JPS5879704A - Method of producing nonlinear resistor - Google Patents
Method of producing nonlinear resistorInfo
- Publication number
- JPS5879704A JPS5879704A JP56177218A JP17721881A JPS5879704A JP S5879704 A JPS5879704 A JP S5879704A JP 56177218 A JP56177218 A JP 56177218A JP 17721881 A JP17721881 A JP 17721881A JP S5879704 A JPS5879704 A JP S5879704A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- oxide
- nonlinear resistor
- mol
- producing nonlinear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 3
- 238000001354 calcination Methods 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910001922 gold oxide Inorganic materials 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 239000002002 slurry Substances 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 241000556720 Manga Species 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000003232 water-soluble binding agent Substances 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は非曲線抵抗体に係り、特に電気系統における過
電圧保護製ＩＣ二使用される非直１抵抗体の製造方法に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a non-curvilinear resistor, and more particularly to a method for manufacturing a non-linear resistor used in overvoltage protection ICs in electrical systems.
電気系統において、正常な電圧に重畳される過電圧を除
去し、電気系統ｔ＊ｍするため、過電圧保珈５ｋｉｌｌ
が用いられる。In electrical systems, overvoltage protection is used to remove overvoltages that are superimposed on normal voltages and prevent electrical system t*m.
is used.
この過電圧保Ｍ１装皺には、正常な電圧ではほぼ絶縁特
性を示し、過電圧が印加されたときには比較的抵抗値に
なる非直−抵抗体か用いられる。For this overvoltage protection M1 mounting, a non-direct resistor is used, which exhibits almost insulating properties under normal voltage, but becomes relatively resistant when overvoltage is applied.
非直線抵抗体は炭化硅素（ｓｉｏ）着しくは酸化亜鉛（
ｚｎｏ）”金属酸化物ｔｆ＆合し、成形した素材【輪成
ルて造られる。The non-linear resistor is made of silicon carbide (SIO) or zinc oxide (
zno)"Metal oxide tf & combined, molded material [made by ring formation.
例えばｚｎｏ７６篭ルＳ、酸化マグネ７ウム（ＭｇＯ）
１口−モル囁、酸化ビス！ス（Ｂｉｇ Ｏｓ ）、酸化
アンチ毫ン（８ｂｇ Ｏｓ ）、酸化コバルト（ｃｏｏ
）、酸化マンガｙ（ＭｎＯ）、酸化りＷ Ａ （ｏｒｌ
ｏ＠）、１１化鉄（ν＠１０１）を夫々０．０５ないし
龜５モル嚢１合計８モルー１秤量し混合する。For example, zno76 Kaguru S, Magnesium 7 oxide (MgO)
1 sip-mole whisper, bis oxide! Big Os, anti-oxidant (8bg Os), cobalt oxide (coo
), manga oxide (MnO), oxidized W A (orl
0.05 to 5 mol of each of iron 11 (v@101) and iron 11 (v@101) are weighed and mixed.
混合物をプレスして成形し、１２００℃ないし１３００
℃の温度で８時間輪威して、直径６０■、厚８１０ｍの
円板状非直ｌｌ抵抗体のＩＩ材をつくり電極を盆属嬉射
、法で形成して、非Ｉ［！１抵抗体とするＯ
この様にして製造した非曲線抵抗体においては、大電流
パルス【印加したときの非直線抵抗体の変化率が大きく
、従って長期間−：わたって嘗パルスや電圧ナージバル
スを受ける過電圧保護ｇｋ＃Ｌには不適当であり、長期
間にわたって安定した電気特性をもつ非ＩＬ＃ＩＩａ抗
体が要望されていた。The mixture is pressed and molded at 1200°C to 1300°C.
A disk-shaped non-straight resistor II material with a diameter of 60 cm and a thickness of 810 m was prepared by heating at a temperature of 810 °C for 8 hours, and electrodes were formed using a non-straight resistor method. In the non-curved resistor manufactured in this way, the rate of change of the non-linear resistor is large when a large current pulse is applied, and therefore the non-linear resistor has a large rate of change when a large current pulse is applied. It is unsuitable for the overvoltage protection gk#L receives, and a non-IL#IIa antibody with stable electrical properties over a long period of time has been desired.
