JPS5835920A - Vacuum evaporator - Google Patents

Vacuum evaporator

Info

Publication number
JPS5835920A
JPS5835920A JP13427881A JP13427881A JPS5835920A JP S5835920 A JPS5835920 A JP S5835920A JP 13427881 A JP13427881 A JP 13427881A JP 13427881 A JP13427881 A JP 13427881A JP S5835920 A JPS5835920 A JP S5835920A
Authority
JP
Japan
Prior art keywords
holder
evaporation source
particles
shielding plates
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13427881A
Other languages
Japanese (ja)
Inventor
Masaru Kurosawa
黒沢　賢
Kunihiro Arai
邦博 荒井
Yoshiaki Mimura
三村　義昭
Fumihiko Yanagawa
柳川　文彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13427881A priority Critical patent/JPS5835920A/en
Publication of JPS5835920A publication Critical patent/JPS5835920A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Abstract

PURPOSE:To prevent scatter and injection of evaporating particles to a resist side wall, and to enhance the attachment coefficient of the particles to wafers by a method wherein shielding plates of the plural sheets having the opening part corresponding to the statically estimated angles viewing a sample holder from an evaporation source are provided in a gap between the evaporation source and the holder, and the holder and the shielding plates are respectively cooled. CONSTITUTION:The shielding plates 61-65 of the plural sheets are arranged in parallel mutually interposing the interval of 5cm in the gap between the evaporation source 4 and the sample holder 5 facing mutually interposing the interval of 50cm between them. At this time, the circular opening part corresponding to the solid angles alpha estimated viewing the holder 5 from the evaporation source 4 is provided in each shielding plate, and the evaporating current flowing from the evaporation source 4 toward the holder 5 is surrounded with the opening part. The vacuum evaporator is constituted by this way, the Si wafers 51, 52 of the plural sheets provided with resist patterns are adhered on the lower face of the holder 5, and the evaporation source 4 is provided in parallel having the deviation within 13 deg. in relation to the side wall of resist patterns. Accordingly the evaporating particles corresponding to the solid angles alpha only are made to reach the wafers 51, 52 and at the same time, the holder and the shielding plates are cooled at -60 deg.C or less using liquid nitrogen.

Description

【発明の詳細な説明】 本発明社、リフトオフ法によって微細な集積回路のバタ
ンを形成する際に間亀となる１バリ”の発生を抑制し、
良質なりフトオフバタンを形成するための真空蒸着装置
に関するものである。[Detailed Description of the Invention] The present invention suppresses the occurrence of 1 burr which becomes a gap when forming a fine integrated circuit batten by a lift-off method,
This invention relates to a vacuum evaporation device for forming high-quality foot-off panels.

リフトオフ法を用いてバタンを形成する場合、第１図ム
に示すように、基板１上に形成されたレジスト膜２でｍ
まれたパタン領域にレジスト膜をマスクにして、蒸着膜
３１管形成した後、これを７七トン等の有機溶媒中に浸
せきして、レジスト膜２及びその上に形成され九蒸着膜
３２を除去することＫよって所望のバタン３１を得るこ
とが行われている。When forming a batten using the lift-off method, as shown in FIG.
Using the resist film as a mask, a vapor deposited film 31 tube is formed on the patterned area, and then this is immersed in an organic solvent such as 77 tons to remove the resist film 2 and the nine vapor deposited film 32 formed thereon. The desired button 31 is obtained by performing the steps K.

しかしながら、真空蒸着によって薄膜を得る際、蒸着粒
子の飛程、レジストステンシルマスクの断面構造によっ
ては、レジスト膜２の側壁部に付着層３３が形成される
。この付着層の一部分は有機溶媒によってレジメ）３９
２を除去する際、第１図ＢＫ示すように、所定の蒸着膜
パタン３１以外の部分にパリ３３ａ　、　８３ａ　、　
８３ａとして残る。その結果、多層配鐘時に配線パタン
か断線し九シ、短絡する間亀があった。However, when a thin film is obtained by vacuum evaporation, an adhesion layer 33 is formed on the side wall portion of the resist film 2 depending on the range of the evaporated particles and the cross-sectional structure of the resist stencil mask. A part of this adhesion layer is coated with an organic solvent (regimen) 39
2, as shown in FIG.
It remains as 83a. As a result, there were many disconnections and short circuits in the wiring pattern during multi-layer bell distribution.

