JPS582731A - Moisture sensitive element - Google Patents
Moisture sensitive elementInfo
- Publication number
- JPS582731A JPS582731A JP56102713A JP10271381A JPS582731A JP S582731 A JPS582731 A JP S582731A JP 56102713 A JP56102713 A JP 56102713A JP 10271381 A JP10271381 A JP 10271381A JP S582731 A JPS582731 A JP S582731A
- Authority
- JP
- Japan
- Prior art keywords
- moisture
- moisture sensitive
- sensitive member
- semiconductor substrate
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
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- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、大気中または（大気と異なる）ガス中ｅａ
ｔ変化を、電ａｔた電圧変化として取参出すための小形
の感・慢嵩子に閤する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for detecting ea in the atmosphere or in a gas (different from the atmosphere).
The t change is inserted into a small sensor to extract it as a voltage change.
■度欄定の方法は、無数ＫＴｏ）枚挙にいとｔが１ｋＩ
Ａが、現在使用されている小形の１１度針のはとんどけ
、１１変によってそのインピーダンスが変化する感温材
料を備えた線量素子と、そＯインピーダンスの変化を測
定し表示するための一気一路よ）威る。これは、これら
電気信号を用いる感−素子は構造が簡単で、可動部分が
なく、小形化に有利なためである。しかし、多くの感湿
材料は、Ｓ低酸化ＡＪ雪へ中各種セランクスに代表され
るように高インピーダンスであ〕、こＯため、感湿素子
のインピーダンスは抵抗値で数十Ｍｍから数十ＭＯ。■The method of determining the degree column is countless KTo), and t is 1kI.
A is a dose element equipped with a temperature-sensitive material whose impedance changes according to the small 11-degree needle currently in use, and a device for measuring and displaying changes in impedance. It's all the way). This is because sensing elements that use these electrical signals have a simple structure, have no moving parts, and are advantageous for miniaturization. However, many moisture-sensitive materials have high impedance, as typified by low oxidation AJ snow, and various types of selanx. .
容量値で数＋ＰＦから数＋ｍＦＱ度と大変高−０このえ
め、そＯインピーダンスを精度良く検出するためＫは、
高入力インピーダンスの電圧針もしくは、それに見合う
た複ｍｅ電気園路を必要とするし、高いインピーダンス
に由来する電気線管Ｏ影響ｔ−ｔぬがれない。また感温
素子Ｏインピーダンスをなるぺ〈低くするために感湿材
料をなるべく大きくして、静電容量を測る感激素子にお
いてはその電極面積を大きくする。電気抵抗を測る感猥
素十ＫｋＰいては電Ｉｉ形状を櫛形にするなどＯ工夫を
畳する。このため、この種の感激素子Ｏ小形化は、低イ
ンピーダンス化の要請と矛盾し、数ａｌｆたは数■のナ
イスが限界である。電気回路を含め九１１度針全体の大
きさを考えた場合も、Ｉ鎗な電気ａ路のため、や祉）小
形化に限界がある。The capacitance value ranges from several + PF to several + mFQ, which is very high.In order to accurately detect the impedance, K is
It requires a voltage needle with a high input impedance or a corresponding multiple electric field, and the electrical conduit O effect due to the high impedance cannot be removed. Furthermore, in order to reduce the impedance of the temperature sensitive element as much as possible, the moisture sensitive material is made as large as possible, and the electrode area of the sensitive element that measures capacitance is made large. The sensitizer used to measure electrical resistance is 10 KkP, and the shape of the electrode Ii is made into a comb shape. For this reason, this type of miniaturization of the sensing element O conflicts with the demand for lower impedance, and is limited to a few alf or a few square meters. Considering the overall size of the 911 degree hand including the electric circuit, there is a limit to miniaturization due to the large electrical path.
