JPS5856361A - Forming method for alpha-tantalum film by magnetron- sputtering device - Google Patents
Forming method for alpha-tantalum film by magnetron- sputtering deviceInfo
- Publication number
- JPS5856361A JPS5856361A JP15458581A JP15458581A JPS5856361A JP S5856361 A JPS5856361 A JP S5856361A JP 15458581 A JP15458581 A JP 15458581A JP 15458581 A JP15458581 A JP 15458581A JP S5856361 A JPS5856361 A JP S5856361A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- substrate
- tantalum
- film
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はマグトドロン・スパッタリング輌−によるα−
Ｔａ族の生成方法１％ＩＩｃ穎盾性の優れたα−Ｔ、Ｍ
ＩＭを生成する方法に関する・例えはタンタル薄展混成
果槍回路のタンタル４換コンデンサは一般に、繕１ｍｌ
に示す如くグレーズドアルンナ基ｆｉｌの上Ｋｇ化タン
タルｊ１２管形凧し、その上にタンタル薄膜からなる下
鄭電１３をバ声−ン形成し、さらに下部電極３の上層部
を化成してなゐ誘１体層４ｔ−介してニクロム（ＮｉＣ
ｒ）を下地層５とした金（Ａｕ）層６からなる上部電極
を配設した構成になりている０かかる薄膜（７ｅｔｒａ
ｇｏｎａｌ）構造のβ−Ｔ ａ Ｍ’ｔ 用イテｌｋ
；ｂ ４０に比べて、銹電正接、容量温度係数、絶縁抵
抗等の電気特性が優ねているため、前者を用いたものが
多く便用されるようｆなりた。しかし、スパッタ速度が
ＤＣ二極スペッタリング装装置の従来鉄筒より約１桁速
く、電子がスパッタ基板に衝突して生じるダメージを無
くすことが出来る利点を有スる◎マグネトロン・スパッ
タリング装置を用いて生成されたα−Ｔａ膜は、アルミ
ナ基板（スパッタ基板）との密着性が愚いため、通常は
酸化メンタル（ＴＪｉｇ Ｏｍ ）を下地層としてその
上に形成されている拳
不発−は上記下地層を無くして工程０＠票化ｔ―ること
であり、こＯ目的はカソードにタンタルを設はアルゴン
ガスと窪素力との混合ガスが導入されたマグネトロン・
スパッタリング装置の槽内で、摂氏１５０）を以上に加
熱した結縁基板にスパッタしてα−Ｔａｇ會生成させた
こと’ｆｔＨ像とするマクネトロン・スパッタリング装
置によるα−Ｔａｋ生戟方法ｔ−＆−供して達成される
・以下一本発明り法の一実施例に係るマグネトロン・ス
パッタリング＆ＡＭ１１の概略構成を示す第２図を用い
て本発明方法を説明する・
籐２因において電槽１１の中に電極１１１２と、図示し
ない手段で保」寺されたスパッタ基板１３及びヒータ１
４を収容して晴属され、かつ、槽１１にはスパッタ暮囲
気を形成するアルゴンガスムｒト窒息ガスＮ３を導入す
るためＯバブル１５〜１７を備えた尋人管１８と図示し
ない排気管とが設けである・電極１ｓ１２はＮｌｉを中
心１１Ｋした複数個Ｏ水久龜石１９と一タンタルくてな
るカソード（Ｉ−ゲラ＞）２０と、カソード２０を囲う
ように配にて＃Ｉｇされ、カソード２０は腹数本の象付
ねじ２３にてバッキンググレート２４に結合され、バッ
キンググレート２４は嶺数本の取付ねじ２５にて各永久
磁石１９の磁極面に結合されている・このような装置を
用いてスパッタ基板１３０表面（図示下山）にα−Ｔａ
膜を被着生成するには−まず槽１１の中にアルゴンガス
と窒素ガスＯ混合ガ＾肉えば窒素ガスの分圧が約１０〜
２０１１）を導入する０欠いで、ヒータ１４に所定電流
を流して基板１３の温度を図示しない熱電対中輻射熱に
て検出しながら摂氏１ｓｏｉ以上に加熱したのち、カソ
ード２０にマイナス数百ボルト、アノード′２２にプラ
ス数十ボルトの直流電圧を印加すると１永久磁石１９に
よる磁界とカソード２００表面に嘲直な磁界とによりて
作られる直交電磁空間Ｋｉｔｅ密胤グラズ１が発生し、
該磁界に巻きついて荷電粒子がサイクロ運動をしながら
激しぐカソード２ａをｇｌ撃しタンタル原子を叩き出す
・
その結果、カソード２０に対向する基板１３１０１１ｍ
Ｋは１ｌ−Ｔａ属がスパッタ生成されるが、前述した如
く摂氏１５０１を以上に加熱された基Ｉｌｌに直接被着
したα−Ｔａｌｌは従来方法、即ちス／（ツタリングに
伴なう自然加熱で約摂氏８０闇に−ＪＥれた酸化タンタ
ル膜（第１１１０２）ｔｆ）上に被着生成したα−Ｔａ
展と同等の密着力を具備するようｋなるＯ
以上説明した如く本発明方法によｈば、α−Ｔａの下地
層となる！−Ｔ１膜の被着及び該β−Ｔａ膜を化成して
酸化タンタル膜を生成場せる従来工程が不要と′＆１、
効果は極めて大きい。DETAILED DESCRIPTION OF THE INVENTION The present invention provides α-
Method for producing Ta group 1% IIc α-T with excellent shielding properties, M
An example of how to generate IM is that a tantalum quaternary capacitor in a tantalum thin spread hybrid spear circuit is generally
As shown in the figure, a 12kg tantalum chloride tube type kite is placed on top of a glazed alumina base film, a lower electrode 13 made of a tantalum thin film is formed on top of the glazed alumina base film, and the upper layer of the lower electrode 3 is chemically formed. Nichrome (NiC) is applied through the dielectric layer 4t.