このため、十分なオーバーハングをもった断面構造を持
つレジストステンシルマスクを採用シたり、蒸着粒子を
レジスト側壁に対し平行に入射するように工夫したシし
て、パリの発生を抑制する試みがなされていた。For this reason, attempts have been made to suppress the occurrence of paris by using a resist stencil mask with a cross-sectional structure with sufficient overhang, or by making the vapor deposition particles incident parallel to the resist side walls. was.

しかしながら、上述のような工夫を施したとしても、パ
リの発生を完全に抑止することは困難であった。これは
、真空蒸着装置内で、装置内壁中装置治具等で散乱され
た指向性のない蒸着粒子、試料表面で散乱された蒸着粒
子がレジストの側壁に付着するためである。蒸着粒子の
散乱確率は大きく、例えば型温における鉛、および−酸
化ケイ素の散乱確率はそれぞれ０．２　、０．３にも及
ぶ。従って、通常の真空蒸着装置を用いてリフトオフパ
タンを形成する場合、蒸着粒子は散乱確率に従い、散乱
され、試料に付着し、パリが発生するという欠点を有し
ていた。However, even with the above-mentioned measures, it has been difficult to completely prevent the occurrence of Paris. This is because, in the vacuum evaporation apparatus, non-directional evaporation particles scattered by equipment jigs, etc. in the inner walls of the apparatus, and evaporation particles scattered on the sample surface adhere to the side walls of the resist. The scattering probability of deposited particles is large; for example, the scattering probability of lead and -silicon oxide at the mold temperature is as high as 0.2 and 0.3, respectively. Therefore, when a lift-off pattern is formed using a conventional vacuum evaporation apparatus, the evaporated particles are scattered according to the scattering probability and adhere to the sample, resulting in generation of paris.

本発明は、これらの欠点を解決するため、真空蒸着装置
内部に遮蔽板を設け、蒸着粒子の散乱、レジスト側壁へ
の入射を防止し、また、試料冷却、遮蔽板等の冷却を行
うことによって蒸着粒子の付着係数を高め、パリを抑制
しうる装置を提供することを目的とするものである。In order to solve these drawbacks, the present invention provides a shielding plate inside the vacuum evaporation apparatus to prevent deposition particles from scattering and entering the resist side wall, and also by cooling the sample and the shielding plate. The object of the present invention is to provide an apparatus capable of increasing the adhesion coefficient of vapor-deposited particles and suppressing the formation of particles.

本発明を概説すれば、本発明は次の２発明からなる。To summarize the present invention, the present invention consists of the following two inventions.

（１）蒸着源と試料ホルダの間に、蒸着源から試料ホル
ダを見込んだ立体周分の開口部を有する遮蔽板を内部に
設置した真空蒸着装置を用い、バタン形成を行うこと。(1) Perform batten formation using a vacuum evaporation device in which a shielding plate is installed between the evaporation source and the sample holder, and has a shielding plate having an opening for the three-dimensional circumference looking from the evaporation source to the sample holder.

（２）装置内に設置された試料基板ホルダ、遮蔽板等の
内部治具を一６０６Ｃ以下の低温に冷却した真空蒸着装
置を用いバタン形成を行うこと。(2) Perform baton formation using a vacuum evaporation device in which internal jigs such as a sample substrate holder and a shielding plate installed in the device are cooled to a low temperature of -606C or less.

以下添付図面に従って本発明の詳細な説明する。The present invention will be described in detail below with reference to the accompanying drawings.

