JPS58172286A - Production of single crystal body - Google Patents
Production of single crystal bodyInfo
- Publication number
- JPS58172286A JPS58172286A JP57055799A JP5579982A JPS58172286A JP S58172286 A JPS58172286 A JP S58172286A JP 57055799 A JP57055799 A JP 57055799A JP 5579982 A JP5579982 A JP 5579982A JP S58172286 A JPS58172286 A JP S58172286A
- Authority
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- Japan
- Prior art keywords
- single crystal
- polycrystal
- joined
- same
- compsn
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Soft Magnetic Materials (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、酸化物単結晶体の製造法に関するもので、そ
の目的は、従来の単結晶体の製造法に比して組成偏析の
少ない、均質な制御された結晶方位を有する単結晶体を
、安価で多量に市場に提供することにある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing an oxide single crystal, and an object of the present invention is to produce a homogeneous, controlled crystal with less compositional segregation compared to conventional methods for producing single crystals. The purpose of the present invention is to provide the market with a large quantity of oriented single crystals at low cost.
現在、各種の無機化合物単結晶体が比較的高価にもかか
わらず、機械的特性、物理的特性、および化学的特性等
が多結晶体に比べて優れているため、電子部品構成材料
として非常に多く使用されており、その使用量は、年々
増加の一途をたどっでいる。すなわち、半導体素子にお
ける単結晶体シリコン、磁気ヘッド用磁性材料のＭｎ−
Ｚｎ−フェライト単結晶体、発光素子用のＧａＰ単結晶
体、発振素子用の単結晶体水晶等その他多くの単結晶体
が工業的規模で生産されている。これらの単結晶体の製
造法としては、チョクラルスキー法、プク
リッジマン法、ベルヌーイ法、フラッ→ス法、オよび水
熱合成法等各種の方法があるが、いずれの方法も単結晶
体育成に相当な時間を要し、また育成期間中の製造装置
の制御には細心の注意を必要とする。得られた単結晶体
にも、組成の偏析、クラックの発生、多結晶体の混在と
いった問題がある。また、ルツボを用いるものでは、溶
解用ルツボから混入する不純物、フラックスを用いる場
合では、フラックスの混入等、多数の欠陥を生じゃすく
、そのため良品の歩留り率が低い。さらに、結晶方位の
制御も充分なされないものが多いなど、解決されなけれ
ばならない問題が多く残されている。Currently, although various single crystal inorganic compounds are relatively expensive, their mechanical, physical, and chemical properties are superior to polycrystalline materials, making them extremely popular as constituent materials for electronic components. It is widely used, and its usage continues to increase year by year. That is, single crystal silicon in semiconductor elements, Mn- in magnetic materials for magnetic heads,
Many other single crystals, such as Zn-ferrite single crystals, GaP single crystals for light emitting devices, and single crystal quartz for oscillation devices, are produced on an industrial scale. There are various methods for producing these single crystals, such as the Czochralski method, the Pukridgeman method, the Bernoulli method, the Fruss method, and the hydrothermal synthesis method, but all methods are difficult to grow single crystals. It takes a considerable amount of time and requires great care in controlling the manufacturing equipment during the growing period. The obtained single crystal also has problems such as compositional segregation, cracking, and the presence of polycrystals. Furthermore, in the case of using a crucible, many defects occur such as impurities mixed in from the melting crucible, and in the case of using flux, contamination of flux, etc., resulting in a low yield rate of good products. Furthermore, many problems remain to be solved, such as insufficient control of crystal orientation in many cases.
本発明は、これら従来からある単結晶体の製造法とは異
なった、同相反応による単結晶体の育成法、すなわち、
希望する単結晶体と、この単結晶体と同組成、もしくは
それに近い組成で、かつそれと同じ結晶構造を有する多
結晶体とを接合し、この接合体を熱処理することにより
、多結晶体を、単結晶と同じ結晶方位、結晶構造をもつ
単結晶体に育成する（以後、この方法を１接合型単結晶
体製造法」と呼ぶ）に際して、多結晶体にＮａもしくは
Ｃａの少なくともいずれか一方を０．０１〜２．５重量
％含有させておくことを特徴とする。The present invention provides a method for growing a single crystal by an in-phase reaction, which is different from these conventional methods for producing a single crystal.
