JPS5831673A - Solid-state image pickup element - Google Patents
Solid-state image pickup elementInfo
- Publication number
- JPS5831673A JPS5831673A JP56130965A JP13096581A JPS5831673A JP S5831673 A JPS5831673 A JP S5831673A JP 56130965 A JP56130965 A JP 56130965A JP 13096581 A JP13096581 A JP 13096581A JP S5831673 A JPS5831673 A JP S5831673A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- electrode pad
- film
- solid
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は光を検知して画像信号を得る固体撮像素子に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solid-state imaging device that detects light and obtains an image signal.
この種固体撮像素子の基本構成を第１図に模式的に示す
。斯る素子は半導体からなる哉数の光電変換領域−・・
・が配列された受光部Ａと、この受光部Ａの両辺に沿っ
て設けられた複数の転送電極（至）・・・を備えたＣ０
Ｄ（電荷結合素子）型の２本の電荷転送部Ｂ、Ｂと、こ
れ等受光部Ａと電荷転送部Ｂ、Ｂとの闇に夫々介在した
２本のゲート電極（Ｏ（Ｑと、に依って構成されている
。そして、ゲート電極（Ｃ１（Ｃ）には、上記受光部Ａ
に生じる光電荷を２本の電荷転送部Ｂ、Ｂに振り分は導
入する為のクロックパルスφＧが印加されると共に、電
荷転送部Ｂ、Ｂの各転送電極（至）・・・には受光部囚
から導入された光電荷を画像信号として外部に転送出力
する為の２相のクロックパルス４．４が印加される構成
となっている。The basic configuration of this type of solid-state image sensing device is schematically shown in FIG. Such an element consists of several photoelectric conversion regions made of semiconductors...
C0, which is equipped with a light receiving section A in which .
Two D (charge-coupled device) type charge transfer parts B, B, and two gate electrodes (O(Q, The gate electrode (C1(C)) has the above-mentioned light receiving part A.
A clock pulse φG is applied to distribute and introduce the photocharge generated in the two charge transfer sections B, B, and each transfer electrode (to) of the charge transfer sections B, B receives light. The structure is such that two-phase clock pulses 4.4 are applied to transfer and output the photocharges introduced from the capacitor to the outside as image signals.
第２図に斯様な固体撮像素子の従来例の断面図を示す。FIG. 2 shows a sectional view of a conventional example of such a solid-state imaging device.
同図に於いて（１）は半導体基板でｎ型シリ（１）
コンが用いられる。（２）は該半導体基へ表面に酸化形
成された透明な二酸化シリコンからなる絶縁膜である。In the figure, (1) is a semiconductor substrate, and n-type silicon (1) is used. (2) is an insulating film made of transparent silicon dioxide formed by oxidation on the surface of the semiconductor base.
そして、第１図の模式平面図にも示した如く、上記半導
体基板（１）内に形成された光電変換領域Ｉ＆ｌ・・・
からなる受光部Ａと、この受光部Ａの両側辺の上記絶縁
膜（２）上に形成された２本のゲート電極（Ｃ）＋（］
と、更にその両外側辺に形成された転送電極（至）ｎを
有する電荷転送部Ｂ％Ｂと、を備えており、これ等の働
きに依って画像信号が得られる。As shown in the schematic plan view of FIG. 1, the photoelectric conversion regions I&l... formed in the semiconductor substrate (1)...
and two gate electrodes (C)+(] formed on the insulating film (2) on both sides of the light receiving part A.
and a charge transfer section B%B having transfer electrodes (to) n formed on both outer sides thereof, and an image signal is obtained by the action of these components.
（３）は上記半導体基板（１）の縁部の絶縁膜（２）上
に形成された電極パッドであり、上記ダート電極（０）
（Ｑ）。(3) is an electrode pad formed on the insulating film (2) at the edge of the semiconductor substrate (1), and the dirt electrode (0)
(Q).
又は上記転送電極（ｔｊ（至）に電気的に接続され、ク
ロックパルスφＧ、又はへ、４を供給する為の外部リー
Ｆ線をポンデンディング結合する所である。Alternatively, it is electrically connected to the transfer electrode (tj) and is connected to an external lead F line for supplying the clock pulse φG or 4.
（４）ハ上記受光ｗｈＡト、ケート電極（ｃ）（ｃ）
ト、電荷転送部Ｂ、Ｂと、からなる撮像機能部の周囲の
絶縁ＩＩ（２）上に形成されたアルミニウムの蒸着膜か
らなる光遮蔽膜であり、上記転送電極（至）（至）とは
層間絶縁膜（２Ｙを介して一部が重なり合う様に構成し
、光の遮蔽を行なっている。(4) C above light reception whA g, gate electrode (c) (c)
It is a light shielding film made of a vapor-deposited aluminum film formed on the insulation II (2) around the imaging function part consisting of the charge transfer parts B and B, and the transfer electrodes (to) (to) and (to). are constructed so that they partially overlap with each other via an interlayer insulating film (2Y) to shield light.
