JPS58202540A - Method of bonding fine positioning by stand-off - Google Patents
Method of bonding fine positioning by stand-offInfo
- Publication number
- JPS58202540A JPS58202540A JP8611182A JP8611182A JPS58202540A JP S58202540 A JPS58202540 A JP S58202540A JP 8611182 A JP8611182 A JP 8611182A JP 8611182 A JP8611182 A JP 8611182A JP S58202540 A JPS58202540 A JP S58202540A
- Authority
- JP
- Japan
- Prior art keywords
- stand
- wiring board
- solder
- bumps
- positioning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体を初めとする集積回路の高密度実装方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for high-density packaging of integrated circuits including semiconductors.
従来より集積回路の高密度実装にはフリップチップボン
ディングが有効であるとされているが、さらに高密度化
するためには、はんだ等による接続バンプを微細化し、
接続密度を高める必要がある。そのためには位置合せ精
度の高度化が必要であり、従来の装置では高い信頼性は
得難い。また、フリップチップボンディングは接続バン
プが対向するフェイス・ダウン法であるため、接続後に
バンプ位置の゛整合性を確認することができないという
欠点があった。スタンド・オフは配線基板上に設けられ
た柱状の突起であシ、従来は例えば配線基板のデバイス
の四隅に対応する位置にスタンド・オフをはんだリフ口
温度よシも融点の高い材料を用いて蒸着することにより
、はんだリフロ時にデバイスと配線基板との間隔を制御
してはんだの流出やはんだバンプ相互の短絡を防止し、
リフロ後はその間隔をスタンド・オフの高さにょシ均一
化することを目的として用いられていた。Flip chip bonding has traditionally been considered effective for high-density mounting of integrated circuits, but in order to achieve even higher density, it is necessary to miniaturize the connection bumps using solder, etc.
Connection density needs to be increased. For this purpose, it is necessary to improve the alignment accuracy, and it is difficult to achieve high reliability with conventional devices. Furthermore, since flip-chip bonding is a face-down method in which connection bumps face each other, it has the disadvantage that it is not possible to confirm the consistency of bump positions after bonding. Standoffs are pillar-shaped protrusions provided on a wiring board. Conventionally, standoffs were placed at positions corresponding to the four corners of a device on a wiring board using a material with a higher melting point than the solder opening temperature. By vapor deposition, it is possible to control the distance between the device and the wiring board during solder reflow to prevent solder from flowing out and shorting between solder bumps.
After reflow, the purpose was to equalize the spacing to the standoff height.
また、従来の位置合せ法の場合、リフ口前のデバイスは
フラックスの粘着性のみにより配線基板上に保持してい
たため、リフロ工程への運搬中には振動、衝撃等が加わ
らないように取扱上の注意が必要であった。In addition, in the case of the conventional alignment method, the device in front of the reflow opening was held on the wiring board only by the adhesiveness of the flux, so care must be taken to prevent vibrations, shocks, etc. from being applied during transportation to the reflow process. Caution was required.
本発明は、これらの欠点を除去するため、スタンド・オ
フにより位置の整合をとり、位置ずれをデバイスと配線
基板の間隔の測定によシわかるようにしたスタンド・オ
フによるボンディング微細位置合せ方法を提供するもの
である。In order to eliminate these drawbacks, the present invention provides a bonding microalignment method using stand-offs, which aligns the positions using stand-offs and makes it possible to detect positional deviations by measuring the distance between the device and the wiring board. This is what we provide.
以下図面により本発明の詳細な説明する。The present invention will be explained in detail below with reference to the drawings.
第1図及び第2図は本発明の実施例であって、1は集積
回路デバイス基板、2は配線基板、3は凸部となるスタ
ンド・オフ、4は回路パターン及び絶縁膜、5は接続用
はんだバンク、6はバンプ用のポンディングパッド、7
は・スタンド・オフに15、□
対向しかん合するくほみ(四部゛)である。m1図はス
タンド・オフ部の断面図である。スタンド・オフ3はデ
バイス1と配線基板20間隔を規定するものであるが、
スタンド・オフ3の先端がくほみ7に納まれば、両側に
あるバンプ5の位置合せが行なえるように、デバイス1
上にくぼみ7を設けた。よって、バンプ5の位置にずれ
が生じている場合にはスタンド・オフ3とくぼみ7がか
ん合しないため、デバイス1と配線基板2の間隔に差が
生じ、この間隔(h)の測定により位置ずれが判断出来
る。本実施例ではデバイス1.配線基板2としてSi基
板を用い、スタンド・オフ31回路パターン及び絶縁膜
4.はんだバンプ5.ポンディングパッド6はメタルマ
スクを用いて蒸着により形成した。それぞれの材料とし
て3−Pd(100μm($)。1 and 2 show embodiments of the present invention, in which 1 is an integrated circuit device substrate, 2 is a wiring board, 3 is a standoff serving as a convex portion, 4 is a circuit pattern and an insulating film, and 5 is a connection. 6 is a solder bank for bumps, 7 is a bonding pad for bumps, and 7 is a solder bank for bumps.
