JPS58173872A - Amorphous si thin film photovoltaic force element - Google Patents
Amorphous si thin film photovoltaic force elementInfo
- Publication number
- JPS58173872A JPS58173872A JP57055344A JP5534482A JPS58173872A JP S58173872 A JPS58173872 A JP S58173872A JP 57055344 A JP57055344 A JP 57055344A JP 5534482 A JP5534482 A JP 5534482A JP S58173872 A JPS58173872 A JP S58173872A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- amorphous silicon
- amorphous
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 62
- 239000010409 thin film Substances 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 8
- 239000010935 stainless steel Substances 0.000 claims abstract description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000000354 decomposition reaction Methods 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 4
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 47
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XUIMIQQOPSSXEZ-RNFDNDRNSA-N silicon-32 atom Chemical compound [32Si] XUIMIQQOPSSXEZ-RNFDNDRNSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、太陽電池などの光電変換デバイスに」いるア
モルファスシリコン薄膜光起電力素子にする。DETAILED DESCRIPTION OF THE INVENTION The present invention provides an amorphous silicon thin film photovoltaic element used in photoelectric conversion devices such as solar cells.
従来、かかる太陽電池などの光電変換デバイスに用いら
れる半導体材料には、チョクラルスキ法、フローティン
グゾーン法あるいはリボン状に引き上げる方法により作
製したシリコン単結晶が用いられてきた。しかし、かか
る単結晶はその原価から見て一般的な電力供給方法とし
ては普及していない。近年、製造原価を低減する方法と
して、モノシラン（ＳｉＨ４）などをグロー放電中で分
解するなどの方法によって得られる水素を含むアモルフ
ァス膜状のシリコンを用いることが提案されている。こ
れらの方法によって、禁止帯中に存在する局在準位が比
較的少なく、置換型不純物のドーピングによる価電子制
御がある程度可能なアモルファスシリコン膜を得ること
が可能となり、太陽電池等の光電変換デバイスを作製で
き、その製造原価は低減される見通しとなっている。Conventionally, silicon single crystals produced by the Czochralski method, the floating zone method, or the ribbon-like pulling method have been used as semiconductor materials for photoelectric conversion devices such as solar cells. However, such single crystals are not widely used as a general power supply method due to their cost. In recent years, as a method of reducing manufacturing costs, it has been proposed to use an amorphous silicon film containing hydrogen obtained by decomposing monosilane (SiH4) or the like in a glow discharge. These methods make it possible to obtain amorphous silicon films that have relatively few localized levels in the forbidden band and that can control valence electrons to some extent by doping with substitutional impurities, making them suitable for photovoltaic devices such as solar cells. It is expected that the manufacturing cost will be reduced.
しかし、このようにして得られるアモルファスシリコン
は他の結晶半導体に比べ、禁止帯中に存在する局在準位
がまだまだ多（、特に禁止帯の中で伝導帯および充満帯
近傍で非常に多く、いわゆるパントチイルを引いている
。However, compared to other crystalline semiconductors, the amorphous silicon obtained in this way still has a large number of localized levels in the forbidden band (particularly in the forbidden band, there are many localized levels near the conduction band and the filled band). It is pulling what is called a pantochiil.
れが新たな欠陥を作ることになる。禁止帯中の局在準位
やドーピング効率の悪さのため、例えばアモルファスシ
リコン太陽電池に於いても十分に高い光電変換効率を得
るに至っていないのが現状である。This creates new defects. At present, it is not possible to obtain sufficiently high photoelectric conversion efficiency even in amorphous silicon solar cells, for example, due to localized levels in the forbidden band and poor doping efficiency.
ルファスシリコン層、５は透明導電層、６は太陽光線で
ある。２．８．４の各アモルファスシリコン層は公知の
グロー放電分解法、反応性スパッタ法などによって得ら
れ、Ｐ型アモルファスシリコン層２はポロンなどをドー
プし、ｎ型アモルファスシリコン層３は不純物をドープ
せず、ｎ型アモルファスシリ３２層４はリンなどをドー
プしておす、各々の厚みはＰ型アモルファスシリコン層
２が約５００Ａ、ｎ型アモルファスシリコン層３が約５
０００Ａ１ｎ型アモルファスシリコン層４が５０〜２０
０にである。透明導電層５は公知の真空蒸着法あるいは
スパッタ法などによって得られ、その厚みは３００〜５
０００λ 程度である。5 is a transparent conductive layer, and 6 is a solar ray. Each amorphous silicon layer in 2.8.4 is obtained by a known glow discharge decomposition method, reactive sputtering method, etc., the P-type amorphous silicon layer 2 is doped with poron, etc., and the n-type amorphous silicon layer 3 is doped with impurities. The n-type amorphous silicon 32 layer 4 is doped with phosphorus or the like.The thickness of each layer is approximately 500A for the P-type amorphous silicon layer 2 and approximately 5A for the n-type amorphous silicon layer 3.
