JPS582483B2 - Monolithic Crystal Rohaki Yosei Souchi - Google Patents
Monolithic Crystal Rohaki Yosei SouchiInfo
- Publication number
- JPS582483B2 JPS582483B2 JP50083944A JP8394475A JPS582483B2 JP S582483 B2 JPS582483 B2 JP S582483B2 JP 50083944 A JP50083944 A JP 50083944A JP 8394475 A JP8394475 A JP 8394475A JP S582483 B2 JPS582483 B2 JP S582483B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- electrode
- adjusted
- electrodes
- mcf
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 16
- 230000007246 mechanism Effects 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 description 7
- 235000014676 Phragmites communis Nutrition 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は、良好な真空蒸着を行ってモノリシツククリス
タルろ波器などの電極の共振周波数を調整するモノリシ
ツククリスタルろ波器用調整装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a tuning device for a monolithic crystal filter, which adjusts the resonant frequency of the electrodes of a monolithic crystal filter, etc. by performing good vacuum deposition.
モノリシツククリスタルろ波器（以下ＭＣＦと称する）
は、１枚の圧電結晶板の上面および下面に相対向する電
極対を複数個設けた、エネルギーとじこめ現象を利用す
るろ波器で、第１図は複数個の電極対を１次元的に配置
した電極勾の数が比較的少ないＭＣＦの例、第２図は複
数個の電極対を２次元的に配置した電極対の数が比較的
多いＭＣＦの例であり、１は水晶板、２は水晶板の上面
，下面に対向している電極、３は上面の電極２の端子、
４は下面の電極２の端子、５はセラミック板を示す。Monolithic crystal filter (hereinafter referred to as MCF)
is a filter that utilizes the energy confinement phenomenon, with multiple pairs of electrodes facing each other on the upper and lower surfaces of a single piezoelectric crystal plate. Figure 1 shows a one-dimensional arrangement of multiple pairs of electrodes. Figure 2 shows an example of an MCF with a relatively small number of electrode pairs, and Figure 2 shows an example of an MCF with a relatively large number of electrode pairs arranged two-dimensionally. Electrodes facing the top and bottom surfaces of the crystal plate, 3 is the terminal of electrode 2 on the top surface,
Reference numeral 4 indicates a terminal of the electrode 2 on the lower surface, and reference numeral 5 indicates a ceramic plate.
さて、従来のＭＣＦの共振周波数調整装置は、第１図の
ような１次元的配置の電極対の数が比較的少ないＭＣＦ
の周波数調整を行うためのものであり、そのシャッター
機構の構造を第３Ａ図、第３Ｂ図、第４図に示す。Now, the conventional MCF resonant frequency adjustment device is an MCF with a relatively small number of electrode pairs in a one-dimensional arrangement as shown in Fig. 1.
The structure of the shutter mechanism is shown in FIGS. 3A, 3B, and 4.
ここで、第３Ｂ図は第３Ａ図のＡ−Ａ’断面図である。Here, FIG. 3B is a sectional view taken along line A-A' in FIG. 3A.
第３Ａ図、第３Ｂ図において、１はＭＣＦの水晶板、２
はＭＣＦの電極、６は調整装置の本体、７はシャッター
用のガイド、８はシャッター、９は電極２の形状に対応
した小孔であり、シャッター８がガイド７に沿つてａ方
向へ移動することにより蒸着物が小孔９を通過して電極
２に付着して電極２の膜厚は増加し、シャッター８がｂ
方向へ移動することにより蒸着物の通過が遮断されて電
極２の膜厚はそのままの状態となる。In Figures 3A and 3B, 1 is an MCF crystal plate, 2
is the electrode of the MCF, 6 is the main body of the adjusting device, 7 is a guide for the shutter, 8 is the shutter, 9 is a small hole corresponding to the shape of the electrode 2, and the shutter 8 moves in the direction a along the guide 7. As a result, the deposit passes through the small hole 9 and adheres to the electrode 2, increasing the film thickness of the electrode 2, and the shutter 8 becomes b
By moving in this direction, the passage of the deposited material is blocked and the film thickness of the electrode 2 remains unchanged.