本発明の目的は、高インピーダンスの感温部材でも支障
なく使用できて、且■度変化に応じた感温部材Ｏインピ
ーダンス変化を直接電圧中電流の変化として出力する小
形で能動的な線量素子を提供する事にある０
本発明は１通常ＯＭ０８ＦＩＴのゲート電極を遣水性の
膜とし、それ−とＩ！Ｉｌｌ属の間に１周ｍｏｗ度によ
ってそのインピーダンスが変化する感温部材を挿入した
構造である。感温部材としては、陽極酸化ムｌｏｏｍ膜
中８ａＯ＊スパック属などが用いられる。The object of the present invention is to provide a small active dose element that can be used without any problems even with high impedance temperature sensing members, and that directly outputs changes in impedance of the temperature sensing member O in response to temperature changes as changes in voltage and current. The purpose of the present invention is to provide (1) a gate electrode of a normal OM08FIT with a water-repellent film, and an I! It has a structure in which a temperature-sensitive member whose impedance changes depending on the mow degree of one rotation is inserted between the elements. As the temperature-sensitive member, 8aO*Spac group in an anodic oxidized room film or the like is used.
ゲート電極に適当な電圧を印加し、半導体基板中にチャ
ンネルが形成された状態で感■部材Ｏイｙピーダンスが
、温度に応じて変化すると、チャンネルを流れる電流側
そのインピーダンス変化に応じて変化し、外部に出力さ
れる。When an appropriate voltage is applied to the gate electrode and the impedance of the sensing member changes depending on the temperature with a channel formed in the semiconductor substrate, the current flowing through the channel changes in accordance with the change in impedance. , is output to the outside.
つｆｆＫ１１面によシ本発明につ−で具体的に説明する
。The present invention will be specifically explained on page 11.
本発明で用いる半導体基板は、ａｌｌ、ｙｍを問わ１に
いが、ここでは便宜上 、ｍ基板を用いた場合について
説明する。第１図は本素子Ｏ断画園である。図中１はソ
ース拡散層、２はト°レイン拡歓層で、ともに半導体基
１［３中に設けられた戸履拡散層である。絶縁膜４と感
湿部材５を介してゲージ電ＩＩ６が半導体基板上に設け
られている。The semiconductor substrate used in the present invention can be either all or ym, but for convenience, the case where an m substrate is used will be described here. Figure 1 shows this element O-dangaen. In the figure, 1 is a source diffusion layer, and 2 is a train expansion layer, both of which are door diffusion layers provided in the semiconductor substrate 1. A gauge electrode II 6 is provided on the semiconductor substrate with an insulating film 4 and a moisture sensing member 5 interposed therebetween.
本尭明Ｏ動作原理社次の過シである１本素子のソース拡
散層とドレイン拡散層ＯＭのチャンネルに流れる電＃ｌ
ＩＤは次の式で褒わされる。The current flow in the channel of the source diffusion layer and drain diffusion layer OM of one element is as follows:
ID is rewarded with the following formula:
Ｉ動翼（−〇ｓ）・Ｃ−Ｕ
えだし
ここで
Ｃ：感ａＳ材と絶縁ｇｏ合成審量
Ｗ：ゲート幅
Ｌ：ゲート長
一一チヤンネル内のホールの有効鳥勤度ｖｄ＝ドレイン
電圧
ｖＩ：ゲート電圧
、 Ｖｔ ：ゲートＯしきい値電圧
１１［Ｋ応じて感温材の容量が変化する場合は。I rotor blade (-〇s)・C-U Erased here C: Sensitive aS material and insulation go composite judgment W: Gate width L: Gate length 1. Effective frequency of hole in channel vd = drain voltage vI: Gate voltage, Vt: Gate O threshold voltage 11[K] When the capacitance of the temperature sensitive material changes depending on the voltage.
Ｃ＃ｉ次式で表される。C#i is expressed by the following equation.
Ｃ＝ （Ｃｉ ’ ＋ Ｃｈ ”）−’ここで
Ｃｉ ： Ｊ！ｌ縁膜の容量
Ｃｈ： 感湿部材の容量
こ０＊に、感温部材の容量１の変化は Ｓ＊素子中を流
れる電流ＩｎＫＪＩｌｌＫ現れる。C= (Ci ' + Ch '') - 'where Ci: J!L capacitance Ch: capacitance of moisture-sensitive member 0*, change in capacitance 1 of temperature-sensitive member is S* current flowing through the element InKJIllK appears.
まえ、感温部材の抵抗Ｂが、変化する場金燻。First, the resistance B of the temperature-sensitive member changes.
