JPS58200534A - Forming method for pattern - Google Patents

Forming method for pattern

Info

Publication number
JPS58200534A
JPS58200534A JP57083009A JP8300982A JPS58200534A JP S58200534 A JPS58200534 A JP S58200534A JP 57083009 A JP57083009 A JP 57083009A JP 8300982 A JP8300982 A JP 8300982A JP S58200534 A JPS58200534 A JP S58200534A
Authority
JP
Japan
Prior art keywords
resist
rays
exposure
resist film
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57083009A
Other languages
Japanese (ja)
Inventor
Kozo Mochiji
広造 持地
Takeshi Kimura
剛 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57083009A priority Critical patent/JPS58200534A/en
Publication of JPS58200534A publication Critical patent/JPS58200534A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a minute pattern of a photosensitive positive type resist of excellent dry etching capability by utilizing a fact that a photosensitive group of the resist of excellent dry etching-resistant property is decomposed through exposure by X-rays and changed into non-photosensitivity to ultraviolet beams. CONSTITUTION:The photosensitive positive type resist is applied onto the surface of a substrate 2, and a resist film 1 is formed and thermally treated. X-rays are exposed to the resist film 1 through a mask 3. The whole surface of the resist film 1 is exposed collectively, thermally treated and developed by ultravilet beams. The whole is washed through the flow of water. A region not subject to said exposure by X-rays in the resist film 1 is dissolved in alkali through succeeding ultraviolet-beam exposure, and removed by development. On the other hand, the photosensitive group in the resist is decomposed through exposure by X-rays in a region exposed by X-rays, and photosensitivity to ultraviolet beams is lost. Acordingly, a section exposed by X-rays is not dissolved into a developer and remains after development, and a negative type pattern is formed. The minute pattern of excellent dry etching-resistant property can be formed only by adopting ultraviolet-beam whole-surface exposure in a mormal resist treating process.

Description

【発明の詳細な説明】 本発明はパターン形成方法に関し、詳しくは、Ｘ線露光
法と紫外１露光法を併用することによシ、耐ドライエツ
チング性に優れたレジストの微細パターンを形成する方
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pattern forming method, and more specifically, a method for forming a fine resist pattern with excellent dry etching resistance by using a combination of an X-ray exposure method and an ultraviolet 1 exposure method. Regarding.

Ｘ線リングラフィは光源として、波長が１０〜５０人の
軟ＸＩＶＩＩを用いるので、マスクによる回折、干渉強
”度が小さく、また、レジスト中での散乱の影響も小さ
いため、従来のリングラフィ手段に比べて、飛躍的に高
い解像力を実現できる。しかし、Ｘ線レジストは優れた
解像度を持ってはいるが、良好な耐ドライエツチング性
會備えたものが極めて少ないという欠点力°ある。例え
ば、ＰＭＭＡ（ポリメチルメタクリレート）ハ、塗布膜
厚３μｍの条件でも、０．５μｍ以下までの微細パター
ンが形成可能であるが、ドライエツチングにおけるレジ
ストの膜減りや変質が著しく、この結果、こつレジスト
を用いてアルミニウムやシリコン酸化物をドライエツチ
ングによって加工を行なうことができない。X-ray phosphorography uses soft XIVII with a wavelength of 10 to 50 as a light source, so diffraction due to a mask and interference intensity are small, and the influence of scattering in the resist is also small, so it cannot be used as a conventional phosphorography method. However, although X-ray resists have excellent resolution, they have the disadvantage that very few of them have good dry etching resistance.For example, With PMMA (polymethyl methacrylate), it is possible to form fine patterns of up to 0.5 μm even with a coating thickness of 3 μm, but the resist film decreases and deteriorates significantly during dry etching, and as a result, it is difficult to use a katsu resist. Therefore, aluminum and silicon oxide cannot be processed by dry etching.

したがって、Ｘ線露光用レジストとしては、高解像性を
有するとともに、ドライエツチング処理に対して変質や
変形を生じることなく、良好な耐性を持つことが要求さ
れる。Therefore, resists for X-ray exposure are required to have high resolution and good resistance to dry etching treatment without deterioration or deformation.

本発明の目的は、上記従来の問題を解決し、耐ドライエ
ツチング性に優れたレジストの微細パタ−ン形成法會提
供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems and to provide a method for forming fine resist patterns with excellent dry etching resistance.

