JPS5832346A - Ion implantation - Google Patents

Abstract

PURPOSE:To form a minute ion implantation area by pouring ions upon a base plate by using as a liquid metal ion source, an impure element necessary for the manufacture of a semiconductor device and can be introduced by an ion implantation method. CONSTITUTION:An alloy 1 which is a component element of a base plate and is used as a liquid metal ion source, is fused by being attached to a needle electrode 2. When voltage is applied across the needle electrode 2 and a drawer electrode 3 provided with a hole, the alloy 1 undergoes a field evaporation and a field ionization at the extreme end of the electrode 2, and ionized atoms jump out of the alloy 1 to make a current. Next, voltage is applied to an ion beam sent through the hole of the electrode 3 so as to accelerate the beam, and an image having an almost equal multiplying factor to the ion source is imaged upon a base plate 5 by means of an electrostatic lens 4. An arbitrary amount of ions are implanted on the arbitrary position of the plate 5 by curving the beam by means of a deflecting electrode 6. By the means mentioned above, impure elements necessary for a semiconductor can be used as a liquid metal ion source. Besides, ions can be implanted upon the base plate 5 without sending the ion beam through a mass spectrograph.

Description

【発明の詳細な説明】 本発明はイオン注入法に係シ、特に、液体金親イオンＳ
ｔ−用いたイオン注入法に関する＠従来、半導体基板の
任意の領域に不純物元素をイオン注入する場合、フォト
レジスト或いは二酸化シリ；ン（８１０ｓ）Ｋよるイオ
ン注入マスクを設け、該マスクを通してイオン注入を打
力うマスクイオン注入法が主に行なわれている。しかし
、マスクを使うイオン注入では、１４ｍ以下の黴細なパ
ターンを形成す為事が困難であるばか）でなく１パター
ンが黴１１１ｉｂＫなるに従いマスクの影による拘−性
の悪化や、マスク周辺でマスク材０一部が半導体基板中
ヘノツタオンにより注入されるために生じ為電気的特性
０１ｌＡＩＩＡ領域Ｏ割金が増大するなどマスクを通し
てＯ微細領域へＯイオン注入は困峻となる・ これら−微細領域へのイオン注入の諸間髄を解決する一
方法として不純物イオンビーム１０．１μｍ以下に絞り
、半導体基板の任意の微少部位に直警イオン注入するマ
スクレスイオン注入法という技術が考えられている。し
かしイオン注入に必ｗｅ輝度を持すて、０．１μｍ以下
にイオンビームを絞る事は著しく困離である・イオンビ
ーム発生法は、高周波放電、アーク放電皓あるが、成体
金属よりの電界蒸発型イオン９のみがζＯ条件を満す・
しかじ、液体金属よ）Ｏ電界豚発イオン−ｃ以下液体金
属イオン＊）でイオン化できる元ｊｌＫ＃ｉ、以下に述
べるような多く０ＩＩＩＩｌｉＩがあり、半導体飯歯の
製造Ｋ１ｆｔ？要な不純物元素をこの方法でイオン化す
る事は峻しい〇 液体金属イオン参でイオン化できる元嵩鉱、次にあげる
２つの条件を満足しなければならない・イオン−金属は
タングステン■或いは毫すブデン（Ｍ４）　）から成る
針電１上に付着され石のでｓ　１０００℃以上で溶融す
る元素でけ針電１／ＩＡ−ｉｌＸ該温度で嬉−するｅこ
のため、イオン−として用いる元素は比較的低融Ｊ＃を
持つもので擾ければならない・重九針電極の先端に最も
電界が集中することｋようてす・このとき融点でｅ３Ｈ
気圧が高いと熱的要因による蒸発が電ＩＩ先端以外から
多量に生じるが、電極先端外近辺での電界は電極先端に
比べて小さいため１発した粒子はイオン化畜れずに発生
するという問題があゐ・ 従９て１電１先端以外から発生す１１１１発ビームの 孝量を抑える九めに融点でａｌｌＡ気圧が低い元素であ
る必要がある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ion implantation method, and in particular, the present invention relates to an ion implantation method.
Regarding ion implantation method using T- Conventionally, when ion implanting an impurity element into an arbitrary region of a semiconductor substrate, an ion implantation mask made of photoresist or silicon dioxide (810S) K is provided, and ion implantation is performed through the mask. A force mask ion implantation method is mainly used. However, with ion implantation using a mask, it is difficult to form a fine pattern of 14 m or less, and as one pattern becomes 111 ibK, the shadow of the mask worsens the ion implantation, and the area around the mask deteriorates. This occurs because a part of the mask material is implanted into the semiconductor substrate by henotation, resulting in an increase in the electrical characteristics of the O ion in the AIIA region, making it difficult to implant O ions into the microscopic region through the mask. As a method for solving the problems of ion implantation, a technique called maskless ion implantation is being considered, in which the impurity ion beam is narrowed down to 10.1 μm or less and the ions are directly implanted into any minute portion of a semiconductor substrate. However, it is extremely difficult to focus the ion beam to 0.1 μm or less while maintaining the necessary brightness for ion implantation.Ion beam generation methods include high-frequency discharge and arc discharge, but electric field evaporation from a solid metal Only type ion 9 satisfies the ζO condition.
However, liquid metal) O electric field pig ion - c Below liquid metal ion *) There are many 0IIIIliI as described below, and there are many 0IIIliI as described below, and the production of semiconductor iron teeth K1ft? It is difficult to ionize essential impurity elements using this method. 〇 Wonden ore can be ionized with liquid metal ions. The following two conditions must be satisfied. ・The ion-metal is tungsten ■ M4)) Since the stone is attached to the needle electrode 1 consisting of It must be stirred with something that has melting point J
When the atmospheric pressure is high, a large amount of evaporation due to thermal factors occurs from areas other than the tip of the Electron II, but since the electric field near the outside of the electrode tip is smaller than that at the tip of the electrode, there is a problem that a single particle is generated without being ionized. 2. Therefore, in order to suppress the filtration of the 1111 beams generated from sources other than the tip of the 1st electrode, it is necessary to use an element with a low melting point and allA pressure.