By joining a desired single crystal and a polycrystal having the same composition, or a composition close to it, and the same crystal structure as the single crystal, and heat-treating this joined body, the polycrystal can be made into a polycrystal. When growing a single crystal with the same crystal orientation and crystal structure as a single crystal (hereinafter this method will be referred to as the "one-junction single crystal manufacturing method"), at least one of Na or Ca is added to the polycrystal. It is characterized by containing 0.01 to 2.5% by weight.
以下に、さらに詳しく本発明の製造法について説明する
。Below, the manufacturing method of the present invention will be explained in more detail.
第１図は本発明の詳細な説明するための図で、同図＾は
単結晶体と多結晶体の接合体を、また同図（Ｂ）はこの
接合体を適当な条件下で熱処理した後の様子を示してい
る。図において、１は単結晶体、２は多結晶体で、単結
晶体１と同組成、もしくはほぼ同じ組成であって、それ
と同じ結晶構造を有する。３は単結晶体１と多結晶体２
との接合界面である。単結晶体１、多結晶体２とも接合
面の表面は凹凸が少ないものである程よく、鏡面にまで
仕上げられるのが好ましい。単結晶体１と多結晶体２と
の接合方法にはホットプレス、不活性雰囲気中での熱間
静水圧プレス、雰囲気制御下での熱処理等の方法がある
。なお、同図（Ｂ）において、４は多結晶体２側に移動
してきた接合界面、６は界面４が移動した後に形成され
た多結晶体から単結晶体に変化した部分である。Figure 1 is a diagram for explaining the present invention in detail, and Figure 1 shows a bonded body of a single crystal and a polycrystalline body, and Figure 1 (B) shows this bonded body heat-treated under appropriate conditions. It shows what happens after. In the figure, 1 is a single crystal, and 2 is a polycrystal, which has the same composition or almost the same composition as the single crystal 1, and has the same crystal structure. 3 is single crystal 1 and polycrystal 2
This is the bonding interface between the In both the single crystal body 1 and the polycrystalline body 2, the surface of the bonded surface should have as few irregularities as possible, and it is preferable that the surface be finished to a mirror surface. Methods for joining the single crystal body 1 and the polycrystal body 2 include hot pressing, hot isostatic pressing in an inert atmosphere, heat treatment under controlled atmosphere, and the like. In the same figure (B), 4 is the bonding interface that has moved to the polycrystalline body 2 side, and 6 is the part that has changed from the polycrystalline body formed after the interface 4 has moved to the single crystalline body.
本発明の方法で用いられる多結晶体としては、接合界面
の移動がスムーズに行なわれるように、粒径が小さく、
気孔のほとんどないものであることが望ましい、粒径が
小さい程、接合界面が多結晶体側に移動するための駆動
力が大きい。そして、気孔は界面が移動するときにその
抵抗として働くため、これが少ない程、単結晶体化しや
すい。The polycrystalline material used in the method of the present invention has a small grain size so that the bonding interface can move smoothly.
It is desirable that the particles have almost no pores, and the smaller the particle size, the greater the driving force for moving the bonding interface toward the polycrystalline body. Since pores act as resistance when the interface moves, the smaller the number of pores, the easier it is to form a single crystal.
発明者等は、この「接合型単結晶体製造法」において、
いかに効率よく、均質な単結晶体を育成するかについて
種々検討した結果、多結晶体にある種の添加物を含有さ
せておくと、界面移動速度をいちぢるしく高めることが
できることを発見した。これまで、多結晶体に不純物を
含有させると、この不純物が粒界に析出し、結晶粒界の
移動を阻止する効果をもつと考えられていた。発明者等
は、たとえば磁気ヘッド用材料の立方晶スピネル型構造
のＭｎ−Ｚｎ−フェライトを実験材料として用い、添加
物として、Ｓ １０２ 、 Ｃａω３． Ｎａ２ＣＯａ
、 Ａｔ ２０８゜ＴｔＯ２，Ｃｕ２Ｏ，ＮｔＯ、Ｃ
ｒ２Ｏ３を０．００１〜１．０重量％（以下ｗｔ％ を
記す）の範囲で、多結晶体に加えたものを作り、接合型
単結晶体製造法の実験を行なった。その結果、ＣａＣＯ
ａとＮａ２ＣＯ３を加えて作製した多結晶体において、
界面移動速度が無添加の多結晶体に比べて６〜１０倍と
いちぢるしく大きくなり、しかも添加量の有効範囲が存
在することを新たに見出した。また、得られた単結晶体
は、物理的、化学的、機械的特性の点でも優れたもので
あることが明らかになった。The inventors, in this "joint type single crystal production method",
As a result of various studies on how to efficiently grow homogeneous single crystals, we discovered that by incorporating certain additives into polycrystals, the speed of interfacial movement can be significantly increased. . Until now, it has been thought that when a polycrystalline body contains impurities, these impurities precipitate at grain boundaries and have the effect of inhibiting grain boundary movement. The inventors used, for example, Mn-Zn-ferrite with a cubic spinel structure, which is a material for magnetic heads, as an experimental material, and added S 102 , Caω3. Na2COa
, At 208°TtO2,Cu2O,NtO,C
A polycrystal was prepared in which r2O3 was added in a range of 0.001 to 1.0% by weight (hereinafter referred to as wt%), and an experiment was conducted on a bonded single crystal manufacturing method. As a result, CaCO
In the polycrystalline body made by adding a and Na2CO3,
It has been newly discovered that the interfacial movement speed is significantly higher, 6 to 10 times that of a polycrystal without additives, and that there is an effective range of the amount added. It was also revealed that the obtained single crystal had excellent physical, chemical, and mechanical properties.
