JPS58170079A - Semiconductor photodetecting element - Google Patents
Semiconductor photodetecting elementInfo
- Publication number
- JPS58170079A JPS58170079A JP57053280A JP5328082A JPS58170079A JP S58170079 A JPS58170079 A JP S58170079A JP 57053280 A JP57053280 A JP 57053280A JP 5328082 A JP5328082 A JP 5328082A JP S58170079 A JPS58170079 A JP S58170079A
- Authority
- JP
- Japan
- Prior art keywords
- type
- znte
- gasb
- layer
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 6
- 229910007709 ZnTe Inorganic materials 0.000 abstract 7
- 229910005542 GaSb Inorganic materials 0.000 abstract 5
- 125000005842 heteroatom Chemical group 0.000 abstract 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
本発明は可視光領域を含む広範囲の波長領域（０，５５
戸罵〜１．８μｍ）で使用可能な半導体受光素子に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention is applicable to a wide range of wavelengths including the visible light region (0,55
The present invention relates to a semiconductor light-receiving element that can be used with a diameter of 1.8 μm.
従来技術ｉ問題点
可視光を受光することができる従来の素子としては、Ｇ
ｄＳ結晶を用いた光起電力型、光導電型の素子、或は１
ｌｓＴ−とＺｎ＆−とのへテロ接合を利用した素子があ
る。このうち、ＣｄＳ結晶を用いた素子は、光から電気
への交換効率及び応答特性に間層がある。また、ｚＳＴ
・とＺ％Ｓ−とのへテロ接合な利用した素子は、両者の
格子定数（Ｉｎ？’ｇ −６，１０３Ａ。Prior art i Problems As a conventional element that can receive visible light, G
Photovoltaic type or photoconductive type element using dS crystal, or 1
There is an element that utilizes a heterojunction between lsT- and Zn&-. Among these, elements using CdS crystals have poor light-to-electricity exchange efficiency and response characteristics. Also, zST
The device used is a heterojunction of .
Ｚ＊５ａ−５，６６７Ａ）が大きく異なるものであるか
ら、格子不整合に起因した欠点（例えば、素子の機械的
な歪み一二伴なう信頼性の低下、界面準位密度の増加に
伴なう耐逆電圧特性の低下等）があった。Z*5a-5,667A) are significantly different from each other, so defects caused by lattice mismatch (e.g., decreased reliability due to mechanical distortion of the device, increased interface state density) There was a decrease in reverse voltage resistance, etc.).
発明の目的
本発明は前述の如き欠点を改善したものであり、その目
的は、信頼性、応答特性（；優れ、且つ可視光領域を含
む広範囲の波長領域（０，５５声簿〜１．８μ罵）で使
用可能な半導体受光素子を提供すること６二ある。以下
実施鋼重＝ついて詳細１二説明する。Purpose of the Invention The present invention has been made to improve the above-mentioned drawbacks.The purpose of the present invention is to improve reliability, response characteristics (; It is an object of the present invention to provide a semiconductor light-receiving device that can be used in the following.
発明の実施例
第１図は本発明の実施例の断面図であり、１はＰ形１１
ｎＴｇ基板、２はＰ形Ｇａ５ｈ層、３はル形Ｇｕｓｈ層
、４はル側電極、５はＰ側電極、６は凹部であり、該凹
部６より光を入射させるものである。尚、同図６＝示し
た素子は逆バイアスを印加しておき、光が入射すること
（二より増加する逆方向電流に基づいて光の検出を行な
うものである。第２図は第１図に示した素子のエネルギ
ーバンド図であり、光の入射により励起されたキャリア
のうち、少し、これ６：より逆方向電流が増加するもの
である。Embodiment of the invention FIG. 1 is a sectional view of an embodiment of the invention, where 1 is a P-type 11
In the nTg substrate, 2 is a P-type Ga5h layer, 3 is a square-shaped Gush layer, 4 is a square-side electrode, 5 is a P-side electrode, and 6 is a concave portion through which light is incident. The element shown in Figure 6 is applied with a reverse bias and detects light based on the reverse current which increases from the incidence of light (2). Figure 2 is similar to Figure 1. 6 is an energy band diagram of the device shown in FIG. 6. Of the carriers excited by the incidence of light, the reverse current increases slightly.
