JPS59126648A - Method of pellet exfoliation - Google Patents

Method of pellet exfoliation

Info

Publication number
JPS59126648A
JPS59126648A JP150783A JP150783A JPS59126648A JP S59126648 A JPS59126648 A JP S59126648A JP 150783 A JP150783 A JP 150783A JP 150783 A JP150783 A JP 150783A JP S59126648 A JPS59126648 A JP S59126648A
Authority
JP
Japan
Prior art keywords
pellets
adhesive tape
pellet
tape
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP150783A
Other languages
Japanese (ja)
Other versions
JPS6244409B2 (en
Inventor
Koichi Tanigawa
谷川　耕一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP150783A priority Critical patent/JPS59126648A/en
Publication of JPS59126648A publication Critical patent/JPS59126648A/en
Publication of JPS6244409B2 publication Critical patent/JPS6244409B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To facilitate the selecting exfoliation of pellets by a method wherein a semiconductor wafer is stretched on the first adhesive tape and then completely through-cut, thereafter the second adhesive tape whose adhesion force decreases by ultraviolet rays is stuck on the wafer, thus forming an ultraviolet ray non transmitting film at the position corresponding to an extracted pellet. CONSTITUTION:After the first adhesive tape 10 whose adhesion force decreases by the irradiation with ultraviolet rays is stretched on the back surface of the wafer, the wafer is divided into pellets B by complete through cut, which pellets B are inspected in appearance. Next, the second adhesive tape 11 whose adhesion force decreases by the irradiation with ultraviolet rays is stretched on the front surface of the pellets B, irradiation with ultraviolet rays is performed after the ultraviolet ray non transmitting film 12 is formed at the position corresponding to the pellet to be extracted. Then, only the pellets B' corresponding to the non transmitting films 12 can be extracted in a mass. This method facilitates the automation of the pellet appearance inspection because of no extension of the first adhesive tape. Besides, a thrust-up mechanism conventionally needed is unnecessitated.

Description

【発明の詳細な説明】 イ　産業上の利用分野 本発明は、粘着テープ上に張付けられた半導体クエーハ
を粘着テープ上で個々の半導体ペレットに分割後、これ
ｔ−選別抽出して活着テープから剥離する方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention involves dividing a semiconductor wafer pasted onto an adhesive tape into individual semiconductor pellets on the adhesive tape, extracting the semiconductor pellets by T-selection, and peeling them off from the adhesive tape. It's about how to do it.

口　従来技術 −ｅＶｃ１　）ランジスクやＩＣ等の半導体装置の半導
体ペレット（以下率にペレットと称す）は次のようにし
て製造される。ｌｉｐら一枚の牛導俸りエーハ悴】（以
下率にクエーハと祢す）に多数の半４体ペレット向を一
括して形成する（第１図参照）。パに所足個戒のペレツ
）　（Ｂ）を一括形成したクエーハ（５）を伸縮性のあ
る粘看テープ＋ｔｌ上に及省する（ＳＩ１５．２図参照
）。この状態でクエーハ（ＡＪ　ｔ−スクライブ工程に
送り、例えば円板状のダイｆ　１２１　？を使用するダ
イシング決によってクエーハ（ト）衣囲の谷ペレット（
ロ）同に格子状の溝（３）を形成する（第３図参照）。Prior Art - eVc1) Semiconductor pellets (hereinafter referred to as pellets) for semiconductor devices such as Landisks and ICs are manufactured as follows. A large number of half-four-body pellets are formed at once on a single piece of ox-lead pellet (hereinafter referred to as "Queha") (see Figure 1). Apply the Quaha (5), which has been formed in bulk (B), onto the elastic adhesive tape + tl (see Figure SI15.2). In this state, the Quafer (AJ) is sent to the t-scribe process, and is diced using, for example, a disk-shaped die f 121 ?
b) Similarly, lattice-shaped grooves (3) are formed (see Figure 3).

