JPS5856423B2 - force transducer - Google Patents

force transducer

Info

Publication number
JPS5856423B2
JPS5856423B2 JP3173978A JP3173978A JPS5856423B2 JP S5856423 B2 JPS5856423 B2 JP S5856423B2 JP 3173978 A JP3173978 A JP 3173978A JP 3173978 A JP3173978 A JP 3173978A JP S5856423 B2 JPS5856423 B2 JP S5856423B2
Authority
JP
Japan
Prior art keywords
plate
strain
flexible substrate
force transducer
force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3173978A
Other languages
Japanese (ja)
Other versions
JPS54124769A (en
Inventor
洋一 大高
明 大手
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Hokushin Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Hokushin Electric Corp filed Critical Yokogawa Hokushin Electric Corp
Priority to JP3173978A priority Critical patent/JPS5856423B2/en
Publication of JPS54124769A publication Critical patent/JPS54124769A/en
Publication of JPS5856423B2 publication Critical patent/JPS5856423B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Measurement Of Force In General (AREA)

Description

【発明の詳細な説明】 本発明は圧力、流量、浮力等に対応する力を歪検出素子
を用いて電気信号に変換する力変換器に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a force transducer that converts force corresponding to pressure, flow rate, buoyancy, etc. into an electrical signal using a strain detection element.

第1図は従来公知の力変換器の一例を示す構成説明図で
ある。
FIG. 1 is a configuration explanatory diagram showing an example of a conventionally known force transducer.

この装置は、感知ダイヤフラム1が受けた圧力を伝達棒
2を介してレバー3の一端に伝え、このレバー3によっ
てたわみ基板4を撓わますように構成したものである。
This device is constructed so that the pressure received by the sensing diaphragm 1 is transmitted to one end of a lever 3 via a transmission rod 2, and the lever 3 bends a flexible substrate 4.

そして、たわみ基板4上であって、歪が互に反対極性で
働く2ケ所に歪検出素子51.52を配置させている。
Strain detection elements 51 and 52 are placed on the flexible substrate 4 at two locations where strain acts with opposite polarities.

このような構成にかかわる従来装置においては、たわみ
基板4上において、一部分において引張りが、他の部分
において圧縮が均等に生ずるようにするために、たわみ
基板4を1枚の平らな基板で構成することができず、構
成が複雑となる欠点があった。
In conventional devices with such a configuration, the flexible substrate 4 is constructed from a single flat substrate in order to uniformly apply tension in one part and compression in other parts of the flexible substrate 4. However, there was a drawback that the configuration was complicated.

ここにおいて、本発明の目的は、構造が簡単で、しかも
精度の良い力変換器を実現しようとするものである。
Here, an object of the present invention is to realize a force transducer with a simple structure and high precision.

第2図A、Bは本発明の主要部をなすたわみ基板の一実
施例を示す構成説明図で、Aは斜視図、Bは側面図であ
る。
FIGS. 2A and 2B are structural explanatory diagrams showing one embodiment of a flexible substrate that constitutes the main part of the present invention, where A is a perspective view and B is a side view.

このたわみ基板4ば、一端に変換すべき力Pが加えられ
ろ第1の板41と、第1の板41の他端に一端が接続さ
れ第1の板410両側に平行に設けられ他端が連結板4
3により連結された第2の板42とで構成され、1枚の
板で作られている。
A force P to be converted is applied to one end of the flexible substrate 4, and a first plate 41 has one end connected to the other end of the first plate 41 and a first plate 410 that is provided parallel to both sides of the first plate 410 and the other end. is the connecting plate 4
3 and a second plate 42 connected by 3, and is made of one plate.

而して、連結板43の部分が固定されている。Thus, the connecting plate 43 is fixed.

421.422はそれぞれの第2の板42に所要距離へ
だてで設けられた溝である。
421 and 422 are grooves provided in each of the second plates 42 at a required distance.