本発明は上記賛望に龜みなされたもので、長期間にわた
り繰り返し過電流パルスが印加されても電気特性の劣化
の少ない非ａＩｉ抵抗体の製造方法を提供するものであ
る・
次に本発明の実施例を馬面を参照して説明する。The present invention has been made in view of the above-mentioned demands, and provides a method for manufacturing a non-aIi resistor whose electrical characteristics are less likely to deteriorate even when overcurrent pulses are repeatedly applied over a long period of time.Next, the present invention An example of this will be described with reference to a horse.
Ｚｎ０ｆ例えは８０モル−と、少な（とも一種類の金属
酸化物、例えばＭｇＯ１４モル−１ＢｉｌＯ１２毫ル嘔
、ａｍ）、０．１．５モル−１ＣＯＯ１，１モル饅、Ｏ
ｒ＠ Ｏ畠Ｑ、５モル憾、Ｍｎ００．５モル嘩、ν＠、
０１０．４モル−の割合で秤量する０次に秤量した酸
化物を例えばボールミルに入れ、脱イオン水を一緒に２
４−間ボールミルを作動させて、温合する。Zn0f, for example, has a small amount of 80 mol (one kind of metal oxide, for example MgO 14 mol - 1 BilO 12 mol, am), 0.1.5 mol - 1 COO 1,1 mol, O
r@O Hatake Q, 5 moles, Mn00.5 moles, ν@,
For example, put the weighed oxide in a ball mill and add deionized water together with 2
Operate the ball mill for 4 minutes to warm up.
混合前の酸化物に例えはポリビニルアルコール【Ｍ化物
に対する重量比で例えば１００分の１混合する。温合さ
れた酸化物とポリビニルアルコールとは実質釣に均質（
：混合されている。An example of the oxide before mixing is polyvinyl alcohol (mixed at a weight ratio of, for example, 1/100 to the M compound). The heated oxide and polyvinyl alcohol are essentially homogeneous (
: Mixed.
次に酸化Ｉ＃を造粒１ｉａｉ４ＩＩ４えはスプレードラ
イヤーに入れ１粒径が例えば１００ないし３００ンクロ
ンの球状団粒−二する。Next, the oxidized I# is granulated into spherical aggregates each having a particle size of, for example, 100 to 300 microns.
この輪車状混合物をプレスにかけ、例えは直径１００ｍ
、厚さ２５■の円板状に成形する。This wheel-shaped mixture is applied to a press, for example, with a diameter of 100 m.
, mold into a disk shape with a thickness of 25 cm.
この成形体を電気炉に入れ仮焼する。仮焼温度は例えは
９００℃で、−間は例えば２時ｆｌｌｌ１１樵度が逼轟
である。この仮一体の―）Ｃ，ポリビニルアルコールと
水からなる水溶性バインダーと、金属酸化＠例えば酸化
アンチモン、酸化ビスマス、二酸化ケイＩ！を混合した
スラｙ−ｔスプレーガンで噴ｉｉｍ有する。This molded body is placed in an electric furnace and calcined. The calcination temperature is, for example, 900°C, and the temperature is, for example, 2 o'clock to 11 o'clock. This temporary combination of -) C, a water-soluble binder consisting of polyvinyl alcohol and water, and metal oxides such as antimony oxide, bismuth oxide, silicon dioxide I! Spray with a Sly-T spray gun containing a mixture of
この伽ｔｔ塗布した仮焼体を温度が例えば１０００℃な
いし１５００℃の炉に入れて、Ｉｋ布＠を仮焼体側面５
：焼き付ける。This calcined body coated with Gatt is placed in a furnace at a temperature of, for example, 1000°C to 1500°C, and the Ik cloth @ is placed on the side surface of the calcined body.
: Burn.
焼成後の円板状焼成体は焼成前より収羅するがほぼ均質
な組成、密度を有する・
次（二円板状焼成体の上下両＊Ｔｋｔｉｉ＜研磨して焼
成＠を露出させる。この露出函に例えばアルミニウム【
＊属浴射して、亀＆ｔ−形成し非ｉｈ＊抵抗体として完
成させる。The disc-shaped fired body after firing is more concentrated than before firing, but has a nearly homogeneous composition and density. For example, aluminum [
*Metal irradiation is carried out to form turtle & t- and complete as a non-Ih* resistor.
