JPS58224429A - Thin film integrated head - Google Patents
Thin film integrated headInfo
- Publication number
- JPS58224429A JPS58224429A JP10683082A JP10683082A JPS58224429A JP S58224429 A JPS58224429 A JP S58224429A JP 10683082 A JP10683082 A JP 10683082A JP 10683082 A JP10683082 A JP 10683082A JP S58224429 A JPS58224429 A JP S58224429A
- Authority
- JP
- Japan
- Prior art keywords
- head
- integrated
- thin film
- integrated head
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は薄膜集積ヘッドに係り、さらに詳しくは、磁気
抵抗効果素子（以下ＭＲ素子と略称する）を用いた薄膜
集積ヘッドに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film integrated head, and more particularly to a thin film integrated head using a magnetoresistive element (hereinafter abbreviated as MR element).
記録密度を増大させ、周波数特性の向上のために薄膜磁
気ヘッドが広く採用されてきている。Thin film magnetic heads have been widely adopted to increase recording density and improve frequency characteristics.
例えば、この薄膜磁気ヘッドは、デジタルオーディオレ
コーダのように、多チャンネル化の要望に応えるために
、ヘッド素子の数が多く、ヘッド素子１個の集積度の高
いものが要求される磁気ヘッドとして最適なものとさ扛
ている。For example, this thin-film magnetic head is ideal for magnetic heads that require a large number of head elements and a high degree of integration per head element in order to meet the demands for multi-channel use, such as in digital audio recorders. It is being treated as something.
ところが、再生ヘッドについてみると、従来多く使用さ
れていた磁気誘導型の薄膜磁気ヘッドの再生電圧はヘッ
ドと磁気記録媒体間の相対速度に比例しているため、低
速度の場合、再生出力も低くなり、これに対応するには
コイルの巻き数を数百〜千ターンと多くする必要があり
、薄膜再生ヘッドとして使用するには実用上困難であっ
た。However, when looking at playback heads, the playback voltage of the magnetic induction type thin-film magnetic heads that have been widely used in the past is proportional to the relative speed between the head and the magnetic recording medium, so at low speeds, the playback output is also low. In order to accommodate this, it is necessary to increase the number of turns of the coil, from several hundreds to thousands of turns, which is practically difficult to use as a thin film reproducing head.
一方、このような薄膜磁気ヘッドに対応するために、ヘ
ッドと磁気記録媒体間の相対速度に関係のない磁束応答
型の磁気抵抗効果素子を用いた薄膜磁気ヘッド（以下Ｍ
Ｒヘッドと略称）が注目をあびてきている。On the other hand, in order to support such thin-film magnetic heads, thin-film magnetic heads (hereinafter M
(abbreviated as R head) is attracting attention.
このようなＭＲヘッドの一例を、第１図に拡大して示す
。An example of such an MR head is shown enlarged in FIG.
第１図において、符号１で示すものは基板で、子２の両
端は、同様な方法で基板上に形成された導電部３に接続
されている。In FIG. 1, the reference numeral 1 indicates a substrate, and both ends of the child 2 are connected to conductive parts 3 formed on the substrate in a similar manner.
以上のような構造を有するＭＲヘッドのＭＲ素子２に導
電部３を介して一定電流を四給しておくと、外部磁界が
接近した場合、ＭＲＲ子２の持つ抵抗値が変化し、電圧
変化として磁界の強さを取り出すことができる。この時
の再生出力電圧ΔＶはΔＶ−ΔＲ１で表わされる。ΔＲ
は外部磁界によるＭＲ素子の抵抗変化分で、■はＭＲ素
子に加えられた一定電流の値である。ＭＲＲ子２が外部
磁界によって抵抗変化を生じる変化率は、一般ｖＣＮｉ
−Ｆｅ 、 Ｎｉ−Ｃｏなどから成るＭＲ素子で１〜３
俸である。When a constant current is supplied to the MR element 2 of the MR head having the above structure through the conductive part 3, when an external magnetic field approaches, the resistance value of the MRR element 2 changes, causing a voltage change. The strength of the magnetic field can be extracted as . The reproduced output voltage ΔV at this time is expressed as ΔV−ΔR1. ΔR
is the change in resistance of the MR element due to the external magnetic field, and ■ is the value of the constant current applied to the MR element. The rate of change in resistance of MRR element 2 caused by an external magnetic field is generally vCNi
-1 to 3 MR elements made of Fe, Ni-Co, etc.
It's a salary.
