JPS5890737A - Semiconductor device - Google Patents

Abstract

PURPOSE:To realize crossing of a thin film resistor and an Al wiring by providing the first kind of metal resistor and the first metal wiring on a semiconductor substrate through an insulation film, providing the second metal wiring which is in contact with the first wiring through the second insulation film and covering it with the third insulation film. CONSTITUTION:A Ni-Cr thin film resistor 203 is formed on the thermally oxide film 202 of the N type Si substrate 201 forming the pn junction, it is connected to an element by an Al wiring 204, an interlayer oxide film 205 is formed by the vapor growth method in such a thickness as corresponding to a voltage used. A window 207 is opened on the Al wiring 204 and the second Al wiring 208 is generated. At this time, the Al wiring 208 crosses the Ni-Cr resistor 203. Finally, the surface is covered with a surface protection film 205. According to this structure, a thin film resistor and the second Al wiring layer cross and a degree of freedom of mask layout can be increased.

Description

【発明の詳細な説明】 本発明は半導体装置に係り、籍に薄膜抵抗が設げらｎｆ
ｃ衿導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device in which a thin film resistor is provided in a semiconductor device.
This relates to a c-collar conductor device.

便来、４挨抵抗ｔｌ−乗積ｔＯ１路に用いる場合、第１
図の様な断面図の傳造が一般的であった。第１図におい
て、１０１は半４体基板、１０２は手導座漬板上に形成
ざｎた熱酸化膜、１０３は金媚七言んだ擾襖批抗、１０
４は薄膜抵抗と他の＾子とを結ぶ為のアルミニウム配−
−１０５は衣Ｎ保護の→気相成長酸化膜でめる。ＣＱ）
様な４遺においては、薄膜抵抗１０４と同一平面上にめ
るアルミ配媚は砥仇両署のアルミ電極以外の部分で薄膜
抵抗１０４と交叉することは出来す、この点が従来の拡
敢砥杭に比べると欠点であり、マスクレイアウト上のＩ
Ｉ′ｌＪ約ともなっていた。For convenience, when used in the 4th resistance tl - product tO1 path, the first
Denzo with cross-sectional views as shown in the figure were common. In FIG. 1, 101 is a half-quad board, 102 is a rough thermal oxide film formed on the guide seat plate, 103 is a diaphragm plate, and 10
4 is an aluminum wire for connecting the thin film resistor to other wires.
-105 is coated with a → vapor phase grown oxide film that protects N. CQ)
In such a case, the aluminum electrode placed on the same plane as the thin film resistor 104 can intersect with the thin film resistor 104 at a part other than the aluminum electrodes on both sides.This point is an improvement over the conventional method. This is a drawback compared to a grinding stake, and I
It was also about I'lJ.

本発明は、上記の本計な制約ｔ−填り除き、薄膜抵抗と
アルミニウム配線とが交叉し得る半導体装置を提供せん
とす４・ものである。The present invention aims to overcome the above-mentioned serious constraints and provide a semiconductor device in which thin film resistors and aluminum wiring can intersect.

本発明による半導体装ｍは、−４１１ｔ型の半導体基板
と、該半導体基板上に形成さｎた第１．の絶縁゛膜と、
該第１の絶縁膜上に形成さｎた少なくとも一櫨頌の金Ｉ
ｔ４Ｊ：ｖ成る抵抗体と、前記＃！ｌの絶縁膜上にフｌ
ｆｊ成さｉした第１の金捕配襟と、前記第１の１ｄ縁Ｉ
ＱＬに形成さγした第２の絶縁膜と前記第ｌの雀＠閂己
嫌上に設げら扛た目？Ｊｍｃｉ第２の絶縁膜の窓と、イ
４を、ｆｉｌＬで前記第１の金属配−と接するよう形１
Ｊｉ５さｆした弔２り曾−配線と、前記第２の絶縁膜上
にル成→γした第３の伯嫌模とから成ることを特徴とす
る。A semiconductor device m according to the present invention includes a -411t type semiconductor substrate and a first semiconductor substrate formed on the semiconductor substrate. an insulating film of
At least one layer of gold I formed on the first insulating film.
A resistor consisting of t4J:v and the #! On the insulating film of l
The first gold collar made of fj and the first 1d edge I
The second insulating film formed on the QL and the pattern formed on the first sparrow? Jmci the window of the second insulating film and A4 are shaped so as to contact the first metal wiring at filL.
It is characterized in that it consists of a wiring line formed by JI5F and a third pattern formed on the second insulating film.

以下、図・［Ｉ］？用いて本兄明の実施ｐＨに付き、説
明する。Below is the figure/[I]? The practical pH of the present invention will be explained below.

本完明の央・虐列を第２図（ａ）〜（ｄｌに示す。ＰＩ
Ｎ接合素子（図示ゼず）の形成さ［したＮ微半導体承板
２０１に熱酸化にＬり熱醸化膜２０２を形成し、この熱
酸化４２０１上に一例としてへｉ−ｔ；ｒよりＩｊｌＬ
る博嗅ケ触層し、匠米り写疼貢刻法にエリｌ＼ｉ−シ［
砥−ｆｃ２０３’を形成する（第２図（ａ））。The central and brutal lines of Honkanmei are shown in Figure 2 (a) to (dl). PI
After forming the N junction element (not shown), a thermally fermented film 202 is formed by thermal oxidation on the N microsemiconductor base plate 201, and as an example, the thermally fermented film 202 is
The tactile layer was created by the master craftsman, and the technique of copying and engraving was performed by the master craftsman.
A grindstone fc203' is formed (FIG. 2(a)).