The stand-off is 15, □ the opposite mating Kuhomi (four parts). Figure m1 is a sectional view of the standoff part. The standoff 3 defines the distance between the device 1 and the wiring board 20,
Once the tip of the standoff 3 is in the groove 7, move the device 1 so that the bumps 5 on both sides can be aligned.
A recess 7 was provided on the top. Therefore, if there is a deviation in the position of the bump 5, the standoff 3 and the recess 7 will not engage with each other, resulting in a difference in the distance between the device 1 and the wiring board 2, and the measurement of this distance (h) will determine the position. Discrepancies can be determined. In this embodiment, device 1. A Si substrate is used as the wiring board 2, and a standoff 31 circuit pattern and an insulating film 4. Solder bump5. The bonding pad 6 was formed by vapor deposition using a metal mask. 3-Pd (100 μm ($)) as each material.
20μm(h))、 4−8iO(4μm(h)、 7
は100μm(φ)、はんだ用の窓径は50pm(16
))、 5−Pb5n (62:38)(100μm(
φ)、5/jm ) 、6−Cu (80μm’φ)
、1μm)を用いた。デバイス1の大きさは2.7mX
2.7mとし、ボンティングパッド6は中心間距離を2
00μmとして1辺当り10個で計40個設けた。〈は
み7はデバイス1の四隅に設けた。配線基板20大きさ
は5 y X 5 msとしデバイス1と同じパターン
を蒸着してくぼみ7に対向する位置にスタンド・オフ3
を設けた。このボンディングにより精度約2μmの位置
合せが達成できた。また、位置合せ装置の精度が20μ
m程度しかない場合にも、位置合せ後に配線基板に微小
振動を加えることにより上記精度の位置合せが可能とな
った。20 μm (h)), 4-8iO (4 μm (h), 7
is 100 μm (φ), and the window diameter for soldering is 50 pm (16
)), 5-Pb5n (62:38) (100 μm (
φ), 5/jm), 6-Cu (80μm'φ)
, 1 μm) was used. The size of device 1 is 2.7mX
2.7m, and the distance between the centers of the bonding pads 6 is 2.
00 μm, 10 pieces per side, 40 pieces in total were provided. <The scissors 7 were provided at the four corners of the device 1. The size of the wiring board 20 is 5 y x 5 ms, and the same pattern as the device 1 is deposited, and a standoff 3 is placed opposite the recess 7.
has been established. By this bonding, alignment with an accuracy of about 2 μm could be achieved. In addition, the accuracy of the alignment device is 20μ
Even when the distance is only about m, alignment with the above-mentioned accuracy is possible by applying minute vibrations to the wiring board after alignment.
第2図は上記のモデル試験で位置ずれが生じた場合のデ
バイス1と配線基板2の位置関係を示した図である。l
alが正常な場合で全部のスタンド・オフが対向の四部
とかん合しているので、基板間隔d=h (正常な基板
間隔)となっている。1b)。FIG. 2 is a diagram showing the positional relationship between the device 1 and the wiring board 2 when a positional shift occurs in the above model test. l
When al is normal, all the standoffs are engaged with the four opposing parts, so the board spacing d=h (normal board spacing). 1b).
+01は位置ずれが生じた場合でlblは一方がd>h
。+01 is when a positional shift occurs, and lbl is one side when d>h
.
もう一方はd=hで片方のみがかん合している場合、(
0)は両方ともずれが生じてd>hとなっている場合の
図である。いずれの場合も基板間隔を測定することによ
り、バンプ位置の整合性が判断出来る。よって基板間隔
の測定後にはんだのりフロを行うことにより、位置ずれ
が原因となる導通不良、短絡等の不良発生を防ぐことが
できた。If the other one is d=h and only one is engaged, (
0) is a diagram when a deviation occurs in both cases and d>h. In either case, the consistency of the bump positions can be determined by measuring the substrate spacing. Therefore, by performing solder flow after measuring the substrate spacing, it was possible to prevent defects such as conduction defects and short circuits caused by positional deviations.
