JPS58205842A - Simultaneous measurement of component ratio and film thickness for 2-component alloy film - Google Patents
Simultaneous measurement of component ratio and film thickness for 2-component alloy filmInfo
- Publication number
- JPS58205842A JPS58205842A JP57089301A JP8930182A JPS58205842A JP S58205842 A JPS58205842 A JP S58205842A JP 57089301 A JP57089301 A JP 57089301A JP 8930182 A JP8930182 A JP 8930182A JP S58205842 A JPS58205842 A JP S58205842A
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- fluorescent
- component
- component ratio
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/076—X-ray fluorescence
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はケイ光Ｘｆｉ！を検出することによって、二成
分合金膜の成分比と膜厚を同時に測定する方法ＶＣ関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is based on the Keiko Xfi! The present invention relates to a method VC for simultaneously measuring the component ratio and film thickness of a binary alloy film by detecting .
従来二成分合金の膜厚を測定する場合、その膜と同じ成
分を持つ標準試料ｒ（Ｊ：つて装置を較正し試料厚を測
定するか、あるいは合金の成分比を仮定して純金欄の場
合の厚さ標準試料から得られる較正曲線を補正する方法
が用いられてきた。しかしこれらの方法では、合金比が
違った場合正確な測定ができないという欠点があった。Conventionally, when measuring the film thickness of a two-component alloy, it is necessary to calibrate the device and measure the sample thickness using a standard sample r (J), which has the same components as the film, or to measure the sample thickness by assuming the alloy's component ratio. Methods have been used to correct calibration curves obtained from standard samples with a thickness of 100%.However, these methods have the disadvantage that accurate measurements cannot be made when the alloy ratio is different.
本発明は合金膜１ｖの測定に訃いて合金膜の成分比を同
時罠測定することによって合金膜厚の較正曲線を補正し
、上記の欠点を除去する方法である。The present invention is a method for correcting the calibration curve of the alloy film thickness by measuring the component ratio of the alloy film simultaneously with the measurement of the alloy film 1v, thereby eliminating the above-mentioned drawbacks.
この方法はハンダなどのような二成分合金の測定にとく
え有効である。例えば、合金膜から放射されるケイ光Ｘ
線強度が飽和値に達するに十分な厚さを持った元素Ａと
元素Ｂとから成る二成分合金膜、放射＃ｌ！ＩＬよって
励起され放射される元素人のケイ光Ｘ線強（ＩＪ−’
Ｉ Ａ ＯＯ（Ｗ Ａ ）は（Ａ）式で表わされる。This method is especially effective for measuring binary alloys such as solder. For example, fluorescence X emitted from an alloy film
A binary alloy film consisting of element A and element B having a thickness sufficient for the line intensity to reach a saturation value, radiation #l! Strong fluorescent X-rays of elemental humans excited and emitted by IL (IJ-'
I A OO(W A ) is represented by formula (A).
”””Ａ）７ｒ、Ａ（Ｊ＊）ＷＡ＋ａＢ（λＢ）（１−
ＷＡ）十より（λＡ）−＝ （Ａ）ここでＷＡは元素Ａ
の成分比、ｋＡ（λＡ）は元素人のケイ光Ｘ線に対する
元素Ａの吸収係数。"""A)7r, A(J*)WA+aB(λB)(1-
WA) From 10 (λA) −= (A) Here, WA is element A
The component ratio of kA (λA) is the absorption coefficient of element A for fluorescent X-rays.
μＢ（λＡ）は元素Ａのケイ元Ｘ線に対する元素Ｂの吸
収係数、 Ｉｂ（λＡ）はバックグランド、 ｋＡは
定数とする。μB (λA) is the absorption coefficient of element B for silicon element X-rays of element A, Ib (λA) is the background, and kA is a constant.
−ａ−（ｓ’＋ ｋＡ（λＡ）＝ ｂ−＝ｆａｌｔ
ＩＢてＴ弓−ゝ μＢ（λＡ）
とおくと （Ｎ式はつぎの式のように変形できる同様に
元素Ｂのケイ元Ｘ線強度よりの（ＷＡ）は（Ｅ）式で表
わされる。-a-(s'+kA(λA)=b-=falt
Letting IB and T bow - μB (λA), (N formula can be transformed as shown below. Similarly, (WA) from the silicon element X-ray intensity of element B is expressed by formula (E).