入にこの−（３）を形成したクエーハ四をグレーキング
エ佳に送υ％溝１３）の所からクエーハ（勾を頑次分剖
し、１向々のペレツ）　（Ｂ）に細分割して多欲のベレ
ン）　（ｆ３］を一度に得る（第１図参照）。この後多
酸のべしツ）　（Ｂ）を張有している貼着テープ＋１１
を放射状に引き伸ばすことにより、谷ペレット（Ｂ）を
互いに所定の間隔が開くように引き離し、この状−で粘
、ｔテープ（１）を一定する（＊、ｊ凶参照）。後は粘
着テープ（１）上に＊、１ｔされている各ペレット（均
の外観チェックを行ない、良品ベレン）　（Ｂ）のみを
Ａ空吸庸ペン＋４１を用いて粘着テープ（１）から引き
剥し、良品ペレン）　（Ｂ）を次工程に搬送する（＃！
Ｉｇ図参１ゑ）。向反品ペレット（Ｂ）　ｋ具全吸着ペ
ン（４）を使用し゛Ｃ績庸テープｌｌ）力・ら引き剥す
時には、粘着テープ＋１１の引き剥し全行なうペレット
（１３）の下方に位置する部分と１突上＃（６）によっ
て上方に芙上げ、吸４を行なうペレットを他のペレット
より突出させて真空吸着が容易に行なえるよう（／こし
である。At the beginning, the four quadrants that formed this - (3) were sent to the gray king plane from the υ% groove 13) and subdivided into quadrats (by carefully dissecting the slope, one pellet per direction) (B). Obtain (F3) (see Figure 1) at once (see Figure 1). After this, use the adhesive tape holding Polyacid (B) +11
By stretching radially, the valley pellets (B) are separated from each other at a predetermined distance, and in this state, the viscosity of the tape (1) is kept constant (see *, j). After that, each pellet (*, 1t) placed on the adhesive tape (1) (check the uniform appearance, and it is a good product) (B) is peeled off from the adhesive tape (1) using A air suction pen + 41. , good product Peren) (B) is transported to the next process (#!
Ig fig. 1e). When peeling off the repellent pellet (B) using the full adsorption pen (4) and applying force to the adhesive tape (11), remove the adhesive tape +11 from the part located below the pellet (13) that is to be completely peeled off. The pellets to be sucked 4 are raised upward by the first thrust #(6) so that the pellets to be suctioned protrude from the other pellets so that vacuum suction can be easily performed.

しかし、クエーノ・（Ａ）のペレット（ｊ３）への分割
及び分割したベレン）　ＣＢ）の良品と不良品との分離
ｔ１：＊を、上記した如く伸線性を何する粘着テープ（
１）を使用して行なうと、クエーノ１（Ａ）のペレット
ＣＢ）への分子ｉｌｌ後、谷ペレツ）　（Ｂ）の粘着テ
ープｉｌｌからの引き剥し作菜を容易にするため、粘着
テープ（１）を引き伸ばして谷ペレット（均量の間隔を
開ける時、各ペレットに）の位置量体にズレが生じると
ｈりた欠点があった。このため、粘着テープＩｌｌ上に
張着されたペレツ）　ＣＢ）の外観検査を自助化しよう
とした場合、上記ペレツ）　ＣＢ）の位置ズレがベレッ
ト外観検量自励化の妨げになると＾つた入点があった。However, dividing Quaeno (A) into pellets (j3) and separating t1:* between good and defective products (CB) into pellets (j3) and separating t1: * from the defective products by using an adhesive tape (
1), after the molecular illumination of Quaeno 1 (A) to the pellet CB), the adhesive tape (1 ) was stretched and the positioning body of the valley pellets (when spaced evenly apart between each pellet) was misaligned, which caused a disadvantage. For this reason, when trying to self-help the visual inspection of pellets (CB) stuck on adhesive tape Ill, it is difficult to determine if the positional deviation of the pellets (CB) will interfere with self-excitation of pellet visual inspection. was there.

又粘着テープｕｌ　Ｉｃ　＊庸したペレット＠〕の積置
チー７’　ｉｌｌからの引き刺しを容易にするためには
、粘着テープ＋ｌｌの下方に、具至吸着ｒ行なうペレツ
）　ＣＢ）だけを上方に突き上げるための芙き上げ機構
を設ける必要があり、構盾が複雑になるとｈつた人魚も
あつ７ヒ。In addition, in order to make it easier to pull the adhesive tape ul Ic *normal pellets @] from the storage Q 7'ill, it is necessary to attach only the pellets (CB) to the lower part of the adhesive tape +ll. It was necessary to provide a lifting mechanism to push up, and when the shield became complicated, some mermaids were troubled.