以上説明したように、本発明によれば、スタン5−
ド・オフを利用して接続用バンプの位置合せができるの
で、(1)位置合せの精度が向上すること、(2)信頼
性が向上すること、(3)装置の精度を向上させる必要
がないこと、(4)位置の整合性がリフ日前に確認でき
ること、(5)位置合せ後の取扱いが容易であること等
の利点がある。As explained above, according to the present invention, since the connection bumps can be aligned using stand five-off, (1) alignment accuracy is improved, and (2) reliability is improved. (3) There is no need to improve the accuracy of the device, (4) The consistency of the position can be confirmed before the ref date, and (5) It is easy to handle after alignment. .
第1図は本発明の対象となる接面の断面図、第2図は位
置ずれによるデバイスと配線基板の位置関係を示す正面
図である。
l・・・集積回路デバイス、 2・・・配置1JM板、
3・・・スタンド・オフ(凸部)、 4・・・回路パタ
ーン及び絶縁膜、 5・・・はんだバンプ、6・・・
ポンディングパッド、 7・・・スタンド・オフに対
向するくぼみ(凹部)。
特許出願人 日本電信電話公社
代 理 人 白 水 常 雄性1名
6−FIG. 1 is a sectional view of a contact surface to which the present invention is applied, and FIG. 2 is a front view showing the positional relationship between a device and a wiring board due to positional deviation. l...Integrated circuit device, 2...Arrangement 1JM board,
3... Standoff (protrusion), 4... Circuit pattern and insulating film, 5... Solder bump, 6...
Ponting pad, 7... recess (concavity) facing the stand-off. Patent applicant: Nippon Telegraph and Telephone Public Corporation Representative: Tsune Hakumizu Male: 1 person 6-
Claims (1)
等のバンプにより接続する場合に、前記デバイス側と前
記配線基板のいずれか一方に複数の凹部を設け、他方に
は前記四部と対向する位置に該凹部にかん合する凸部を
設けることによ如、前記デバイスと前記配線基板の間隔
調節とりフロ時の前記はんだの流出と該はんだのバンプ
による配線相互間の短絡をさけるためのスタンド・オフ
の役割を持たせるとともに、前記凸部と前記凹部のかん
合により、高精度の位置合せならびに該位置合せ後の位
置の確認を容易処したことを特徴とするスタンド・オフ
によるボンディング微細位置合せ方法。When connecting an integrated circuit device and a wiring board with bumps such as solder while facing each other, a plurality of recesses are provided on either the device side or the wiring board, and the other side is provided with a plurality of recesses at positions facing the four parts. By providing a convex portion that engages with the concave portion, a stand-off is provided to adjust the distance between the device and the wiring board, and to prevent the solder from flowing out during flow and shorting between the wires due to solder bumps. A bonding fine positioning method using a stand-off, characterized in that the mating of the convex part and the concave part facilitates highly accurate positioning and confirmation of the position after the positioning. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8611182A JPS58202540A (en) | 1982-05-21 | 1982-05-21 | Method of bonding fine positioning by stand-off |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8611182A JPS58202540A (en) | 1982-05-21 | 1982-05-21 | Method of bonding fine positioning by stand-off |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58202540A true JPS58202540A (en) | 1983-11-25 |
Family
ID=13877585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8611182A Pending JPS58202540A (en) | 1982-05-21 | 1982-05-21 | Method of bonding fine positioning by stand-off |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58202540A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6255996A (en) * | 1985-09-05 | 1987-03-11 | 日本電気株式会社 | Wiring board |
JPS6411025U (en) * | 1987-07-10 | 1989-01-20 | ||
US4818728A (en) * | 1986-12-03 | 1989-04-04 | Sharp Kabushiki Kaisha | Method of making a hybrid semiconductor device |
JPH0191320U (en) * | 1987-12-09 | 1989-06-15 | ||
US4874721A (en) * | 1985-11-11 | 1989-10-17 | Nec Corporation | Method of manufacturing a multichip package with increased adhesive strength |
JPH06295937A (en) * | 1993-03-26 | 1994-10-21 | Nec Corp | Mounting method of photoelectric element |
-
1982
- 1982-05-21 JP JP8611182A patent/JPS58202540A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6255996A (en) * | 1985-09-05 | 1987-03-11 | 日本電気株式会社 | Wiring board |
US4874721A (en) * | 1985-11-11 | 1989-10-17 | Nec Corporation | Method of manufacturing a multichip package with increased adhesive strength |
US4818728A (en) * | 1986-12-03 | 1989-04-04 | Sharp Kabushiki Kaisha | Method of making a hybrid semiconductor device |
JPS6411025U (en) * | 1987-07-10 | 1989-01-20 | ||
JPH0191320U (en) * | 1987-12-09 | 1989-06-15 | ||
JPH06295937A (en) * | 1993-03-26 | 1994-10-21 | Nec Corp | Mounting method of photoelectric element |
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