従って、再生出力を大きく得るためにはＭＲ素子の絶対
抵抗値を大きくすることが必要である。Therefore, in order to obtain a large reproduction output, it is necessary to increase the absolute resistance value of the MR element.
ＭＲ素子の抵抗値Ｒは、一般に次の（１）式で表わされ
る。The resistance value R of the MR element is generally expressed by the following equation (1).
Ｒ−ρＭＲＸ□ ・・・・・・・・・・・・・ （１
）Ｘｔ
（１）式においてρＭＲはＭＲ素子の固有抵抗値、ｌは
ＭＲ素子の長さ、Ｗは幅、ｐ；；厚みを示す。第（１）
式からも明らかなように、Ｍ″ＲＲ累子抗値を大きくす
るためにはＭＲ素子の長さを大きくし、幅及び厚さを小
さくすることが必要である。R-ρMRX□ ・・・・・・・・・・・・・ (1
) No. (1)
As is clear from the equation, in order to increase the M″RR resistivity value, it is necessary to increase the length and decrease the width and thickness of the MR element.
（３）
しかし、ＭＲ素子の厚さは素子を薄膜技術で作成してい
るため、製作上あまり薄くはできず、ＭＲ素子の幅につ
いてはフ第１・エツチング技術上の制約があり、あ捷り
小さくすることができない。(3) However, the thickness of the MR element cannot be made very thin because the element is created using thin film technology, and the width of the MR element is limited by etching technology. cannot be made smaller.
また、ＭＲ素子の長さは再生ヘッドのトラック幅に相当
し、最近の磁気記録再生技術の高密度化のために多チャ
ンネル化し、高集積度が要求され、トラック幅を小さく
すること、す存わちＭＲ素子の長さを小さくすることが
要求されている。この結果、第（１）式から明らかなよ
うに、再生出力も小さくなってしまう欠点がある。In addition, the length of the MR element corresponds to the track width of the reproducing head, and as the recent high-density magnetic recording and reproducing technology requires multi-channel and high integration, it is necessary to reduce the track width. In other words, it is required to reduce the length of the MR element. As a result, as is clear from equation (1), there is a drawback that the reproduction output also becomes small.
さらに、ＭＲ素子を実装する場合には、導電部全フレキ
シブルなリード線で接合させ、プリアンプ回路部に接続
して再生出力信号を取る必要がある。Furthermore, when mounting an MR element, it is necessary to connect all the conductive parts with flexible lead wires and connect them to the preamplifier circuit section to obtain a reproduced output signal.
この結果、導電部、リード線の抗効値も無視できないも
のとなり、ｉ’Ｊ Ｓ／Ｎ比の悪い出力となってしまう
。そして、導電部やリード線が長くなってしまうために
、実際に再生信号を検出する場合、周囲のノイズの誘導
金堂ける原因となっている。As a result, the resistance value of the conductive portion and the lead wire cannot be ignored, resulting in an output with a poor i'J S/N ratio. Furthermore, since the conductive parts and lead wires become long, this becomes a cause of interference with surrounding noise when actually detecting a reproduced signal.
（４）
本発明は以上のような従来の欠点を除去するためになさ
れたもので、Ｓ／Ｎ比を向上させ、外部ノイズの誘導を
少なくできるように構成したＭＲ素子を用いた薄膜磁気
ヘッドを提供することを目的としている。(4) The present invention has been made to eliminate the above-mentioned drawbacks of the conventional art, and provides a thin film magnetic head using an MR element configured to improve the S/N ratio and reduce the induction of external noise. is intended to provide.
本発明においては、上記の目的を達成するために、同一
の基板上にＭＲ素子と半導体集積回路部を設けた構造を
採用した。In order to achieve the above object, the present invention employs a structure in which an MR element and a semiconductor integrated circuit section are provided on the same substrate.
以下、図面に示す実施例に基づいて、本発明の詳細な説
明する。Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
第２図において符号４で示すものは絶縁性基板で、ガラ
ス、石英、アルミナ、フェライトなどから形成される。The reference numeral 4 in FIG. 2 is an insulating substrate made of glass, quartz, alumina, ferrite, or the like.
符号５で示すものは集積ヘッド部で、シリコン基板上に
ＭＲ素子及び集積回路部が形成されている。Reference numeral 5 designates an integrated head section in which an MR element and an integrated circuit section are formed on a silicon substrate.