歪検出素子51.52はたわみ基板4の溝421゜42
2の設けられている個所の、溝421.422と反対側
の表面に配置されている。
The strain detection elements 51 and 52 are located in the grooves 421 and 42 of the flexible substrate 4.
2 is provided on the surface opposite to the grooves 421 and 422.

このような構成のたわみ基板4において、いま第2図B
に示すように、第1の板41の先端411に矢印方向に
荷重Pが与えられるものとすれば、第1の板41に作用
する曲げモーメント線図は第3図Aに示すように、また
、第2の板42に加わる曲げモーメント線図は第3図B
に示すようになる。
In the flexible substrate 4 having such a configuration, now FIG.
As shown in FIG. 3A, if a load P is applied to the tip 411 of the first plate 41 in the direction of the arrow, the bending moment diagram acting on the first plate 41 will be as shown in FIG. , the bending moment diagram applied to the second plate 42 is shown in FIG. 3B.
It becomes as shown in .

すなわち、第2の板の溝421.422の設けられてい
る個所には大きさがほぼ等しく、符号(極性)が反対の
曲げモーメントが作用する。
That is, bending moments of approximately equal magnitude and opposite signs (polarity) act on the portions of the second plate where the grooves 421 and 422 are provided.

したがって、第2の板42の溝421.422の設けら
れている個所の断面係数を等しくしておけば、第2の板
42の溝421.422とは反対側の表面に生じる歪は
、符号が反対で大きさがほぼ等しいものとなる。
Therefore, if the section modulus of the portion of the second plate 42 where the grooves 421, 422 are provided is made equal, the strain generated on the surface of the second plate 42 opposite to the grooves 421, 422 will have a sign of are opposite, and the sizes are almost equal.

よって、この場合、歪検出素子51には引張歪が、歪検
出素子52には圧縮歪がそれぞれ生ずる。
Therefore, in this case, tensile strain occurs in the strain detection element 51, and compressive strain occurs in the strain detection element 52.

これらの歪検出素子51.52からの電気信号は、例え
ば、ブリッジ回路等により差動的に検出され、与えられ
た荷重に対応する電気信号を得ろことができる。
The electrical signals from these strain detection elements 51 and 52 are differentially detected by, for example, a bridge circuit, and an electrical signal corresponding to the applied load can be obtained.

一般に、たとえば、第4図に示すような単一片持ちビー
ム6において、ビーム6に垂直に加えられた直線力Pは
ビーム6の変形と共に、ビーム6に対して垂直よりθ角
度ズレを生ずる。
In general, for example, in a single cantilever beam 6 as shown in FIG. 4, a linear force P applied perpendicularly to the beam 6 causes deformation of the beam 6 and a θ angle deviation from the perpendicular to the beam 6.

これによる誤差を避けろためにビーム6に常に垂直に力
が作用するようにするには、モーメント入力になるよう
に変換する機構を附加すればよいが、この機構の誤差が
加わり、いずれにしても力→電気出力の関係が非線形に
なりやすい。
In order to avoid errors caused by this and to ensure that the force always acts perpendicularly to the beam 6, it is possible to add a mechanism that converts it into a moment input, but the error of this mechanism is added, and in any case, The relationship between force and electrical output tends to be nonlinear.

本発明においては、荷重Pが第■の院41に加えられた
場合に、第2の板42の溝421,422の設けられて
いる部分の板厚が薄くなっているので、この部分に応力
が集中し、この部分が伸縮を起し、第2図Bに示すごと
く、第1の板41は荷重Pに対応して平行移動するのみ
である。
In the present invention, when the load P is applied to the second chamber 41, since the plate thickness of the portion of the second plate 42 where the grooves 421 and 422 are provided is thinner, stress is applied to this portion. is concentrated, this portion expands and contracts, and the first plate 41 only moves in parallel in response to the load P, as shown in FIG. 2B.