そこで、発明者等は、これらの多結晶体を化学分析する
ことにより、多結晶体に含まれている、Ｃａ、Ｎａの含
有量を求め、この含有量と界面移動速度との関係を調べ
た。その代表的な結果を第２図に示す。横軸は、多結晶
体中に含まれるＮａ。Therefore, the inventors chemically analyzed these polycrystals to determine the content of Ca and Na contained in the polycrystals, and investigated the relationship between this content and the interfacial movement speed. . The typical results are shown in FIG. The horizontal axis represents Na contained in the polycrystal.
Ｃａの含有量ｘ （ｗｔ％）を表わし、縦軸はＮａ。The Ca content x (wt%) is represented, and the vertical axis is Na.
およびＣ＆を無添加しなかった場合の界面移動距離ＬＯ
と、添加した場合の界面移動距離りの比Ｌ／Ｌｏを示し
たものである。多結晶体の種類が異なれば、若干の値の
変化があるが、全体の傾向としては同じである。Ｎａお
よびＣａの無添加の場合でも、この実験で使用した多結
晶体には、最初から不純物としてそれぞれ０，００６ｗ
ｔチ、 ０．００７ｗｔ％含まれていることが化学分析
、原子吸光分析等の方法により判明している。この第２
図では、Ｍｎ Ｚｎ ７ ｘライトにＮａ、Ｃａをそ
れぞれＮａ２Ｃｏ３、ＣａＣ０ａの形で単独添加した場
合の界面移動距離の比、すなわち界面移動速度の比との
関係を示すものであり、Ｎａの含有量が０．０１〜０．
２５ｗｔ％の範囲内で、Ｌ／Ｌｏが６〜８の値となり、
Ｃａの含有量についても同様に０．０１−０．２５ｗ
ｔ ％の範囲内で、Ｌ／Ｌｏの値がいちぢるしく大きく
なっている。Ｎａ、Ｃａをともに添加含有させた場合の
効果はＮａおよびＣａからの効果の単純な和にはならず
ミそれぞれの値の１〜３割増になった。Ｎａ量が０．２
５ｗｔ％を越える範囲では、第１図（Ｂ）に示した多結
晶体２側の結晶粒が熱処理時に急激に非常に大きくなり
、そのため界面を移動させる駆動力がいちぢるしく小さ
くなるため、かえって移動距離りが小さくなった。Ｃ＆
の場合、その量が０．２６ｗｔ％ を越える範囲では、
熱処理時に、多結晶体２の結晶粒の粒界にＣａＯが析出
し、界面移動の際の抵抗となり、移動速度が急激に低下
した。ＮａおよびＣａの含有量が０．０１ｗｔ％より少
なくなると、効果も薄れることがわかった。and interfacial migration distance LO when C& is not added.
and the ratio L/Lo of the interfacial movement distance when added. Although the values vary slightly depending on the type of polycrystal, the overall trend is the same. Even if Na and Ca were not added, the polycrystalline material used in this experiment contained 0,006 w of each as an impurity from the beginning.