第４図において、１０はシャッター、１１はシャッター
１０の回転軸でありこの種のシャツター機構は、シャッ
ター１０が回転軸１１を支点とした開閉動作を行うこと
により上記の第３図の場合と同様に電極２の膜厚を変化
させるものである。In FIG. 4, 10 is a shutter, and 11 is a rotation axis of the shutter 10. This type of shutter mechanism is similar to the case in FIG. The thickness of the electrode 2 is changed accordingly.
すなわち、従来の周波数調整装置は上記のようなシャッ
ター機構により電極２の膜厚を変化させ共振周波数の調
整を行っていた。That is, the conventional frequency adjustment device adjusts the resonant frequency by changing the film thickness of the electrode 2 using the shutter mechanism as described above.
このように従来装置では各電極ごとに１個のシャツタ機
構を使用するため、第１図のような１次元的配置で電極
対の数が比較的少ないＭＣＦの周波数調整を行う場合は
問題がないが、第２図のような２次元的配置や電極対の
数が比較的多いＭＣＦの周波数調整を行う場合は、電極
対の数の増加に応じてシャッター機構数も増加するため
、装置の機構が非常に複雑となる欠点があった。In this way, the conventional device uses one shutter mechanism for each electrode, so there is no problem when adjusting the frequency of an MCF with a relatively small number of electrode pairs in a one-dimensional arrangement as shown in Figure 1. However, when adjusting the frequency of an MCF with a two-dimensional arrangement or a relatively large number of electrode pairs as shown in Figure 2, the number of shutter mechanisms increases as the number of electrode pairs increases, so the mechanism of the device The disadvantage was that it was very complicated.
また、従来のシャッター機構を２次元的配置の電極に対
応するように配置した装置を設計することは、シャッタ
ーの構造上非常に困難であった。Furthermore, it is extremely difficult to design a device in which a conventional shutter mechanism is arranged to correspond to two-dimensionally arranged electrodes due to the structure of the shutter.
そこで、２次元的配置のＭＣＦの周波数調整を行う場合
に、１次元的配置のシャッター機構を有する従来装置を
何度かの工程に分けて用いる方法も考えられるが、この
方法によると各電極の蒸着膜の均一性が保てないばかり
か、工程中に汚染が生じてＭＣＦの性能が劣化する欠点
があった。Therefore, when adjusting the frequency of a two-dimensionally arranged MCF, it is possible to use a conventional device having a one-dimensionally arranged shutter mechanism in several steps, but according to this method, each electrode Not only is the uniformity of the deposited film not maintained, but the performance of the MCF is degraded due to contamination during the process.
本発明は、従来技術の上記欠点を除去するもので、その
目的は、１次元的配置で比較的多数の電極対あるいは２
次元的配置の電極対を有するＭＣＦにおいても電極の共
振周波数調整を真空蒸着法により１工程で能率よく行う
ことができるモノリシツククリスタルろ波器用調整装置
を提供することにある。The present invention obviates the above-mentioned drawbacks of the prior art, and its purpose is to provide a relatively large number of electrode pairs or two electrodes in a one-dimensional arrangement.
An object of the present invention is to provide an adjustment device for a monolithic crystal filter that can efficiently adjust the resonant frequency of the electrodes in one step using a vacuum evaporation method even in an MCF having electrode pairs arranged in a dimensional arrangement.