人ＶＣ１？１−Ｃｒぶ抗２０３の電極配線として、父餌
のＰｉ′１１≠合本子を接続する配線（図示せず）とし
ての４１着アルミニウム配線２０４會形成し、社に全回
に気相成艮膚１川酸化膜２０６を１更用亀圧ＶＣＩｌ！
した＝＝にノ験成する（第２図（ｂ））。As the electrode wiring of the resistor 203 for the VC1? One change of oxidized film 206 on the completed skin and turtle pressure VCIl!
The result is ``(Figure 2(b))''.

第１・−アルミニウム配＠２０４上の１間酸化膜の４２
０７全形成し、この悪を１良して第１１曽アルミニウム
配線に按じかつ１−間酸化ｄ２０５上に泣１ｔする椋第
２アルミニウム配硼２０８’に形成する。1st - 42 of the 1st oxide film on the aluminum wiring @204
07 is completely formed, this defect is applied to the 11th aluminum wiring, and the second aluminum wiring 208' is formed on the oxidized d205.

この時アルミニウム配７２０８はｌＮ１−ｅｒ抵仇２０
３上にてへｉ−１；ｒ屯抗２０３とクロスすることがで
きる。最後に、気相成長１化膜を全面に成長させ、次間
保護膜２０５とする（第２図（ｄ））。At this time, the aluminum wiring 7208 has a lN1-er resistance of 20
3 can be crossed with the i-1; r tunnel 203. Finally, a vapor-phase monolithic film is grown over the entire surface to form an interlayer protective film 205 (FIG. 2(d)).

同、渠２図（ｄ）は第２に）ｔｃ）の　面図の入−Ｘｔ
の切断域に宿った。！ｆｒ＠図である。In the same way, culvert 2 (d) is secondly) tc) -Xt
It resided in the amputation area. ! fr@ diagram.

以上の様に、本発明によｎは、薄膜抵抗とアルミ配＠（
二層目）の交叉が可能で、マスクレイアウト上の自由度
が増すことになる。As described above, according to the present invention, n is a thin film resistor and an aluminum wiring (
The second layer) can be crossed over, increasing the degree of freedom in mask layout.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は薄膜抵抗を半導体基板に用いた場合の従来のＴ
４４断面図、第２図（ａ）〜（ｄ）は本元明実厖例にｊ
；ｂ薄膜抵抗の構造を製造順に示したもので、第２図（
ｄ）は被縫断面図で＃！２図（Ｃ）はその　面図である
。 なお図において、１０１＊２０１・・・・・・半導体裾
板、１（＋２＋２０２・・・・・・熱酸化膜、１０３＋
２０３・・・・・・ｌＮ１−Ｃｒ北抗、１０４う２０４
・・°・°°アルミ３ウム配・＋１５１（第一１−目）
、１０５，２０５・・・・・・力／＜−酸化膜、’２０
６・・・・・・１曽旧■獲化膜、　２０７・・・・・・
１−曲便化擬の４．２０８・・・・・・第２Ｊ曽目アル
ミニウム自己−壁、　　マ゛　ある。 め　１図 篤　Ｚ図Figure 1 shows the conventional T when a thin film resistor is used on a semiconductor substrate.
44 sectional views, Figures 2 (a) to (d) are based on the original Ming actual example.
;b The structure of the thin film resistor is shown in the order of manufacture, as shown in Figure 2 (
d) is #! in the cross-sectional view of the sewing material. Figure 2 (C) is its top view. In the figure, 101*201... Semiconductor base plate, 1(+2+202... Thermal oxide film, 103+
203...lN1-Cr Hokuhan, 104 U204
・・°・°°Aluminum 3um arrangement・+151 (1st 1-st)
, 105,205...force/<-oxide film, '20
6・・・・・・1 Zeng old■prey membrane, 207・・・・・・
1 - Contoured pseudo 4.208... 2nd J Somme Aluminum Self - Wall, my. Figure 1 Atsushi Figure Z

Claims (1)

【特許請求の範囲】[Claims] 一４４型の半４庫唸板と、核半４体漬５板上に形成さｎ
たｉｇｌの氾−膜と該第ｌの絶縁膜上に形成さｒＬ７’
ｃ少なくとも一４類の金Ｉ４より成る抵抗体と萌ｉＬ第
１ｖ艷嫌膜上に形成さ扛た第ｌの金椙配−と、前ａｄ第
Ｉの杷−膜上に形成さｆＬ次第２の杷−１４と、前記第
１の金鴎配機上に設けらｎた前記第２の絶縁膜の４と、
該ｇ紫通して前記第８１の金属配線と咲するよう形成さ
扛た第２の金礪配被と、’＋１１　ａｄ第２の絶縁膜上
に形成ざｎた第３の東縁膜とｒゴむことを待鐵とする半
導体装置。- Formed on a 44-type semi-four-barrel plate and a nuclear half-four plate and a five-plate n
rL7' formed on the flood film of Igl and the first insulating film
c A resistor made of at least Class 14 gold I4, a first metal layer formed on the first layer, and a second layer formed on the second layer. 4 of the second insulating film provided on the first gold plater,
a second metal layer formed on the 81st metal wiring through the g; a third eastern edge film formed on the second insulating film; Semiconductor equipment that relies on solid state.