It has been determined by methods such as chemical analysis and atomic absorption spectrometry that it contains 0.007 wt%. This second
The figure shows the relationship between the ratio of interfacial migration distances, that is, the ratio of interfacial migration speeds, when Na and Ca are individually added in the form of Na2Co3 and CaC0a to MnZn7xlite, and the Na content is 0.01~0.
Within the range of 25wt%, L/Lo has a value of 6 to 8,
Similarly, the content of Ca is 0.01-0.25w.
Within the range of t%, the value of L/Lo becomes significantly large. When both Na and Ca were added, the effect was not simply the sum of the effects from Na and Ca, but increased by 10 to 30% of the respective values. Na amount is 0.2
In a range exceeding 5 wt%, the crystal grains on the polycrystalline body 2 side shown in FIG. On the contrary, the distance traveled has become smaller. C&
If the amount exceeds 0.26wt%,
During the heat treatment, CaO precipitated at the grain boundaries of the crystal grains of the polycrystalline body 2, creating resistance during interfacial movement and causing a rapid decrease in the movement speed. It was found that when the content of Na and Ca was less than 0.01 wt%, the effect was weakened.
このように、接合型単結晶体製造法では、多結晶体への
添加物の種類と、添加量をコントロールすることにより
、優れた特性をもつ単結晶が得られるものである。Thus, in the bonded single crystal production method, a single crystal with excellent properties can be obtained by controlling the type and amount of additives added to the polycrystal.
本発明の方法を適用できる酸化物単結晶体は、単にＭｎ
−Ｚｎフェライトだけではなく、たとえばＮＬ−Ｚｎｎ
フジイ、ト、その他のフェライト、ＹＩＧ（イツトリウ
ム鉄ガーネット）、ＭｇＡ１２０４（スピネル）等であ
り、この方法は現在市場で使われている多数の単結晶体
の製造に応用できるものである。The oxide single crystal to which the method of the present invention can be applied is simply Mn
-Not only Zn ferrite, but also NL-Znn
Fujii, To, other ferrites, YIG (yttrium iron garnet), MgA1204 (spinel), etc., and this method can be applied to the production of many single crystals currently used on the market.
次に、本発明の方法の実施例について説明する。Next, examples of the method of the present invention will be described.
実施例１
厚さ１．５ｍｍ、幅７１ｍ１．長さ２０ｙｍであって、
接合面（７Ｘ２０−面）が（１ｏｏ）面で、１．５Ｘ７
−の面が（１１０）面であるＭｎ−Ｚｎフェライト単結
晶体（組成： ＭｎＯ２５モ／ｌ／％ 、 ＺｎＯ２Ｓ
％）Ｌ／％。Example 1 Thickness: 1.5 mm, width: 71 m1. The length is 20 ym,
The joint surface (7X20-plane) is (1oo) plane, 1.5X7
- Mn-Zn ferrite single crystal whose plane is (110) (composition: MnO25mol/l/%, ZnO2S
%) L/%.
Ｆｅ２０３６０モル％ ）と、同組成で平均結晶粒径が
１６μｍ、気孔率が０．０１％以下、不純物としてＳ
１０２を０．０１ｗｔ％以下、Ａｌ２Ｏ３を０．０１ｗ
ｔ％以下、ＣａＯを０．００１ｗｔ％以下、ＮａＯを０
．００１ｗｔ％ 以下含むホットプレス焼結体、ＮａＯ
を０．１０ｗｔ％（Ｎａとして約ｏ、ｏｅｗｔ％）含み
、他の条件は同じであるホットプレス焼結体、およびＣ
ａｄｉｏ、１ｏｗｔｑ６（Ｃａとして約０．０７ｗｔ％
）含み、他のの寸法に切シ出した。これらの接合面を
鏡面に仕上けた後、希硝酸を塗布して接合し、この接合
体を昇温速度１００’Ｃ／時間で１２８０℃まで昇温し
、０．３ ％ Ｎ２ガスを含むＮ２ガス中（流量は０．
２２Ａ＋ で、試料を内径６０閣の炉芯管内に設置）で
１２時間熱処理した。なお、昇温、降温時の雰囲気は、
Ｎ２ガス（流量はｏ、２１／ｆｋ ）を用いた。Fe20360 mol%) with the same composition, average crystal grain size of 16 μm, porosity of 0.01% or less, and S as an impurity.