この目的を満足する本発明の特徴は、調整対象物の各電
極とそれぞれ対応する複数の孔を設けた固定マスクと、
該固定マスクに微小空隙を介して近接し、該固定マスク
の各孔と孔軸を一致させることができる複数の孔を設け
た回転マスクと、該回転マスクを回転駆動する駆動機構
とを有し、前記回転マスクを回転駆動して前記回転マス
クの孔と前記固定マスクの各孔の孔軸とを順次一致させ
ることにより、上記一致した孔軸に対応する調整対象物
の電極に蒸着物を付着させ、該調整対象物の全電極の共
振周波数あるいは電極間結合量の調整を順次行うように
したことを特徴とするモノリシツククリスタルろ波器用
調整装置にある。A feature of the present invention that satisfies this objective is that a fixed mask is provided with a plurality of holes corresponding to each electrode of the object to be adjusted;
A rotating mask is provided with a plurality of holes that are close to the fixed mask through a micro gap and whose hole axes can be aligned with each hole of the fixed mask, and a drive mechanism that rotationally drives the rotating mask. , by rotationally driving the rotating mask to sequentially align the hole axes of the holes of the rotating mask and each hole of the stationary mask, deposits are attached to the electrodes of the adjustment target corresponding to the aligned hole axes; The adjusting device for a monolithic crystal filter is characterized in that the resonant frequency of all the electrodes of the object to be adjusted or the amount of coupling between the electrodes is adjusted sequentially.
以下図面により本発明の実施例を説明する。Embodiments of the present invention will be described below with reference to the drawings.
第５図は、本発明による装置の実施例で、２０は本装置
の本体、２１は回転マスク、２２はラチェット歯車、２
３は回転軸、２４は蒸着物の通過する孔で回転マスク２
１の円周上に数個配置されているもの、２５は回転マス
ク２１とラチェット歯車２２とを固定し孔２４を作成す
る場合の基準となる固定ピン、２６は調整すべきＭＣＦ
の保持部の挿入部、２７はラチェット歯車２２を駆動す
るソレノイドリレー、２８はソレノイドリレー２７のプ
ランジャー、２９．３０はリンク、３１はリンク２９．
３０とプランジャー２８とを結合するピン、３２はリス
ク２９．３０の回転軸、３３はリンク２９，３０の動作
範囲調整部、３４は調整用小伴型孔、３５はリンク３０
に固定されたピン、３６はプランジャー２８の復起用ス
プリング、３７は復起用スプリング３６のストッパ、３
８はラチェット爪、３９はソレノイドリレー２７の電源
入力端子、４０はソレノイドリレー２７の駆動電源、Ｃ
はラチェツウ歯車２２および回転マスク２１の回転方向
、ｄはリンク２９の駆動方向を示す。FIG. 5 shows an embodiment of the device according to the present invention, in which 20 is the main body of the device, 21 is a rotating mask, 22 is a ratchet gear, 2
3 is a rotating shaft, 24 is a hole through which the deposit passes, and the rotating mask 2
Several pieces are arranged on the circumference of 1, 25 is a fixing pin that fixes the rotating mask 21 and the ratchet gear 22 and serves as a reference when creating the hole 24, and 26 is an MCF to be adjusted.
27 is a solenoid relay that drives the ratchet gear 22, 28 is a plunger of the solenoid relay 27, 29.30 is a link, and 31 is a link 29.
30 is a pin that connects the plunger 28, 32 is the rotation axis of the risk 29 and 30, 33 is the operating range adjustment part of the links 29 and 30, 34 is a small hole for adjustment, 35 is the link 30
36 is a spring for restoring the plunger 28; 37 is a stopper for the restoring spring 36;
8 is a ratchet pawl, 39 is a power input terminal for the solenoid relay 27, 40 is a drive power source for the solenoid relay 27, C
indicates the rotation direction of the ratchet gear 22 and the rotation mask 21, and d indicates the driving direction of the link 29.
ラチェット歯車２２とリンク２９の先端部がかみ合って
いるため、ソレノイドリレー２７によりリンク２９が矢
印ｄ方向に移動すると回転マスク２１は矢印Ｃ方向に回
転し、蒸着物の通過する孔２４の移動が行われ、挿入部
２６内に設置されているＭＣＦの調整対象とする電極に
孔２４を合わせることができる。Since the ratchet gear 22 and the tip of the link 29 are engaged with each other, when the link 29 is moved in the direction of the arrow d by the solenoid relay 27, the rotating mask 21 is rotated in the direction of the arrow C, and the hole 24 through which the deposit passes is moved. Therefore, the hole 24 can be aligned with the electrode to be adjusted of the MCF installed in the insertion section 26.
