JPS5837548A - Analysis of ca in ge-ga alloy - Google Patents
Analysis of ca in ge-ga alloyInfo
- Publication number
- JPS5837548A JPS5837548A JP13557081A JP13557081A JPS5837548A JP S5837548 A JPS5837548 A JP S5837548A JP 13557081 A JP13557081 A JP 13557081A JP 13557081 A JP13557081 A JP 13557081A JP S5837548 A JPS5837548 A JP S5837548A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- solution
- alloy
- sample solution
- plasma emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
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- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、Ｇｅ（ケルマニウム）−Ｇａ（ガリウム）合
金中のＧｍの分析方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for analyzing Gm in a Ge (kermanium)-Ga (gallium) alloy.
半導体素子の製造工程中においては、半導体素子の原料
のひとつでおるＧ ＠−Ｇａ合金中の０１の正確且つ迅
速な分析が必要とされる。従来、Ｇｏ−Ｇａ合金中のＧ
ａの分析方法として、一般的な比色法が用いられていた
が、共存成分から０１の分離が必要であるため、操作が
煩雑になるうえに分析時間も多くを要していた。During the manufacturing process of semiconductor devices, accurate and rapid analysis of 01 in G@-Ga alloy, which is one of the raw materials for semiconductor devices, is required. Conventionally, G in Go-Ga alloy
A general colorimetric method has been used as an analysis method for a, but since it is necessary to separate 01 from coexisting components, the operation is complicated and the analysis takes a long time.
ここにおいて、本発明は、Ｇ・−０１合金中Ｃ）Ｇａの
分析を迅速に、且つ精度臭く定量分析することが可能な
分析方法を提供しようとするものである。Here, the present invention seeks to provide an analysis method that enables quick and highly accurate quantitative analysis of C) Ga in the G-01 alloy.
本発明に係る分析方法は、微粉砕した試料（Ｇ・−Ｇａ
合金）に、水酸化ナトＩＪウム水溶液及び過酸化水素水
を加え、加温溶解後煮沸して放冷し、さらに塩酸を加え
て酸性とした後、水で希釈して容量−足の試料溶液をつ
（ｐ、この試料溶液中のＧａをプラズマ発光分析法によ
って定量分析することを％做としている。また、検量線
用標準溶液には、水酸化ナトＩＪウム水溶液及び塩酸を
試料溶液と同濃度となるように添加したものを使用する
。The analysis method according to the present invention uses a finely ground sample (G・-Ga
Add a sodium hydroxide aqueous solution and a hydrogen peroxide solution to the alloy), heat and dissolve, boil and let cool, then add hydrochloric acid to make it acidic, dilute with water and make a volumetric sample solution. It is assumed that Ga in this sample solution is quantitatively analyzed by plasma emission spectrometry.In addition, the standard solution for the calibration curve contains sodium hydroxide aqueous solution and hydrochloric acid in the same manner as the sample solution. Use the one added to the desired concentration.
第１図は、本発明の分析方法における試料層液作成の一
例を示すフローシート、第２図は検量線用標準溶液作成
の一力を示すフローシートである。FIG. 1 is a flow sheet showing an example of preparing a sample layer solution in the analysis method of the present invention, and FIG. 2 is a flow sheet showing an example of preparing a standard solution for a calibration curve.