半導体装置を製造する上で必要な不純物元素で１ あゐイオｒ（８）％’／譬！：ｌ２（８１）、七ｖｙ（
Ｂｅ）、ｋ３１（ムＳ１、りン枦）、ボ■ン（２））等
はすべて液体金楓イオン−として用いることはできない
・ζＯため、これらの不純物を金（ムＵ）、白金（Ｐｉ
）等の金属と合金化して液体金属イオン−としての条件
を満たすようＫＬ、該合金を金属イオン−としてイオン
化すゐ例はあｈが、ムｕ、ｐｉは半導体懐１ｆｅ４１性
に有害な元素であるため箋該合金をイオン化した優、イ
オンビーム憂質量分ａ＠に通すことＫよ嘗てＡｕ、ｐｔ
を除き、必要な元１１ｏみをＭＲり出し、基板にイオン
注入する必要がある・しかじ、質量分離器を通すとイオ
ンビームを細く絞る事が―離とな如、基板に黴−なイオ
ン注入領域を形成することは不可能である・ 本発明の目的は一半導体装置展造上必要な不純物でイオ
ン注入法を用いて導入できる元！ｌを液体金属イオン源
として使用で１為ようにし、質量分離器を通す仁となく
基板にイオン注入することにようて做細なイオン注入領
域を形成すゐ方法を提供するためにある・。Impurity elements necessary for manufacturing semiconductor devices are 1% (8)%'/parable! :l2(81), 7vy(
Be), k31 (MuS1, phosphorus), and Bon (2)) cannot all be used as liquid gold maple ions.
), etc., to satisfy the conditions as liquid metal ions, and the alloy is ionized as metal ions. For some reason, the alloy has been ionized and the ion beam has to be passed through the ion beam a@, once Au, pt.
However, when passing through a mass separator, the ion beam is narrowed down, and moldy ions are removed from the substrate. It is impossible to form an implanted region.An object of the present invention is to form an impurity that is necessary for semiconductor device development and can be introduced using ion implantation. The object of the present invention is to provide a method for forming a fine ion implantation region by implanting ions into a substrate without passing through a mass separator, using a liquid metal ion source as a liquid metal ion source.