即ち、回転マスク２１は、前回の調整完了後はあらかじ
め定めた初期位置に戻っており、ラチェット歯車２２の
歯数を単位として、回転マスク２１を初期位置からどれ
だけ回転駆動させればこの回転マスク２１の孔２４と固
定マスク４３の孔４２とが一致するかはあらかじめ設定
されている。That is, the rotating mask 21 has returned to the predetermined initial position after the previous adjustment is completed, and the rotating mask 21 has to be rotated from the initial position by how much the rotating mask 21 is rotated from the initial position based on the number of teeth of the ratchet gear 22. Whether the holes 24 of 21 and the holes 42 of the fixed mask 43 match is determined in advance.
なお、駆動電源４０からソレノイドリレー２７に送り込
まれるパルスの数に応じた歯数だけラチェット歯車２２
が回転せしめられることは周知の通りである。Note that the number of teeth in the ratchet gear 22 corresponds to the number of pulses sent from the drive power source 40 to the solenoid relay 27.
It is well known that the
第６図は、第５図のＢ−Ｂ’断面を詳細に表わした図で
、４１は第２図に示した１１個の電極対を有するＭＣＦ
，４２はＭＣＦ４１の電極２の形状に対応して加工され
た１１個の孔、４３は孔４２を有する固定マスク、４４
は孔４２が存在する範囲を切り抜いた絶縁板、４５は電
極２と孔４２との相互位置を決めるＭＣＦ４１の位置決
め用ガイド、４６は固定マスク４３、絶縁板４４、位置
決め用ガイド４５の保持部、４７はＭＣＦ４１の取付バ
ネ、４８は電極対の数に対応した１１個のリードリレー
、４９．５０はリードリレー４８の入力、出力端子、５
１ ．５２はリードリレー４８の駆動端子、５３はアー
ス板、６６．６７は共通アース線、５４は共振周波数測
定部、５５は電源部、５６．５７はスイッチ、５８は蒸
着防止カバー、５９は蒸着防止カバー５８に設けられた
蒸着物通過用の孔である。FIG. 6 is a detailed view of the BB' cross section in FIG. 5, and 41 is an MCF having 11 electrode pairs shown in FIG.
, 42 are 11 holes processed to correspond to the shape of the electrode 2 of the MCF 41, 43 is a fixed mask having the holes 42, 44
45 is a positioning guide for the MCF 41 that determines the mutual position of the electrode 2 and the hole 42; 46 is a holding portion for the fixed mask 43, the insulating plate 44, and the positioning guide 45; 47 is the mounting spring of MCF41, 48 is 11 reed relays corresponding to the number of electrode pairs, 49.50 is the input and output terminal of reed relay 48, 5
1. 52 is a drive terminal of the reed relay 48, 53 is a ground plate, 66.67 is a common ground wire, 54 is a resonance frequency measuring section, 55 is a power supply section, 56.57 is a switch, 58 is a vapor deposition prevention cover, 59 is a vapor deposition prevention This is a hole provided in the cover 58 for passing the deposit.
ＭＣＦ４１を本装置に取り付けるには、まず、保持部４
６の内部に固定マスク４３、絶縁板４４、位置決め用ガ
イド４５を重ね合わせ、ＭＣＦ４１をセラミック板５の
面が上方となるように位置決め用ガイド４５に沿って設
置し、取付バネ４７で固定する。To attach the MCF41 to this device, first attach the holding part 4.
A fixed mask 43, an insulating plate 44, and a positioning guide 45 are superimposed inside the ceramic plate 6, and the MCF 41 is installed along the positioning guide 45 with the surface of the ceramic plate 5 facing upward, and fixed with a mounting spring 47.
