JPS58204194A - Nickel electroplating method - Google Patents
Nickel electroplating methodInfo
- Publication number
- JPS58204194A JPS58204194A JP8474682A JP8474682A JPS58204194A JP S58204194 A JPS58204194 A JP S58204194A JP 8474682 A JP8474682 A JP 8474682A JP 8474682 A JP8474682 A JP 8474682A JP S58204194 A JPS58204194 A JP S58204194A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- chemical
- electroplating
- plating film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【発明の詳細な説明】
発明の対象
本発明は、異種金属の界面に電気ニッケルメッキ皮膜を
形成するだめの電気ニッケルメッキ方法に関する。DETAILED DESCRIPTION OF THE INVENTION Object of the Invention The present invention relates to an electrolytic nickel plating method for forming an electrolytic nickel plating film on an interface between dissimilar metals.
従来技術
近年、公害の防止等の見地から、シアンを用いた前処理
を行なわずにメッキ処理を行なう必要にせまられている
。このようなシアン無しの前処理で金属表面に電気Ｎｉ
メッキ皮膜を形成する場合、メッキ処理前の金属表面を
十分に活性化し、かっ十分に清浄（二することは容易で
ない。メッキすべ ゛き面が単一種の金属の表面
であれば、その金属にあった前処理で表面を活性化し清
浄にできる可能性はある。しかし、異種金属の表面４二
電気Ｎｉメツキを施す場合、前処理ですべての金属表面
を十分に活性化し清浄にするのは極めて困難である。こ
のため従来、異種金属表面に電気Ｎｉメッキを施した場
合、メッキ皮膜の密着性が十分でなく、メツΦ処理後の
加熱処理でメッキ皮膜のふくれが生じるという問題があ
った。BACKGROUND OF THE INVENTION In recent years, from the standpoint of preventing pollution, it has become necessary to perform plating without pretreatment using cyan. With this pretreatment without cyanide, electrical Ni is applied to the metal surface.
When forming a plating film, it is not easy to fully activate and thoroughly clean the metal surface before plating.If the surface to be plated is the surface of a single type of metal, There is a possibility that the surface can be activated and cleaned with pretreatment. However, when applying electrical Ni plating to the surface of dissimilar metals, it is extremely difficult to sufficiently activate and clean all metal surfaces with pretreatment. For this reason, conventionally, when electrical Ni plating was applied to the surface of a dissimilar metal, there was a problem that the adhesion of the plating film was insufficient and the plating film blistered during the heat treatment after the metal Φ treatment.
発明の目的
本発明の目的は、異種金属の表面に密着性の良好な電気
Ｎｉメッキ皮膜を形成するための改良された電気Ｎｌ
メッキ方法を提供することにある。Object of the Invention The object of the present invention is to provide an improved electrolytic Ni plating film for forming an electrolytic Ni plating film with good adhesion on the surface of dissimilar metals.
The purpose is to provide a plating method.
本発明によれば、異種金属表面に電気Ｎｉメッキ処理を
施すに先立ち、その異種金属表面（＝化学Ｎ１メッキ処
理が施され、その後に電気Ｎｉメッキ処理が施される。According to the present invention, before electrolytic Ni plating is applied to a dissimilar metal surface, the dissimilar metal surface (=chemical N1 plating) is applied, and then electrolytic Ni plating is applied.
発明の実施例
本発明は、異種金属表面を有する種々製品に適用できる
が、−例として半導体素子用のセラミックパッケージの
場合（二ついて、本発明の一実施態様を説明する。EMBODIMENTS OF THE INVENTION Although the present invention can be applied to various products having dissimilar metal surfaces, two embodiments of the present invention will be described below, for example, in the case of ceramic packages for semiconductor devices.
第１図は、本発明を適用した半導体素子用セラミックパ
ッケージの一例を示す断面図である。図中、１はセラミ
ック基板、４はモリブデン板、６は銅棒である。セラミ
ック基板１０表面（二は、タングステンメタライズ層２
、化学Ｎｉメッキ皮膜３が予め形成される。FIG. 1 is a sectional view showing an example of a ceramic package for semiconductor devices to which the present invention is applied. In the figure, 1 is a ceramic substrate, 4 is a molybdenum plate, and 6 is a copper rod. Ceramic substrate 10 surface (second is tungsten metallized layer 2
, a chemical Ni plating film 3 is formed in advance.
