JPS5861763A - 触感知器消化装置 - Google Patents

触感知器消化装置

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Publication number
JPS5861763A
JPS5861763A JP56161282A JP16128281A JPS5861763A JP S5861763 A JPS5861763 A JP S5861763A JP 56161282 A JP56161282 A JP 56161282A JP 16128281 A JP16128281 A JP 16128281A JP S5861763 A JPS5861763 A JP S5861763A
Authority
JP
Japan
Prior art keywords
extinguisher
sensing mechanism
compression plate
mechanism box
tactile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56161282A
Other languages
English (en)
Inventor
武笠　均
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP56161282A priority Critical patent/JPS5861763A/ja
Priority to US06/433,520 priority patent/US4495219A/en
Publication of JPS5861763A publication Critical patent/JPS5861763A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
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    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material

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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Fire-Extinguishing By Fire Departments, And Fire-Extinguishing Equipment And Control Thereof (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ）Ｊｏｅ この発明は、手動式の消化器に、自動制御能力を、持た
せる装置で、各種消化器と、各種感知器とを、低価格に
て、結びつけた、触感石器消化装置である。
従来、消化器と感知器とは、別途で、手動式の消化器の
場合の欠点は、人間がいて、火災発生場所に持って行き
、適切な行動を、とらないと、太さな、２次災害に、結
びつくことの方が多い、火災の場合は、特に、早期発見
、初期消化が第一である、感知器についても、同じ事が
言える。感知器が作動Ｌ、ｔｉ＝＃がなっていても又、
いたづらか、ひどいところになると、うるさいからと言
う事で、感知器のスイッチを切っである所がある。不在
で使用する所へは、設置しないで下さいと、わざわざ断
わっである。感知器の一番必要とされる、台所やストー
ブ等、一番犬全使用する所へ、設置（−ないで、早期発
見、初期消化など、で八るけずが□ない。又、火災感知
、管轄そして、自前消化と、ユニットになった、消化設
備は、市販されている。
しかし、これでは、高価すぎて、買えない。安いもので
も、７０萬円から８０萬円、高いものになると数市萬円
台にもなる。これでは、一般家庭で幻、買えｈい。しか
し１、この触感雑器消化装置であれば、現在、家庭にお
いて、使用されている、手動式の消化器にも、使用でき
、自動消化、手動消化遠隔消化、も可能で、上記の欠点
金おぎない、早期発見、初期消化、そして低価格にて、
生産でき力。今、東京、あるいは、大阪等の大都市で、
地震による、火災が発生した場合１．そり、も、関東大
震災のように、昼食時に、５００ケ所より、火災が発生
した場合とてもじゃないが、一度に、消化することは、
不ｏｒ能であ乙。この触感知器消１ヒ装置であれば、コ
ンロ、風呂場の空だき、地震による火災等、火災発生場
所のおそれのめる、方向へ噴射ヘッドを向けておけば、
ネットパネル１９で感知し、すぐに消化してくれる。又
遠隔操作も可能である。
未発明を、図面について説明すると、 ｏＳ ｒｌ）ネットパネル１９′に、測温体２３、熱収縮チ＝
−ブ２８、互換アダプター２４、リード線接続プラグ２
２リード線】３、を設ける。
（２）ネットパネル１９′に、超高感度発光素子及び受
光素子２１、を設け、リード線接続プラグ２２、及びリ
ード線１３、を設ける。
（３）触感知メカボックスＩＶＣ，ネットパネル１９、
よりの、信号を受信するための接続プラグ２２、を設け
る。
（４）触感知メカボックス１に、強力なバネ、ヱアーシ
リンダー１４を取り付け、圧縮板レール１７にそって、
圧縮板１５を設ける。
（５）触感知メカボックスｌ［Ｈ１安全ビン＋２、安全
装置２７、遠隔操作に必要な器具を設ける。
（６）触感知メカボックス１には、乾電池ボックス１６
、感知器回路、電子部品１８、及び警報装置を設ける。
（７）ホース１１、の中間には、ジヨイントを設け、伸
縮自在にし、先端には、噴射へソド２５、を設ける。
Ｎｏら 未発明は、以上の構成によりなる、触感雑器消化装置で
ある。
図について、説明すると、 台所のコンロで火災が発生した場合、まずフン口よりの
炎が壁をったｂ天井にもえ広がる。天井には、ネットパ
ネル１９が設置されており、炎、煙、有害々ガス、等を
直接感知する。感知された信号は、リード線１３を伝い
、感知器回路、電子部品１８内へ行く。感知器回路、電
子部品１８は、伝達され−１４が働いて、圧縮板１／−
ル１７、を伝って、圧縮板１５が降下する５、そうする
と、起動レバー９も降下し、ボース１１より薬剤４が吹
き出すようになる。
以上が使用例でるる。
第２図は、未発明の触感雑器消化装置の正面図。
第３図は、未発明の触感雑器消化装置の側面図。
第４図は、未発明の触感雑器消化装置の平面図。
測温体弐イ・ソトバ不ル３９′の構造図の一例図。
第６図は、未発明のネットパネル１９の一例図。
充電式ネットパネル１９の構造図の一例図。
スイッチ、水銀スイッチ、その他使用、ア、測温体２３
、イ、リード線１３．２心グラスクール線又は２心ビニ
ールケーゾル、つ、温度補償抵抗、互換アダプター２４
、ヱ、リード線１３．３心ビニールケーブル又は、３心
グラスクール線、オ、ＩＣ使用）、、、よ、や□やｏ７
１．イツああ。１８やあ１８、。
１８２、黒１８３、赤１８４、力、Ａ　Ｏ１００Ｖ又け
、２ｏｏｖ。
１２Ｖ、９ＶＸ電源１６゜ 第８図は、光電式カー）　ＩＪツジ接続図の一例。
８′元電式感知器の基本回路の一例の説明。
１、パルス波形、生成回路令図ＩＢ−ＰＬＢＤ（光源）
ドライブ電流を発生させる分周回路。
１１、微小電流増幅、図１８◆信号レベルを判定しく煙
、ガス、災、など）触感知警報信号を発生する回路。
１１１、ノマソテリー′Ｗ−俯、図、】４．１５．＋電
池、電圧低Ｔ：を、検出し、予告１８号を発生する回路
、。
ｖｌ、発振回路、基ｒｊｆ＝　ｆｔ源、図１６、）発振
回路、基準電源。
８″元電式感知器の基本回路の一例の説す」。
（−）微小電流増幅１図１８．第８図の１１、　（ニ）
パルス波形、生成回路１図１８、第８図の１、（三）発
振回路、図１８、第８図のｖｌ、　（四）バッチＩＪ　
、−警報、第８図の１１１、　（五）ＢＺ、火災管端、
バ・ノテリーーー告ブデー、第８図の１１、　（六）　
煙判定。
警報、１吉Ａ発生、図１８、第８図の１１、　（七）基
準漬諒、第８図ノｖｉ、　（八）　　］　ｏｏ７７ｓ　
〜２ｏＯＪ５、図１３（九）ネットパネル、煙、灸、検
出部、図１９、（十）発光ダイぢ一ド、図２１、　（±
）受光ダイオード、図２１、　（自　ガス散乱、煙散乱
、炎散乱、（２））　アース、図２９、　儒）　ＬＳ■
チップ、　け→ＥＺ、図１８、五　第８図ノ１１、　倶
）電源、図１６第８図のｖｌ。
第９図６ま、台所１吏用図例。
第１０図Ｃま、ストーブ使用図例。
】け、触感知器消化装置末体、２Ｖｉ、手動式消化器本
体、３は、消化器内ボンベ、４け、薬剤、５は、防湿封
板、６け、上蓋、７Ｉ″ｉ、薬剤ザイホン管、８は、ガ
スサイホン管、９け、起動レバー１０は、さげ手、１１
は、ホース、１２は、安全ビン、】３は、リード線、１
４は、強力なバネ、又は、ヱアーシリンダー、１５は、
圧縮板、１６は、乾電池ボックス、１７は、圧縮板レー
ル、１８は、ｘｃ（ｐ用（Ｃよる感知器回路、電子部品
、及び警報装置、１９は、図の一例、１９″は、光電式
ネットパネル構造図の一例、２０は、継ぎ金具、ジヨイ
ント、２１は、超高感度の受光素子及び発光素子、２２
は、リード線接続プラグ、２３ハ、カートリッジ、内蔵
、サーミスタバイメタル、その他生導体、２３は、測温
体、カートリッジ接続図の一例、２４は、互換アダプタ
ー、温度補償抵抗、２５ば、噴射ヘッド、ノズル、２６
はストーブ、コンロ等火災発生源、２７は、安全装置特
許出願人　　武笠　均 仲／　１３ オど図 ！？ 矛４１７ ｔ、！５１ｍ １９′ 牙６１刀 １３″ ２ 蓬？図 ２３’ 昭和５７年３月１９日 １、事件の表示昭和５６年特許願第１６１２８２号２、
発明の名称触感知器消化装置 ３、補正をする者 ４、補正命令の日付 ６、補正の内容別紙の通り