次に、ＭＣＦの端子３，４の入力側を１１個のリードリ
レーの入力端子４９に接続し、端子３，４の出力側を共
通アース線６６に接続し、１１個のリードリレー４８の
出力端子５０と共通アース線６７および駆動端子５１
．５２はスイッチ５６．５７を介して測定部５４、およ
び電源部５５に接続すれば良い。Next, the input sides of terminals 3 and 4 of the MCF are connected to the input terminals 49 of the 11 reed relays, the output sides of terminals 3 and 4 are connected to the common ground wire 66, and the output sides of the 11 reed relays 48 are connected. Terminal 50, common ground wire 67 and drive terminal 51
．． 52 may be connected to the measuring section 54 and the power supply section 55 via switches 56 and 57.
第７図は、本実施例の装置を真空蒸着機のガラス鐘内に
設置したもので、５８は蒸着防止カバー、６０はガラス
鐘、６１はヒーター、６２はシャッター、６３は本装置
の本体２０の支柱、６４はリード線の束、６５はガラス
鐘の外に位置する共振用波数測定部５４、電源部５５、
および駆動電源４０を示す。FIG. 7 shows the device of this embodiment installed in a glass bell of a vacuum evaporation machine, where 58 is a vapor deposition prevention cover, 60 is a glass bell, 61 is a heater, 62 is a shutter, and 63 is a main body 20 of the device. 64 is a bundle of lead wires, 65 is a resonance wave number measuring section 54 located outside the glass bell, a power supply section 55,
and a drive power source 40.
以上のような構成の共振周波数調整装置により、第２図
に示した１１個の電極対を有するＭＣＦ４１の周波数調
整を行うには、ＭＣＦ４１を前記の如く本装置の本体２
０に設置して結線を行った後、蒸着防止カバー５８をか
け、回転マスク２１の始点を設定し、ガラス鐘内を真空
にし、調整すべき電極に対応するスイッチ５６．５７を
投入して蒸着調整を行う。In order to adjust the frequency of the MCF 41 having 11 electrode pairs shown in FIG. 2 using the resonant frequency adjustment device configured as described above, the MCF 41 is connected to the main body 2 of the device as described above.
0 and connect the wires, put on the vapor deposition prevention cover 58, set the starting point of the rotating mask 21, make the inside of the glass bell a vacuum, and turn on the switches 56 and 57 corresponding to the electrodes to be adjusted to start vapor deposition. Make adjustments.
蒸着物はヒーター６１から開放されたシャッター６２を
通り、蒸着防止カバー５８の孔５９および回転マスク２
１の孔２４および固定マスク４３の孔４２を介して電極
２に到達し、これに付着する。The vapor deposit passes through the shutter 62 opened from the heater 61, and passes through the hole 59 of the vapor deposition prevention cover 58 and the rotating mask 2.
1 and the hole 42 of the fixed mask 43 to reach the electrode 2 and adhere thereto.
従って、調整すべき電極２に対応する固定マスク４３の
孔４２と回転マスク２１の孔２４とが重なるようにソレ
ノイドリレー２７を駆動して、ラチェット歯車２２を回
転させることにより、１１個の電極対を有するＭＣＦ４
１のすべての電極が順次調整できる。Therefore, by driving the solenoid relay 27 and rotating the ratchet gear 22 so that the hole 42 of the fixed mask 43 corresponding to the electrode 2 to be adjusted and the hole 24 of the rotating mask 21 overlap, the 11 electrode pairs can be adjusted. MCF4 with
All electrodes of 1 can be adjusted sequentially.
すなわち、ガラス鐘外のスイッチ操作により、上記のす
べての電極の共振周波数が同一真空中で簡単に能率良く
調整できる。That is, by operating a switch outside the bell, the resonance frequencies of all the electrodes mentioned above can be easily and efficiently adjusted in the same vacuum.
同様にして、固定マスク４３と回転マスク２１を交換す
ることにより、１次元的配置で電極対の数が多いＭＣＦ
や２次元的配置で電極対の数が多いＭＣＦについても共
振周波数の調整および共振子間結合量の調整を行うこと
が可能である。Similarly, by exchanging the fixed mask 43 and the rotating mask 21, an MCF with a large number of electrode pairs in a one-dimensional arrangement can be created.