４はモリブデン板、６は銅棒、１１はコバール（ｐｅＮ
ｉ Ｃｏ）等の金属リードであり、これらは化学Ｎ
ｉメッキ皮膜３およびタングステンメタライズ層２を介
して、Ａｇロウ１０（＝よってセラミック基板１にロウ
付けされる。4 is a molybdenum plate, 6 is a copper rod, 11 is Kovar (peN)
i Co), etc., and these are chemical N
The Ag solder 10 (=therefore is brazed to the ceramic substrate 1 via the i-plated film 3 and the tungsten metallized layer 2).
モリブデン板４、銅棒６はロウ付けに先立って、単体の
状態で化学Ｎｉメッキ処理が施され、表面に化学Ｎｉメ
ッキ皮膜５．７が形成される。例えば、還元タイプの化
学Ｎｉメッキ液を使用し、モリブデン板４は約２分間の
メッキ処理で約１μの厚さの化学Ｎｉメッキ皮膜５を形
成し、銅棒６は約６分間のメッキ処理で約３μの厚さの
化学Ｎｉメッキ皮膜７を形成する。その後、この化学Ｎ
ｉ９）に約１０分間入れ、化学Ｎｉメッキ皮膜５，７の
密着Ｉ生を高める。Prior to brazing, the molybdenum plate 4 and the copper rod 6 are subjected to chemical Ni plating treatment in their single state, and a chemical Ni plating film 5.7 is formed on their surfaces. For example, using a reduction type chemical Ni plating solution, the molybdenum plate 4 is plated for about 2 minutes to form a chemical Ni plating film 5 with a thickness of about 1 μm, and the copper rod 6 is plated for about 6 minutes to form a chemical Ni plating film 5. A chemical Ni plating film 7 having a thickness of about 3 μm is formed. Then this chemical N
i9) for about 10 minutes to increase the adhesion of the chemical Ni plating films 5 and 7.
しかる後、化学Ｎｉメッキ皮膜５．７が形成されたモリ
ブデン板４、銅棒６、および金ｆｉ ＩＪ−ド１１は、
Ａｇロウ１０１＝よってセラミック基板１（二ロウ付け
され、一体の構造体に組み立てられる。After that, the molybdenum plate 4, copper rod 6, and gold fi IJ-de 11 on which the chemical Ni plating film 5.7 was formed,
Ag solder 101 = Ceramic substrate 1 (2 soldered) and assembled into an integrated structure.
このようにして構造体（二組立てられた状態で、電気Ｎ
ｉメッキ処理を施し、モリブデン板４、銅棒６、会鵡リ
ード１１の表面に電気Ｎｉメッキ皮膜８を形成する。こ
の電気Ｎｉメッキ処理の前書二、シアンを用いない前処
理、例えばアルカリ陰極脱脂６Ｖ、６０℃、１分、塩酸
（１ｔ １ ） ３ 分、Ｈ２Ｓ ０４ Ｇ ｉｌｔ％
ｊＦ ５ Ｖ、１分、塩酸（１：１）３０秒、
１Ｎｉストライクメッキ２Ａ／ｄｍ２，１分の処理を
行ない、電気Ｎｉメッキ処理を行なうと、その後、
＋３１ 。In this way, the structure (in the assembled state)
An electrolytic Ni plating film 8 is formed on the surfaces of the molybdenum plate 4, copper rod 6, and lead lead 11 by i-plating. Pre-treatment without using cyanide, for example, alkaline cathodic degreasing at 6V, 60°C, 1 minute, hydrochloric acid (1t 1 ) for 3 minutes, H2S 04 Gilt%
jF 5 V, 1 minute, hydrochloric acid (1:1) 30 seconds,
1Ni strike plating 2A/dm2, 1 minute treatment, then electric Ni plating treatment, after that,
+31.
の加熱処理において十分に耐えうる密着性のよい電気Ｎ
ｉメッキ皮膜８が得られる。Electric N with good adhesion that can withstand heat treatment of
An i-plated film 8 is obtained.