この集積ヘッド部５は基板４上に固定され、その先端部
、すなわち磁気記録媒体側は、ＭＲ累壬子部分保護する
ための絶縁性基板６によって覆われている。この絶縁性
基板６もガラス、石英、アルミナ、フェライトなどから
成る。This integrated head section 5 is fixed on a substrate 4, and its tip end, that is, the side toward the magnetic recording medium, is covered with an insulating substrate 6 for protecting the MR head. This insulating substrate 6 is also made of glass, quartz, alumina, ferrite, or the like.
一方、符号７で示すものは集積ヘッド部５に、形成され
た集積回路と外部回路とを電気的に接続するためのリー
ド線で、集積回路部との間はワイヤ８をボンディングし
て電気的な結合がはかられている。On the other hand, a lead wire 7 is used to electrically connect the integrated circuit formed in the integrated head section 5 to an external circuit, and a wire 8 is bonded to the integrated circuit section for electrical connection. A strong bond is established.
第３図は集積ヘッド部５を一部拡大して示すもので、図
中第１図と同一部分には同一符号が付されている。FIG. 3 shows a partially enlarged view of the collecting head section 5, and the same parts as in FIG. 1 are given the same reference numerals.
第３図において、符号９で示すものは電極部で、入力側
端子となる部分である。また符号１０で示すものは集積
回路の出力側電極部である。In FIG. 3, the reference numeral 9 is an electrode portion, which is a portion that becomes an input terminal. Further, the reference numeral 10 indicates an output side electrode portion of the integrated circuit.
第３図においてＸ−Ｘ線とＹ−Ｙ線で挾まれた部分が集
積回路部分で、第４図にその一部であるプリアンプ回路
の等価回路図が示されている。第４図において符号１１
で示す部分がＭＲＲ子部で、その両端の符号Ａ、Ｂで示
す部分はそれぞれ第３図に示す電極部９及び導電部３に
相当する。In FIG. 3, the part between the lines X-X and Y-Y is the integrated circuit part, and FIG. 4 shows an equivalent circuit diagram of the preamplifier circuit that is part of the integrated circuit part. Reference numeral 11 in Figure 4
The part indicated by is the MRR child part, and the parts indicated by symbols A and B at both ends correspond to the electrode part 9 and the conductive part 3 shown in FIG. 3, respectively.
そして、ＭＲＲ子部１１の抵抗変化匹よって生じる電圧
変化はトランジスタＴ、、Ｔ２によって検出され、ｌ−
ランシスタＴ３〜Ｔ、によって増幅され、出力ＯＵＴと
して取り出され、外部回路へと送られる。The voltage change caused by the resistance change of the MRR child section 11 is detected by the transistors T, , T2, and l-
It is amplified by the run transistors T3 to T, taken out as an output OUT, and sent to an external circuit.
次に、このような構造を有する集積ヘッド部５の製造方
法の概略について述べる。Next, an outline of a method for manufacturing the integrating head section 5 having such a structure will be described.
集積ヘッド部５のプリアンプは、一般のＩＣ製造プロセ
スと同じで、電極部９，１０以外をリン酸ガラス等の絶
縁層で電気的に保護した状態にしておく。The preamplifier of the integrated head section 5 is the same as the general IC manufacturing process, and the parts other than the electrode parts 9 and 10 are electrically protected with an insulating layer such as phosphate glass.
次に、その上にパーマロイ、 Ｎｉ／Ｃｏ合金等から
成るＭＲ素子部及びアルミ・銅・金などから成る導電部
をスパッタリング法、蒸着法、メッキ法などにより形成
し、フォトエツチング法により導電部３．電極部９．Ｍ
Ｒ素子２′ｆｒ：選択エツチングにより形成すればよい
。Next, an MR element part made of permalloy, Ni/Co alloy, etc. and a conductive part made of aluminum, copper, gold, etc. are formed thereon by sputtering, vapor deposition, plating, etc., and the conductive part 3 is formed by photoetching. ．． Electrode part 9. M
R element 2'fr: may be formed by selective etching.
本実施例は以上のよ゛うに構成されているため、ＭＲ素
子とプリアンプ集積回路部が同一シリコン基板上に形成
され、両者間の距離を短縮することができ、再生信号の
Ｓ／Ｎ比を向上させることができる。Since the present embodiment is configured as described above, the MR element and the preamplifier integrated circuit section are formed on the same silicon substrate, and the distance between them can be shortened, and the S/N ratio of the reproduced signal can be improved. can be improved.