蒸着装置内壁や試料基板等で散乱された指向性のない蒸
着粒子がレジストの側壁に付着し、その付着物がパリの
原因となる。従って、パリを抑止するには、散乱粒子が
試料に入射する確率を抑えること、散乱粒子が発生する
確率を抑えることが必要である。Non-directional vapor deposition particles scattered by the inner wall of the vapor deposition apparatus, the sample substrate, etc. adhere to the side walls of the resist, and this adhesion causes flash. Therefore, in order to suppress Paris, it is necessary to suppress the probability that scattering particles will enter the sample and the probability that scattering particles will occur.

散乱粒子が試料に入射する確率を抑えるには、実際に蒸
着にあずかる立体周分から飛んでくる蒸着粒子だけを受
は入れ、他の蒸着粒子を遮蔽するような値蔽物を蒸着源
と試料基板ホルダの間に設置するのが有効である。また
、散乱確率を抑えるには散乱の原因となる試料ホルダ等
の装置内部治具を冷却し、粒子の付着係数を増加させる
ことが有効である。To reduce the probability that scattered particles will enter the sample, only the deposition particles flying from the three-dimensional circumference that will actually participate in the deposition are accepted, and a shielding material that blocks other deposition particles is placed between the deposition source and the sample substrate. It is effective to install it between holders. Furthermore, in order to suppress the probability of scattering, it is effective to cool the internal jigs of the apparatus, such as the sample holder, which cause scattering, and to increase the adhesion coefficient of particles.

第２図ムは本発明の実施例１である。この実施例では蒸
着Ｏ１４と試料ホルダ５の間（５０ｍ）に５枚の遮蔽板
６１．６２．６３．６４．６５をｓｍ間隔に設け、かつ
各遮蔽板は蒸着源４から試料ホルダ５を見込んだ立体角
α相当分の円状の開口部を持つ構造を有する。また基板
ホルダ５には、所望のレジストパタン２を形成した試料
（シリコンウェハ）５１．５２が装着され、レジストパ
タン２の側嫌に対し、蒸着源４は１３度以内の偏差をも
って平行に設置されている。この構造を有するため、広
角度に広がった蒸着粒子の内、立体角α分の蒸着粒子の
みが試料基板に到達し得、それ以外の蒸着粒子は遮蔽板
で遮蔽され、散乱の原因となる粒子の絶対数を減少せし
める。また同時に遮蔽板の設置によシ内部治具で散乱さ
れる確率が激減し、かつ散乱粒子自体も遮蔽板で遮蔽さ
れる。FIG. 2 shows Example 1 of the present invention. In this example, five shielding plates 61, 62, 63, 64, 65 are provided at sm intervals between the evaporation source 4 and the sample holder 5 (50m), and each shielding plate is arranged in a direction from the evaporation source 4 to the sample holder 5. It has a structure with a circular opening corresponding to the solid angle α. Further, a sample (silicon wafer) 51,52 on which a desired resist pattern 2 has been formed is mounted on the substrate holder 5, and the evaporation source 4 is installed parallel to the side of the resist pattern 2 with a deviation within 13 degrees. ing. Because of this structure, among the deposited particles spread over a wide angle, only the deposited particles corresponding to the solid angle α can reach the sample substrate, and the other deposited particles are shielded by the shielding plate, causing particles that cause scattering. decrease the absolute number of At the same time, by installing the shielding plate, the probability of scattering by the internal jig is drastically reduced, and the scattered particles themselves are also shielded by the shielding plate.

第３図ムは従来法により形成した・円側の顕微鏡写真（
銅蒸着膜）で、第３図Ｂ（銅蒸着膜）は本実施例１で実
現したバタン例である。第３図ムで見られるパタンａの
周辺部のパリｂは第３図Ｂの場合著しく減少しているこ
とがわかる。本実施例では５枚の遮蔽板を設置したが、
２枚でも同様の効果が得られた。Figure 3 is a micrograph of the circular side formed by the conventional method (
FIG. 3B (copper vapor deposited film) is an example of the baton realized in Example 1. It can be seen that the paris b at the periphery of pattern a seen in FIG. 3 is significantly reduced in FIG. 3B. In this example, five shielding plates were installed.
A similar effect was obtained with two sheets.