この結果、荷重量の変化に伴って、荷重条件が変化する
ことはなく、力→電気出力の関係が線形なものが得られ
る。
As a result, the load conditions do not change as the load amount changes, and a linear relationship between force and electrical output can be obtained.

また、平板構造なので、成形時の機械加工等が容易であ
り、特に溝421,422は外部に開いた凹状であるの
で加工が容易である。
Further, since it has a flat plate structure, machining during molding is easy, and in particular, the grooves 421 and 422 are concave shapes that open to the outside, so machining is easy.

また、歪検出素子の取付面の研摩時の固定方法等も容易
である。
Furthermore, the method of fixing the mounting surface of the strain detection element during polishing is easy.

また、荷重Pば、第1の板41の両側に設けられた第2
の板42によって均等に支持されるので安定である。
Moreover, the load P is the second plate provided on both sides of the first plate 41.
It is stable because it is evenly supported by the plates 42.

第5図は本発明の他の実施例の構成説明図である。FIG. 5 is an explanatory diagram of the configuration of another embodiment of the present invention.

本実施例においては、第2の板42それぞれに歪検出素
子51.52を2個ずつ配置し、A。
In this embodiment, two strain detection elements 51 and 52 are arranged on each of the second plates 42, and A.

B群としたもので、A、B群それぞれでフルブリッジを
構成することができる。
The A and B groups can each form a full bridge.

歪の検出個所がA。B群それぞれ1個所にまとまるので
、たわみ基板の厚さのバラツキ等の影響が少くなる。
The distortion detection point is A. Since each of group B is gathered in one place, the influence of variations in the thickness of the flexible substrate is reduced.

また、蒸着ストレインゲージ等を使用する場合にはゲー
ジが1個所にまとまるので蒸着のバラツキの影響が少く
なる。
Furthermore, when a vapor deposition strain gauge or the like is used, the gauges are gathered in one place, so the influence of variations in vapor deposition is reduced.

更に、A、B群の特性を比較し、より特性の良好な方を
選択することができろ。
Furthermore, it would be possible to compare the characteristics of groups A and B and select the one with better characteristics.

また、一方を、予備として用いろことも出来、製作上の
歩留り改善に寄与すると共に、信頼性を高くすることが
できる。
Further, one can be used as a spare, which contributes to improving the production yield and increases reliability.

なお、前述の実施例においては、荷重Pは溝421.4
22にそれぞれ、大きさが等しく符号の反対な歪が生ず
るように、第1の板41の個所に加えられろように説明
したが、これにかぎることはなく、要するに、荷重Pは
歪検出素子51゜520間に曲げモーメント零の個所が
生ずるような第1の板41の位置に加えられればよい。
In addition, in the above-mentioned embodiment, the load P is applied to the groove 421.4.
Although it has been described that the load P is applied to a portion of the first plate 41 so as to cause a strain of equal magnitude and opposite sign in each of the strain detection elements 22 and 22, the load P is not limited to this. It is only necessary to apply it to the first plate 41 at a position where a bending moment of zero occurs between 51° and 520°.

なお、前述の実施例では、第2の板42に溝421.4
22が設けられたが、溝421,422の替りに穴等を
設けてもよく、要するに、第2の板42の歪検出素子の
取付けられている部分の歪が大きく生ずるようなもので
あればよい。
In addition, in the above-mentioned embodiment, the groove 421.4 is formed in the second plate 42.
22 is provided, but holes or the like may be provided instead of the grooves 421 and 422. In short, as long as the portion of the second plate 42 where the strain detecting element is attached is likely to cause a large strain, good.

なお、感度を高めろ必要がなければ、溝421,422
等はなくてもよいことは勿論である。
In addition, if there is no need to increase the sensitivity, use the grooves 421 and 422.
Of course, there is no need for the above.

