact in structure, and It is possible to provide a highly reliable semiconductor non-contact type temperature switch that has low energy loss, good responsiveness to temperature changes, and can freely and accurately set the temperature.
第１図は従来のバイメタル式温度スイッチの正面図、第
２図は強誘電体素子の具体的な構造を示す図、第３図は
同じく温度−容量特性図、第４図は本発明に係る温度ス
イッチの電気回路接続図、第５図は同じく更に別の実施
例における電気回路接続図である。
Ｃｎ・・・強誘電体素子
Ｓ・・ｍ＝端子半導体スイッチFig. 1 is a front view of a conventional bimetallic temperature switch, Fig. 2 is a diagram showing the specific structure of a ferroelectric element, Fig. 3 is a temperature-capacitance characteristic diagram, and Fig. 4 is a diagram according to the present invention. The electric circuit connection diagram of the temperature switch, FIG. 5, is also an electric circuit connection diagram in yet another embodiment. Cn...ferroelectric element S...m=terminal semiconductor switch
Claims (3)
検出端としたことを特徴とする温度スイッチ。(1) A temperature switch characterized in that the temperature detection terminal is a ferroelectric element whose capacitance changes suddenly at a specific temperature.
イッチのゲート回路の回路定数を前記強誘電体素子の容
量変化によって変化させることにより、前記三端子半導
体スイッチのスイ・ンチ特性を制御することを特徴とす
る特許請求の範囲第１項に記載の温度スイッチ。(2) A three-terminal semiconductor switch is provided, and the switch characteristics of the three-terminal semiconductor switch are controlled by changing the circuit constant of the gate circuit of the three-terminal semiconductor switch by changing the capacitance of the ferroelectric element. A temperature switch according to claim 1, characterized in that:
で成る強誘電体磁器で構成されたことを特徴とする特許
請求の範囲第１項または第２項に記載の温度スイッチ。(3) The temperature switch according to claim 1 or 2, wherein the ferroelectric element is made of ferroelectric ceramic made of BaTiO3 polycrystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1099583A JPS59136818A (en) | 1983-01-26 | 1983-01-26 | Temperature switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1099583A JPS59136818A (en) | 1983-01-26 | 1983-01-26 | Temperature switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59136818A true JPS59136818A (en) | 1984-08-06 |
Family
ID=11765718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1099583A Pending JPS59136818A (en) | 1983-01-26 | 1983-01-26 | Temperature switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59136818A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006082930A1 (en) * | 2005-02-07 | 2006-08-10 | Hochiki Corporation | Heat detector and method for manufacturing heat detecting element |
| JP2006215000A (en) * | 2005-02-07 | 2006-08-17 | Hochiki Corp | Method for manufacturing thermal sensing element |
| JP2006244162A (en) * | 2005-03-03 | 2006-09-14 | Hochiki Corp | Heat detector |
-
1983
- 1983-01-26 JP JP1099583A patent/JPS59136818A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006082930A1 (en) * | 2005-02-07 | 2006-08-10 | Hochiki Corporation | Heat detector and method for manufacturing heat detecting element |
| JP2006215000A (en) * | 2005-02-07 | 2006-08-17 | Hochiki Corp | Method for manufacturing thermal sensing element |
| GB2438985A (en) * | 2005-02-07 | 2007-12-12 | Hochiki Co | Heat detector and method for manufacturing heat detecting element |
| GB2438985B (en) * | 2005-02-07 | 2009-04-08 | Hochiki Co | Heat detector and method for manufacturing heat detecting element |
| US7896544B2 (en) | 2005-02-07 | 2011-03-01 | Hochiki Corporation | Heat detector and method of manufacturing heat detecting element |
| TWI426631B (en) * | 2005-02-07 | 2014-02-11 | Hochiki Co | Thermal detector and method of manufacturing thermal sensing element |
| JP2006244162A (en) * | 2005-03-03 | 2006-09-14 | Hochiki Corp | Heat detector |
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