JPS59111999A - Heat treatment of insulating film of single crystal - Google Patents
Heat treatment of insulating film of single crystalInfo
- Publication number
- JPS59111999A JPS59111999A JP22058782A JP22058782A JPS59111999A JP S59111999 A JPS59111999 A JP S59111999A JP 22058782 A JP22058782 A JP 22058782A JP 22058782 A JP22058782 A JP 22058782A JP S59111999 A JPS59111999 A JP S59111999A
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- insulating film
- heat treatment
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Abstract
Description
【発明の詳細な説明】
本発明は、単結晶シリコン基板表面に設けられた単結晶
絶縁膜の膜質を改善する手法に関しているＯ
近年、シリコン単結晶基板上にマグネシアスピネル（Ｍ
ｇＯ拳ＡＡ！ｚＱＩ）又はサファイア（ＡＡへ ）の単
結晶絶縁膜がエピタキシャル成長できるように−なりた
。かかる単結晶絶縁膜はその表面にさらに単結晶シリコ
ン膜がエピタキシャル成長可能であることから、従来の
Ｓ ＯＳ （５ｉｌｉｃｏｎ ｏｎ ５ａｐｐｈｉｒｅ
）基板に代用することができる。特にシリコン基板はＳ
Ｏ８の基体羽料であるサファイアに比べ安価大口径であ
ることから、・安価な半導体装置が実現可能である。Detailed Description of the Invention The present invention relates to a method for improving the film quality of a single crystal insulating film provided on the surface of a single crystal silicon substrate.
gofist AA! It has become possible to epitaxially grow single crystal insulating films of zQI) or sapphire (AA). Since such a single-crystal insulating film can further epitaxially grow a single-crystal silicon film on its surface, it is not suitable for conventional SOS (5 silicon on 5 apphire
) can be substituted for the substrate. In particular, silicon substrates are S
Since it is cheaper and has a larger diameter than sapphire, which is the base material of O8, an inexpensive semiconductor device can be realized.
ＳＯ８基板は容性容量を少なく出来ることに最大の特徴
があシ、上記単結晶シリコン膜／単結晶絶縁膜／シリコ
ン基板の構成をＳＯ８基板に代用するには単結晶絶縁膜
の容量を少なくすることが望まれる。マグネシアスピネ
ルおよびサファイアは、比誘電率がＳｔ鳴の３．９に比
べ８〜９と高いことから、容量を低減するためにはこれ
ら単結晶絶縁膜厚を増加させることが必要である。しか
しながら、例えばマグネシアスピネル膜では膜厚が１ミ
ク目ンを越えるとその表面の凹凸が著しくなルしかもシ
リコン基板との熱膨張係数の相違により膜にスリップラ
インが発生し、著しい場合にはクラック法が生じる。従
って、マグネシアスピネル膜の膜厚を１ミクロン以下で
容量を低減する工夫をする必要がある。The greatest feature of the SO8 substrate is that it can reduce the capacitance.In order to substitute the above structure of single crystal silicon film/single crystal insulating film/silicon substrate for the SO8 substrate, the capacitance of the single crystal insulating film must be reduced. It is hoped that Since magnesia spinel and sapphire have a higher dielectric constant of 8 to 9 than 3.9 for String, it is necessary to increase the thickness of these single crystal insulating films in order to reduce the capacitance. However, for example, when the thickness of a magnesia spinel film exceeds 1 micrometer, its surface becomes noticeably uneven.In addition, slip lines occur in the film due to the difference in thermal expansion coefficient with the silicon substrate. occurs. Therefore, it is necessary to take measures to reduce the capacitance by reducing the thickness of the magnesia spinel film to 1 micron or less.
これを解決する手段として、シリコン基板上に単結晶絶
縁膜を形成した後に、酸化雰囲気中で熱処理を行い、単
結晶絶縁膜を透して下のシリコン基板表面を酸化し、非
晶質５ｉ０２膜を厚く形成することである。かかる手段
を適用する場合には単結晶絶縁膜の厚さは０．５ミクロ
ン以下と薄くシ、一方弁晶質Ｓｉｎｇ膜厚は０．５ミク
ロン以上に厚く形成することが必要でアシ、かかる手法
によシ総容量を低減することが可能である。As a means to solve this problem, after forming a single-crystal insulating film on a silicon substrate, heat treatment is performed in an oxidizing atmosphere to oxidize the surface of the underlying silicon substrate through the single-crystal insulating film. The goal is to form a thick layer. When such a method is applied, the thickness of the single crystal insulating film must be as thin as 0.5 microns or less, while the crystalline Sing film must be formed as thick as 0.5 microns or more. Therefore, it is possible to reduce the total capacity.