斯様な固体撮像素子は、光遮蔽膜（４）に依って光電変
換領域−の周囲近傍に於いて、即ち、半導体基ｉの中央
部に於いて、この光電変換領域−以外の半導体基板内に
光が入射する事を防止し、この入射光に依って生じるノ
イズ光電荷が電荷転送部Ｂを転送中の正常な光電荷に混
入する不都合の改善を計っている。Such a solid-state image sensing device uses a light shielding film (4) to protect the interior of the semiconductor substrate other than the photoelectric conversion region near the periphery of the photoelectric conversion region, that is, at the center of the semiconductor substrate i. This is intended to prevent light from being incident on the charge transfer section B, and to improve the inconvenience that noise photocharges generated by this incident light mix into normal photocharges being transferred through the charge transfer section B.
しかしながら、近年この種固体撮像素子の集積化が進み
この為、格子欠陥の無い良質の半導一基板が用いられる
様になり、小面積の光電変換領域（２）・・・であって
も充分な光電荷が効率良く得られる様になっている。こ
の為、半導体基板（１）の縁部に入射された光に依って
生じるノイズ光電荷量も増大し、このノイズ光電荷が、
この半導体基板（１）の中央に位置する電荷転送部Ｂに
迄到達する事になる。従って、この電荷転送部Ｂを転送
中の正常な光電荷にノイズ光電荷が混入する不都合が生
じ、これに依り得られる画像信号のＳ／Ｎ比が劣化する
欠点があった。However, in recent years, as the integration of this type of solid-state imaging device has progressed, high-quality semiconductor substrates without lattice defects have come to be used, and even a small-area photoelectric conversion region (2)... This makes it possible to efficiently obtain photoelectric charges. For this reason, the amount of noise photocharge generated by the light incident on the edge of the semiconductor substrate (1) also increases, and this noise photocharge becomes
The charge reaches the charge transfer section B located at the center of the semiconductor substrate (1). Therefore, there is a problem in that noise photocharges are mixed into the normal photocharges being transferred through the charge transfer section B, which causes a disadvantage that the S/N ratio of the image signal obtained is degraded.
本発明は上述の不都合を解消するものであり、受光部以
外の半導体基板内に入射される光を完全に遮蔽した構成
の固体撮像素子を提供するものである。The present invention solves the above-mentioned disadvantages, and provides a solid-state image sensor having a structure in which light entering the semiconductor substrate other than the light receiving portion is completely blocked.
第５図に本発明の固体撮像素子の一実施例の断面図を示
す。同図の本発明実施例が第２図の従来例と異なる所は
、光電変換領域−を有する受光部Ａと、ゲート電極（ｃ
ｌ （ｃｌと、転送電極ｎ（至）を有する電荷転送部Ｂ
、Ｂと、からなる撮像機能部の周囲近傍のみならず、半
導体基板（１）の縁部に配置された電極パラＦ（３）を
残して、この半導体基板（１）の表面の絶縁膜（２）上
の全面にアルミニウムの蒸着層からなる大遮蔽膜（４）
′を設けた点にある。そして、本発明固体撮像素子が最
も特徴とする所は、上記電極パッド（３）の周縁部と、
上記光遮蔽膜（４）′の開口の周縁部と、が層間絶縁膜
（２）′を介して重なり合う点にあり、これに依って、
電極パッド（３）と光遮蔽膜（４Ｙとの間隙が互いに接
触する事なく完全に覆蓋されている。FIG. 5 shows a cross-sectional view of an embodiment of the solid-state imaging device of the present invention. The difference between the embodiment of the present invention shown in the same figure and the conventional example shown in FIG.
Charge transfer section B having l (cl) and transfer electrode n (to)
, B, and the insulating film ( 2) Large shielding film (4) consisting of a vapor-deposited layer of aluminum on the entire surface
′ is provided. The most distinctive feature of the solid-state imaging device of the present invention is that the periphery of the electrode pad (3),
The peripheral edge of the opening of the light shielding film (4)' overlaps with the interlayer insulating film (2)', and as a result,
The gap between the electrode pad (3) and the light shielding film (4Y) is completely covered without coming into contact with each other.
斯る構成の固体撮像素子に於いては、受光部囚の光電変
換領域−・・・以外の半導体基板は、ゲート電極（Ｑ）
（Ｃ）と、電荷転送電極（至）・・・と、電極パッド（
おと、これ等電極と端部が重なり合った光遮蔽膜と、に
依って全面的に覆われており、全く露出されていない。In a solid-state image sensor having such a configuration, the semiconductor substrate other than the photoelectric conversion region in the light receiving section is the gate electrode (Q).