r) has a structure in which an upper electrode consisting of a gold (Au) layer 6 with a base layer 5 is provided
gonal) structure for β-T a M't
;b Since electrical properties such as electric tangent, temperature coefficient of capacitance, and insulation resistance are superior to those of 40, products using the former have come to be more commonly used. However, the sputtering speed is about an order of magnitude higher than that of the conventional iron cylinder of DC two-pole sputtering equipment, and it has the advantage of eliminating damage caused by electrons colliding with the sputtering substrate.◎Using magnetron sputtering equipment The produced α-Ta film has poor adhesion to the alumina substrate (sputtered substrate), so it is usually formed on the alumina oxide (TJig Om) as a base layer. The purpose of this is to eliminate the process by reducing the process to zero, and the purpose of this is to install tantalum at the cathode and to use a magnetron in which a mixed gas of argon gas and silicon gas is introduced.
α-Tag was generated by sputtering on a bonding substrate heated to 150 degrees Celsius or above in a tank of a sputtering device.・Hereinafter, the method of the present invention will be explained using FIG. 2 showing the schematic configuration of magnetron sputtering & AM11 according to an embodiment of the method of the present invention. 1112, a sputtered substrate 13 and a heater 1 protected by means not shown.
The tank 11 is equipped with O bubbles 15 to 17 and an exhaust pipe (not shown) for introducing argon gas and suffocating gas N3 forming a sputtering atmosphere into the tank 11.・The electrode 1s12 includes a plurality of O Mizuku Kamaishi 19 made of Nli with a center of 11K and a cathode (I-Gela>) 20 made of one tantalum, and #Ig arranged so as to surround the cathode 20. 20 is connected to a backing grate 24 with several screws 23, and the backing grate 24 is connected to the magnetic pole surface of each permanent magnet 19 with several mounting screws 25. α-Ta is applied to the surface of the sputtered substrate 130 (as shown in the figure) using
To deposit and produce a film - First, a mixture of argon gas and nitrogen gas O is placed in the tank 11, so that the partial pressure of nitrogen gas is approximately 10 ~
2011), a predetermined current is applied to the heater 14, and the temperature of the substrate 13 is detected by radiant heat in a thermocouple (not shown), and the substrate 13 is heated to over 1 soi Celsius. When a DC voltage of several tens of volts is applied to '22, an orthogonal electromagnetic space 1 created by the magnetic field from the permanent magnet 19 and a magnetic field on the surface of the cathode 200 is generated.
The charged particles wrapped around the magnetic field move violently and hit the cathode 2a with cyclomotion, knocking out tantalum atoms. As a result, the substrate 131011m facing the cathode 20
K is produced by sputtering of 1l-Ta, but as mentioned above, α-Tall deposited directly on a group Ill heated to 1501 degrees Celsius or above is produced by the conventional method, that is, by natural heating accompanied by stumbling. α-Ta deposited on a tantalum oxide film (No. 11102 tf) heated to about 80 degrees Celsius
As explained above, according to the method of the present invention, a base layer of α-Ta is formed so as to have an adhesion force equivalent to that of an α-Ta base layer. - The conventional process of depositing a T1 film and chemically converting the β-Ta film to form a tantalum oxide film is unnecessary; &1;
The effect is extremely large.
篇１図はグレーズトアルンナ基板Ｏ上に形成１れたタン
タル薄膜コンデンサの一般的従来溝成を示す側断面−２
第２１１は本発一方法を実施するためのと一タを槽内に
設けた啼グネトー／・スパッタリング装置を概略構成で
示す側断面図である・なお、図中において１はグレーズ
ドアルンナ基板Ｓ２は酸化タンタル膜、３はタ／タルＩ
Ｉ膜から表るコンデンサの下部電極、４はタンタル誘電
体層、１１はマグネトロン・スパッタリング装量Ｏ槽、
１２はマグネトーン電極部、１３はスパッタ基板、１４
はヒータを示す・Figure 1 is a side cross section showing the typical conventional groove formation of a tantalum thin film capacitor formed on a glazed aluminum substrate O.