000A1 n-type amorphous silicon layer 4 is 50 to 20
It is at 0. The transparent conductive layer 5 is obtained by a known vacuum evaporation method or sputtering method, and has a thickness of 300 to 50 mm.
It is about 000λ.
との界面で伝導帯の大きな落差が形成されず、充分な光
起電力効果が得られていないという欠点がある。また、
Ｐ型アモルファスシリコン層の吸収係数が大きいため、
入射光のうちｐ−ｉ界面で吸収されなかった光がほとん
どＰ型アモルファスシリコン層で吸収されてしまい、ス
テンレス基板で反射された光を充分に活用できないとい
う欠点がある。There is a drawback that a large drop in the conduction band is not formed at the interface with the material, and a sufficient photovoltaic effect cannot be obtained. Also,
Because the absorption coefficient of the P-type amorphous silicon layer is large,
Most of the incident light that is not absorbed at the p-i interface is absorbed by the P-type amorphous silicon layer, and the drawback is that the light reflected by the stainless steel substrate cannot be fully utilized.
第２図は従来の他のアモルファスシリコン薄膜光起電力
素子の構造を示す断面図であり、１１はガラス基板、１
２は透明導電層、１８はＰ型アモルファスシリコンカー
バイト層、１４はｎ型アモルファスシリコン層、１５は
ｎ型アモルファスシリコン層、１６はアルミニウムなど
の電極、１７は太陽光線である。透明導電層１２は前述
の方法以外に公知のＣＶＤ法あるいはスプレー法などに
よって得られ、その厚みは３００〜５００ＯＡ 程度
である。Ｐ型アモルファスシリコンカーバイト層１３は
、例えばモノシラン（５ｉＨ４）、メタン（ＣＨ４）、
およびジポラン（Ｂ２Ｈ６，） の混合ガスをグロー
放電分解することによって得られ、厚みは５０〜２００
ムなどを真空蒸着することによって作製され、その厚み
は０．１μｍ−１μｍ程度である。FIG. 2 is a cross-sectional view showing the structure of another conventional amorphous silicon thin film photovoltaic device, in which 11 is a glass substrate;
2 is a transparent conductive layer, 18 is a P-type amorphous silicon carbide layer, 14 is an n-type amorphous silicon layer, 15 is an n-type amorphous silicon layer, 16 is an electrode such as aluminum, and 17 is a sunlight beam. The transparent conductive layer 12 is obtained by a known method such as CVD or spraying in addition to the method described above, and has a thickness of about 300 to 500 OA. The P-type amorphous silicon carbide layer 13 is made of, for example, monosilane (5iH4), methane (CH4),
It is obtained by glow discharge decomposition of a mixed gas of
It is manufactured by vacuum evaporating a film or the like, and its thickness is about 0.1 μm to 1 μm.
このような構造のアモルファスシリコン薄膜光起電力素
子はＰ型層が薄いために均一な層を形成しにくく、Ｐ型
層が島状になり、Ｐ−ｉ接合が不完全になる欠点がある
。またガラス基板を用いているため割れやすく、フレキ
シブルでないという欠点がある。An amorphous silicon thin film photovoltaic device having such a structure has a drawback that since the P-type layer is thin, it is difficult to form a uniform layer, the P-type layer becomes island-like, and the P-i junction becomes incomplete. Furthermore, since it uses a glass substrate, it has the disadvantage of being easily broken and not being flexible.
本発明は上記欠点を解消するため成されたもので、本発
明の１つの目的は、高い光電変換効率を有するアモルフ
ァスシリコン薄膜光起電力素子を提供することにある。The present invention has been made to eliminate the above-mentioned drawbacks, and one object of the present invention is to provide an amorphous silicon thin film photovoltaic device having high photoelectric conversion efficiency.