Ｇ・−Ｇａ合金を粒状試料のｔま溶解するには、従来よ
シ、フッ化水素酸及び硝酸で処通する方法がある。しか
しながら、フッ化水素酸はガラスを溶解する性質がある
ために、ガラス製の実験器具あるいは部品を使用する場
合は、このフッ化水素酸を除去するための何んらかの処
理をする必要があ如、その為の操作が増え、時間も多く
必要とする。それ故に、本発明においては、第１図フロ
ーシートに示すように、微粉砕した試料を秤量後、これ
に５ ％ ＮａＯＨ１０ｓ／ 及び３０５ｋ Ｈ＊Ｏ
ｘ ３ ｍを加えて加温溶解し、煮沸、放冷して（１＋
１）ＨＣｔ４ｇｊを加え、酸性の試料溶液をつくる方法
とした。ここで、 ＨＣｌの添加は、ガラス器具からの
微量成分の混入の防止と、プラズマ発光分析装置の使用
に際し、ガクス製ネブライザーの採暖及び試料溶液の粘
性を低下させて感度を向上させることを目的としている
。最後に水を加えて希釈し、１００ＷＬｌ一定とし、こ
の試料溶液について、２９４４′ｋにおけるＧａの発光
強度をプラズマ発光分析装置によって測定し、定量分析
を行う。A conventional method for dissolving the G.--Ga alloy in a granular sample is treatment with hydrofluoric acid and nitric acid. However, since hydrofluoric acid has the property of dissolving glass, it is necessary to perform some kind of treatment to remove this hydrofluoric acid when using glass laboratory equipment or parts. Unfortunately, this requires more operations and more time. Therefore, in the present invention, as shown in the flow sheet of FIG. 1, after weighing a finely ground sample, 5% NaOH 10s/
Add 3 m of
1) HCt4gj was added to create an acidic sample solution. Here, the addition of HCl is intended to prevent trace components from being mixed in from glassware, and to improve sensitivity by reducing the heating of the GAX nebulizer and the viscosity of the sample solution when using the plasma emission spectrometer. There is. Finally, water is added to dilute the sample solution to a constant value of 100 WLl, and the luminescence intensity of Ga at 2944'k is measured using a plasma emission spectrometer for this sample solution to perform quantitative analysis.
また、検量線用標準溶液は、第２図フローシートに示す
ようにＧａ Ｏ〜５１１ｆを標準溶液よυ分堆し、これ
に５％ＮａＯＨ１ＯＮ１． （１＋ １ ）ＨＣｔ４Ｉ
ＩＪ（試料溶液と同濃度）添加し、ル０を加えて希釈し
１００ｗＪ一定としたものを使用する。The standard solution for the calibration curve was prepared by depositing GaO~511f in υ minutes on the standard solution as shown in the flow sheet of Figure 2, and adding 5% NaOH1ON1. (1+1)HCt4I
Add IJ (same concentration as the sample solution) and dilute it by adding Lu 0 to make it constant at 100 wJ.
第１表は、本発明の分析方法において、溶解条件の検討
結果をフッカ水素酸と硝酸で処理する方法（イ参照）と
比較して示したものである。Table 1 shows the results of examining the dissolution conditions in the analysis method of the present invention in comparison with the method of treatment with hydrofluoric acid and nitric acid (see A).
第 １ 表
いずれの条件においても、試料の溶解が可能であること
がわかった。It was found that the sample could be dissolved under any of the conditions shown in Table 1.
第２表は、試料溶解に使用した過酸化水素の影響を調査
した結果である。煮沸の操作によって、過酸化水素の影
響がはとんどなくなることがわかる。Table 2 shows the results of investigating the influence of hydrogen peroxide used in sample dissolution. It can be seen that the effects of hydrogen peroxide are almost completely eliminated by boiling.
第 ２ 表
第３ｆ１！は、Ｇ・共存の影響を調べた実験結果でおる
。Table 2 3f1! These are the results of an experiment investigating the influence of G coexistence.
第 ６ 表 注１） 試料溶液中では１１０００ｐｐの濃度となる。Table 6 Note 1) The concentration in the sample solution is 11,000 pp.
この実験結果から、発光分析の際、Ｇ・１０００ ｐｐ
ｍの共存の影響な（’ Ｇａの分析ができることを確認
し良。From this experimental result, G・1000 pp
The effect of the coexistence of m (' It is good to confirm that it is possible to analyze Ga.
以上説明したように、本発明に係る分析方法によれば、
Ｇ・−Ｇｍ合金中の０１を迅速に且つ精度良く定量分析
することができる。分析の精度は、合金中のＧａ含有率
として０．０１６％である。また、フッ化水素酸を使用
しないので、使用器具の制限もなく、試料溶液の操作が
簡単である等の特長を工ある０
本発明に係る分析方法は、Ｇ・−〇ｍ合金の品質管理や
受入れ検査、半導体素子の製造に際してのＧｍ拡散工程
の管理に利用して、極めて有効である。As explained above, according to the analysis method according to the present invention,
01 in the G.-Gm alloy can be quantitatively analyzed quickly and accurately. The accuracy of the analysis is 0.016% as the Ga content in the alloy. In addition, since hydrofluoric acid is not used, there are no restrictions on the equipment used, and the analysis method according to the present invention has advantages such as easy manipulation of sample solutions. It is extremely effective when used for control of Gm diffusion process during acceptance inspection and manufacturing of semiconductor devices.