なお、第2の板42上に蒸着あるいは、スパッタリング
等により、薄膜形歪検出素子51.52を直接形成する
ようにすれば、 (1)複数の歪検出素子を同時に、同一条件で成形でき
るので、それぞれの抵抗値、あるいは抵抗温度係数等、
特性のそろったものが得られる。
Note that if the thin film strain sensing elements 51 and 52 are formed directly on the second plate 42 by vapor deposition or sputtering, (1) multiple strain sensing elements can be molded at the same time under the same conditions; , each resistance value or resistance temperature coefficient, etc.
You can obtain products with uniform characteristics.

(2)歪検出素子とたわみ基板との接合は分子間結合で
あり、接着剤が不要であるため、接着剤等に起因するク
リープ現象等がなく、感度の低下もなく、高温の被測定
体の影響により接着剤が変形したり、接着機能が低下す
るような恐れもない。
(2) The bonding between the strain sensing element and the flexible substrate is an intermolecular bond, and no adhesive is required, so there is no creep phenomenon caused by adhesives, etc., and there is no decrease in sensitivity. There is no fear that the adhesive will be deformed or its adhesive function will deteriorate due to the influence of.

(3)薄膜形歪検出素子は極めて物性的に安定なもので
、経年変化等、特性上の信頼性が高い。
(3) Thin film strain sensing elements are extremely stable in physical properties and have high reliability in terms of characteristics such as aging.

(4)貼付は形歪検出素子は接着作業が必要であるが、
薄膜形歪検出素子は装置により基板上に直接作り込むも
ので、量産性に優れ、同時に多数のものを同一条件で作
り込むことができる。
(4) For pasting, the shape distortion detection element requires gluing work,
Thin-film strain sensing elements are manufactured directly onto a substrate using equipment, and are excellent in mass production, allowing many to be manufactured at the same time under the same conditions.

(5)薄膜パターン形成時にブリッジ回路結線用のリー
ドを作り込むことができるので、ブリッジ結線工数が低
減できろ。
(5) Leads for bridge circuit connections can be created during thin film pattern formation, so the number of bridge connection steps can be reduced.

(6) ブリッジ回路の零調用補正抵抗もあらかじめ
同時に作り込んでおくか、あるいは、各歪検出素子の抵
抗値をトリ□ングにより修正して補正することもできる
(6) The zero adjustment correction resistor of the bridge circuit can also be created at the same time, or the resistance value of each distortion detection element can be corrected by trimming.

なお、薄膜形歪検出素子51.52は、たとえば、次の
ようにして作ることができる。
Note that the thin film strain sensing elements 51 and 52 can be made, for example, as follows.

(1)たわみ基板40表面を研磨し十分な平坦面にする
(1) Polish the surface of the flexible substrate 40 to make it a sufficiently flat surface.

(11)無機絶縁材料、例えばSiOを平坦面に数μ程
度の厚さで蒸着し、可撓変形体の表面に絶縁層を形成す
る。
(11) An inorganic insulating material, such as SiO, is deposited on a flat surface to a thickness of about several microns to form an insulating layer on the surface of the flexible body.

(iii) 絶縁層の上に例えばNi−Cr、Pt等
の抵抗材料を適当な厚さに蒸着し、その後エツチング等
の手法によって所望の抵抗パターン層を形成する。
(iii) A resistive material such as Ni-Cr or Pt is deposited to an appropriate thickness on the insulating layer, and then a desired resistive pattern layer is formed by etching or other techniques.

(Iψ 抵抗層の一部に電極材料、例えばAuを数μ程
度の厚さで蒸着し、電極層を形成する。
(Iψ An electrode material, such as Au, is deposited to a thickness of about several microns on a part of the resistance layer to form an electrode layer.

(V) 電極層に例えば金線のリード線を接続する。(V) Connect a lead wire, for example, a gold wire, to the electrode layer.

(Vll 抵抗層および電極層上に無機絶縁材料な数
μ程度以下の厚さで蒸着し、保護膜を形成する。
(Vll) An inorganic insulating material is deposited on the resistance layer and the electrode layer to a thickness of about several μm or less to form a protective film.