(C), charge transfer electrode (to)..., electrode pad (
Furthermore, these electrodes are completely covered by a light shielding film having overlapping ends, and are not exposed at all.
かな如く、電極パッド箇所の金属光遮蔽膜の開口周縁部
と、電極パラＦの周縁部と、を層間絶縁膜を介して重な
り合せたものであるので、従来装置の如く離間した電極
パッドと、金属ｊ光遮蔽膜と、の間隙から半導体基板内
に入射され引光に依だで生じるノイズ光電荷を皆無とす
る事ができる。従って、Ｓ／Ｎ比の良好な画像信号を得
る事ができる。As shown in the figure, the opening periphery of the metal light shielding film at the electrode pad location and the periphery of the electrode para F are overlapped with each other via the interlayer insulating film. It is possible to completely eliminate noise photocharges that are generated due to light entering the semiconductor substrate through the gap between the metal j light shielding film and the light shielding film. Therefore, an image signal with a good S/N ratio can be obtained.
第１図は固体撮像素子の基本構成を示す平面模式図、第
２図は従来の固体撮像素子の断面図、第３図は本発明固
体撮像素子の断面図、であり、（１）は半導体基板、（
２１（２Ｙは絶縁膜、（３）は電極パッド、（４）（４
Ｙは光遮蔽膜、Ａは受光部、Ｂは電荷転送部、を夫々示
している。FIG. 1 is a schematic plan view showing the basic configuration of a solid-state image sensor, FIG. 2 is a cross-sectional view of a conventional solid-state image sensor, and FIG. 3 is a cross-sectional view of a solid-state image sensor of the present invention. (1) is a semiconductor substrate,(
21 (2Y is an insulating film, (3) is an electrode pad, (4) (4
Y indicates a light shielding film, A indicates a light receiving section, and B indicates a charge transfer section.
Claims (1)
る光電荷を転送出力する電荷転送部と、該電荷転送部に
連なる各種の電極パッドと、を備え、上記受光部箇所と
上記電極パッド箇所とを除いた上記半導体基板表面に層
！絶縁膜を介して金属光遮蔽膜を設けてなる固体撮像素
子に於いて、上記電極パッド箇所の金属光遮蔽膜の開口
周縁部は、電極パッドの周縁部と眉間絶縁膜を介して重
なり合う事を特徴とした固体撮像素子。(1) A semiconductor substrate is provided with a plurality of light receiving sections, a charge transfer section that transfers and outputs photocharges generated in the light receiving section, and various electrode pads connected to the charge transfer sections, and the above light receiving section and the above A layer on the surface of the above semiconductor substrate excluding the electrode pad area! In a solid-state image sensor in which a metal light shielding film is provided with an insulating film interposed therebetween, the opening periphery of the metal light shielding film at the electrode pad location overlaps the periphery of the electrode pad with the glabella insulating film interposed therebetween. A distinctive solid-state image sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56130965A JPS5831673A (en) | 1981-08-20 | 1981-08-20 | Solid-state image pickup element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56130965A JPS5831673A (en) | 1981-08-20 | 1981-08-20 | Solid-state image pickup element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5831673A true JPS5831673A (en) | 1983-02-24 |
| JPH0126230B2 JPH0126230B2 (en) | 1989-05-23 |
Family
ID=15046757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56130965A Granted JPS5831673A (en) | 1981-08-20 | 1981-08-20 | Solid-state image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5831673A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE36155E (en) * | 1986-01-22 | 1999-03-23 | The West Bend Company | Apparatus for cutting potatoes and onions |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113559363B (en) | 2013-03-22 | 2023-10-31 | 美国安进公司 | Syringe and method of assembly |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5093328A (en) * | 1973-12-18 | 1975-07-25 | ||
| JPS53105116A (en) * | 1977-02-24 | 1978-09-13 | Sony Corp | Solid pickup device |
| JPS5422122A (en) * | 1977-07-20 | 1979-02-19 | Fujitsu Ltd | Solid state pickup element |
-
1981
- 1981-08-20 JP JP56130965A patent/JPS5831673A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5093328A (en) * | 1973-12-18 | 1975-07-25 | ||
| JPS53105116A (en) * | 1977-02-24 | 1978-09-13 | Sony Corp | Solid pickup device |
| JPS5422122A (en) * | 1977-07-20 | 1979-02-19 | Fujitsu Ltd | Solid state pickup element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE36155E (en) * | 1986-01-22 | 1999-03-23 | The West Bend Company | Apparatus for cutting potatoes and onions |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0126230B2 (en) | 1989-05-23 |
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