JPS5911522A - Magnetoresistance effect head - Google Patents
Magnetoresistance effect headInfo
- Publication number
- JPS5911522A JPS5911522A JP11945782A JP11945782A JPS5911522A JP S5911522 A JPS5911522 A JP S5911522A JP 11945782 A JP11945782 A JP 11945782A JP 11945782 A JP11945782 A JP 11945782A JP S5911522 A JPS5911522 A JP S5911522A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- thin film
- rugged parts
- pitches
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は信号磁界の変化を強磁性薄膜の抵抗の変化を介
して検出する磁気抵抗効果ヘッドにかかり、強磁性薄膜
全体に均一なバイアス磁界全印加することのできる構造
を提供する。Detailed Description of the Invention The present invention relates to a magnetoresistive head that detects changes in a signal magnetic field through changes in the resistance of a ferromagnetic thin film, and has a structure capable of applying a uniform bias magnetic field to the entire ferromagnetic thin film. I will provide a.
従来、強磁性薄膜の磁気抵抗効果を利用した磁気ヘッド
は第１図に示すようにして用いられていた。すなわち強
磁性薄膜よりなる磁気抵抗効果素子（以下ＭＲ素子と略
す）１は、記録媒体２に垂直に当近接して置かれ、両端
に配置した電極３゜４間に定電流１を流す（ただしＭＲ
素子１を支持する基板は図示せず。）。そして、記録媒
体２からの信号磁界による抵抗値変化を電極３，４間の
電圧変化として検知する。Conventionally, a magnetic head utilizing the magnetoresistive effect of a ferromagnetic thin film has been used as shown in FIG. That is, a magnetoresistive element (hereinafter abbreviated as MR element) 1 made of a ferromagnetic thin film is placed perpendicularly in close proximity to a recording medium 2, and a constant current 1 is passed between electrodes 3.4 arranged at both ends. M.R.
A substrate supporting element 1 is not shown. ). Then, a change in resistance value due to a signal magnetic field from the recording medium 2 is detected as a change in voltage between the electrodes 3 and 4.
ＭＲ素子１の比抵抗ρは、強磁性薄膜の磁化の方向と電
流の方向のなす角度全θとすると、無信号磁界時の比抵
抗をρ。とじて
ρ＝ρ０＋Δｐｍ、ＣＯ３２θ
で表わされる。したがって、比抵抗変化Δρと最大比抵
抗変化Δｐｍａｘとの比Δρ／Δρｍａｘ ｉ印加磁界
Ｈに対して第２図に示すような特性となり、信号磁界Ｈ
に対していちじるしい非直線性を有するので、バイアス
磁界ＨＢを加えて動作点を第２図のＰ点に設定する必要
がある。バイアス磁界を発生する方法としてはＭＲ素子
に隣接した導電体に電流を流す方法（コンダクタバイア
ス法）や永久磁石薄膜の磁極による方法（ハード膜バイ
アス法）などがあるが、第３図に示すようにいずれの方
法でも強磁性膜全体を均一に最適点に磁化することは困
難である。なお、図の曲線Ｃはコンダクタンスバイアス
法、同Ｈはハード膜バイアス法によるバイアス磁界を示
す。これは以下の理由による。The specific resistance ρ of the MR element 1 is the specific resistance when there is no signal magnetic field, assuming that the total angle between the magnetization direction of the ferromagnetic thin film and the current direction is θ. It is expressed as ρ=ρ0+Δpm, CO32θ. Therefore, the ratio of the specific resistance change Δρ to the maximum specific resistance change Δpmax, Δρ/Δρmax i, has the characteristics shown in Fig. 2 for the applied magnetic field H.
Since it has significant nonlinearity with respect to the magnetic field, it is necessary to set the operating point at point P in FIG. 2 by applying a bias magnetic field HB. Methods for generating a bias magnetic field include passing a current through a conductor adjacent to the MR element (conductor bias method) and using magnetic poles of a thin film of a permanent magnet (hard film bias method), as shown in Figure 3. In either method, it is difficult to uniformly magnetize the entire ferromagnetic film to the optimum point. Note that the curve C in the figure shows the bias magnetic field by the conductance bias method, and the curve H shows the bias magnetic field by the hard film bias method. This is due to the following reasons.