なお、この保護膜はなくともよい。Note that this protective film may be omitted.

以上説明したように、本発明によれば、たわみ基板を1
枚の平板で構成できろもので、構造が簡単なうえに、次
のような種々の特長を有する、精度の良い力変換器が実
現できる。
As explained above, according to the present invention, the flexible substrate is
It is possible to realize a highly accurate force transducer that can be constructed from a single flat plate, has a simple structure, and has the following various features.

(1)歪検出素子として蒸着ストレインゲージを使用す
る場合、同一表面上に同時製作することができるので、
抵抗値、温度係数のそろった素子が得られろ。
(1) When using vapor-deposited strain gauges as strain sensing elements, they can be manufactured simultaneously on the same surface.
It is possible to obtain elements with uniform resistance values and temperature coefficients.

(2)伸び歪と縮み歪を各々2個所検出してフルフリツ
ジ回路を構成する場合に、同種類の歪の検出個所は各々
1個所にまとまり、たわみ基板の厚さのバラツキ、蒸着
のバラツキ等による影響が少い。
(2) When constructing a full-fridge circuit by detecting elongational strain and compressive strain at two locations each, the detection locations for the same type of strain are collected at one location each, and this is due to variations in the thickness of the flexible substrate, variations in vapor deposition, etc. Has little impact.

(3)カー歪特性が線形なものが得られる。(3) A linear Kerr distortion characteristic can be obtained.

(4)直線的な力をそのまま直接的に変換することがで
きる。
(4) Linear force can be directly converted as it is.

(5)平板的構造なので成形加工が容易である。(5) Since it has a flat structure, it is easy to mold.

(6)対称構造であるので、安定である。(6) It is stable because it has a symmetrical structure.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は在米公知の力変換器の一例を示す構成説明図、
第2図は本発明の主要部をなすたわみ基板の一例を示す
構成説明図で、Aは平面図、Bは側耐図、第3図A、B
は第2図のたわみ基板の曲げモーメント線図、第4図は
本発明を説明するための説明図、第5図は本発明の他の
実施例の構成説明図である。 4・・・たわみ基板、41・・・第1の板、421,4
22・・・溝、42・−・第2の板、51.52・・・
歪検出素子。
FIG. 1 is a configuration explanatory diagram showing an example of a force transducer known in the United States;
FIG. 2 is a configuration explanatory diagram showing an example of a flexible board that forms the main part of the present invention, where A is a plan view, B is a side view, and FIGS. 3A and B.
2 is a bending moment diagram of the flexible substrate, FIG. 4 is an explanatory diagram for explaining the present invention, and FIG. 5 is an explanatory diagram of the configuration of another embodiment of the present invention. 4... Flexible board, 41... First plate, 421, 4
22...Groove, 42...Second plate, 51.52...
Strain detection element.

Claims (1)

【特許請求の範囲】 1一端側に変換すべき力の加えられる第1の板と該第1
の板の他端に一端が接続され第1の板の両側に平行に設
けられ他端が固定された第2の板とを具えた平板状のた
わみ基板、前記第2の板の一方の表面上に所要距離へた
てて設けられた少くとも2個の歪検出素子を具備し、前
記歪検出素子間に曲げモーメント零の個所が生ずるよう
に前記第1の板に前記変換すべき力が加えられるように
された力変換器。 2 たわみ基板の歪検出素子の設けられた個所を可撓部
とし、該可撓部に応力を集中させるようにした特許請求
の範囲第1項記載の力変換器。 3 可撓部として、たわみ基板に溝または穴加工の施さ
れた特許請求の範囲第2項記載の力変換器。 4 歪検出素子として、たわみ基板の表面に形成された
絶縁層と、該絶縁層上に形成された抵抗パターン層と、
該抵抗パターン層上の一部に形成された電極層とにより
構成された特許請求の範囲第1項又は第2項又は第3項
記載の力変換器。
[Claims] 1. A first plate to which a force to be converted is applied to one end side;
a second plate having one end connected to the other end of the plate, and a second plate provided parallel to both sides of the first plate and having the other end fixed; one surface of the second plate; The force to be converted is applied to the first plate such that at least two strain detecting elements are provided vertically at a required distance above the first plate, and a point of zero bending moment is generated between the strain detecting elements. Force transducer adapted to be applied. 2. The force transducer according to claim 1, wherein the portion of the flexible substrate where the strain detection element is provided is a flexible portion, and stress is concentrated on the flexible portion. 3. The force transducer according to claim 2, wherein a groove or a hole is formed in the flexible substrate as the flexible portion. 4. As a strain detection element, an insulating layer formed on the surface of the flexible substrate, a resistance pattern layer formed on the insulating layer,
The force transducer according to claim 1, 2, or 3, comprising an electrode layer formed on a portion of the resistive pattern layer.
JP3173978A 1978-03-22 1978-03-22 force transducer Expired JPS5856423B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3173978A JPS5856423B2 (en) 1978-03-22 1978-03-22 force transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3173978A JPS5856423B2 (en) 1978-03-22 1978-03-22 force transducer