ｃｈ −ｏとなり絶縁層の抵抗をＲｉとして、 Ｖ、Ｆ
が次Ｏ様に表される
ｖ 、 −Ｒｉ ｖ 、＃
８＋８１
ζζで
ｖｌ：絶縁膜上の電位
Ｖｙ’：ゲート電極の電位
こ０ＩＮＫ、中はり−の変化がＩ勝に現れる。ch -o and the resistance of the insulating layer is Ri, V, F
v, -Riv, #8+81ζζ, which is expressed as O, where vl: potential on the insulating film Vy': potential of the gate electrode.
次に１本発明の実施例の等価回路とその特性を−２と図
３にそれぞれ示す。この実施例では、感温部材として陽
極酸化Ａｈへ、ゲート電極として。Next, an equivalent circuit of an embodiment of the present invention and its characteristics are shown in FIG. 2 and FIG. 3, respectively. In this example, anodized Ah is used as the temperature sensitive member and as the gate electrode.
透水性ＯＡｊ、絶縁層として８ ｉ ０ｎ、半導体Ｉｓ
板として鵡履８１を用いて艷る。感湿部材の大きさ＃１
２４ｐｙＢＸ＠Ｏｓｍと非常に小さく、そのインピーダ
ンス４徹ｐｖと非常に大きいが１本発明Ｏ動作原履に愈
んら支障はない。図２のように１本素子と外部の３鵞に
Ωの＃Ｉ抵抗を直列にした≠インバータの回路を作）、
ソース拡散層とドレイン拡散層０間の電位差’ｉ ｄ
ａ ｔ ｅ通常のぺ／レコーダに直接入力してＩｌｌか
甘え特性を図３に示す。ｖｌとして一定の電圧を印加し
た状態で、Ｓ度を（ｌＲ，Ｈ，（薯対置度）から５５１
１Ｒ，Ｈ，まで変化させた時に、前記ｖｄ畠は、約４ゼ
ルト変化している。このように本素子は、外部に特別の
１ｍ定回路を必要とせず、直接表示器に接続できる特徴
を有している。Water permeability OAj, 8 i On as insulating layer, semiconductor Is
It is worn using sandals 81 as a board. Moisture sensitive member size #1
Although it is very small at 24pyBX@Osm and its impedance is very large at 4 pv, it does not impede the operation principle of the present invention in any way. As shown in Figure 2, create an inverter circuit by connecting one element and three external resistors with #I resistors of Ω in series),
Potential difference 'i d between source diffusion layer and drain diffusion layer 0
Figure 3 shows the Ill/Amae characteristics obtained by directly inputting data into a normal PE/recorder. With a constant voltage applied as vl, the S degree is changed from (lR, H, (opposite degree) to 551
When changing to 1R,H, the vd Hatake changes by about 4 zelts. In this way, this element has the feature that it can be directly connected to a display without requiring a special 1 m constant circuit externally.
以上１図面に従って本発明の原理と実施例について説明
を行った。本発明による感温素子は、電流または電圧の
変化によってｉ１度の検出を行う能動素子であるから、
全く測定回路を用いずに、 ｔたは簡素な測定回路を用
いて衰示装置に接続できる。さらに本発明の感温素子は
、高インピーダンスの感湿部材でも支障なく用いる事か
でｌるので。The principle and embodiments of the present invention have been explained above with reference to one drawing. Since the temperature sensing element according to the present invention is an active element that detects i1 degrees by changes in current or voltage,
It is possible to connect to the attenuation device without any measuring circuitry or with a simple measuring circuit. Furthermore, the temperature sensing element of the present invention can be used without any problem even with high impedance moisture sensing members.
感湿部材を数十ｊｆｆｌサイズまたはそれ以下Ｋまで小
形化できる。このように本発明を用−れば、感涙素子の
小形化のみならず、ｆｆ１度針全体２の小形化にも非常
に有効である。さらに本発明による感湿素子は、半導体
基板ヒに形成されるので、同一半導体基板上に１通常の
ＭＯ８ＩＣ技術にょ９電気回路を組み込む事も可能であ
〕、検出部と信今処理部を一体化した集積化センナと成
す８ｍできる。The moisture sensitive member can be downsized to several tens of JFFL size or even smaller. As described above, the present invention is very effective in reducing not only the size of the lachrymal sensitive element but also the entire 1 degree ff needle 2. Furthermore, since the moisture sensing element according to the present invention is formed on a semiconductor substrate, it is also possible to incorporate nine electric circuits using ordinary MO8IC technology on the same semiconductor substrate. It can be made up of 8m with integrated senna.
