JPS5873119A - Electron-beam lithography device - Google Patents
Electron-beam lithography deviceInfo
- Publication number
- JPS5873119A JPS5873119A JP17147081A JP17147081A JPS5873119A JP S5873119 A JPS5873119 A JP S5873119A JP 17147081 A JP17147081 A JP 17147081A JP 17147081 A JP17147081 A JP 17147081A JP S5873119 A JPS5873119 A JP S5873119A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- temperature water
- constant
- sample chamber
- duct
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は、４子ビ一ム描画装置に関するものである。[Detailed description of the invention] The present invention relates to a four-child beam drawing device.
従来、電子ビーム描画装置の鏡随内は、第ｌ図のどとく
電子銃ｌ１コンデンナレンズ２．３などで構成されてい
る．電子銃ｌで照射され良電子ビームは、コンデンサレ
ンズ２を通って対物用コンデンサレンズ３でＩｌｊｉｌ
ｌ！ｌされ、試料′ｉ１７内のタエーハに正確なパター
ンを描画している．この時対物レンズ３用コイルは、焦
点距離の小さなレンズを構成するために、コイルに比較
的大きいＩＥ流を流して、一子ビームＶ祠兼を行う必要
が６る。この九め対物し／ズ３用コイルは、１を流によ
シ＃＆を発生し、その熱が鏡筒取付フ〉／ジおよび―筒
下部から熱幅射として、賦科富内のテーブル４ある腔は
、クエーハ５に伝わっていた。このためウェー・・５が
テーブル４の熱によプ変形し、寸法娯差を生じてしまう
ため、テグイクロン単位の精度を確保することができな
い欠点があり九。Conventionally, the mirror assembly of an electron beam lithography system is comprised of a condenser lens 2.3, an electron gun 11, and the like shown in FIG. The good electron beam irradiated by the electron gun 1 passes through the condenser lens 2 and is sent to the objective condenser lens 3.
l! 1, and an accurate pattern is drawn on the surface of sample 'i17. At this time, since the coil for the objective lens 3 constitutes a lens with a small focal length, it is necessary to pass a relatively large IE current through the coil to perform single-beam V correction. This coil for the 9th objective lens 3 generates the 1st current and the heat is radiated from the lens barrel mounting flange and the lower part of the barrel to the table inside the lens barrel. Four cavities were transmitted to Quaha-5. As a result, the wafer 5 is deformed by the heat of the table 4, resulting in dimensional tolerances, so there is a drawback that accuracy in units of Teguiron cannot be ensured.9.
本発明は、このような事情に鑑みなされたもので、虚部
と試料室とを接続する構ｍ取付７ランジ内に適当な空洞
を設け、その中に恒温水を流すこと１に特徴とし、その
目的は、恒温水により、対物レンズ用コイルの発熱によ
る試料室および試料室内のテーブル、＃ｒ：、料６温直
上昇を防ぐことにある。The present invention has been made in view of the above circumstances, and is characterized in that (1) a suitable cavity is provided in the structural attachment 7 lange connecting the imaginary part and the sample chamber, and constant temperature water is flowed into the cavity; The purpose of this is to prevent the temperature of the sample chamber and the table, #r:, and material 6 inside the sample chamber from rising directly due to heat generated by the objective lens coil, using constant temperature water.
以下、図面を参照して本発明の実Ｊｌ１例を説明する。Hereinafter, an actual example of the present invention will be described with reference to the drawings.
第２図は本発明一実施例を示す装置ｆｌｆＴ向図で、＃
１筒取付７フ／シロの内部に恒温水を流す流出入穴８を
設けである。恒温水には通常上０．１”０以下に制御さ
れ九ものが用いられる。FIG. 2 is a view of the apparatus flfT showing an embodiment of the present invention, #
An inflow/outflow hole 8 for flowing constant temperature water is provided inside the single cylinder mounting 7/bottom. Constant temperature water is usually controlled to 0.1" or less and is used.
特に第３図に示すように、試料台４と対向する面に円板
状に恒温水循環溝７を設け、それと直交し九少なくとも
２本以上の恒温水流出入口８をつけることにより、効果
的に目的を達成できることがわかった０円板上の溝は一
度震を大きく作り板状の円板９を痔１ｍあるいはσリン
グをはんだビス止めによって害鳥に製作することができ
た。′＊九真空もれも問題とはならなかった。向第２図
及び第３図において、第１図と同じ符号は同じものを示
す。In particular, as shown in Fig. 3, by providing a disc-shaped constant temperature water circulation groove 7 on the surface facing the sample stage 4 and attaching at least two constant temperature water inlets 8 perpendicular to it, the objective can be effectively achieved. It was found that the groove on the disc 0 could be used to create a large vibration once, and the plate-shaped disc 9 could be made into a pest by fixing the hemorrhoid 1m or the σ ring with solder screws. '*9 Vacuum leakage was not a problem either. In FIGS. 2 and 3, the same reference numerals as in FIG. 1 indicate the same things.
このような７う／ジ構造とすることによって、コイルよ
り発生した熱を効率よく恒温水に吸収することができ、
７ランジ裏面から熱副射により試料台を温めることもな
くな）、さらに熱伝導によって賦科寅自体を温めてしま
うことがなくなｐ１夷験の結電かなシの効果が認められ
丸。また鏡筒を組立、電源を供給すると従来では試料室
全体に熱が伝わり温度が一定となるまでかなシの時間を
費してい九が、試料室、−簡の温度が安定し、一定とな
るまでの時間が短縮され、温度安定性が良いことがわか
っ九。By having such a 7-way structure, the heat generated from the coil can be efficiently absorbed into the constant temperature water.
