JPS5834607A - 半導体の洩れ電流を補償する回路及び方法 - Google Patents

半導体の洩れ電流を補償する回路及び方法

Info

Publication number
JPS5834607A
JPS5834607A JP57111419A JP11141982A JPS5834607A JP S5834607 A JPS5834607 A JP S5834607A JP 57111419 A JP57111419 A JP 57111419A JP 11141982 A JP11141982 A JP 11141982A JP S5834607 A JPS5834607 A JP S5834607A
Authority
JP
Japan
Prior art keywords
leakage current
temperature
current
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57111419A
Other languages
English (en)
Japanese (ja)
Inventor
ポ−ル・エム・ヘンリ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Burr Brown Research Corp
Original Assignee
Burr Brown Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burr Brown Research Corp filed Critical Burr Brown Research Corp
Publication of JPS5834607A publication Critical patent/JPS5834607A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45376—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using junction FET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP57111419A 1981-08-21 1982-06-28 半導体の洩れ電流を補償する回路及び方法 Pending JPS5834607A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29484481A 1981-08-21 1981-08-21
US294844 1981-08-21

Publications (1)

Publication Number Publication Date
JPS5834607A true JPS5834607A (ja) 1983-03-01

Family

ID=23135190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57111419A Pending JPS5834607A (ja) 1981-08-21 1982-06-28 半導体の洩れ電流を補償する回路及び方法

Country Status (4)

Country Link
JP (1) JPS5834607A (de)
DE (1) DE3220736A1 (de)
FR (1) FR2511809B1 (de)
GB (1) GB2104331B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3811950A1 (de) * 1988-04-11 1989-10-19 Telefunken Electronic Gmbh Schaltungsanordnung zur arbeitspunkteinstellung eines transistors
DE10212863B4 (de) 2002-03-22 2006-06-08 Siemens Ag Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB769584A (en) * 1954-09-20 1957-03-13 Mullard Radio Valve Co Ltd Improvements in or relating to means for compensating transistor circuit arrangements in relation to external conditions
US3622902A (en) * 1969-11-26 1971-11-23 Bendix Corp Fet differential amplifier
DE2147179C3 (de) * 1971-09-22 1984-11-08 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Stromquelle
US3921013A (en) * 1973-05-30 1975-11-18 Rca Corp Biasing current attenuator
US3863169A (en) * 1974-01-18 1975-01-28 Rca Corp Composite transistor circuit
US4068254A (en) * 1976-12-13 1978-01-10 Precision Monolithics, Inc. Integrated FET circuit with input current cancellation
US4284872A (en) * 1978-01-13 1981-08-18 Burr-Brown Research Corporation Method for thermal testing and compensation of integrated circuits

Also Published As

Publication number Publication date
FR2511809B1 (fr) 1987-01-09
DE3220736C2 (de) 1993-03-25
GB2104331A (en) 1983-03-02
GB2104331B (en) 1985-10-09
FR2511809A1 (fr) 1983-02-25
DE3220736A1 (de) 1983-04-28

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