ハ　発明の目的 多酸のベレソトヲ一括形成したクエーハの下回に紫外線
照射により粘着力の低下する粘着テープを張着し、この
状態でクエーハを個々のベレットＶＣ細分割した後、良
品又は不良品の抽出ベレットの改善された選別ｊｉｉｌ
Ｊ離方法の提供を目的とするもので６９、それにより従
来のような粘着テープの引き伸ばし及びペレットの真空
吸着により個別分離することなく、ペレットの選別が行
なえるようにするものである。C. Purpose of the invention An adhesive tape whose adhesive strength decreases when irradiated with ultraviolet rays is attached to the bottom of the quadrature made of polyacid beads, and in this state, after the quaver is divided into individual pellet VC finely divided parts, good or defective products can be separated. Improved sorting of extraction pellets
The purpose of this invention is to provide a J-separation method69, which allows pellets to be sorted without having to separate them individually by stretching an adhesive tape and vacuum adsorbing the pellets as in the past.

二　発明の構成 多収のペレットを一括形成したクエーハの裏向に紫外線
照射により粘着力の低下する第７の粘着テープを＊看し
た状悪で、クエーハの完全スルーカットを行ない、クエ
ーハｅ％ペレットに細分割し、この第１の粘着テープに
紫外線を照射して粘有力を低下させた後、第／の粘着テ
ープ上にカントされた時の状態のまま宏付けられている
多収のペレットの表面に累外線照射により粘着力の代丁
する＠、２の粘着テープを張着し、次にこの第２の粘着
テープ表面の抽出を行ｆｘ　イｆｃいペレットの上方に
位置する部分に紫外線非透購膜を塗布形成し、この状悪
で：！、２の枯看テープに基外、ｄ　ｋ照射した後、第
一の粘着テープを剥すことにより抽出したいベレットを
第２の枯看テープに張４ｔ　した状憑で抽出するように
したものである。2. Composition of the Invention The seventh adhesive tape, whose adhesive strength decreases due to ultraviolet irradiation, was placed on the reverse side of the Quaha on which high-yield pellets were formed in one go. After irradiating the first adhesive tape with ultraviolet rays to reduce its viscosity, the high-yield pellets are spread on the first adhesive tape in the state in which they were canted. Adhesive tape 2 is pasted on the surface to increase its adhesive strength by external radiation irradiation, and then the surface of this second adhesive tape is extracted. A transparent membrane was applied and formed, and in this bad condition:! After irradiating the second adhesive tape with dk, the first adhesive tape is peeled off to extract the pellet to be extracted from the second adhesive tape. .