7) There is no heating of the sample table due to heat radiation from the back of the lunge), and furthermore, the heat conduction does not heat up the material itself, which confirms the effect of the electrical condensation of the p1 experiment. In addition, when the lens barrel is assembled and power is supplied, heat is transmitted throughout the sample chamber and it takes some time until the temperature becomes constant.However, the temperature in the sample chamber becomes stable and constant. It was found that the heating time was shortened and the temperature stability was good.
崗、７フ／ジ内に恒温水を流す方法としては櫨々考見ら
れ、神に水でなくとも比熱の大きい流体であれば冷媒と
して例んでも良い、さらに７ランジの構造によっては、
恒温水の通し方などもさまざまでめシ憶諷水の流出、流
入口は各１制とは限らない−するに発明の要旨を逸脱し
ない範囲で種々考えられる。The method of flowing constant-temperature water into the 7-room range is widely considered, and even if it is not water, any fluid with a large specific heat can be used as a refrigerant.Furthermore, depending on the structure of the 7-room range,
There are various methods of passing the constant temperature water, and the number of inlets and outlets for the water is not necessarily limited to one each - however, various methods can be considered without departing from the gist of the invention.
以上のべ九本発明によれば、−筒取付フランジ内に恒温
水を流し冷却することによって、試料室内の温度上昇が
抑えられ、試料の寸法８度が確保できるようになった。According to the present invention as described above, by flowing constant temperature water into the tube mounting flange for cooling, the temperature rise in the sample chamber can be suppressed and the sample size of 8 degrees can be ensured.
また−筒本体への冷却作用があプまた電子ビーム摘１ｍ
績置全体の温度を安定させることができるようになり効
果は大であった。In addition, the cooling effect on the tube body is increased, and the electron beam
The temperature of the entire station could be stabilized, and the effect was great.
縞１図は４子ビーム描１ｌｉｉ装置の断面図、第２図は
本発明の電子ビーム描画装置の断面図、第３図は第２図
Ｏ鏡筒取付７ツンジ部付近を具体的に示した断面図でめ
る。
１：ｉ１子銃、 ２：コンデンサレンズ。
ｓ：対物用コンデンサレンズ。
４：テーブル、 ５；ウェーハ。
６：鏡筒取付７″）ンジ、 ７：試料室。
８：恒温水の流出入穴。
代理人 弁理士 則 近 ＩＩｉ 佑ほか１名Figure 1 shows a sectional view of a four-beam lithography system, Figure 2 is a sectional view of an electron beam lithography system of the present invention, and Figure 3 specifically shows the vicinity of the O-lens barrel attachment 7 tsunge shown in Figure 2. Show it in cross-sectional view. 1: i1 subgun, 2: condenser lens. s: Objective condenser lens. 4: table, 5: wafer. 6: Lens tube attachment 7''), 7: Sample chamber. 8: Inflow/outflow hole for constant temperature water. Agent: Patent attorney Yu Chika Nori IIi and 1 other person
Claims (2)
置し、真空に保たれる試料室、予備室、およびそれらを
駆動する駆動源などから成る、電子ビーム描ｉｉｉ装置
において、前記電子ビーム光学ｉｉｌ！筒と前記試料室
とを互いに固定するＡｍ取付フラ／ジ内に、恒温水を流
すように構成したことを特徴とした電子ビーム描ｔｉｉ
ｉ装置。(1) In an electron beam lithography III apparatus, which is equipped with an electron beam optical column, a sample stage for holding a sample, a sample chamber kept in a vacuum, a preliminary chamber, and a drive source for driving them, the electron beam Beam optics il! Electron beam drawing tii characterized in that it is configured to flow constant temperature water into the Am mounting flange that fixes the tube and the sample chamber to each other.
i device.
を設け、それと直交した少なくとも２本の恒温水流出入
穴をフランジ上面まで貫通させ九事を特徴とする特許 ム描画装置。(2) 7F is a patented drawing device characterized by having a disc-shaped monument on the surface facing the sample stage, and at least two constant-temperature water inflow and outflow holes perpendicular to the disc-shaped monument penetrating to the top surface of the flange.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17147081A JPS5873119A (en) | 1981-10-28 | 1981-10-28 | Electron-beam lithography device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17147081A JPS5873119A (en) | 1981-10-28 | 1981-10-28 | Electron-beam lithography device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5873119A true JPS5873119A (en) | 1983-05-02 |
Family
ID=15923700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17147081A Pending JPS5873119A (en) | 1981-10-28 | 1981-10-28 | Electron-beam lithography device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5873119A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005327901A (en) * | 2004-05-14 | 2005-11-24 | Hitachi High-Technologies Corp | Electron beam lithography apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100668A (en) * | 1978-01-26 | 1979-08-08 | Toshiba Corp | Electron-beam exposure unit |
| JPS5643157B2 (en) * | 1978-03-20 | 1981-10-09 |
-
1981
- 1981-10-28 JP JP17147081A patent/JPS5873119A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100668A (en) * | 1978-01-26 | 1979-08-08 | Toshiba Corp | Electron-beam exposure unit |
| JPS5643157B2 (en) * | 1978-03-20 | 1981-10-09 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005327901A (en) * | 2004-05-14 | 2005-11-24 | Hitachi High-Technologies Corp | Electron beam lithography apparatus |
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