It is also possible to adjust the resonance frequency and the amount of coupling between resonators even for an MCF having a large number of electrode pairs in a two-dimensional arrangement.
以上説明したように、本発明によるモノリシッククリス
タルろ波器用調整装置は、固定マスクと回転マスクとを
交換するのみで種々のモノリシッククリスタルろ波器に
ついて共振周波数の調整が容易に能率良く行える利点を
有すると共に、同一真空中ですべての共振周波数調整が
行えるため、調整工程中に汚染されて共振周波数の変動
あるいは共振尖鋭度の劣化が生じることがなく、均一な
電極を作成することができる利点がある。As explained above, the adjustment device for monolithic crystal filters according to the present invention has the advantage that the resonant frequencies of various monolithic crystal filters can be easily and efficiently adjusted by simply replacing the fixed mask and the rotating mask. In addition, since all the resonance frequencies can be adjusted in the same vacuum, there is no possibility of contamination during the adjustment process, causing fluctuations in the resonance frequency or deterioration of the resonance sharpness, and it is possible to create a uniform electrode. .
第１図は１次元的配置の電極を有するモノリシツククリ
スタルろ波器の一例を示す構造図、第２図は２次元的配
置の電極を有するモノリシッククリスタルろ波器の一例
を示す構造図、第３Ａ図は従来の調整装置のシャッター
機構部の一例を示す構造図、第３Ｂ図は第３Ａ図の断面
図、第４図は従来の調整装置のシャッター機構部の一例
を示す断面図、第５図は本発明による調整装置の一実施
例を示す構造図、第６図は第５図の一断面図、第７図は
本発明による調整装置を実際に動作させる状態の説明図
である。
１…水晶板、２…電極、３，４…端子、５…セラミック
板、６，２０…本体、７…ガイド、８，１０．６２…シ
ャッター、９…小孔、１１…回転軸、２１…回転マスク
、２２…ラチェット歯車、２３…回転軸、２４，４２．
５９…孔、２５…固定ピン、２６…挿入部、２７…ソレ
ノイドリレー、２８…プランジャー、２９．３０…リン
ク、３１，３５…ピン、３２…回転軸、３３…動作調整
部、３４…小判型孔、３６…復起用スプリング、３７…
ストツパ、３８…ラチェット爪、３９…電源入力端子、
４０…駆動電源、４１…モノリシッククリスタルろ波器
、４３…固定マスク、４４…絶縁板、４５…位置決めガ
イド、４６…保持部、４７…取付バネ、４８…リードリ
レー、４９，５０…入力、出力端子、５１ ．５２…駆
動端子、５３…アース板、５４…共振周波数測定部、５
５…電源部、５６．５７…スイッチ、５８…蒸着防止カ
バー、６０…ガラス鐘、６１…ヒーター、６３…支柱、
６４…リード線の束、６５…共振周波数測定部および電
源部、６６．６７…共通アース線。Fig. 1 is a structural diagram showing an example of a monolithic crystal filter having electrodes arranged one-dimensionally; Fig. 2 is a structural diagram showing an example of a monolithic crystal filter having electrodes arranged two-dimensionally; 3A is a structural diagram showing an example of a shutter mechanism section of a conventional adjustment device, FIG. 3B is a sectional view of FIG. 3A, FIG. 4 is a sectional view showing an example of a shutter mechanism section of a conventional adjustment device, and FIG. 6 is a sectional view of FIG. 5, and FIG. 7 is an explanatory diagram of a state in which the adjusting device of the present invention is actually operated. 1... Crystal plate, 2... Electrode, 3, 4... Terminal, 5... Ceramic plate, 6, 20... Main body, 7... Guide, 8, 10. 62... Shutter, 9... Small hole, 11... Rotating shaft, 21... Rotating mask, 22... Ratchet gear, 23... Rotating shaft, 24, 42.