本発明の他の目的は、Ｐ型アモルファスシリコン層の光
学的バンドギャップの大きいアモルファスシリコン薄膜
光起電力素子を提供することにある。本発明のもう１つ
の目的は、Ｐ型アモルファスシリコン層の吸収係数の小
さいアモルファスシリコン薄膜光起電力素子を提供する
ことにある。本発明の他の目的はＰ型層を厚くして均一
な層を形成し、Ｐ−ｉ接合が充分なアモルファスシリコ
ン薄膜光起電力素子を提供するこのような目的を達する
に本発明者等は種々検討の結果、光入射側より順次透明
導電層、ｎ型アモルファスシリコン８、ｉ型アモルファ
スシリコンＬ Ｐ型アモルファスシリコンカーバイト層
、および基板で構成することにより可能であることを見
出した。Another object of the present invention is to provide an amorphous silicon thin film photovoltaic device in which the P-type amorphous silicon layer has a large optical bandgap. Another object of the present invention is to provide an amorphous silicon thin film photovoltaic device whose P-type amorphous silicon layer has a small absorption coefficient. Another object of the present invention is to provide an amorphous silicon thin film photovoltaic device by thickening the P-type layer to form a uniform layer and having a sufficient P-i junction. As a result of various studies, we have found that this is possible by sequentially comprising a transparent conductive layer, n-type amorphous silicon 8, i-type amorphous silicon LP, P-type amorphous silicon carbide layer, and a substrate from the light incident side.
以下に本発明を１実施例に関し詳細に説明する。The present invention will be explained in detail below with reference to one embodiment.
第３図は本発明によるｌ実施例のアモルファスシリコン
薄膜光起電力素子の構造を示す断面図であ））、２１は
ステンレス鋼基板、２２はＰ型アモルファスシリコンカ
ーバイト層、２８はｎ型アモルファスシリコン層、２４
はｎ型アモルファスシリコン層、２５は透明導電層、２
６は太陽光線である。ステンレス鋼基板２１は０．１１
１１３Ｌ〜２Ｂ厚を使用し、鏡面研磨した側にモノシラ
ン（ＳｉＨ４）、メタン（ＣＨ４）およびジボラン（Ｂ
ｇＨａ）の混合ガスをグロー放１１解し、Ｐ型アモルフ
ァスシリコンカーバイト層２２を形成する。その厚みは
約５０ＯＡである。次にモノシランのみをグロー放電分
解しｉ型アモルファスシリコン層２８を約５００ＯＡ形
成し、さらにモノシランとホスフィン（ＰＨ３）の〜５
０００Ａ程度形成する。FIG. 3 is a sectional view showing the structure of an amorphous silicon thin film photovoltaic device according to an embodiment of the present invention), 21 is a stainless steel substrate, 22 is a P-type amorphous silicon carbide layer, and 28 is an n-type amorphous layer. silicon layer, 24
is an n-type amorphous silicon layer, 25 is a transparent conductive layer, 2
6 is the sun's rays. Stainless steel substrate 21 is 0.11
113L to 2B thickness, monosilane (SiH4), methane (CH4) and diborane (B
A mixed gas of gHa) is released in a glow 11 to form a P-type amorphous silicon carbide layer 22. Its thickness is approximately 50OA. Next, monosilane alone is decomposed by glow discharge to form an i-type amorphous silicon layer 28 of about 500 OA, and then monosilane and phosphine (PH3) of ~500 OA are formed.
000A is formed.
このようにして作製したアモルファスシリコン薄膜光起
電力素子の光電変換効率は８．０％ であり、一方間構
造でＰ型層にアモルファスシリコンを用いた従来例の素
子の光電変換効率は７．２％にとどまり、本発明により
高い変換効率を有するアモルファスシリコン薄膜光起電
力素子を得ることがわかる。またＰ型アモルファスシリ
コンカーバイト層の光学的エネルギーギャップが１．８
ｅＶであるの層を用いた方がＰ型アモルファスシリコ
ン層を用いるよりもｎ型アモルファスシリコン層との界
面における伝導帯の落差が大きいため充分な光起電力効
果が得られる。さらに吸収係数は光学的エネルギーギャ
ップに対応して、Ｐ型アモルファスシリコンカーバイト
層の方がＰ型アモルファスシリコン層よりも小さいため
、Ｐ型層を約５ｏｏＸと厚くしても吸収閂が小さくステ
ンレス基板での反射光を充分に活用できる。また、Ｐ型
層を約５００Ａと厚くできる結果、Ｐ型層が島状となら
ず、均一な薄膜となるためＰ−ｉ接合を明確に形成する
ことが可能となる。さらにステンレス基板を用いるため
、ガラス基板に比べ、割れることもなく丈夫でフレキシ
ブルなアモルファスシリコン薄膜光起電力素子を得る事
ができる。The photoelectric conversion efficiency of the amorphous silicon thin film photovoltaic device produced in this way is 8.0%, while the photoelectric conversion efficiency of a conventional device with an interlayer structure and using amorphous silicon for the P-type layer is 7.2%. %, indicating that the present invention provides an amorphous silicon thin film photovoltaic device with high conversion efficiency. Furthermore, the optical energy gap of the P-type amorphous silicon carbide layer is 1.8.