第２図Ｂに実施例２を示す。実施例２では、実施例１で
の効果を増幅するために、内部治具を冷却する機構を加
えたものである。試料基板ホルダ５は導入ロア、８から
液体窒素を導入することによシー９０”Ｃに保持した。Example 2 is shown in FIG. 2B. In the second embodiment, in order to amplify the effect of the first embodiment, a mechanism for cooling the internal jig is added. The sample substrate holder 5 was held at sea 90''C by introducing liquid nitrogen from the introduction lower 8.

また遮蔽板６１　、６２　。Also, shielding plates 61 and 62.

６３　．６４．６５は導入口９，１０から液体窒素を導
入することＫより、液体窒素だめ１１に液体窒素を貯え
、遮蔽板の端部を支持する支持円柱】２を通じ熱伝導に
よって一９０＠Ｃに保持した。このため、蒸着粒子の通
路にある内部治具はすべて冷却されており、治具に衝突
する粒子のほとんどが付着し、散乱されない。また試料
基板ホルダ５は冷却されているので基板上での散乱も１
％以下である。第３図Ｃはこの実施例２で形成したバタ
ン例（銅蒸着膜）である。第３図Ａ、Ｂに比し、パリは
認められず、良好なバタン形成が可能であることがわか
る。なお冷却温度は基板ホルダ、！１蔽板とも一６０°
Ｃ以下であれば３−以下の散乱に押えられ有効であった
。63. 64.65 introduces liquid nitrogen from the inlet ports 9 and 10. From K, liquid nitrogen is stored in the liquid nitrogen reservoir 11, and the temperature is reduced to -90@C by heat conduction through the support cylinder 2 which supports the end of the shielding plate. held. Therefore, all of the internal jigs in the path of the vapor-deposited particles are cooled, and most of the particles that collide with the jigs stick to the jigs and are not scattered. In addition, since the sample substrate holder 5 is cooled, scattering on the substrate is also reduced to 1.
% or less. FIG. 3C shows an example of a batten (copper deposited film) formed in Example 2. Compared to FIGS. 3A and 3B, no cracks were observed, indicating that good batten formation was possible. Note that the cooling temperature is the board holder! 1 shielding plate: 60°
If it was less than C, the scattering was suppressed to 3- or less and was effective.

第４図は本発明装置の効果を説明するための実験結果で
ある。第４図ムは効果を確認するための試料の概観図で
、基板１３からｄだけ離した所に基板屋根１４を置き、
蒸着膜１５を形成した時、散乱によって蒸着粒子がどの
ようＫまわシ込むかを調べた。第４図Ｂは一酸化ケイ素
について調べた結果で、基板屋根へのまわシ込み量を測
定し九結果である。この量は試料基板での散乱量を示し
ている。曲線ムは室温蒸着でかつ汎用の真空蒸着装置で
のまわシ込み量測定結果、曲ａＢは本実施例１、曲線Ｏ
は本実施例２でのまわシ込み量測定結果である。本発明
では、蒸直粒子の試料基板上での散乱が抑制されること
がわかる。第４図Ｃは基板へのまわシ込み量を測定した
結果である。この量は装置内部治具等からの散乱量を示
している。FIG. 4 shows experimental results for explaining the effects of the device of the present invention. Figure 4 is an overview of a sample for confirming the effect.The substrate roof 14 is placed at a distance d from the substrate 13.
When the deposited film 15 was formed, how the deposited particles penetrated by scattering was investigated. FIG. 4B shows the results of an investigation on silicon monoxide, and the amount of penetration into the roof of the substrate was measured. This amount indicates the amount of scattering on the sample substrate. Curve M is the result of measuring the amount of indentation during room temperature evaporation using a general-purpose vacuum evaporation device, curve aB is the result of this Example 1, and curve O is
These are the results of measuring the amount of indentation in Example 2. It can be seen that in the present invention, scattering of the steamed particles on the sample substrate is suppressed. FIG. 4C shows the results of measuring the amount of indentation into the substrate. This amount indicates the amount of scattering from jigs and the like inside the device.