第１図は本発明の分析方法における試料溶液作成のフロ
ーシート図、第２医紘検量線用標準溶液作成のフローシ
ート図である。
代理人 弁理士 佐 藤 正 年
第１図
１００ ｒｒＬｔ −Ｅ
第２図
１００ｒｒ／ニーにFIG. 1 is a flow sheet diagram for preparing a sample solution in the analysis method of the present invention, and a flow sheet diagram for preparing a standard solution for a second medical calibration curve. Agent Patent Attorney Tadashi Sato Figure 1 100rrLt -E Figure 2 100rr/knee
Claims (1)
び過酸化水素水を加え、加温溶解後煮沸して放冷し、さ
らに塩酸を加えて酸性とした後水で希釈して容量−定の
試料溶液をつ〈シ、この試料溶液中のＧａをプラズマ発
光分析法によって定量分析をすることを特徴とするＧ・
−Ｇａ合金中のＧａの分析方法。(1) Add an aqueous sodium hydroxide solution and a hydrogen peroxide solution to the finely ground sample, heat to dissolve, boil and let cool, then add hydrochloric acid to make it acidic, then dilute with water to prepare a sample with a constant volume. A method for preparing a sample solution, which is characterized in that Ga in the sample solution is quantitatively analyzed by plasma emission spectrometry.
-A method for analyzing Ga in a Ga alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13557081A JPS5837548A (en) | 1981-08-31 | 1981-08-31 | Analysis of ca in ge-ga alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13557081A JPS5837548A (en) | 1981-08-31 | 1981-08-31 | Analysis of ca in ge-ga alloy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5837548A true JPS5837548A (en) | 1983-03-04 |
| JPS622259B2 JPS622259B2 (en) | 1987-01-19 |
Family
ID=15154897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13557081A Granted JPS5837548A (en) | 1981-08-31 | 1981-08-31 | Analysis of ca in ge-ga alloy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5837548A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60205586A (en) * | 1984-03-30 | 1985-10-17 | 日本電気株式会社 | Driving system for compound discharge display panel |
| JPS6161043A (en) * | 1984-09-03 | 1986-03-28 | Seiko Instr & Electronics Ltd | Analyzing device for plating liquid |
| JP2009085943A (en) * | 2007-09-14 | 2009-04-23 | Sumitomo Electric Ind Ltd | Icp emission spectral analysis method |
| CN102778379A (en) * | 2012-08-09 | 2012-11-14 | 江苏省产品质量监督检验研究院 | Method for preparing ferrovanadium alloy fusing sample for X-ray spectrofluorimetry |
| CN103308509A (en) * | 2013-06-07 | 2013-09-18 | 武钢集团昆明钢铁股份有限公司 | Method for measuring gallium and scandium contents in blast furnace smoke dust |
-
1981
- 1981-08-31 JP JP13557081A patent/JPS5837548A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60205586A (en) * | 1984-03-30 | 1985-10-17 | 日本電気株式会社 | Driving system for compound discharge display panel |
| JPS6161043A (en) * | 1984-09-03 | 1986-03-28 | Seiko Instr & Electronics Ltd | Analyzing device for plating liquid |
| JP2009085943A (en) * | 2007-09-14 | 2009-04-23 | Sumitomo Electric Ind Ltd | Icp emission spectral analysis method |
| CN102778379A (en) * | 2012-08-09 | 2012-11-14 | 江苏省产品质量监督检验研究院 | Method for preparing ferrovanadium alloy fusing sample for X-ray spectrofluorimetry |
| CN103308509A (en) * | 2013-06-07 | 2013-09-18 | 武钢集团昆明钢铁股份有限公司 | Method for measuring gallium and scandium contents in blast furnace smoke dust |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS622259B2 (en) | 1987-01-19 |
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