ホ　　夾苑例 ！ｌ！１２図乃至第１／図は本発明に俤るペレット剥離
方法によってクエーハを細分割することによシ得られた
ｆＪＬ故のペレットの中から任意のペレットｔ−璃出す
る時のｆ１ニーａ工梶を示す図面である。本発明に係る
ベレット剥離方法ｖｃよってペレットの抽出を行なうに
は、先ず多収のペレット（Ｂ）を一括形成したクエーハ
（５）の炎面に第１の粘着テープｔｉｏ］を張着する（
第７図娑照）０向嘱この粘着テープとは來外線を照射す
ると粘着力が低下する粘着テープのことであシ、その粘
着力は例えば票外線照射曲の粘着力がｊθθ〜”　０Ｑ
”／ｃａｔ”のものが、紫外線照射後は２０〜３０ｇ／
Ｑｌｎ２に低ｆする。次に！Ｆｓ／の活着テープ頭上ｔ
ｔｃ張ｚしたクエーハ（ム）に完全スルーカットを行な
い、クエーハ囚に一括杉成し−之ペレット（ロ）を第７
の粘着テープ頭上で個々のペレット（Ｂ）に相分割する
Ｃ！、／図参照）。次に細分割したベレツ）　（Ｂ）の
外＠偵査倉、粘着テープの引き伸ばし等を行なうことな
く細分割した時の状患のま“ま行ない、第／の粘着テー
プ（ｌＯ）上に張着している所定個戒のペレン）　（Ｂ
）　ｋ　ｄ品と不良品とに逍別する。次向わりの終ｒし
たベレット（同を張澗°している！；ｇ／の４６４テー
プ（１０１Ｋ系外線を照射し、第１の粘着テープ−１０
１の粘着力を低下させる０久に：　４’＋！ｉ　、ｄ力
の低下した第１の枯稽テープ（ｌＯ）上にその裏ｌが貴
省されたベレン）　ＣＢ）の表面に、第２の粘材テープ
Ｖ１すを張着する（第り回診ｍ）。この状態で第２の柘
４７″−プ（１０表向の、上記外ｍ侠査で良品と判定さ
れたベレット、或いは不良品と利足され之ペレットの上
方に位置する部分に紫外線非透過膜す匈と塗布形成する
（第７０図参照）。仄シて所定の位置にポ外シー非透過
膜ｕ４（Ｉ−塗４ｐ形成し、Ａコの枯省テープ（１りに
系外線を照射し、第２の枯７山テープ（１すの紫外−非
透過膜喀を塗４　］ｅ　＋戊していない部分の粘着力を
低下させる。そしてこの硬、第２の枯４・テープ（１１
）を剥がＣば！；８２の枯Ｉテープ（Ｉりの夕？外線非
透遍膜σ乃を澁イ１杉威した部分は粘着力が低下してい
ないため、当該部分に張着したペレット（句はｓ６／の
粘着テープ（ｉ（至）から剥離し、第２の粘材テープ（
量りに残ることになシ、第／の粘着テープｔｌＯ）上に
吸着したベレット（ロ）の内、任意のペレット（句のみ
を第２の活着テープＣ）に張着した状態で抽出できる。Ho Kyoen example! l! Figures 12 to 1/1 show f1 knee a process when arbitrary pellets are extracted from fJL pellets obtained by finely dividing quafer by the pellet peeling method of the present invention. This is a drawing showing a kaji. To extract pellets using the pellet peeling method VC according to the present invention, first, a first adhesive tape tio is pasted on the flame surface of the Quafer (5) on which high-yield pellets (B) have been formed at once (
This adhesive tape is an adhesive tape whose adhesive strength decreases when irradiated with external rays.
"/cat" weighs 20-30g/ after UV irradiation.
Low f to Qln2. next! Fs/ adhesive tape overhead t
A complete through-cut was made to the tc-strung Quaha (Mu), and the pellets (B) were delivered to the Quaha prisoner at once.
phase split into individual pellets (B) with adhesive tape overhead.C! ,/see figure). Next, the tape was subdivided) (B) outside the reconnaissance warehouse, the adhesive tape was not stretched, etc., and the condition when subdivided was carried out as per the problem. Peren of the prescribed individual precepts) (B
)K D products and defective products are separated. The next end of the tape (the same is stretched!; g/464 tape (irradiated with 101K external radiation, the first adhesive tape - 10
0 to reduce the adhesive strength of 1: 4'+! i, d Paste the second adhesive tape V1 on the surface of the first dry tape (lO) whose back side has been removed (CB) (first round). m). In this state, a second 47"-pu (10-sided pellet) is coated with an ultraviolet-impermeable film on the upper part of the pellet that was determined to be good by the above-mentioned inspection or was judged to be defective. (See Fig. 70). Apply a non-permeable film u4 (I-coat 4p) on a predetermined position, and irradiate the drying tape (A) with external radiation. , apply a second UV-impermeable film (4) to reduce the adhesive strength of the unpierced area.
) Peel it off! ；82 dry tape Peel it off from the adhesive tape (i) and apply the second adhesive tape (
Of the pellets (B) adsorbed on the first adhesive tape tlO), any pellet (only the second adhesive tape C) can be extracted in a state that it does not remain in the weighing.

へ　発明の効果 上記した如く、多数のペレットを一括杉Ｊメし之りエー
／・を第１の粘着テープ上りこ張着した状態で谷ペレッ
トで完全スルーカットによって分割した後、第１の粘着
テープの引き伸ばしを行なうことなく、第２の粘着テー
プによって必要ナヘレットの佃出ヲ行なえばクエーハの
ベレットヘノ分割後、薔ペレット間の立直関係にズレが
生じることがないため谷ベレントの外観横歪を自前化す
る時、この自前化が６易に行なえる又第１の粘着テープ
に張有されたベレットの抽出は、ベレットの表面に張着
する第２の粘着テープによって行なうため、第７′の粘
着テープの下面にベレン）ｔ−上刃に突き上げるえめの
突き上げ漬樽に設ける必要もなくなる。Effects of the Invention As described above, after dividing a large number of pellets by complete through-cutting with the valley pellets with the first adhesive tape attached to the upper part of the cedar pellets, the first adhesive tape is applied. If you use the second adhesive tape to remove the necessary nails without stretching the tape, there will be no deviation in the vertical relationship between the rose pellets after dividing the quaha pellets, so you can easily correct the horizontal distortion in the appearance of the valley beads. In addition, since the extraction of the pellet attached to the first adhesive tape is carried out by the second adhesive tape attached to the surface of the pellet, the 7' adhesive There is no need to provide a pick-up barrel on the bottom surface of the tape to push it up to the upper blade.