電気的雑音の点から見ると１本発１１による感温素子は
一種の能動素子であるから、高入カインビー／ｙスＯ測
定回路を使用しないので、雑音島策が容品である。From the point of view of electrical noise, the temperature-sensing element based on the single-sensor 11 is a kind of active element, so it does not use a high-input Cainbee/ysO measurement circuit, so it is a good noise-reduction measure.
材料の点から見ると１本感湿素子は高インピーダンスの
感湿性材料を支障なく使用できるので。From a material standpoint, a single moisture-sensitive element can use high-impedance moisture-sensitive materials without any problems.
材料選択上の制約が大幅に緩和される。Restrictions on material selection are significantly relaxed.
素子構造の点から見ると１本発明では電流の流れる半導
体基板とＡＩ、α膜のような感温部材の間に、 ８ｉ０
＊のような絶縁膜が挿入されているので。From the point of view of the device structure, in the present invention, there is an 8i0
An insulating film like * is inserted.
次のような諸効果がもたらされる。１）ＩＩ極酸化Ａｌ
ｏｏｍ膜のように内部に大量のイオンを含む感湿材料を
用いても、半導体基板中にイオン性の汚染が侵入する事
がなく１品質の長期安定性と感湿材料Ｏ選択上の制約緩
和が得られる。２）＠極酸化ＡＪ＊Ｏａ膜のように製造
工寝で、導体や半導体とＯ界面が剥離したシ、界面にバ
リア膜が発生し感度低下を生じる特性を有する感湿材料
を支障なく用いる事ができ、付着強度や感度０ＪｉＬＩ
Ａ素子構造である。３）絶縁膜の耐圧が高いので、高駆
動電圧で使 、９用でき、チャンネル中を流れる
電流値を大きくできるし、ゲートのしきい値電圧の高低
に係わらず最適の動作電圧を設定しゲート電極に印加で
きもさらに、雰囲気透過性Ｏゲート電極が感温部材を履
っているため９周■の雰囲気Ｏ■変変動がすみ中かに感
湿部材に伝達されるため、応答速度が非常に速い。また
、！ＩＩＩＩｌ気逓遥性１１に履われた感一部材が、水
分に対するトラ、プを形威し、水分吸着が棗好なため、
高感度の素子が得られる。このように本発明による感温
素子は数多くの判点を備えている。The following effects are brought about. 1) II polar oxidation Al
Even if a moisture-sensitive material containing a large amount of ions is used, such as an oom membrane, ionic contamination will not enter the semiconductor substrate, resulting in long-term stability of the quality and alleviation of constraints on the selection of moisture-sensitive materials. is obtained. 2) It is possible to use moisture-sensitive materials without problems, such as the extremely oxidized AJ*Oa film, which has the property of peeling off at the conductor/semiconductor-O interface during manufacturing, and forming a barrier film at the interface, resulting in a decrease in sensitivity. is possible, adhesion strength and sensitivity are 0JiLI
It has an A-element structure. 3) Since the insulating film has a high breakdown voltage, it can be used at high driving voltages, and the current flowing through the channel can be increased, and the optimal operating voltage can be set regardless of the gate threshold voltage. In addition, since the atmosphere-permeable O gate electrode is equipped with a temperature-sensitive member, changes in the atmosphere during nine cycles are transmitted to the humidity-sensitive member in the blink of an eye, so the response speed is extremely high. fast. Also,! The sensitive material worn on the III1 air flow property 11 has a strong resistance to moisture, and has good moisture absorption.
A highly sensitive element can be obtained. As described above, the temperature sensing element according to the present invention has many advantages.
本発明は実施例に＠定されず、いくつかの賓形が考えら
れる。例えば、ゲート電極として雰−気を透過する愈な
いし孔を膜状た構造を採用することができる。感温部材
の代〕に特定のガスでそのインピーダンスが変化する感
ガス部材を用いれば感ガス素子が実現できるなどである
。The present invention is not limited to specific embodiments, and several forms are possible. For example, it is possible to adopt a structure in which the gate electrode has a film-like hole or hole that transmits the atmosphere. If a gas-sensitive member whose impedance changes with a specific gas is used instead of the temperature-sensitive member, a gas-sensitive element can be realized.