その後、電気Ａｕメッキ処理を施し、電気Ａｕメッキ皮
膜９が形成される。ただし、この電気Ａｕメッキ処理は
本発明！＝おいて必須のものではなく、あくまで本例の
セラミックパッケージにおいて必要となる工程である。Thereafter, an electrical Au plating process is performed to form an electrical Au plating film 9. However, this electric Au plating process is the invention! = is not an essential step, but is only a necessary step in the ceramic package of this example.
異種の金属であるモリブデン板４と銅棒６の表面に、シ
アンを用いない前処理後に直接的に電気Ｎｉメッキ皮膜
８を形成した場合、これらの電気Ｎｉメッキ皮膜は密着
性が不十分となり、その後に４００〜５００℃の刀Ω熱
処理すると、ふくれが生じやすい。When the electrolytic Ni plating film 8 is directly formed on the surfaces of the molybdenum plate 4 and the copper rod 6, which are dissimilar metals, after pretreatment without using cyanide, the adhesion of these electrolytic Ni plating films is insufficient. If it is then heat treated at 400 to 500°C, blistering tends to occur.
しかし、前述のように、化学Ｎｉメッキ処理を施したの
り、その化学Ｎｉメッキ皮膜５，７上に電気Ｎｉメッキ
皮膜８を形成すれば、シアンを用いた前処理を行なわな
くても、その電気Ｎｉメッキ皮膜の密着性を大幅に改善
でき、その後に加熱処理してもふくれが生じにくくなる
。この密着性の改善効果は、化学Ｎｉ メッキ皮膜５，
７の厚さ、（４）
と関係する。この関係は第２図に示す如くであり、モリ
ブデン板４（二ついては約１μ厚の化学Ｎｉメッキ皮膜
５を、銅棒６については約３μの化学Ｎｉメッキ皮膜７
を形成した後に電気Ｎｉメッキ処理を施せば、密着性が
良好で加熱処理でふくれの生じにくい電気Ｎｉメッキ皮
膜８が得られる。However, as mentioned above, if the electrolytic Ni plating film 8 is formed on the chemical Ni plating films 5 and 7 after chemical Ni plating treatment, the electrical The adhesion of the Ni plating film can be greatly improved, and blisters are less likely to occur even after subsequent heat treatment. This adhesion improvement effect is due to the chemical Ni plating film 5,
7 thickness, related to (4). This relationship is as shown in FIG.
If an electrolytic Ni plating treatment is performed after forming, an electrolytic Ni plating film 8 with good adhesion and less likely to blister during heat treatment can be obtained.
なお第２図は、化学Ｎｉメッキ皮膜５．７の厚さを変え
て電気Ｎｌメッキ処理および電気Ａｕメッキ処理を施し
た試料を、加熱雰囲気に空気を用い、加熱温度４５０℃
、加熱時間加分の条件化で加熱処理した後の、電気Ｎｉ
−Ａｕメッキ皮膜のふくれ率をプロットしたものである
。Figure 2 shows samples that were subjected to electrical Nl plating and electrical Au plating with different thicknesses of the chemical Ni plating film 5.7, and were heated at a heating temperature of 450°C using air as the heating atmosphere.
, electric Ni after heat treatment under the conditions of adding heating time.
- The swelling rate of the Au plating film is plotted.
以上、セラミックパッケージを例；＝シて本発明を詳述
した。しかし、本発明はこの例（二限らず、異種金属表
面に電気Ｎｉメッキ皮膜を形成する用途に広く適用して
効果を得られるものであることは言うまでもない。The present invention has been described above in detail using a ceramic package as an example. However, it goes without saying that the present invention can be widely applied to applications in which electrolytic Ni plating films are formed on surfaces of dissimilar metals, including but not limited to this example.
発明の効果
以上に詳述したように、本発明によれば、シアンを用い
た前処理を行なうことなく、密着性が良く、耐熱性の優
れた電気Ｎｉメッキ皮膜を異種金属表面に容易に形成す
ることができ、その効果は極めて大きい。Effects of the Invention As detailed above, according to the present invention, an electrolytic Ni plating film with good adhesion and excellent heat resistance can be easily formed on a dissimilar metal surface without pretreatment using cyanide. can be done, and the effect is extremely large.