液体金属イｙｙ−でイオン化できる元素は、一連したよ
うｋｌｌｌｋ膚が比較的低く１然も融点での無気圧が低
い事が必要であゐ・１１嘗て５ＢｓａＢ等は融点が高（
１曾たムｓｏ　ｌｉｅ　８・、Ｐ等は融点で０１気圧が
高％／′％仁とからイオン−として用いる事はできない
。Elements that can be ionized in liquid metals have a relatively low melting point and require a low air pressure at the melting point.
Since the melting point of SOLE 8., P, etc. is high at 0.1 atm, it cannot be used as an ion.

本尭明社１半導体基板構成元集の−り或い＃ｉ該基板構
成元事関の合金と必要な不純物元素とを合金とし、液体
金属イオン＃とじて用いることができるようｋした−の
である・今、ヒ化ガツウム（Ｇ　ｍ　Ａ　ｓ）ＩＭｊｉ
ｌｌｌＢ　ｉ　ｔ−イオン注入した場合について考えて
みることｋする・Ｇａをペースとしてｓ鳳を１０−含有
した合金を用いると、皺合金の融点は純粋なＧａＯ融点
２＠、ｓｃより上昇するが５ｏｏｔ：以下ｒ１に、＆・
従って、合金比を選べば９Ｇ（１以下で液体にする仁と
が可能となる・また、該合金ａｍ分離することな（Ｇａ
Ａｓ基板注入しても、Ｇａは基板構成元素である光め何
ら電気的骨性に影響を与えることはない。Honkeimeisha 1 Collection of Semiconductor Substrate Constituent Elements The alloy of the substrate constituent element and the necessary impurity elements were made into an alloy so that it could be used as a liquid metal ion. There is, now, Gatuum Arsenide (G m A s) IMji
Let's consider the case of ion implantation. When using an alloy containing Ga as a pace and 10-s of S, the melting point of the wrinkled alloy will be higher than the pure GaO melting point of 2@, sc, but 5oot. : Below r1, &・
Therefore, if the alloy ratio is selected, it is possible to make it into a liquid at 9G (1 or less), and the alloy does not separate (Ga
Even when injected into an As substrate, Ga does not affect the electrical properties of the substrate due to light, which is a constituent element of the substrate.

この様ＫＧａＡ口基板ではＧａと不純物、インジウムリ
ン（ＩｆｉＰ）基板ではＩｎと不純物−アルミニつムｈ
ｌ（ムＩＧａムＳ）基板ではアル（ＪＬ？ム（ム１）或
いはａｍ或いはアルｔ−ラムオリラム（ム１Ｇ―）含金
と廿て不純物との合金等を用いれば質量分離することな
くイオン注入することができる・ 以下一本尭一の一実施例を説明することｋする。In this way, the KGaA substrate contains Ga and impurities, and the indium phosphide (IfiP) substrate contains In and impurities.
In the case of l(MuIGamuS) substrates, ion implantation can be performed without mass separation by using an alloy of aluminum (JL?mu(mu1) or am or alt-lam orilum (mu1G-)) containing metal and impurities. One embodiment of Ippon Koichi will be described below.