No. 211 is a side sectional view showing a schematic configuration of a sputtering apparatus with a sputtering device provided in a tank for implementing the present method. In the figure, 1 is a glazed substrate S2. is tantalum oxide film, 3 is tantalum I
The lower electrode of the capacitor is exposed from the I film, 4 is the tantalum dielectric layer, 11 is the magnetron sputtering loading O tank,
12 is a magnetone electrode section, 13 is a sputter substrate, 14
indicates a heater.
Claims (1)
を被噛生成せしめるＫｌａＡして、直交電磁界を利用し
カソードにはタンタルＶｒｔ＆けてなるマグネトロンス
パッタリンダ飯ｍを用い、アルゴンガスとｍＡガスとの
混合ガスが導入された８ｕ記鉄−〇惜内で摂氏１５０度
以上に加熱して絶縁基板にスパッタ・して基板と密層性
の凌れたα−Ｔａ膜を生成させ九こと１＋徴とするマグ
ネトロン・スパッタリング鉄属によるα−Ｔｉ膜生成方
法。K a -TiI a on an insulating base made of ceramic ivy etc.
The 8U iron plate was made by using orthogonal electromagnetic fields, using tantalum VRT & keratin magnetron sputtering cylinder for the cathode, and introducing a mixed gas of argon gas and mA gas. Formation of α-Ti film using magnetron sputtering iron, which is heated to over 150 degrees Celsius in a chamber and sputtered onto an insulating substrate to form an α-Ta film with superior layer density to the substrate. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15458581A JPS5856361A (en) | 1981-09-29 | 1981-09-29 | Forming method for alpha-tantalum film by magnetron- sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15458581A JPS5856361A (en) | 1981-09-29 | 1981-09-29 | Forming method for alpha-tantalum film by magnetron- sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5856361A true JPS5856361A (en) | 1983-04-04 |
Family
ID=15587411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15458581A Pending JPS5856361A (en) | 1981-09-29 | 1981-09-29 | Forming method for alpha-tantalum film by magnetron- sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856361A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5221449A (en) * | 1990-10-26 | 1993-06-22 | International Business Machines Corporation | Method of making Alpha-Ta thin films |
| EP0582387B1 (en) * | 1992-08-05 | 1999-05-26 | Sharp Kabushiki Kaisha | Metallic wiring board and method for producing the same |
| US6458255B2 (en) * | 1998-09-24 | 2002-10-01 | Applied Materials, Inc. | Ultra-low resistivity tantalum films and methods for their deposition |
| US6488823B1 (en) * | 1997-05-27 | 2002-12-03 | Applied Materials, Inc. | Stress tunable tantalum and tantalum nitride films |
| WO2002011187A3 (en) * | 2000-07-28 | 2002-12-19 | Applied Materials Inc | Method and apparatus for depositing a tantalum-containing layer on a substrate |
| US6911124B2 (en) | 1998-09-24 | 2005-06-28 | Applied Materials, Inc. | Method of depositing a TaN seed layer |
| KR100622844B1 (en) | 2004-10-13 | 2006-09-19 | 주식회사 에이디피엔지니어링 | Plasma processing apparatus |
| CN113235060A (en) * | 2021-05-12 | 2021-08-10 | 中国兵器工业第五九研究所 | Preparation method of all-alpha-phase tantalum coating |
-
1981
- 1981-09-29 JP JP15458581A patent/JPS5856361A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5221449A (en) * | 1990-10-26 | 1993-06-22 | International Business Machines Corporation | Method of making Alpha-Ta thin films |
| EP0582387B1 (en) * | 1992-08-05 | 1999-05-26 | Sharp Kabushiki Kaisha | Metallic wiring board and method for producing the same |
| US6488823B1 (en) * | 1997-05-27 | 2002-12-03 | Applied Materials, Inc. | Stress tunable tantalum and tantalum nitride films |
| US6458255B2 (en) * | 1998-09-24 | 2002-10-01 | Applied Materials, Inc. | Ultra-low resistivity tantalum films and methods for their deposition |
| US6911124B2 (en) | 1998-09-24 | 2005-06-28 | Applied Materials, Inc. | Method of depositing a TaN seed layer |
| WO2002011187A3 (en) * | 2000-07-28 | 2002-12-19 | Applied Materials Inc | Method and apparatus for depositing a tantalum-containing layer on a substrate |
| US6627050B2 (en) | 2000-07-28 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for depositing a tantalum-containing layer on a substrate |
| KR100622844B1 (en) | 2004-10-13 | 2006-09-19 | 주식회사 에이디피엔지니어링 | Plasma processing apparatus |
| CN113235060A (en) * | 2021-05-12 | 2021-08-10 | 中国兵器工业第五九研究所 | Preparation method of all-alpha-phase tantalum coating |
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