59... Hole, 25... Fixing pin, 26... Insertion part, 27... Solenoid relay, 28... Plunger, 29.30... Link, 31, 35... Pin, 32... Rotating shaft, 33... Operation adjustment part, 34... Oval Mold hole, 36...Returning spring, 37...
Stopper, 38... Ratchet pawl, 39... Power input terminal,
40... Drive power supply, 41... Monolithic crystal filter, 43... Fixed mask, 44... Insulating plate, 45... Positioning guide, 46... Holding section, 47... Mounting spring, 48... Reed relay, 49, 50... Input, output Terminal, 51. 52... Drive terminal, 53... Earth plate, 54... Resonance frequency measuring section, 5
5...Power supply section, 56.57...Switch, 58...Vapor deposition prevention cover, 60...Glass bell, 61...Heater, 63...Strut,
64...Bundle of lead wires, 65...Resonance frequency measurement section and power supply section, 66.67...Common ground wire.
Claims (1)
複数の開口部を有しかつ各開口部が対応する各電極に対
向するように固定される固定マスクと、該固定マスクに
微小空隙を介して近接し、該固定マスクの所望の開口部
と開口位置を一致させることができる複数の開口部を設
けた回転マスクと、該回転マスクを回転駆動する駆動機
構とを有し、前記回転マスクを回転駆動して前記回転マ
スクの開口部のうちの一つと前記固定マスクの所望の開
口部とを一致させ両開口部の相互位置を固定することに
より、上記一致固定した開口部に対応ずる調整対象物の
電極に蒸着物を付着させ、該調調対象物の電極の共振周
波数あるいは電極間結合量の調整を行うようにしたこと
を特徴とするモノリシツククリスタルろ波器用調整装置
。1. A fixed mask having a plurality of openings each having a shape corresponding to the shape of each electrode of the object to be adjusted, and fixed so that each opening faces a corresponding electrode, and a a rotating mask provided with a plurality of openings that are close to each other and whose opening positions can match desired openings of the fixed mask; and a drive mechanism that rotationally drives the rotating mask; By rotationally driving one of the apertures of the rotary mask and a desired aperture of the fixed mask and fixing the mutual positions of both apertures, an adjustment target corresponding to the aperture that has been aligned and fixed is adjusted. 1. An adjustment device for a monolithic crystal filter, characterized in that the resonant frequency of the electrodes of the object to be adjusted or the amount of coupling between the electrodes is adjusted by attaching a vapor deposit to the electrodes of the object.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50083944A JPS582483B2 (en) | 1975-07-10 | 1975-07-10 | Monolithic Crystal Rohaki Yosei Souchi |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50083944A JPS582483B2 (en) | 1975-07-10 | 1975-07-10 | Monolithic Crystal Rohaki Yosei Souchi |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS528750A JPS528750A (en) | 1977-01-22 |
| JPS582483B2 true JPS582483B2 (en) | 1983-01-17 |
Family
ID=13816684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50083944A Expired JPS582483B2 (en) | 1975-07-10 | 1975-07-10 | Monolithic Crystal Rohaki Yosei Souchi |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS582483B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2611371A (en) * | 2020-10-08 | 2023-04-05 | Nvidia Corp | Datacenter cooling fluid quality analysis and mitigation |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4883341B2 (en) * | 2005-08-24 | 2012-02-22 | アイシン精機株式会社 | Seat reclining device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS509670A (en) * | 1973-05-30 | 1975-01-31 |
-
1975
- 1975-07-10 JP JP50083944A patent/JPS582483B2/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS509670A (en) * | 1973-05-30 | 1975-01-31 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2611371A (en) * | 2020-10-08 | 2023-04-05 | Nvidia Corp | Datacenter cooling fluid quality analysis and mitigation |
| US11991865B2 (en) | 2020-10-08 | 2024-05-21 | Nvidia Corporation | Datacenter cooling fluid quality analysis and mitigation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS528750A (en) | 1977-01-22 |
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