ここでｋＡ（λＢ）は元素Ｂのケイ光Ｘｉに対する元素
Ａの吸収係数、μＢ（λＢ）は元素Ｂのケイ元Ｘ線に対
する元素Ｂの吸収係数、より（λＢ）はバックグランド
、ｋＢは定数である。Here, kA (λB) is the absorption coefficient of element A for the fluorescence Xi of element B, μB (λB) is the absorption coefficient of element B for silicon X-rays, y (λB) is the background, and kB is a constant. It is.
とおくとｆ棟式ｔＪつぎの工うｒ（変形できる。Then, the f-building type tJ the next construction r (can be transformed.
したがってその合金膜厚から放射されるケイ元Ｘ線強度
が飽和値に達するに十分な厚さをもった元素人と元素）
３とから成る成分比は既知の標準試料の元素Ａお６［び
元ｉｐ・のケイ”／ｆ： Ｘ １ｌｒｉ！強度を測定し
くＡ）式お工び（ｎ）式ｒ（代入することに１って、連
立方程式１りａ、、 ｂ、’ Ｉｂ（λＡ ）、
ａ’、 ｂ’、 １： ｂ（λＢ）を計算で算出するこ
とができる。このとき標準試料は５種以上必要とする。Therefore, the thickness of the alloy film is sufficient for the intensity of silicon element X-rays emitted from the thickness to reach the saturation value.
The component ratio consisting of 3 and 3 is the element A of the known standard sample. 1 is the simultaneous equation 1 a, b, 'Ib(λA),
a', b', 1: b(λB) can be calculated by calculation. At this time, five or more types of standard samples are required.
なお標準試料が４種類以上のとき＃′ｉ：最小二乗法が
適用できる。Note that when there are four or more types of standard samples, #'i: the least squares method can be applied.
ところで二成分合金Ｉｌｌ Ｗ、おいて膜厚ｔと元素人
のケイ元Ｘ線強麿丁＾の関係は市電をρ、バックグラン
ドをＩＡＩ） とすると（１）式で表わせる。By the way, in the binary alloy IllW, the relationship between the film thickness t and the elemental silicon element X-ray intensity can be expressed by equation (1), where ρ is the streetcar and IAI is the background.
工Ａ：ｌ：（１：＊、ｗ（ＷＡ）−ｒ＾ｂ）（１−ｅＸ
ｐ−（ＷＡ／ｊＡ（λム）十（１−ＷＡ）μＢ（λム）
）ρｔ〕十エムｂ・・川・山 （１）同様に、膜厚ｔと
元素Ｂのケイ光Ｘ線強度ＩＢの関係はバックグランドを
よりｂとすると、（Ｊ）式で表わせる。Engineering A:l:(1:*,w(WA)-r^b)(1-eX
p-(WA/jA(λmu) 1-WA)μB(λmu)
) ρt] 10<em>b...River/Mountain (1) Similarly, the relationship between the film thickness t and the fluorescent X-ray intensity IB of element B can be expressed by equation (J), assuming that the background is b.
工ｓ＝（工ｎの（ＷＡ）−よりｂ）（１−ｅｘｐ−（Ｖ
ＡｅμＡ（λＢ）＋（１−ＷＪμＢ（λ−））ρｔ）＋
ｒ、ｎｂ・・・・・曲（、Ｔ）（Ｇ１式よりｋＡ（λＢ
）−石、μＢ（λＢ） であるから、これら１（Ｉ）
＋ （Ｊ）式に代入すると、それぞれ次のようになる。s = (b from (WA) of eng n) (1-exp-(V
AeμA(λB)+(1-WJμB(λ-))ρt)+
r, nb... Song (, T) (kA (λB
)-stone, μB(λB), so these 1(I)
+ (J) When substituted into the equation, the results are as follows.