強磁性膜の磁化の方向θは
で決定されるから、信号磁界のない場合の磁化の方向を
最適バイアス方向をたとえば４６°とするためには、
ＨＢ ＝７５ （Ｈｘ 十ＨＤ ）
とする必要がある。第１図に示しだようなＭＲ素子にお
いては、磁化回転領域で動作しかつヒステリシス現象を
避けるために、Ｚ方向が磁化容易軸になるように一軸異
方性に、磁場中蒸着などの手段によって配向している。Since the magnetization direction θ of the ferromagnetic film is determined by be. In the MR element shown in Fig. 1, in order to operate in the magnetization rotation region and avoid the hysteresis phenomenon, it is made uniaxially anisotropic so that the Z direction becomes the axis of easy magnetization, by means such as evaporation in a magnetic field. Oriented.
ところがＨＢ＋ＨＤは薄膜形状やバイアス磁界発生手段
により場所によって異なるため、第３図に示すように磁
化方向の場所依存性を生じ、膜全体を最適バイアス点に
置けないため、歪が増加し、出力が低下することになる
。However, since HB+HD differs depending on the location depending on the thin film shape and bias magnetic field generation means, the magnetization direction becomes location dependent as shown in Figure 3, and the entire film cannot be placed at the optimal bias point, resulting in increased distortion and reduced output. This will result in a decline.
本発明は上記従来の欠点を除去するものであり、強磁性
薄膜に凹凸を形成しかつ凹凸を場所により変えて、薄膜
の異方性磁界をコントロールすることにより、無信号バ
イアス時のＭＲ素子の磁化方向を一定方向にそろえ、良
好な再生特性を有する磁気抵抗効果ヘッドを提供するこ
とを目的とする〇つ寸’）ＨＫｋコントロールしてＨＫ
−１−ＨＤを場所ごとにＨＢに等しくなるようにすれば
、磁化はＭＲ素子内全体で同一方向を向くことになる。The present invention eliminates the above-mentioned conventional drawbacks, and by forming unevenness on a ferromagnetic thin film and changing the unevenness depending on the location to control the anisotropic magnetic field of the thin film, the MR element can be improved when no signal is biased. The purpose is to provide a magnetoresistive head that aligns the magnetization direction in a certain direction and has good reproduction characteristics.
If -1-HD is made equal to HB at each location, the magnetization will be oriented in the same direction throughout the MR element.
異方性磁界のコントロールの方法としては、第４図に示
すように表面に凹凸（ピッチＰ、深さＤ）を形成した基
板上に強磁性薄膜を形成すると、第６図に示すように平
滑な基板上に磁場中蒸着したＮ ｉ −Ｆ ｅ膜の異方
性磁界ＨＫｏと比較して、凹凸基板上では溝の方向に大
きなＨＫ（ｉ７形成できる。したがって、基板の場所に
より凹凸のピッチや深さを変えれば任意のＨＫ″Ｉｆ：
もったＭＲ素子を実現可能である。As a method of controlling the anisotropic magnetic field, if a ferromagnetic thin film is formed on a substrate with an uneven surface (pitch P, depth D) as shown in Figure 4, it will become smooth as shown in Figure 6. Compared to the anisotropic magnetic field HKo of a Ni-Fe film deposited in a magnetic field on a rough substrate, a large HK (i7) can be formed in the direction of the grooves on a rough substrate. Any HK″If you change the depth:
It is possible to realize an MR element with a large amount of power.
以下本発明の実施例にもとづいて、さらに詳細に説明す
る。第６図に示すように、Ｍｎ −Ｚ ｎなどの強磁性
材料よりなる基板５上に７オトレジストを用いてピッチ
の異なるストライプパターンを形成し、イオンミリング
により深さ０．０２μｍの凹凸を形成する。この上にス
パッタなどの方法により、５ｉ０２などの非磁性絶縁膜
−ｒ−ｑｏ、５μｍ形成し、さらにＴ１などの非磁性導
電膜６ ｆ ０．２ ｐｍ、。The present invention will be described in more detail below based on examples. As shown in FIG. 6, stripe patterns with different pitches are formed on a substrate 5 made of a ferromagnetic material such as Mn-Zn using 7-photoresist, and unevenness with a depth of 0.02 μm is formed by ion milling. . A non-magnetic insulating film such as 5i02 (r-qo) with a thickness of 5 μm is formed thereon by a method such as sputtering, and a non-magnetic conductive film such as T1 (6 f 0.2 pm) is formed thereon.
Ｎｉ−Ｆｅなどの強磁性膜ｉ０．０５μｍ真空蒸着、ス
パッタリング、または電着（以下総称して蒸着という）
などの手段で形成する。ＭＲ素子１の形状にはフォトレ
ジストマスクを用いたリフトオフ。Ferromagnetic film i0.05μm such as Ni-Fe, vacuum evaporation, sputtering, or electrodeposition (hereinafter collectively referred to as evaporation)
Formed by means such as. The MR element 1 is shaped by lift-off using a photoresist mask.