When using a layer with a voltage of eV, a sufficient photovoltaic effect can be obtained because the conduction band drop at the interface with the n-type amorphous silicon layer is larger than when using a p-type amorphous silicon layer. Furthermore, the absorption coefficient of the P-type amorphous silicon carbide layer is smaller than that of the P-type amorphous silicon layer, corresponding to the optical energy gap. You can make full use of the reflected light. Furthermore, since the P-type layer can be made as thick as about 500 Å, the P-type layer does not become island-like and becomes a uniform thin film, making it possible to clearly form a P-i junction. Furthermore, since a stainless steel substrate is used, an amorphous silicon thin film photovoltaic element that is more durable and flexible than a glass substrate can be obtained without breaking.
本発明による上述の実施例では、グロー放電分解法に関
して説明したが、水素雰囲気中での反応性スパッタリン
グ法によってアモルファスシリコン薄膜を形成してもよ
い。また、用いる基板についてもステンレス鋼のみなら
ず、他の金属などの導電性基板あるいは金属を蒸着した
基板を用いても構わない。In the above-described embodiments of the present invention, the glow discharge decomposition method was described, but the amorphous silicon thin film may also be formed by a reactive sputtering method in a hydrogen atmosphere. Furthermore, the substrate used is not limited to stainless steel, but may also be a conductive substrate made of other metals or a substrate coated with a vapor-deposited metal.
以上詳細に説明したごとく、本発明によれば高い光電変
換効率を有するアモルファスシリコン薄膜光起電力素子
が得られる。また、充分な光起電力効果を持ち、基板で
の反射光を有効に活用できるアモルファスシリコン薄膜
光起電力素子が得られる。さらに丈夫でフレキシブルな
アモルファスシリコン薄膜光起電力素子が得られる。As described in detail above, according to the present invention, an amorphous silicon thin film photovoltaic device having high photoelectric conversion efficiency can be obtained. Moreover, an amorphous silicon thin film photovoltaic element having a sufficient photovoltaic effect and capable of effectively utilizing reflected light from the substrate can be obtained. A more durable and flexible amorphous silicon thin film photovoltaic device can be obtained.
第１図は従来のアモルファスシリコン薄膜光起電力素子
の構造を示す断面図であり、第２図は従来の他のアモル
ファスシリコン薄膜光起電力素子の構造を示す断面図で
あり、第３図は本発明による１実施例のアモルファスシ
リコン薄膜光起電力素子の構造を示す断面図である。
１．２１ニステンレス鋼基板
２：Ｐ型アモルファスシリコン層
３．１４．２３：ｎ型アモルファスシリコン層４．１５
．２４：ｎ型アモルファスシリ３７層５．１２．２５：
透明導電層
１６：電極FIG. 1 is a sectional view showing the structure of a conventional amorphous silicon thin film photovoltaic device, FIG. 2 is a sectional view showing the structure of another conventional amorphous silicon thin film photovoltaic device, and FIG. FIG. 1 is a cross-sectional view showing the structure of an amorphous silicon thin film photovoltaic device according to an embodiment of the present invention. 1.21 Stainless steel substrate 2: P-type amorphous silicon layer 3.14.23: N-type amorphous silicon layer 4.15
．． 24: 37 layers of n-type amorphous silicon 5.12.25:
Transparent conductive layer 16: electrode
Claims (2)
シリコン層、ｉ型アモルファスシリコン層、ｐ型アモル
ファスシリコンカーバイド層および基板で構成されるこ
とを特徴とするアモルファスシリコン薄膜光起電力素子
。(1) An amorphous silicon thin film photovoltaic device comprising, in order from the light incident side, a transparent conductive layer, an n-type amorphous silicon layer, an i-type amorphous silicon layer, a p-type amorphous silicon carbide layer, and a substrate.
特許請求の範囲第１項記載のアモルファスシリコン薄膜
光起電力素子。(2) The amorphous silicon thin film photovoltaic device according to claim 1, wherein the substrate is made of stainless steel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57055344A JPS58173872A (en) | 1982-04-05 | 1982-04-05 | Amorphous si thin film photovoltaic force element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57055344A JPS58173872A (en) | 1982-04-05 | 1982-04-05 | Amorphous si thin film photovoltaic force element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58173872A true JPS58173872A (en) | 1983-10-12 |
Family
ID=12995884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57055344A Pending JPS58173872A (en) | 1982-04-05 | 1982-04-05 | Amorphous si thin film photovoltaic force element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58173872A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10934172B2 (en) * | 2011-04-21 | 2021-03-02 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | In situ grown SiC coatings on carbon materials |
-
1982
- 1982-04-05 JP JP57055344A patent/JPS58173872A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10934172B2 (en) * | 2011-04-21 | 2021-03-02 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | In situ grown SiC coatings on carbon materials |
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