Ａ′は室温蒸着でかつ汎用の真空蒸着装置でのまわシ込
みｔｉｌｌ定結果、曲Ｉ！Ｂは本実施例１、曲ＩＩＯ′
祉本実施例２でのまわシ込み量測定結果である。A' is the result of evaporation at room temperature using a general-purpose vacuum evaporation device, and song I! B is Example 1, song IIO'
This is the result of measuring the amount of indentation in Example 2.

本発明では、装置内部治具等からの散乱粒子の入射が抑
制されていることがわかる。It can be seen that in the present invention, the incidence of scattered particles from the internal jig and the like of the apparatus is suppressed.

以上説明したように１５本発明においては蒸着粒子の真
空蒸着装置内での散乱、試料基板表面での散乱をおさえ
ることが可能となシ、散乱粒子が原因となるパリの発生
を抑制することが可能となる利点を有する。As explained above, in the present invention, it is possible to suppress the scattering of vapor deposited particles within the vacuum evaporation apparatus and the scattering on the surface of the sample substrate, and it is possible to suppress the generation of paris caused by the scattered particles. It has the advantage of being possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図ム、Ｂは基板上に形成されたレジスト膜をマスク
にして蒸着膜を形成した状態を示す断面図、第２図は本
発明方法を実現するために用いた蒸着装置の構成を示す
断面図でＡは第１実施例、Ｂは第２実施例を示す。第３
図Ａ、Ｂ、○はリフトオフバタン形成の顕微鏡写真、第
４図Ａ、Ｂ。 ３３・・・側壁付着層、３３ａ　、　３３ａ　、　３３
ａ・・・パリ、５・・・試Ｒ基板ホルダ、５１．５２・
・・シリコンウェハ、６１　．６２．６３．６４．６５
・・・遮蔽板、７，８・・・液体窒素導入口、９．１０
・・・液体窒素導入口、１１・・・液体窒素だめ、１２
・・・支持円柱、１３・・・基板、１４・・・基板屋根
、１５・・・蒸着膜特許出願人 ７１図 （Ａ） Ｊ （Ｂ） 不２図 （Ａ） （Ｂ） 不４図 χん χん 手続補正書（方式） ％式％ ２、発明の名称 真空蒸着装置 ３、補正ｔする者 事件との関係　　特許出願人 名　称　　（４２２）８不電信電話公社４、代理人〒１
６０ 昭和５７年１月５日（発送日照、１−ＬＩ５７年１月２
６日〕６、輪圧の対象 １、第３図を参考写真とする。 ２．第４図ｔ−第３図に訂正する。 ３、　　＃３Ａ細書＠５頁第１８行目より第６頁第４行
目の「第３凶Ａ−−−が得られたｏＪｔ削除し１次文を
挿入する。 ［５枚の遮蔽板音用いて実施した結果、不発明によれば
第１図（８）において見られるバ！Ｊ　３３　ａ　、　
３３ａ’。 ３３ａ“の発生は昭められなかった。」４、明細書第６
負第１８　、１９行目のＵ第３図Ｃ−−−Ａ、Ｂに比し
」會次のように訂正する。 １゛この実施例２で形成したバタンは、実施９′ｌｌｌ
に比べ、」 ５、　明細書第７頁第４付目、５行目、９行目、　１６
行目の「第４図」會１第３図」と訂正する。 ６、明細書第８）ｌ第１４行目、　１５行目の１第３図
Ａ。 Ｂ、Ｃ−−一第４図Ｊ　’ｔ−１−第３図」と訂正する
。 ；ｒ■ χん χんFigures 1 and 1B are cross-sectional views showing a state in which a vapor deposited film is formed using a resist film formed on a substrate as a mask, and Figure 2 shows the configuration of a vapor deposition apparatus used to realize the method of the present invention. In the cross-sectional views, A shows the first embodiment, and B shows the second embodiment. Third
Figures A, B, and ○ are micrographs of lift-off batten formation, and Figure 4 A, B. 33... Side wall adhesion layer, 33a, 33a, 33
a... Paris, 5... Trial R board holder, 51.52.
...Silicon wafer, 61. 62.63.64.65
... Shielding plate, 7, 8 ... Liquid nitrogen inlet, 9.10
...Liquid nitrogen inlet, 11...Liquid nitrogen reservoir, 12
...Support cylinder, 13...Substrate, 14...Substrate roof, 15...Vapour-deposited film patent applicant 71 Figure (A) J (B) Figure 2 (A) (B) Figure 4 χ Procedural amendment (method) % formula % 2. Name of the invention Vacuum evaporation device 3. Relationship with the case of the person making the amendment Name of patent applicant (422) 8 Telegraph and Telephone Public Corporation 4. Agent 〒1
60 January 5, 1981 (Shipping Niksho, 1-LI January 2, 1982)
6th] 6. Use the wheel pressure target 1 and Figure 3 as reference photos. 2. Figure 4 t - Corrected to Figure 3. 3. #3A detailed book @ page 5, line 18 to page 6, line 4, ``The third bad A--- was obtained oJt is deleted and the first sentence is inserted. [5 sheets of shielding board sound According to the invention, as a result of carrying out the experiment using B!J 33 a , which can be seen in FIG. 1 (8),
33a'. 33a "occurrence has not been stopped." 4, Specification No. 6
Negative 18th and 19th lines U Figure 3 C---Compared to A and B, it is corrected as follows. 1゛The baton formed in this Example 2 is the same as that in Example 9'llll.
5. Specification, page 7, 4th line, 5th line, 9th line, 16
Correct the line ``Figure 4'' to read ``Figure 1 Figure 3''. 6. Specification No. 8) l Lines 14 and 15 1 Figure 3 A. B,C--1-Figure 4 J 't-1-Figure 3'' is corrected. ；r■