上記目的を達成するため、本発明は耐ドライエツチング
性に優れた感光性ポジ型レジストの感光基がＸ線露光に
より分解し、紫外光に対し不感光性となることを見出し
、この新規な知見を利用したものである。すなわち、レ
ジスト膜にマスクを介して、Ｘ線によりパターン露光し
た後、全面全紫外光露光すると、Ｘ線未寓光部は通常の
感光作用により、現像液に可溶性となるが、Ｘ線露光部
Ｖｉ、紫外光に不感光性となっているので、そのまま、
現鐵液に不溶となシ、その結果、Ｘ線に対して、ネガ型
のパターン形成が可能となる。In order to achieve the above object, the present invention has discovered that the photosensitive groups of a photosensitive positive resist with excellent dry etching resistance are decomposed by X-ray exposure, making it insensitive to ultraviolet light, and based on this new knowledge. This is what was used. That is, when a resist film is pattern-exposed to X-rays through a mask and then exposed to total ultraviolet light, the areas not exposed to X-rays become soluble in the developer due to the normal photosensitivity, but the areas exposed to X-rays become soluble in the developer. Vi, as it is insensitive to ultraviolet light,
It is insoluble in the current iron solution, and as a result, it is possible to form a negative pattern with respect to X-rays.

以下、実施例を用いて、本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail using Examples.

まず、第１図■に示したように加工対象とする基板２の
表面Ｆに感光性ポジ型しジス）ＡＺ１３５０Ｊ（商品名
、米国シップレイ社製）全厚、ｈ′　　□ さｌμｎ１に塗布し、レジスト膜１を形成する。First, as shown in Fig. 1 (■), a photosensitive positive type film (Z) AZ1350J (trade name, manufactured by Shipley, Inc., USA) is applied to the surface F of the substrate 2 to be processed to a total thickness of h' □ lμn1. A resist film 1 is formed.

上記レジスト膜１ｆｒ８０ｔｌ’、２０分間熱処理ずゐ
。（この熱処理？本明細書ではプリベークという） 次に、第１図■に示したように上記レジスト膜ｌにマス
ク３を介して、ＸＩｆ５１露光を行なう。この場合、Ｘ
線源にシンクロトロン軌道放射光を柑いると、最適照射
量はＺ３Ｊ／ｃｒｎ”　　（シンクロ）。The above resist film 1fr80tl' was heat-treated for 20 minutes. (This heat treatment? In this specification, it is referred to as pre-bake.) Next, as shown in FIG. In this case,
When synchrotron orbital synchrotron radiation is used as a radiation source, the optimal irradiation dose is Z3J/crn" (synchronized).

ン加速エネルギーＩ　ＧｅＶ　）である。）ｌマスクは
ポリイミド基板（膜厚４μｍ）上に金パターン（金の膜
厚０．５μｍ）を形成したものを用いた。acceleration energy I GeV ). ) A mask was used in which a gold pattern (gold film thickness: 0.5 μm) was formed on a polyimide substrate (film thickness: 4 μm).

次に、第１図（０の様に、レジスト膜ｌの全面を紫外光
で一括露光する。光源には、超高圧水親ランプ等を用い
、Ａ光量は１００〜２００　Ｊ／ｃｍ２とした。Next, as shown in FIG. 1 (0), the entire surface of the resist film I was exposed at once to ultraviolet light. An ultra-high pressure hydrophilic lamp or the like was used as the light source, and the amount of light A was 100 to 200 J/cm<2>.

次に、上記レジスト膜１を１００°〜１３０Ｃ１２０分
間熱処理する。（本明細書ではこの熱処理を露光後ベー
クという） 次に、上記レジスト膜ｌを現像する。現像液には有機性
アンモニウム水溶液１．あるいは、アルカリ水溶液？使
用できる。現像液温度は２０°〜２５Ｃで１〜２分間浸
漬させ、この後、流水洗浄する。レジスト膜１のうち、
先のＸ線露光を受けていない領域は、引き続く紫外光露
光によりアルカリ町培となり、上記現像によって除去さ
れる。Next, the resist film 1 is heat treated at 100° to 130° C. for 120 minutes. (In this specification, this heat treatment is referred to as post-exposure bake.) Next, the resist film 1 is developed. The developer is an organic ammonium aqueous solution. Or an aqueous alkaline solution? Can be used. The developer is immersed for 1 to 2 minutes at a temperature of 20° to 25°C, and then washed with running water. Of the resist film 1,
Areas not previously exposed to X-rays are rendered alkali by subsequent exposure to ultraviolet light and removed by the development described above.

一方、Ｘ線露光された領域は、レジスト中の感光基がＸ
線露光によって分解され、もはや紫外光に対する感光性
は失われる。したがって、第１図（ト）に示したように
Ｘ１１ｉｉｌ露光部分は現像液に不溶となって現像後Ｖ
Ｃ残り、ネガ型パターンが形成される。On the other hand, in the area exposed to X-rays, the photosensitive group in the resist is
It is decomposed by line exposure and no longer has photosensitivity to ultraviolet light. Therefore, as shown in FIG. 1(g), the exposed portion of
C, a negative pattern is formed.