（７）
ＭＲヘッド全使用する場合、ＭＲ素子とプリアンプを接
続する信号線に誘導磁界が交差することにより発生する
ノイズが問題となるが、このノイズの大きさは信号線が
形成する閉ループの断面積に比例する。(7) When using all MR heads, noise generated by the induced magnetic field crossing the signal line connecting the MR element and preamplifier becomes a problem, but the magnitude of this noise is due to the break in the closed loop formed by the signal line. Proportional to area.
このため、従来例ではＭＲ素子と離れた位置にあるプリ
アンプとをフレキシブルリード線のようなリード線によ
って接続していたため、前述した閉ループの断面積が大
きくなり、ノイズ量も多かった。For this reason, in the conventional example, the MR element and the preamplifier located at a remote location were connected by a lead wire such as a flexible lead wire, resulting in a large cross-sectional area of the aforementioned closed loop and a large amount of noise.
これに反し、本発明になる薄膜磁気ヘッドでは、ＭＲ素
子とプリアンプの部分が極めて近接して配置されるため
、両者間を結ぶ信号線が形成する閉ループの断面積はほ
とんど無視でき、ノイズ量も著しく減少させることがで
きる。On the other hand, in the thin-film magnetic head of the present invention, the MR element and preamplifier are arranged extremely close to each other, so the cross-sectional area of the closed loop formed by the signal line connecting them can be almost ignored, and the amount of noise can also be reduced. can be significantly reduced.
一方、プリアンプの出力端から次段の入力端までは従来
通りにリード線で接続することになり、この部分におい
て誘導磁界によるノイズを発生するが、本発明構造にお
いては信号成分がプリアンプにより増幅された後である
ため、この部分にお（８）
いて従来と同量のノイズ量が発生しても、あらかめ信号
が増幅されている分だけＳ／Ｎ比の向上かはかれる。On the other hand, the output end of the preamplifier is connected to the input end of the next stage using a lead wire as before, and noise is generated in this part due to the induced magnetic field, but in the structure of the present invention, the signal component is amplified by the preamplifier. Therefore, even if the same amount of noise occurs in this part (8) as in the conventional case, the S/N ratio will be improved by the amount that the signal has been amplified.
また、ＭＲ素子から信号を取り出す導電部及びリード線
の抵抗はノイズの発生源となるが、このノイズについて
も従来構造ではプリアンプの前段の信号電圧の小さい段
階で発生していたため、Ｓ／Ｎ比の低下を招いていた。In addition, the resistance of the conductive parts and lead wires that extract signals from the MR element is a source of noise, but in the conventional structure, this noise also occurred at a stage where the signal voltage was small before the preamplifier, so the S/N ratio was was causing a decline in
ところが、本発明構造においては、リード線部分の抵抗
がプリアンプの後段に位置するため、これによるノイズ
全無視して考えることができる。However, in the structure of the present invention, since the resistance of the lead wire portion is located at the subsequent stage of the preamplifier, the noise caused by this can be completely ignored.
さらに、従来構造においては、ｎ個のＭＲ素子を用いた
場合、接続端子数は２０個必要であり、ＭＲ素子からプ
リアンプ部へフレキシブルリード線で接続する場合にも
２０本のリード線が必要である。Furthermore, in the conventional structure, when n MR elements are used, 20 connection terminals are required, and 20 lead wires are also required when connecting the MR element to the preamplifier section using flexible lead wires. be.
これに対し、本発明構造ではプリアンプ回路の共通の駆
動電圧印加端子１本、共通アース端子１本、出力端子４
本の合計ｎ＋２本の端子数ですむ。In contrast, in the structure of the present invention, the preamplifier circuit has one common drive voltage application terminal, one common ground terminal, and four output terminals.
The total number of terminals is n+2.
この結果、実装されるＭＲ素子の数が２個以上に増大す
るほど端子数は少なくてすむため、本発明構造のほうが
有利になり、上述したＳ／Ｎ比の改善ばかりではなく、
小型化もはかれる。As a result, as the number of MR elements mounted increases to two or more, the number of terminals is reduced, so the structure of the present invention becomes more advantageous, and not only improves the S/N ratio as described above.
It can also be made smaller.
以上の説明から明らかなように、本発明によれば、同一
のンリコン基板上に磁気抵抗効果素子と集積回路部分を
設けた構造を採用しているため、ノイズの誘導を少なく
でき、Ｓ／Ｎ比を向」ニさせることができると共に、小
型化が可能で高密度実装を実現することができる。As is clear from the above description, according to the present invention, since a structure in which a magnetoresistive element and an integrated circuit part are provided on the same silicon substrate is adopted, noise induction can be reduced and S/N It is possible to improve the ratio, reduce the size, and realize high-density packaging.