第１図は本発明を適用したセラミックパッケージの一例
を示す断面図、第２図は電気Ｎｉメッキ皮膜のふくれ軍
と、その下（二形成される化学Ｎｉメッキ皮膜の厚さと
の関係を示す図である。
４・・・モリブデン板、５，７・・・化学Ｎｉメッキ皮
膜、６・・・銅棒、８・・・電気Ｎｉメッキ皮膜。
−＋７１゜
第１図
２ 第２図
塙ＣFigure 1 is a cross-sectional view showing an example of a ceramic package to which the present invention is applied, and Figure 2 is a diagram showing the relationship between the swelling of the electrolytic Ni plating film and the thickness of the chemical Ni plating film formed underneath. 4... Molybdenum plate, 5, 7... Chemical Ni plating film, 6... Copper rod, 8... Electric Ni plating film. -+71° Fig. 1 2 Fig. 2 Hanawa C
Claims (1)
する電気ニッケルメッキ方法において、前記異種金属表
面に化学ニッケルメッキ処理を施し、その後に電気ニッ
ケルメッキ処理を施すことを特徴とする電気ニッケルメ
ッキ方法。(1) An electrolytic nickel plating method for forming an electrolytic nickel plating film on the surface of a dissimilar metal, characterized in that the dissimilar metal surface is subjected to a chemical nickel plating treatment, and then an electrolytic nickel plating treatment is performed. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8474682A JPS58204194A (en) | 1982-05-21 | 1982-05-21 | Nickel electroplating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8474682A JPS58204194A (en) | 1982-05-21 | 1982-05-21 | Nickel electroplating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58204194A true JPS58204194A (en) | 1983-11-28 |
Family
ID=13839249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8474682A Pending JPS58204194A (en) | 1982-05-21 | 1982-05-21 | Nickel electroplating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58204194A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4775668A (en) * | 1985-09-18 | 1988-10-04 | Pfizer Inc. | Substituted bridged-diazabicycloalkyl quinolone carboxylic acids and anti-bacterial use thereof |
| US4910094A (en) * | 1987-09-25 | 1990-03-20 | Hitachi, Ltd. | Multilayer plating method and multilayer plated film |
-
1982
- 1982-05-21 JP JP8474682A patent/JPS58204194A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4775668A (en) * | 1985-09-18 | 1988-10-04 | Pfizer Inc. | Substituted bridged-diazabicycloalkyl quinolone carboxylic acids and anti-bacterial use thereof |
| US4861779A (en) * | 1985-09-18 | 1989-08-29 | Pfizer Inc. | Anti-bacterial substituted bridged-diazabicycloalkyl quinolone carboxylic acids |
| US4910094A (en) * | 1987-09-25 | 1990-03-20 | Hitachi, Ltd. | Multilayer plating method and multilayer plated film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3413711A (en) | Method of making palladium copper contact for soldering | |
| JPH06196349A (en) | Copper lead frame material for tantalum capacitor and manufacture thereof | |
| JPH10287994A (en) | Plating structure of bonding part | |
| US3000085A (en) | Plating of sintered tungsten contacts | |
| JPS58204194A (en) | Nickel electroplating method | |
| CN100405564C (en) | Lead frame and method of manufacturing the same | |
| JPS584955A (en) | Package of gold-plated electronic parts | |
| JPH01257356A (en) | Lead frame for semiconductor | |
| JP7170849B2 (en) | Semiconductor device and its manufacturing method | |
| US4910094A (en) | Multilayer plating method and multilayer plated film | |
| KR900003472B1 (en) | Plating process for an electronic part | |
| JPS6242037B2 (en) | ||
| JPS613663A (en) | Pretreatment for brazing of metallic members | |
| US3178271A (en) | High temperature ohmic joint for silicon semiconductor devices and method of forming same | |
| JPS628532A (en) | Gold-plated electronic component package | |
| JP6273971B2 (en) | Manufacturing method of power module substrate with heat sink | |
| JPH01147087A (en) | Pretreatment of copper-tungsten alloy before plating | |
| JPH0238378A (en) | Method for soldering ceramics | |
| JP6556377B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPS62291951A (en) | Lead frame with oxidation resistant nickel plating resistant to release of solder | |
| JP2685936B2 (en) | Manufacturing method of composite material | |
| JPH0793329B2 (en) | How to fix semiconductor pellets | |
| JPS585275B2 (en) | Method for forming an electroplated base on alloy articles | |
| JPH07300696A (en) | Electrodeposition tin plating method | |
| JPS5926985A (en) | Soldering bondage of glass or ceramics and copper |