0.01wt% or less of 102, 0.01w of Al2O3
t% or less, CaO 0.001wt% or less, NaO 0
．． Hot pressed sintered body containing 001wt% or less, NaO
A hot pressed sintered body containing 0.10 wt% (about o, oewt% as Na), other conditions being the same, and C
adio, 1owtq6 (approximately 0.07wt% as Ca
) included and cut to other dimensions. After finishing these bonded surfaces to a mirror surface, dilute nitric acid was applied to bond them, and this bonded body was heated to 1280°C at a heating rate of 100'C/hour, and then heated using N2 gas containing 0.3% N2 gas. Medium (flow rate is 0.
The sample was heat-treated for 12 hours at 22A+ (installed in a furnace core tube with an inner diameter of 60 mm). The atmosphere during temperature rise and fall is as follows:
N2 gas (flow rate: o, 21/fk) was used.
降温は約り００℃／時間の速度で行なった。熱処理後、
試料体の中央部分をダイヤモンドカッターで切断し、こ
の切断面を鏡面ラップした後、６０℃Ｊ
の８ Ｎ−Ｈｗ＊溶液を用いてエッチし、単結晶体化距
離Ｌ′ｌ＆−測定した。その結果、Ｎａ、Ｃａを添加し
ていない試料を用いた場合では、ＬＯ”１５１１１１で
あり、Ｎａ添加の試料を用いた場合ではＬ ＝ １０ｍ
ｍで、Ｃａ添加の試料を用いた場合ではＬ＝１４ｍｓで
あった。熱処理後、多結晶体の単結晶化していない部分
の平均結晶粒径を光学顕微鏡観察で調べたところ、約２
０μｍと大きくなっていた。また、単結晶化した部分の
７エライトの磁気特性は、接−合に用いた単結晶体とほ
ぼ同じであった。The temperature was lowered at a rate of approximately 00°C/hour. After heat treatment,
The center portion of the sample body was cut with a diamond cutter, the cut surface was lapped to a mirror finish, and then etched using an 8 N-Hw* solution at 60°C, and the distance L'l&- of single crystal formation was measured. As a result, when using a sample with no addition of Na or Ca, the LO was 151111, and when using a sample with Na addition, L = 10 m.
m, and when a Ca-added sample was used, L=14 ms. After heat treatment, the average crystal grain size of the portion of the polycrystalline body that has not become a single crystal was examined using an optical microscope, and was found to be approximately 2.
It was as large as 0 μm. Furthermore, the magnetic properties of the single crystallized portion of 7-elite were almost the same as those of the single crystal used for bonding.
実施例２
実施例１と同様の形状に加工したＹＩＧ（イツトリウム
鉄ガーネット）単結晶体（７Ｘ２０−の面を接合面とし
、（１１ｏ）を利用）と、このＹＩＧ単結晶体と同組成
で、平均結晶粒径が５μｍ、気孔率がｏ、ｏｓ％、不純
物としてＳｉＯ２を０．０１ｗｔ％以下、ＣａＯを０．
００５ｗ ｔ ％以下、ＮａＯを０．００１ｗ ｔ ％
以下含むホットプレス焼結体、ＮａＯを０．２０ｗｔ
％（Ｎａとして約０．１２ｗｔ％）含み、他の諸条件が
同じホットプレス焼結体、およびＣａＯを０．０６ｗｔ
％（Ｃａとして約０．０３６ｗｔ％ ）、０．２０ｗｔ
％（Ｃａとして約０．１７ｗｔ％ ）含み、他の条件に
ついては最初合肥したものと同一のホットプレス焼結体
の四種類の多結晶体を、互いに接合面（７×２０−の面
）をラップにより鏡面仕上げにした後、６Ｎの硝酸を接
合面に塗布して接合した。この接合体をＮ２ガス中（流
量０．２１Ａ＋）において１ω℃／時間で１３５０℃に
まで昇温し、次にＮ２−０．．３％Ｎ２ガス中（流ｉ
０．２ Ｉｔ／分）で１２時間加熱を行なった後、再度
Ｎ２ガス中で４００℃／時間で降温した。熱処理後、単
結晶化距離りを測定したところ、無添加の場合では３
ｇＢ 、 Ｎａ添加の場合では２０ｗＲ，０，０５ｗｔ
％ ＣａＯ（０，０３６ｗｔ％Ｃａ ）添加のもので
は２１ ｍｍ 、 ０．２０ｗｔ％ＣａＯ（０，１７ｗ
ｔ％Ｃａ ）添加のものでは１９簡であった。なお、比
較のため、Ｎ ａ Ｏを０．５０ｗｔ％（Ｎ ａとして
０２９ｗ ｔ ％ ）含むもの、ＣａＯを０．７０ｗｔ
％ （Ｃａとして０．５０ｗｔ％）含む多結晶体を用い
て前述と同じ実験をした結果、Ｌはそれぞれ３．５ｍｍ
、 ３．３ｍｍであった。Example 2 A YIG (yttrium iron garnet) single crystal processed into the same shape as in Example 1 (with the 7x20- plane as the bonding surface and (11o) used), with the same composition as this YIG single crystal, The average crystal grain size is 5 μm, the porosity is o, os%, and the impurities include SiO2 of 0.01 wt% or less and CaO of 0.