１Ａ＝（工Ａ（Ｘ）（ＷＡ）−エ＊ｂ）（ｉ −６ｔｗ
Ａ九（１−ＷＡ））ｋＡ（λム）ρｔ〕＋■ムｂ ・・
・・・・・・・・・・ ＠）Ｉ ｎ ＝ （、Ｂｏｏ（
Ｗリーより ｂ ）（１−ｅ ’ Ｂ汁（１−ｗム））
μＢ（λＮ３）ρｔ〕＋工Ｈｂ ・・・・・・・・
・・・・ （Ｌ）（Ｋ） 、 （Ｌ）式において、ａ、
ｂ、より（λム）ｔ ”？ ”１５−
Ｉｂ（λＢ）１丁ムｂ、よりす、μム（λム）、μＢ（
λＢ）が分かれば、（Ｋ） 、 （Ｌ）式の連立方程式
よりｔおよびＷＡを求めることができる。ここでａ、ｂ
、Ｉｂ（λ＾）ｌ ”ｌ ”？Ｉｂ（λＢ）の値は、前
述の方法によって求めることができる。ｋＡ（λム）お
よびμＢ（λＢ）は、純金属人および純金属Ｂのそれぞ
れ６コ以上の厚さの標準試料から放射されるケイ光Ｘ線
強度を測定し、計算することによって求めることができ
る。1A=(A(X)(WA)-E*b)(i-6tw
A9(1-WA))kA(λmu)ρt]+■mub...
・・・・・・・・・ @)I n = (, Boo(
From W Lee b) (1-e' B soup (1-w mu))
μB (λN3) ρt] + engineering Hb ・・・・・・・・・
...(L)(K), In formula (L), a,
b.
If λB) is known, t and WA can be determined from the simultaneous equations (K) and (L). Here a, b
, Ib(λ^)l “l”? The value of Ib(λB) can be determined by the method described above. kA (λμ) and μB (λB) can be obtained by measuring and calculating the fluorescent X-ray intensity emitted from standard samples of pure metal B and pure metal B, each of which has a thickness of 6 or more. can.
以下、その理由を説明する。純金属から放射されるケイ
光Ｘ線強度工と厚さＸの関係は、バックグランドを１０
．密度をρ′ とすると、（Ｍ）式で表わされる。The reason for this will be explained below. The relationship between the fluorescent X-ray intensity emitted from pure metal and the thickness
．． Letting the density be ρ', it is expressed by equation (M).
■＝ （ｌｃｏ−工◎）（１−ｅ−μｐＸ）＋１ｏ −
−−（Ｍ）厚さの違った３個以上の淳さ既知試料のケイ
光Ｘ線強度を測定すること尤よって、連立方程式よシμ
を算出することができる。このようにして、純金属人お
よび純金１ｔ４１３の標準試料から、３人（λム）およ
びμＢ（λＢ）を求めることができる。■= (lco-engine ◎) (1-e-μpX)+1o -
--(M) In addition to measuring the fluorescent X-ray intensity of three or more samples of known thickness with different thicknesses, the simultaneous equations and
can be calculated. In this way, from the standard samples of pure metal and pure gold 1t413, it is possible to obtain 3 people (λum) and μB (λB).
またこのとき、十分厚い厚さをもった元素Ａ上に、厚さ
の違った元素Ｂの皮膜を施したものを標 ６−
準試料として元素Ａおよび元素Ｂのケイ光Ｘ線強度を測
定することによって、μム（λＡ）および７１ Ｂ （
λＢ）を算出することもできる。Also, at this time, measure the fluorescent X-ray intensities of element A and element B by using a sufficiently thick layer of element A with a film of element B of different thickness as a standard sample. By this, μm (λA) and 71 B (
λB) can also be calculated.
つぎに、この方法を実現するための装置の構成の一実施
例を示す。この装置は、励起線源としてのＸ線管球とＸ
線検出器としての比例計数管と試料台と波高弁別器とス
ケーラ−タイマーと演算装置と表示装置より構成される
。励起線源として、ラジオアイソトープおよびＸ線検出
器として半導体検出器を用いることもできる。また波高
弁別器としてマルチンヤンネルアナライザーを用いれば
、第１金属と第２金属のケイ光Ｘ線を同時に測定するこ
とができ、測定を迅速に行なうことができるが、シング
ルチャンネルアナライザーを用いることによってもシー
ケンシャルに第１金属と第２金属のケイ光Ｘ線を測定す
ることができ、目的を達成できる。Next, an example of the configuration of an apparatus for realizing this method will be shown. This device uses an X-ray tube as an excitation source and
It consists of a proportional counter tube as a line detector, a sample stage, a pulse height discriminator, a scaler-timer, an arithmetic unit, and a display device. As excitation radiation source it is also possible to use radioisotopes and semiconductor detectors as X-ray detectors. Furthermore, if a multi-channel analyzer is used as a pulse height discriminator, it is possible to simultaneously measure the fluorescent X-rays of the first metal and the second metal, and the measurement can be carried out quickly. Also, the fluorescent X-rays of the first metal and the second metal can be measured sequentially, and the purpose can be achieved.