マスクメッキ等の方法で直接形成しても、全面に薄膜全
被着後フォトレジストマスクを用いてケミカルエノテン
ク、スパッタエツチングやイオンミリングなどの方法で
不要部全エツチング（以下総称してフォトリングラフィ
という）して形成してもよい。さらにその上にＣｕ 、
Ａ ｌ 、 Ａｕ等の非磁性導電膜３を蒸着法および
フォトリングラフィ法により形成する。この後、Ｓ ｉ
Ｏ２などの非磁性絶縁材８を０．７μｍ蒸着し、さらに
Ｎｉ−Ｆｅなどの強磁性薄膜９ｉ０．４μｍ蒸着してシ
ールドとする。Even if it is directly formed by a method such as mask plating, unnecessary parts can be etched by a method such as chemical etching, sputter etching, or ion milling (hereinafter collectively referred to as photolithography) using a photoresist mask after a thin film is completely deposited on the entire surface. ) may be formed. Furthermore, Cu on top of that,
A nonmagnetic conductive film 3 made of Al, Au, etc. is formed by vapor deposition and photolithography. After this, S i
A non-magnetic insulating material 8 such as O2 is deposited to a thickness of 0.7 μm, and a ferromagnetic thin film 9i such as Ni-Fe is further deposited to a thickness of 0.4 μm to form a shield.
次にＳｉＯなどの非磁性材料を蒸着、ガラスなどの保護
カバーを接着して（図示せず）ヘッドとする。Next, a non-magnetic material such as SiO is deposited, and a protective cover such as glass is adhered (not shown) to form a head.
基板５１−に形成した凸凹は、第７図に示すように、電
流方向に平行でＭＲ素子１１］方向にピッチが異なって
おり、異方性磁界ＨＫは第８図に示すように幅方向の位
置により異なった値をもつ。したがって、第６図に示す
ヘッドの素子１，６に電流を流して最適バイアス点にし
た場合、ＨＢ 、 ＨＫ−１−ＨＤはそれぞれ第９図に
示すようになり、磁化の方向は第１０図に示すようにな
って、第３図に示した場合よりＭＲ素子全体にわたって
良好にバイアスされている。この例では３段階にＨＫを
変えた例を示したが、さらにＨＫの値を細かく変化すれ
ば、より良好にバイアスされることは言う壕でもない。As shown in FIG. 7, the unevenness formed on the substrate 51- is parallel to the current direction and has a different pitch in the MR element 11 direction, and the anisotropic magnetic field HK is in the width direction as shown in FIG. It has different values depending on the position. Therefore, when a current is applied to elements 1 and 6 of the head shown in FIG. 6 to reach the optimum bias point, HB and HK-1-HD will become as shown in FIG. 9, and the direction of magnetization will be as shown in FIG. 10. As shown in FIG. 3, the entire MR element is biased better than in the case shown in FIG. This example shows an example in which the HK is changed in three stages, but it goes without saying that if the HK value is changed more finely, the bias will be better.
なお、第８図、第９図および第１０図は本発明の詳細な
説明するだめの図であり、実際にはこのように急峻な変
化をしているわけではない。It should be noted that FIGS. 8, 9, and 10 are only diagrams for explaining the present invention in detail, and in reality, there is not such a steep change.
筐た、本実施例では基板に凹凸をつけた場合について述
べたが、強磁性薄膜表面に直接凹凸を形成してよい。Although this embodiment has been described with respect to the case in which the substrate is made uneven, the unevenness may be formed directly on the surface of the ferromagnetic thin film.
また、本実施例はコンダクタバイアス型のＭＲ素子につ
いて述べたが、他のバイアス方式や形状のＭＲ素子につ
いても応用できることは言うまでもない。Further, although this embodiment has been described with respect to a conductor bias type MR element, it goes without saying that the present invention can also be applied to MR elements with other bias methods and shapes.
以上述べたように、本発明はＭＲ素子の異方性を部分的
にコントロールすることにより、素子全体を均一に良好
なバイアス点に設定することを可能にしたものであり、
従来のヘッドに比べて歪が減少し、ダイナミックレンジ
が増大する。壕だ凹凸により異方性がコントロールされ
ているために、バルクハウゼンノイズが減少する。As described above, the present invention makes it possible to uniformly set the entire element to a favorable bias point by partially controlling the anisotropy of the MR element.