0.005wt% or less, NaO 0.001wt%
Hot pressed sintered body containing the following, 0.20wt NaO
% (approximately 0.12 wt% as Na) and other conditions are the same, and 0.06 wt% of CaO.
% (approximately 0.036wt% as Ca), 0.20wt
% (approximately 0.17 wt% as Ca), and other conditions were the same as those originally produced in Hefei. After giving a mirror finish by lapping, 6N nitric acid was applied to the bonding surfaces to bond them. This bonded body was heated to 1350°C at a rate of 1ω°C/hour in N2 gas (flow rate 0.21A+), and then N2-0. ．． In 3% N2 gas (flow i
After heating at 0.2 It/min) for 12 hours, the temperature was lowered again at 400°C/hour in N2 gas. After heat treatment, the single crystallization distance was measured, and it was 3 in the case without additives.
gB, 20wR, 0.05wt in case of Na addition
% CaO (0,036 wt% Ca) added 21 mm, 0.20 wt% CaO (0,17 w
t%Ca) addition was 19 times. For comparison, one containing 0.50wt% NaO (029wt% as Na) and 0.70wt% CaO
As a result of conducting the same experiment as above using a polycrystal containing % (0.50 wt% as Ca), L was 3.5 mm in each case.
, 3.3 mm.
施するための単結晶体と多結晶体の接合体を示す斜視図
、同図（Ｂ）は同じく熱処理した後の様子を示す斜視図
である。第２図は本発明の方法で用いられる多結晶体中
に含まれるＮａならびにＣａの含有量Ｘと、単結晶体化
距離Ｌ：／Ｌｏとの関係を示す曲線図である。A perspective view showing a bonded body of a single crystal and a polycrystalline body to be subjected to heat treatment, and FIG. FIG. 2 is a curve diagram showing the relationship between the content X of Na and Ca contained in the polycrystalline material used in the method of the present invention and the distance L:/Lo of forming a single crystal.
１・・・・・・単結晶体、２・・・・・・多結晶体、３
，４・・・・・・−合界面、６・・・・・・単結晶体化
した部分。1...Single crystal, 2...Polycrystal, 3
, 4...--combination surface, 6...--portion that has become a single crystal.
第１図 ４２ トー一安−門Figure 1 42 Toichian Gate
Claims (1)
構造および組成を有する多結晶体とを接合した状態で熱
処理することにより、前記多結晶体を単結晶体に育成す
るに際して、前記多結晶体一 晶体製造法。[Scope of Claims] A single crystal and a polycrystal having the same or almost the same crystal structure and composition as the single crystal are heat-treated in a bonded state, thereby converting the polycrystal into a single crystal. When growing, the polycrystalline monocrystalline manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57055799A JPS58172286A (en) | 1982-04-02 | 1982-04-02 | Production of single crystal body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57055799A JPS58172286A (en) | 1982-04-02 | 1982-04-02 | Production of single crystal body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58172286A true JPS58172286A (en) | 1983-10-11 |
| JPS6215516B2 JPS6215516B2 (en) | 1987-04-08 |
Family
ID=13008955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57055799A Granted JPS58172286A (en) | 1982-04-02 | 1982-04-02 | Production of single crystal body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58172286A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5792591A (en) * | 1980-11-28 | 1982-06-09 | Ngk Insulators Ltd | Production of single crystal |
-
1982
- 1982-04-02 JP JP57055799A patent/JPS58172286A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5792591A (en) * | 1980-11-28 | 1982-06-09 | Ngk Insulators Ltd | Production of single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6215516B2 (en) | 1987-04-08 |
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