しかしながら、本発明者の実験によれば、シリコン基板
上に例えば厚さ０．５ミクロンのマグネシアスピネル膜
をエピタキシャル成長した後に、尚該マグネシアスピネ
ル膜を透してシリコン基板表面に非晶質の厚い５ｉ０２
膜を形成すべく水蒸気酸化を行うと、前記マグネシアス
ピネル膜がはがれてしまった。このはがれの原因は非晶
質５ｉ０２膜とマグネシアスピネル膜との熱膨張係数の
差の大きいことにあると本発明者は推定しているが、い
ずれにしてもマグネシアスピネル膜がはがれてしまえば
後の工程の単結晶シリコン膜のエピタキシャル成長は不
可能でち）、何らかの解決策が望まれて本発明は、かか
る問題点を解決する手段を提供するものであシ、具体的
には高温の乾燥酸素雰囲気中で熱処理しマグネシアスズ
ネル膜の膜質を改善することにある。However, according to the inventor's experiments, after epitaxially growing a magnesia spinel film with a thickness of, for example, 0.5 μm on a silicon substrate, a thick amorphous 5i02 film was formed on the silicon substrate surface through the magnesia spinel film.
When steam oxidation was performed to form a film, the magnesia spinel film peeled off. The inventor estimates that the cause of this peeling is the large difference in thermal expansion coefficient between the amorphous 5i02 film and the magnesia spinel film, but in any case, once the magnesia spinel film peels off, The epitaxial growth of a single crystal silicon film using the process of The purpose is to improve the film quality of a magnesia-tinnel film by heat treatment in an atmosphere.
以下本発明の詳細な説明する。The present invention will be explained in detail below.
第１図はシリコン基板上に単結晶絶縁膜としてマグネシ
アスピネル膜を厚さ０．５ミクロン形成した後に、種々
の温度条件で乾燥酸素雰囲気中熱処理を行い、続いて水
蒸気酸化を行った場合にっｂてマグネシアスピネル膜の
はがれの有無を調べたものである。１０５０’Ｃ以下の
乾燥酸素中熱処理ではその後の水蒸気酸化にょシマグネ
シアスビネル膜にはがれが生じる。しかし、一旦１ｉｏ
ｏ’ｃ以上の乾燥酸素中で熱処理を行えばこのはがれは
生じない。Figure 1 shows the results obtained when a magnesia spinel film is formed to a thickness of 0.5 microns as a single crystal insulating film on a silicon substrate, heat treated in a dry oxygen atmosphere at various temperature conditions, and then steam oxidized. b) The presence or absence of peeling of the magnesia spinel film was investigated. In the heat treatment in dry oxygen at 1050'C or less, the magnesia vinyl film peels off due to subsequent steam oxidation. However, once 1io
This peeling does not occur if the heat treatment is performed in dry oxygen at a temperature above 0.0C.
一方、マグネシアスピネル膜の結晶性についてＸ線回折
法により調べ、乾燥酸素中熱処理前後に処理によＪ−グ
ネシアスビネルＭ（Ｄ結晶性が改善されるのは明らかで
あシ、同時に膜中の０２濃度が増加し、膜質が強固にな
ったためはがれが生じなくなったものと本発明者は推定
している。従ってシリコン基板上にマグネシアスピネル
膜を形成した後に１ｏｓｏｃを越える高温の乾燥酸素中
で熱処理を行えば、その後の水蒸気酸化によるマグネシ
アスピネル膜のはがれを防止する辷とができる。On the other hand, the crystallinity of the magnesia spinel film was investigated by X-ray diffraction method. The inventor estimates that this is because the film quality has become stronger and peeling has no longer occurred.Therefore, after forming a magnesia spinel film on a silicon substrate, heat treatment is performed in dry oxygen at a high temperature exceeding 1 osoc. For example, a layer can be formed to prevent the magnesia spinel film from peeling off due to subsequent steam oxidation.
当該乾燥酸素中熱処理の時間は、マグネシアスピネル膜
の厚さに依存するようで、例えば厚さ０．５ミクロンの
膜ではｌｌ０ｏ０ｃ、 ９０分で充分であったがα１ミ
クロンの膜では１１０ｄ’Ｃ、１０分で充分であった。The time for the heat treatment in dry oxygen seems to depend on the thickness of the magnesia spinel film; for example, for a film with a thickness of 0.5 microns, 90 minutes was sufficient at 110 d'C, but for a film with a thickness of α1 micron, it was 110 d'C, 10 minutes was sufficient.
膜が薄いと酸素が膜中金体に容易（拡散できることが関
係していると発明者は推定している。The inventor assumes that this is related to the fact that when the film is thin, oxygen can easily diffuse into the gold body in the film.