Claims (1)

  1. 【特許請求の範囲】 （イ）　手動式の消化器に、自動制御能力を、持たせる
    装置、消化器本体２、の起動レバー９と、さげ手１０、
    の部分を把持、圧下作動させる為の装置、糸感知メカボ
    ックス１１を設ける。 （ロ）糸感知メカボックス１、には感知器、ネットパネ
    ル１９、を設け、測温式１９と、光電式１９に分ｋｉ　
    　糸感知メカボックス１、にけ、圧縮板１５、を設け、
    圧縮板レール１７、を伝って、起動レバー９、を作動さ
    せる。 （二　消化聡太体２のホース１１、を伸縮自在にし、ジ
    ヨイント部を設け、先端には噴射へンド２５、を設ける
    ５、また遠隔操作装置も設ける。 以上を特徴とする、触感石器消化装置である。。
JP56161282A 1981-10-09 1981-10-09 触感知器消化装置 Pending JPS5861763A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56161282A JPS5861763A (ja) 1981-10-09 1981-10-09 触感知器消化装置
US06/433,520 US4495219A (en) 1981-10-09 1982-10-08 Process for producing dielectric layers for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56161282A JPS5861763A (ja) 1981-10-09 1981-10-09 触感知器消化装置

Publications (1)

Publication Number Publication Date
JPS5861763A true JPS5861763A (ja) 1983-04-12

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ID=15732135

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (2)

Country Link
US (1) US4495219A (ja)
JP (1) JPS5861763A (ja)

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