本発明によれば、上述のごとくケイ光Ｘ線強度を測定す
ることＶこよって二成分合金膜の成分比と厚さを同時に
求めることができる。According to the present invention, by measuring the fluorescent X-ray intensity as described above, the component ratio and thickness of the binary alloy film can be determined simultaneously.
図面は、二成分合金膜の成分比と厚さを同時に測定する
ための一実施例を示す。
図中、（１）はＸ線管 （２）は励起Ｘ線（３）は
試料台 （４）は比例計数管（６）に波高弁別器
（７）はスケーラ−タイマー（８）は演算装置 （９
）は表示装置を示す。
以 上
出願人 株式会社 第二梢工舎
代理人 弁理士 最上 務The drawing shows one embodiment for simultaneously measuring the component ratio and thickness of a binary alloy film. In the figure, (1) is the X-ray tube (2) is the excited X-ray (3) is the sample stage (4) is the proportional counter (6) and the pulse height discriminator
(7) is the scaler and timer (8) is the arithmetic unit (9
) indicates a display device. Applicant Daini Kozue Kosha Co., Ltd. Agent Patent Attorney Tsutomu Mogami
Claims (1)
＠属からなる二成分合金の成分比お・；び膜厚を測定す
る方法において第１元素および第２金鳩のケイｔＸ線強
度をＸ線検出器で検出し、厚さの各々異なる３個以上の
純粋の第１金属の厚さを有する標準試料と、厚さの各々
異なる６個以上の純粋の第２金属の厚さを有する標準試
料と、ケイ光ＸｆＲが飽和する九十分な埠さをもった３
個以上の成分比を有する標準試料のケイ光Ｘ線強度を測
定した結果求めた定数を用いて、□試料中の前記各金慎
から放射されるケイ光Ｘｉ強度を測定することに工り二
成分合金の成分比と厚さを演算測定することを特徴とす
る二成分合金膜の成分比と膜厚の同時測定法。The first metal and the second metal are detected by the trap to detect the fluorescence
In the method of measuring the component ratio and film thickness of a binary alloy consisting of the genus, the X-ray intensity of the first element and the second metal alloy is detected with an X-ray detector, and three alloys with different thicknesses are detected. A standard sample having a thickness of a pure first metal of 6 or more different thicknesses, a standard sample having a thickness of 6 or more pure second metals, each having a different thickness, and a 90-minute barrier where the fluorescence XfR is saturated. Sato 3
Using the constant obtained as a result of measuring the fluorescent X-ray intensity of a standard sample having a component ratio of A method for simultaneously measuring the component ratio and film thickness of a two-component alloy film, characterized by calculating and measuring the component ratio and thickness of the component alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57089301A JPS58205842A (en) | 1982-05-26 | 1982-05-26 | Simultaneous measurement of component ratio and film thickness for 2-component alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57089301A JPS58205842A (en) | 1982-05-26 | 1982-05-26 | Simultaneous measurement of component ratio and film thickness for 2-component alloy film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58205842A true JPS58205842A (en) | 1983-11-30 |
Family
ID=13966842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57089301A Pending JPS58205842A (en) | 1982-05-26 | 1982-05-26 | Simultaneous measurement of component ratio and film thickness for 2-component alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58205842A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60202339A (en) * | 1984-03-27 | 1985-10-12 | Sumitomo Metal Ind Ltd | X-ray fluorescence analysis method |
| US4959848A (en) * | 1987-12-16 | 1990-09-25 | Axic Inc. | Apparatus for the measurement of the thickness and concentration of elements in thin films by means of X-ray analysis |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5429843A (en) * | 1977-08-10 | 1979-03-06 | Nippon Steel Corp | Controlling method for composition and thickness of plated multicomponent alloy films |
-
1982
- 1982-05-26 JP JP57089301A patent/JPS58205842A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5429843A (en) * | 1977-08-10 | 1979-03-06 | Nippon Steel Corp | Controlling method for composition and thickness of plated multicomponent alloy films |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60202339A (en) * | 1984-03-27 | 1985-10-12 | Sumitomo Metal Ind Ltd | X-ray fluorescence analysis method |
| US4959848A (en) * | 1987-12-16 | 1990-09-25 | Axic Inc. | Apparatus for the measurement of the thickness and concentration of elements in thin films by means of X-ray analysis |
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