図面は本実＠〇一実施例を説明する九めＯ鋏雪Ｏ断薗−
である・ ＧａＡｓ基１１Ｋ対して不純物と１ｋｈ元素Ｓ轟を該基
ｓｉｍ如幅ｅ人するととにする・ＧａＡ＠基１１０構成
元素であるＧａＫｇｉを約１０１１書有した合金１を液
体金属イオン−とし、先端の曲率ｋＩＰ径ｔ０１〜ＩＪ
ＩｍＫｍ（したタングステン針電Ｉｋ！に付着させ、該
電極２の温度を９００ｔＫｌ、て該含金１を溶融すゐ・
針電１１２と１−２ｍｍφＯ＊０ＩＩｖ％え引き出し電
−３との関ＫＩＫＶｔ）電圧を印加すると溶融し九合金
ｌが該電１８０先端で電界蒸発及び電界電鴫してイオン
化され九本子が飛び出し、ｘｓｓｈｏイオン電流管得る
・このとき、イオン比はほぼ合金比と同一である・取ｐ
出せえイオンの ビー２病、引き出し電極ＳＫ開いてい為穴から　　　４
゜ｌμ人のイオンビームを得ることができた・該イオン
ビームを５０ＫＶＯ電圧を印加して加速させ、該加速さ
せたビームを静電レンズ４によシイオン−とほぼ尋普率
Ｏ像をＧａム＄基ＩＩｓ上に結ばせる・該ビームを偏向
電極６にようて曲げ、該基板５０任意Ｏ位置に任意Ｏ量
だけイオン注入すゐ・イオン注入量は基［ＩＫ流れ込む
イオンビーム電流を一定すればわかる・尚、針電＠２、
引き出し電極３、静電レンズ４、基’４［５、偏向電極
６はＩＸＩＧ’３’Ｏｒｒ以下に排気し九義雪本体に収
納される・このよう＃ＩＣ−ｖスクレスでイオン注入さ
れた基板は鋏基板上に保■膜を付は熱処理する・このよ
うにして単位画横ＩＩ轟え）５ｘ１６　　ｃｍ　　ａｓ
ｔイオンを注入し九所ｓ　８１０活性化率として約４０
−を得九・ 本発明によれば、半導体に必要な不純物元素を液体金属
イオン瀞として用いることがで自、ｌクイオンビームを
質量分離器に通すことなく基１１１にイオン注入でＩゐ
働 ａｗｅ簡単な説明 一画は本実−〇−奥施例を説−する九めＯ飯置０断ｍｌ
ｌである・The drawings are real @〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇1〇
・For the GaAs group 11K, impurities and 1K element S are added to the same amount as the group sim. ・Alloy 1 containing about 1011 GaKgi, which is a constituent element of GaA@ group 110, is used as a liquid metal ion. , tip curvature kIP diameter t01~IJ
ImKm (attached to a tungsten needle electrode Ik!), and the temperature of the electrode 2 was set to 900 tKl to melt the metal 1.
When a voltage (KIKVt) is applied between the needle electrode 112 and the 1-2mmφO*0IIv% extraction wire 3, it melts, and the nine alloy l is ionized by electric field evaporation and electric field electrolysis at the tip of the needle electrode 180, and nine needles fly out. xssho ion current tube is obtained. At this time, the ion ratio is almost the same as the alloy ratio.
Take out the ion bee 2 disease, the extraction electrode SK is open from the hole 4
An ion beam of ゜lμ was obtained. The ion beam was accelerated by applying a voltage of 50 KVO, and the accelerated beam was passed through the electrostatic lens 4 to form a nearly common O image with a Ga ion beam. - The beam is bent over the deflection electrode 6, and ions are implanted at any position on the substrate 50 in an arbitrary amount. - The amount of ions to be implanted is base [if the ion beam current flowing into IK is kept constant] I understand, Nao, Needle Den @2,
The extraction electrode 3, electrostatic lens 4, group '4[5, and deflection electrode 6 are evacuated to below IXIG'3'Orr and housed in the Kuyoshi main body.Substrate ion-implanted with #IC-v scres like this. Attach a protective film to the scissor substrate and heat treat it.In this way, the unit image horizontally II) is 5x16 cm as
After implanting T ions, the activation rate of S810 in nine places was approximately 40.
According to the present invention, an impurity element necessary for a semiconductor can be used as a liquid metal ion source. awe simple explanation one stroke is true - 〇 - explanatory example - 9th O Iioki 0 cutting ml
It is l.

Claims (1)

【特許請求の範囲】[Claims] 半導体基板の構成元素の一つまたは誼基板構成元素間Ｏ
合金と不純物元素との合金をイオン−金属として該基１
１にイオン注入することを＊＊とするイオン注入法・One of the constituent elements of the semiconductor substrate or O between the constituent elements of the substrate
The alloy of the alloy and the impurity element is used as an ion-metal in the group 1.
Ion implantation method that involves implanting ions into 1.