Publications (2)

Publication Number Publication Date
JPS54124769A JPS54124769A (en) 1979-09-27
JPS5856423B2 true JPS5856423B2 (en) 1983-12-14

Family

ID=12339395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3173978A Expired JPS5856423B2 (en) 1978-03-22 1978-03-22 force transducer

Country Status (1)

Country Link
JP (1) JPS5856423B2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3232817C1 (en) * 1982-09-03 1988-09-08 Endress U. Hauser Gmbh U. Co, 7867 Maulburg Spiral spring
JPS59116509A (en) * 1982-12-24 1984-07-05 Shimadzu Corp Load cell scale
CA1216312A (en) * 1983-05-19 1987-01-06 Stephen A. Patoray Load cell apparatus
US4600066A (en) * 1983-05-19 1986-07-15 Reliance Electric Company Load cell apparatus
DE3624240A1 (en) * 1986-07-18 1988-01-28 Vdo Schindling MECHANICAL-ELECTRIC CONVERTER
US4898255A (en) * 1989-01-17 1990-02-06 Toledo Scale Corporation Planar load cell
JPH0463027U (en) * 1990-10-05 1992-05-29
JP3771439B2 (en) * 2000-11-30 2006-04-26 アルプス電気株式会社 Load sensor

Also Published As

Publication number Publication date
JPS54124769A (en) 1979-09-27

Similar Documents

Publication Publication Date Title
KR100432068B1 (en) Pressure sensor
US4311980A (en) Device for pressure measurement using a resistor strain gauge
US4141253A (en) Force transducing cantilever beam and pressure transducer incorporating it
US4777826A (en) Twin film strain gauge system
US4299130A (en) Thin film strain gage apparatus with unstrained temperature compensation resistances
US4173900A (en) Semiconductor pressure transducer
US6234027B1 (en) Pressure sensor for semi-conductor
US6655216B1 (en) Load transducer-type metal diaphragm pressure sensor
JPS61500632A (en) Pressure sensor with flat overpressure stop for measuring diaphragm
US4974596A (en) Transducer with conductive polymer bridge
US20030005768A1 (en) Sensor
US5962792A (en) Beam strain gauge
US4793194A (en) Piezoresistive transducer
JPS5856423B2 (en) force transducer
US4737473A (en) Piezoresistive transducer
JPS5856424B2 (en) force transducer
US4418326A (en) Measuring device using a strain gauge
JPH07101747B2 (en) Semiconductor pressure sensor
JPS5856100B2 (en) force transducer
JPS5856099B2 (en) force transducer
JPS5856101B2 (en) force transducer
JPH085656A (en) Acceleration converter
JPS59217374A (en) Semiconductor strain converter
US3621435A (en) Transducer beam with back-to-back related deposited film type strain gages
JPS6124836B2 (en)