このように、本技術を用いれば単結晶シリコン膜／単結
晶絶縁膜／単結晶シリコン基板の構成を容易にかつ確実
に形成できる。In this way, by using the present technology, the structure of single crystal silicon film/single crystal insulating film/single crystal silicon substrate can be formed easily and reliably.
なお、上記説明では乾燥酸素雰囲気中で熱処理を行うと
説明したが、０．を含むＡｒ、 Ｎ２ 、 Ｈｅ等の不
活性もしくはこれに近いガス雰囲気中でも同様の効果を
得ている。In addition, in the above explanation, it was explained that the heat treatment is performed in a dry oxygen atmosphere, but 0. A similar effect can be obtained even in an inert gas atmosphere such as Ar, N2, He, etc., or a gas atmosphere close to this.
また、単結晶絶縁膜としてサファイアについても同様に
良い結果を得ている。Similar good results have also been obtained using sapphire as a single crystal insulating film.
第１図は熱処理条件と膜のはがれの有無を示す図であシ
、第２図は熱処理前後のＸ線回折結果を示す図である。FIG. 1 is a diagram showing the heat treatment conditions and the presence or absence of film peeling, and FIG. 2 is a diagram showing the X-ray diffraction results before and after the heat treatment.
Claims (1)
素雰囲気中もしくは酸素を含む不活性ガス雰囲気中で１
０５０℃を越える温度で熱処理することを特徴とした単
結晶絶縁膜の熱処理方法。A single-crystal silicon substrate with a single-crystal insulating film on its surface is heated in an oxygen atmosphere or an inert gas atmosphere containing oxygen.
A method for heat treatment of a single crystal insulating film characterized by heat treatment at a temperature exceeding 050°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22058782A JPS59111999A (en) | 1982-12-16 | 1982-12-16 | Heat treatment of insulating film of single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22058782A JPS59111999A (en) | 1982-12-16 | 1982-12-16 | Heat treatment of insulating film of single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59111999A true JPS59111999A (en) | 1984-06-28 |
| JPH049760B2 JPH049760B2 (en) | 1992-02-21 |
Family
ID=16753306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22058782A Granted JPS59111999A (en) | 1982-12-16 | 1982-12-16 | Heat treatment of insulating film of single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59111999A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018154552A (en) * | 2014-09-12 | 2018-10-04 | ホンコン バプテスト ユニバーシティ | Sapphire thin film-coated flexible substrate |
| US10941480B2 (en) | 2011-12-23 | 2021-03-09 | Hkbu R&D Licensing Limited | Sapphire thin film coated flexible substrate |
| US11028471B2 (en) | 2011-12-23 | 2021-06-08 | Hkbu R&D Licensing Limited | Sapphire thin film coated substrate |
| US11535926B2 (en) | 2011-12-23 | 2022-12-27 | Hkbu R&D Licensing Limited | Sapphire thin film coated substrate |
| US11713503B2 (en) | 2011-12-23 | 2023-08-01 | Hong Kong Baptist University | Sapphire coated substrate with a flexible, anti-scratch and multi-layer coating |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5336182A (en) * | 1976-09-16 | 1978-04-04 | Hitachi Ltd | Thin semiconductor single crystal film forming insulation substrate |
| JPS5538044A (en) * | 1978-09-12 | 1980-03-17 | Toshiba Corp | Preparation of multiplex-winding coil |
-
1982
- 1982-12-16 JP JP22058782A patent/JPS59111999A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5336182A (en) * | 1976-09-16 | 1978-04-04 | Hitachi Ltd | Thin semiconductor single crystal film forming insulation substrate |
| JPS5538044A (en) * | 1978-09-12 | 1980-03-17 | Toshiba Corp | Preparation of multiplex-winding coil |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10941480B2 (en) | 2011-12-23 | 2021-03-09 | Hkbu R&D Licensing Limited | Sapphire thin film coated flexible substrate |
| US11028471B2 (en) | 2011-12-23 | 2021-06-08 | Hkbu R&D Licensing Limited | Sapphire thin film coated substrate |
| US11535926B2 (en) | 2011-12-23 | 2022-12-27 | Hkbu R&D Licensing Limited | Sapphire thin film coated substrate |
| US11713503B2 (en) | 2011-12-23 | 2023-08-01 | Hong Kong Baptist University | Sapphire coated substrate with a flexible, anti-scratch and multi-layer coating |
| JP2018154552A (en) * | 2014-09-12 | 2018-10-04 | ホンコン バプテスト ユニバーシティ | Sapphire thin film-coated flexible substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH049760B2 (en) | 1992-02-21 |
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