第１図は従来構造を説明する一部拡大平面図、第２図〜
第４図は本発明の一実施例を説明するもので、第２図は
薄膜磁気ヘッドの側面図、第３図２・・・ＭＲ素子
３・・・導電部５・・・集積ヘッド部 １・・・
フレキシブルリード線９．１０・・・電極
第４図
手続補正書（自発）
昭和５７年 ９月 １日
特許庁長官殿
■、事件の表示
昭和 ５７ 年 特許願 第 １０６８３０ 号２、
発明の名称
薄膜集積ヘッド
３、補正をする者
事件との関係 特許出願人
名 称 （１００） キャノン株式会社４
、代理人 電話 ０３ （２６８）２４８１
（子０６、補正の内容
明細書第９頁第１９行目の「出力端子４本」を「出力端
子ｎ本」に訂正する。Figure 1 is a partially enlarged plan view explaining the conventional structure, Figures 2-
FIG. 4 explains one embodiment of the present invention, FIG. 2 is a side view of a thin film magnetic head, and FIG. 3 is a side view of a thin film magnetic head.
3... Conductive part 5... Integration head part 1...
Flexible lead wire 9.10...Electrode Figure 4 Procedural amendment (voluntary) September 1, 1980 Mr. Commissioner of the Japan Patent Office■, Indication of the case 1982 Patent Application No. 106830 2,
Name of the invention Thin film integration head 3, relationship to the case of the person making the amendment Patent applicant name (100) Canon Co., Ltd. 4
, agent telephone 03 (268) 2481
(Child 06, correct "4 output terminals" on page 9, line 19 of the specification of correction to "n output terminals."
Claims (1)
号検出および増幅用の集積回路部とを形成しヘッドに組
み込んだことを特徴とする薄膜集積ヘッド。A thin film integrated head characterized in that a magnetoresistive element and an integrated circuit section for detecting and amplifying magnetic signals thereof are formed on the same silicon substrate and incorporated into the head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10683082A JPS58224429A (en) | 1982-06-23 | 1982-06-23 | Thin film integrated head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10683082A JPS58224429A (en) | 1982-06-23 | 1982-06-23 | Thin film integrated head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58224429A true JPS58224429A (en) | 1983-12-26 |
| JPH0474766B2 JPH0474766B2 (en) | 1992-11-27 |
Family
ID=14443663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10683082A Granted JPS58224429A (en) | 1982-06-23 | 1982-06-23 | Thin film integrated head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58224429A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5559051A (en) * | 1994-10-18 | 1996-09-24 | International Business Machines Corporation | Process for manufacturing a silicon chip with an integrated magnetoresistive head mounted on a slider |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4966119A (en) * | 1972-09-05 | 1974-06-26 | ||
| JPS4968716A (en) * | 1972-10-31 | 1974-07-03 | ||
| JPS49112610A (en) * | 1973-02-26 | 1974-10-26 | ||
| JPS5150498U (en) * | 1974-10-16 | 1976-04-16 | ||
| JPS51134615A (en) * | 1975-05-16 | 1976-11-22 | Seiko Epson Corp | Integrated magnetic head |
| JPS52138711U (en) * | 1976-04-16 | 1977-10-21 | ||
| JPS5552620U (en) * | 1978-10-02 | 1980-04-08 |
-
1982
- 1982-06-23 JP JP10683082A patent/JPS58224429A/en active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4966119A (en) * | 1972-09-05 | 1974-06-26 | ||
| JPS4968716A (en) * | 1972-10-31 | 1974-07-03 | ||
| JPS49112610A (en) * | 1973-02-26 | 1974-10-26 | ||
| JPS5150498U (en) * | 1974-10-16 | 1976-04-16 | ||
| JPS51134615A (en) * | 1975-05-16 | 1976-11-22 | Seiko Epson Corp | Integrated magnetic head |
| JPS52138711U (en) * | 1976-04-16 | 1977-10-21 | ||
| JPS5552620U (en) * | 1978-10-02 | 1980-04-08 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5559051A (en) * | 1994-10-18 | 1996-09-24 | International Business Machines Corporation | Process for manufacturing a silicon chip with an integrated magnetoresistive head mounted on a slider |
| US5587857A (en) * | 1994-10-18 | 1996-12-24 | International Business Machines Corporation | Silicon chip with an integrated magnetoresistive head mounted on a slider |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0474766B2 (en) | 1992-11-27 |
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