この橡にして展進した非ｍＩＩ抵抗体の電気特性ｔｉｌ
１図及び第２図に示す。第１図に１０１ムの電ｆｌｋ
ｔｏｏ−まで印加したときのｖ１Ｍムの値の置化皐（ム
Ｖ／’ＶＡＭ□）を示す１図において１曲−ムは従来の
ａｍ方法による非ｗ７ＬＩ！抵抗体の値を、また曲−Ｂ
は本発明の非直−抵抗体の値を示す、ｍから明らかなよ
うｊ：、本発明の製造方法による非Ｉ［ｌＩ抵抗体の電
気的特性は着じるしく改善された。Electrical characteristics of the non-mII resistor developed using this method
Shown in Figures 1 and 2. Figure 1 shows 101 mu electric flk.
In Figure 1, which shows the change in the value of v1M (V/'VAM□) when the voltage is applied up to too-, one song is the non-w7LI! The value of the resistor is also curve-B.
represents the value of the non-direct resistor of the present invention, and as is clear from m, the electrical characteristics of the non-I[lI resistor by the manufacturing method of the present invention are significantly improved.
ｓ２図は印加矩形波電流値ｔ１０（１ムまで友えたとき
の合格率を示す。The s2 diagram shows the pass rate when the applied rectangular wave current value t10 (1m) is reached.
一一ムは従来の、また−−Ｂは本発明の夫４製造方法に
よる非Ｉ！−抵抗体の合格率である。11 is conventional, and --B is non-I according to the manufacturing method of the present invention! - Pass rate of resistor.
因から明らかなように、印加電流が小さな時Ｃ：は、両
曲−ム、Ｂの差は小さいが、大電流パルスが印加される
と、従来の非厘線抵抗体の合格率は著しるしく低下する
・
上記実施例において、酸化亜鉛の含有率及び金属酸化物
の組成及び含有率は、上記実施例に限定されるものでは
ない・
また、工程の条件も上記実施例に限定されるものではな
いことは勿論である。As is clear from the above, when the applied current is small, the difference between the two curves and B is small, but when a large current pulse is applied, the pass rate of the conventional non-wire resistor becomes significant. In the above examples, the content of zinc oxide and the composition and content of metal oxides are not limited to the above examples.In addition, the process conditions are also limited to the above examples. Of course not.
第１図及び１３２図は本発明の製造工程を用（１て製造
した非ａｉＩｗａ抗体の電気特性を説明する１ｌＩ−因
である。
（７３１７）代迎人 弁理士 則 近 憲 佑（ほか１
名）Figures 1 and 132 are diagrams explaining the electrical properties of non-AIIwa antibodies produced using the production process of the present invention.
given name)
Claims (1)
混合する工程と、該混合物を所定形状−二成形する工程
と、該成形体を仮焼する工程と、該仮焼体の＠面に高抵
抗層を形成する金−酸化物のスラ９−を噴霧黴布する工
程と、該塗布物を設けた仮焼体を焼成する工程と、前記
焼成体に電極を形成する工程とを具備してなることを特
徴とする非曲線抵抗体の製造方法。Zinc oxide and at least one metal oxide powder and t-
A step of mixing, a step of molding the mixture into a predetermined shape, a step of calcining the molded body, and a slurry 9 of gold-oxide to form a high resistance layer on the @ side of the calcined body. A method for manufacturing a non-curved resistor, comprising the steps of spraying a mold, firing a calcined body provided with the coating, and forming an electrode on the fired body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56177218A JPS5879704A (en) | 1981-11-06 | 1981-11-06 | Method of producing nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56177218A JPS5879704A (en) | 1981-11-06 | 1981-11-06 | Method of producing nonlinear resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5879704A true JPS5879704A (en) | 1983-05-13 |
Family
ID=16027219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56177218A Pending JPS5879704A (en) | 1981-11-06 | 1981-11-06 | Method of producing nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5879704A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62252105A (en) * | 1986-04-24 | 1987-11-02 | 三菱電機株式会社 | Manufacture of zinc oxide type arrestor element |
| JPS62252104A (en) * | 1986-04-24 | 1987-11-02 | 三菱電機株式会社 | Manufacture of zinc oxide type arrestor element |
-
1981
- 1981-11-06 JP JP56177218A patent/JPS5879704A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62252105A (en) * | 1986-04-24 | 1987-11-02 | 三菱電機株式会社 | Manufacture of zinc oxide type arrestor element |
| JPS62252104A (en) * | 1986-04-24 | 1987-11-02 | 三菱電機株式会社 | Manufacture of zinc oxide type arrestor element |
| JPH0525362B2 (en) * | 1986-04-24 | 1993-04-12 | Mitsubishi Electric Corp | |
| JPH0525363B2 (en) * | 1986-04-24 | 1993-04-12 | Mitsubishi Electric Corp |
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