【図面の簡単な説明】[Brief explanation of drawings]

第１図乃至第ｇ図は従来のベレット剥離方法を示す説り
」図、第２図乃至第７７図は本発明に係るペレット剥離
方法を示す説明図である。 （５）・・半導体クエーハ、（Ｂ）・・半導体ペレット
、叫・Ｉ第／の粘着テープ、（川・・第２の粘着テープ
、側・・系外娠非透Ｍ映０ 第２図 第３図 第４図 第６Ｗｉ１ 第７図 ｔり 第８図 ρ 第９図 第１０図FIGS. 1 to 7G are explanatory diagrams showing a conventional pellet peeling method, and FIGS. 2 to 77 are explanatory diagrams showing a pellet peeling method according to the present invention. (5) Semiconductor wafer, (B) Semiconductor pellet, Scream, I-th adhesive tape, (River... Second adhesive tape, Side... Non-transparent M-image 0 Figure 2 Figure 3 Figure 4 Figure 6 Wi1 Figure 7 Figure 8 ρ Figure 9 Figure 10

Claims (1)

【特許請求の範囲】[Claims] （１）　多欲のペレットを一括形成したクエーノ・ｔ−
ｇ外Ｓ照射により粘着力の低下する第１の粘４ｒ７−−
プに張着してペレット分剖ナベ＜完全スルーカットする
工程と、この第１の粘着テープに系外線全照射してその
粘着刃金低下させ、スルーカット状態の多欲のペレット
面にポ外縁魚射によＩ）粘有力の低下する第２のｙｒａ
＊テープを負誉する工程と、抽出すべきペレットの対応
位−に系外１頑＃透過膜と形成ｒる工程と、前記第コの
ｅ３４ｉテープに糸外、１ｍを照射して抽出すべきペレ
ットｔこの第２の粘着テープに張４し尼状台で抽出する
工程とを含むこと１０改とするペレット剥離方法。(1) Quaeno T-, which formed the pellets of greed all at once.
g First adhesive 4r7-- whose adhesive strength decreases due to external S irradiation
The first adhesive tape is completely irradiated with external radiation to lower its adhesive edge, and the outer edge of the pellet is attached to the pellet surface in the through-cut state. I) The second yra whose viscous force decreases due to fish shooting
*The step of applying the tape, the step of forming a permeable membrane outside the system at the corresponding position of the pellet to be extracted, and the step of irradiating the e34i tape with a distance of 1 m outside the system to extract the pellet. A method for peeling off pellets according to Rev. 10, comprising the step of applying the pellets to this second adhesive tape and extracting them with a conical table.
JP150783A 1983-01-07 1983-01-07 Method of pellet exfoliation Granted JPS59126648A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP150783A JPS59126648A (en) 1983-01-07 1983-01-07 Method of pellet exfoliation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP150783A JPS59126648A (en) 1983-01-07 1983-01-07 Method of pellet exfoliation

Publications (2)

Publication Number Publication Date
JPS59126648A true JPS59126648A (en) 1984-07-21
JPS6244409B2 JPS6244409B2 (en) 1987-09-21

Family

ID=11503388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP150783A Granted JPS59126648A (en) 1983-01-07 1983-01-07 Method of pellet exfoliation

Country Status (1)

Country Link
JP (1) JPS59126648A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031918A (en) * 1983-07-29 1985-02-18 関西日本電気株式会社 Adhesive sheet for dicing semiconductor wafer
EP0226949A2 (en) * 1985-12-12 1987-07-01 Lintec Kabushiki Kaisha Control apparatus for adhesive force of adhesive agent adhering between semiconductor wafer and substrate
JPS62189112A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS62189110A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS62189111A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS6392038A (en) * 1986-10-06 1988-04-22 Matsushita Electric Ind Co Ltd Chip feeding method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185981A (en) * 1988-01-21 1989-07-25 Fuji Electric Co Ltd Cryogenic container

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031918A (en) * 1983-07-29 1985-02-18 関西日本電気株式会社 Adhesive sheet for dicing semiconductor wafer
EP0226949A2 (en) * 1985-12-12 1987-07-01 Lintec Kabushiki Kaisha Control apparatus for adhesive force of adhesive agent adhering between semiconductor wafer and substrate
JPS62189112A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS62189110A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS62189111A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS6392038A (en) * 1986-10-06 1988-04-22 Matsushita Electric Ind Co Ltd Chip feeding method

Also Published As

Publication number Publication date
JPS6244409B2 (en) 1987-09-21

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