上記方法により、通常のレジスト処理工程に紫外光全面
露光を取り入れるだけという、非常に簡単な工程で、耐
ドライエツチング性に優れたＡＺ１３５０Ｊの微細ハタ
ーン倉形成することができる。According to the above method, a fine pattern pattern of AZ1350J having excellent dry etching resistance can be formed in a very simple process of incorporating full-surface exposure to ultraviolet light into a normal resist processing process.

上記実施例においては、レジストとしてＡＺ１３５０Ｊ
ｋ用いたが、本発明の適用はこのレジストに限雉される
ものではなく、ＡＺ１３５０Ｊ以外＋７ＪＡＺ　２４０
０　（シｙプＬ／（社製）や０ＦＰＩ’Ｌシリ−スレシ
スト（東京応化工業製）等のポジ型感光性レジストを用
いても′、これら感光性ポジ型ホトレジストはＸ線レジ
ストより耐ドライエツチ性が大きいので同様の結果を得
ることができる。In the above example, AZ1350J was used as the resist.
However, the application of the present invention is not limited to this resist, and other than AZ1350J+7JAZ 240
Even if positive-type photoresists such as 0 (manufactured by SHIP L/(manufactured by Co., Ltd.) and 0FPI'L Series Resist (manufactured by Tokyo Ohka Kogyo Co., Ltd.) are used, these photosensitive positive-type photoresists have better dry etch resistance than X-ray resists. Similar results can be obtained since the properties are large.

上記説明から明らかなように、本発明によれば、耐ドラ
イエツチング性の良いポジ型感光性レジストを、Ｘ線露
光により微細加工できるので、現状のドライエツチング
技術をそのまま使用することができ、Ｘ＠リソグラフィ
を従来の半導体製造プロセスに実用化できる。As is clear from the above description, according to the present invention, a positive photosensitive resist with good dry etching resistance can be microfabricated by X-ray exposure, so the current dry etching technology can be used as is, and @ Lithography can be put to practical use in conventional semiconductor manufacturing processes.

【図面の簡単な説明】[Brief explanation of the drawing]

第１−は本発明の一実施例を示す工程である。 Step 1- is a step showing an embodiment of the present invention.

Claims (1)

【特許請求の範囲】 １、下記工程會含むパターン形成法、 （ａ）　　被加工物体表面上にレジストを塗布してレジ
スト膜を形成する工程、 （ｂ）　　上記レジスト膜に所望の形状を有するマスク
？介し、Ｘ線會無光し、被露光部のレンスト膜の分子構
造を変化させる工程、 （Ｃ）　　上記レジスト膜の全面に紫外光を妬光する工
程、 （ｄ）　　上記レジスト膜を熱処理する工程、（ｅ）　
　上記レジスト膜を現１象処理して、Ｘ線未露光部を除
去する工程、[Claims] 1. A pattern forming method comprising the following steps: (a) a step of applying a resist onto the surface of a workpiece to form a resist film; (b) a mask having a desired shape on the resist film; ? (C) Applying ultraviolet light to the entire surface of the resist film; (d) Heat-treating the resist film. ,(e)
a step of subjecting the resist film to a phenomenon treatment to remove the unexposed portions of the X-rays;
JP57083009A 1982-05-19 1982-05-19 Forming method for pattern Pending JPS58200534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57083009A JPS58200534A (en) 1982-05-19 1982-05-19 Forming method for pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57083009A JPS58200534A (en) 1982-05-19 1982-05-19 Forming method for pattern

Publications (1)

Publication Number Publication Date
JPS58200534A true JPS58200534A (en) 1983-11-22

Family

ID=13790244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57083009A Pending JPS58200534A (en) 1982-05-19 1982-05-19 Forming method for pattern

Country Status (1)

Country Link
JP (1) JPS58200534A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63185022A (en) * 1987-01-27 1988-07-30 Fujitsu Ltd Forming method for pattern
US5698377A (en) * 1995-06-13 1997-12-16 Nippon Precision Circuits Inc. Method of forming a resist pattern

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63185022A (en) * 1987-01-27 1988-07-30 Fujitsu Ltd Forming method for pattern
US5104772A (en) * 1987-01-27 1992-04-14 Fujitsu Limited Method of forming fine resist pattern in electron beam or x-ray lithography
JPH0551169B2 (en) * 1987-01-27 1993-07-30 Fujitsu Ltd
US5698377A (en) * 1995-06-13 1997-12-16 Nippon Precision Circuits Inc. Method of forming a resist pattern

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