Claims (1)

【特許請求の範囲】 （１１１１着源と試料ホルダの間に、蒸着源から試料ホ
ルダへの見込み貴公の開口部を有する複数枚の遮蔽板を
設置したことを特徴とする真９蒸着装置。 （２）蒸着源と試料ホルダの関Ｋ、蒸着源から試料ホル
ダへの見込み貴公の開口部を有する複数枚の遮蔽板を設
置すると共に、前記の試料ホルダ及び遮蔽板の夫々を冷
却するための冷却装置を具備せしめることを特徴とする
真空蒸着装置。[Claims] (1111 A true 9 evaporation apparatus characterized in that a plurality of shielding plates having openings extending from the evaporation source to the sample holder are installed between the 1111 deposition source and the sample holder. 2) Installing a plurality of shielding plates having openings between the vapor deposition source and the sample holder, and a hole extending from the vapor deposition source to the sample holder, and cooling each of the sample holder and the shielding plate. 1. A vacuum evaporation device comprising:
JP13427881A 1981-08-28 1981-08-28 Vacuum evaporator Pending JPS5835920A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13427881A JPS5835920A (en) 1981-08-28 1981-08-28 Vacuum evaporator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13427881A JPS5835920A (en) 1981-08-28 1981-08-28 Vacuum evaporator

Publications (1)

Publication Number Publication Date
JPS5835920A true JPS5835920A (en) 1983-03-02

Family

ID=15124537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13427881A Pending JPS5835920A (en) 1981-08-28 1981-08-28 Vacuum evaporator

Country Status (1)

Country Link
JP (1) JPS5835920A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111164234A (en) * 2017-08-02 2020-05-15 欧瑞康表面处理解决方案股份公司普费菲孔 Coating device for efficient low-temperature coating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111164234A (en) * 2017-08-02 2020-05-15 欧瑞康表面处理解决方案股份公司普费菲孔 Coating device for efficient low-temperature coating

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