Distortion is reduced and dynamic range is increased compared to conventional heads. Barkhausen noise is reduced because the anisotropy is controlled by the trench unevenness.
第１図は従来の磁気抵抗効果ヘッドを説明するだめの斜
視図、第２図および第３図はその特性を説明するための
図、第４図および第５図はそれぞれ異方性磁界のコント
ロール方法を説明するため第９図および第１０図はそれ
ぞれこの実施例の効果を説明するための図である。
５・・・・・・基板、６・・・・・・非磁性導電膜、７
・・・・・非磁性絶縁膜、８・・・・・・非磁性絶縁材
、９・・・・・強磁性薄膜Ｏ
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
Ｂ ｈ
第３図
Ｑ σ、５ ／θ
′／Ｗ
第４図
第５図
凹凸源ｚＤ（Ａ）
第 ６ 図
、＜／
第 ７ 図
第 ８ 図
ρ タロＩθ
Ｙ／ｗFigure 1 is a perspective view to explain a conventional magnetoresistive head, Figures 2 and 3 are diagrams to explain its characteristics, and Figures 4 and 5 are diagrams for controlling the anisotropic magnetic field. For explaining the method, FIGS. 9 and 10 are diagrams for explaining the effects of this embodiment, respectively. 5...Substrate, 6...Nonmagnetic conductive film, 7
...Nonmagnetic insulating film, 8...Nonmagnetic insulating material, 9...Ferromagnetic thin film O Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure B h Figure 3 Q σ, 5 /θ ′/W Figure 4 Figure 5 Irregularity source zD(A) Figure 6, </ Figure 7 Figure 8 ρ Taro Iθ Y/w
Claims (1)
も一面に複数のピッチを有する凹凸全もつことを％徴と
する磁気抵抗効果ヘッド。A magnetoresistive head characterized by a ferromagnetic thin film whose resistance changes in response to a signal magnetic field, and at least one surface of which has concavities and convexities with a plurality of pitches.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11945782A JPS5911522A (en) | 1982-07-08 | 1982-07-08 | Magnetoresistance effect head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11945782A JPS5911522A (en) | 1982-07-08 | 1982-07-08 | Magnetoresistance effect head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5911522A true JPS5911522A (en) | 1984-01-21 |
Family
ID=14761838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11945782A Pending JPS5911522A (en) | 1982-07-08 | 1982-07-08 | Magnetoresistance effect head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5911522A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6013319A (en) * | 1983-07-01 | 1985-01-23 | Nec Corp | Magneto-resistance effect head |
| JPS60140217U (en) * | 1984-02-22 | 1985-09-17 | 日本電気株式会社 | magnetoresistive head |
| US5680091A (en) * | 1994-09-09 | 1997-10-21 | Sanyo Electric Co., Ltd. | Magnetoresistive device and method of preparing the same |
| US5736921A (en) * | 1994-03-23 | 1998-04-07 | Sanyo Electric Co., Ltd. | Magnetoresistive element |
| US5738929A (en) * | 1993-10-20 | 1998-04-14 | Sanyo Electric Co., Ltd. | Magnetoresistance effect element |
| GB2388915A (en) * | 2002-05-22 | 2003-11-26 | Toshiba Res Europ Ltd | Anisotropic magnetoresistive sensor |
-
1982
- 1982-07-08 JP JP11945782A patent/JPS5911522A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6013319A (en) * | 1983-07-01 | 1985-01-23 | Nec Corp | Magneto-resistance effect head |
| JPH0444323B2 (en) * | 1983-07-01 | 1992-07-21 | Nippon Electric Co | |
| JPS60140217U (en) * | 1984-02-22 | 1985-09-17 | 日本電気株式会社 | magnetoresistive head |
| JPH0227383Y2 (en) * | 1984-02-22 | 1990-07-24 | ||
| US5738929A (en) * | 1993-10-20 | 1998-04-14 | Sanyo Electric Co., Ltd. | Magnetoresistance effect element |
| US5736921A (en) * | 1994-03-23 | 1998-04-07 | Sanyo Electric Co., Ltd. | Magnetoresistive element |
| US5680091A (en) * | 1994-09-09 | 1997-10-21 | Sanyo Electric Co., Ltd. | Magnetoresistive device and method of preparing the same |
| GB2388915A (en) * | 2002-05-22 | 2003-11-26 | Toshiba Res Europ Ltd | Anisotropic magnetoresistive sensor |
| GB2388915B (en) * | 2002-05-22 | 2004-07-14 | Toshiba Res Europ Ltd | An anisotropic magnetoresistance sensor and a method of detecting a magnetic field |
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