第１＠は本発明による感温素子の断面図。
館２図社夷箇例の特性を測定するため０ｍ路。
第３図は実施例の特性を示す図である。
図中の１はソース拡散層、２＃ｉドレイン拡散層。
３は半導体基板、４は絶縁膜、５は感温部材、６はゲー
１１．７は感温素子である。
特許出願人 安立電気株式会社
代理人 弁理士 小 池 龍太部The first @ is a cross-sectional view of a temperature-sensitive element according to the present invention. 0m road to measure the characteristics of the building. FIG. 3 is a diagram showing the characteristics of the embodiment. In the figure, 1 is a source diffusion layer, and 2#i is a drain diffusion layer. 3 is a semiconductor substrate, 4 is an insulating film, 5 is a temperature sensing member, 6 is a gate 11, and 7 is a temperature sensing element. Patent Applicant Anritsu Electric Co., Ltd. Agent Patent Attorney Ryotabe Koike
Claims (2)
とを備えた半導体基板（６）と；鍍半導体基板上に設け
られた絶縁膜（着と；雰−気の一度に応じてそのインピ
ーダンスが変化する轡性な有し、該絶縁属上に設けられ
た感湿部材（６）と；鋏感湿部＃が周囲の雰■気に接触
するごとき＃−気透過性をもたせ、かつ該感温部材を覆
って付着されて訃）。 鍍ツース拡散層と該ドレイン拡散層の間の該半導体基板
中に前記感温部材のインビーダｙｘＫ対応し九電流の通
るチャンネルを形成するためのダート電極（２）とを備
えた感湿素子。(1) Source diffusion layer (1) and drain diffusion layer (2)
a semiconductor substrate (6) comprising: an insulating film (6) provided on the coated semiconductor substrate; The moisture sensing member (6) is made air permeable so that the humidity sensing portion of the scissors comes into contact with the surrounding atmosphere, and is attached to cover the temperature sensing member. A moisture sensing element comprising a dirt electrode (2) for forming a channel through which a current passes, corresponding to the invider yxK of the temperature sensing member, in the semiconductor substrate between the tooth diffusion layer and the drain diffusion layer.
いた事ｔ４Ｉ徽とする特許請求の範１１１１１項記載Ｏ
感■素子。(2) Claim 11111 states that anodized 4α is used as the mus-sensitive material.
Feeling ■ Motoko.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56102713A JPS582731A (en) | 1981-06-30 | 1981-06-30 | Moisture sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56102713A JPS582731A (en) | 1981-06-30 | 1981-06-30 | Moisture sensitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS582731A true JPS582731A (en) | 1983-01-08 |
Family
ID=14334901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56102713A Pending JPS582731A (en) | 1981-06-30 | 1981-06-30 | Moisture sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS582731A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6085358A (en) * | 1983-08-19 | 1985-05-14 | イ−エムアイ・リミテツド | Moisture sensitive element and manufacture thereof |
| US8016002B2 (en) | 2005-11-29 | 2011-09-13 | Bridgestone Corporation | Sealing/pump-up device |
| CN108982592A (en) * | 2018-07-18 | 2018-12-11 | 南京航空航天大学 | A kind of preparation method of hypersensitivity plant ash base humidity sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53132981A (en) * | 1977-04-25 | 1978-11-20 | Massachusetts Inst Technology | Charge flow transistor and machine using same |
-
1981
- 1981-06-30 JP JP56102713A patent/JPS582731A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53132981A (en) * | 1977-04-25 | 1978-11-20 | Massachusetts Inst Technology | Charge flow transistor and machine using same |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6085358A (en) * | 1983-08-19 | 1985-05-14 | イ−エムアイ・リミテツド | Moisture sensitive element and manufacture thereof |
| JPH0240973B2 (en) * | 1983-08-19 | 1990-09-14 | Soon Ii Emu Ai Plc | |
| US8016002B2 (en) | 2005-11-29 | 2011-09-13 | Bridgestone Corporation | Sealing/pump-up device |
| CN108982592A (en) * | 2018-07-18 | 2018-12-11 | 南京航空航天大学 | A kind of preparation method of hypersensitivity plant ash base humidity sensor |
| CN108982592B (en) * | 2018-07-18 | 2020-12-01 | 南京航空航天大学 | Preparation method of high-sensitivity plant ash-based humidity sensor |
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