第１図Ｉ：示した素子を製造するにはＰ形；ＺｎＴｇ面
（−マスクを設け、次に例えばＨＣｔ ： ＨＮＯ，亡
１：１のエツチング液を用いてエツチングを行ない、凹
部６を形成する。そして、この後、ル側電極４、Ｐ形電
極５を形成し、第１図に示した素子を得る。尚、ＺｎＴ
−は自己補償作用の為、ｐ形の結晶しか作成できないが
、気相成長法、液相成長法により、品質の良い結晶を得
ることができる。FIG. 1 I: To manufacture the device shown, a P-type; ZnTg surface (- mask is provided and then etching is performed using an etching solution of, for example, HCt:HNO, 1:1 to form the recesses 6. Then, after this, a side electrode 4 and a P-type electrode 5 are formed to obtain the element shown in FIG.
- is self-compensating, so only p-type crystals can be produced, but high-quality crystals can be obtained by vapor phase growth or liquid phase growth.
第３図は第１図の光電変換素子の光波長（二対する外部
量子効率を示したも１のであり、同図から明１ ６
カ、ヶよう。ユ、第、９゜光電変、素子、よ、ユ視域（
緑色）である波長が０．５５μ肩の光から赤外域である
波長が１．８μｍの光まで、広範囲の波長領域の光を受
光することができる。また第１図（二示した素子は、Ｐ
形ＺｓＴ−基板１上Ｃｐ形Ｇａ５ｈ層２、話形Ｇｕｓｈ
ｙｍＢを順次成長させたものであり、ｆｌａｒｅとＧ
ｕｓｈとの格子定数（ＺｎＴｇ −６，１０５１，Ｇａ
５ｔｂ−ｂ、０９６１）は、はぼ等しいものであるから
、ＺルＴａ−ＺｎＳ−のへテロ接合を利用した従来素子
のよう（二、素子ｄ：歪みが生じたり、或は界面単位密
度が大となるようなことはなく、従って、素子の信頼性
、耐逆電圧特性を向上させることができる。また、第１
図の素子は逆方向電流を利用して光を検出するようにし
ているものであるから、ＣｄＳ結晶を利用した光起電力
型、光導電型の従来素子よりも応答特性を向上させるこ
とができる。Figure 3 shows the external quantum efficiency for the optical wavelength (2) of the photoelectric conversion element in Figure 1.
Ka, let's go. Yu, No. 9 photoelectric conversion element, Yo, Yu viewing zone (
It is possible to receive light in a wide range of wavelengths, from light with a wavelength of 0.55 μm (green) to light with a wavelength of 1.8 μm in the infrared region. In addition, the elements shown in FIG. 1 (2) are P
Cp type Ga5h layer 2 on type ZsT-substrate 1, talk type Gush
ymB is grown sequentially, flare and G
ush and the lattice constant (ZnTg -6,1051,Ga
5tb-b, 0961) are almost the same, so it looks like a conventional element using a Z-Ta-ZnS- heterojunction (2. Element d: distortion occurs or the interface unit density Therefore, the reliability and reverse voltage resistance characteristics of the device can be improved.
Since the device shown in the figure detects light using a reverse current, it can improve response characteristics compared to conventional photovoltaic and photoconductive devices that use CdS crystals. .
尚、実施例に於いては、Ｐ形ＺｎＴａ基板１上感二ｐ形
Ｇｇ５ｈ層２．３形Ｇｇ５ｈ層３を設けるようシニした
が、Ｐ形、格形Ｇａ５ｈ層２，６の代わり一＝Ｐ形、ｎ
形Ｇａｐ、？・Ｉル０，０２８４層を設けるようＣ１，
ても良い。In the example, a p-type Gg5h layer 2 and a 3-type Gg5h layer 3 were provided on the P-type ZnTa substrate 1, but instead of the P-type and lattice-shaped Ga5h layers 2 and 6, shape, n
Shape Gap,?・C1, so that 0,0284 layers are provided.
It's okay.
ＧＩＩＯ，？Ｉ ｚｓｏ、０２ Ｓｈはその格子定数が
ＺｎＴ−の格子定数と厳密４二等しいものであるから、
前述したと同様（＝、従来素子と比較して信頼性、耐逆
電圧特性を向上させることができる。また、ＧＧＱ、９
＠１１”０．０２８４の禁制帯幅はＧｕｓｈの禁制帯幅
とほぼ等しいものであり（Ｇａｏ、ｐ＠Ｉ＊０．。２Ｓ
ｂｍ Ｑ、４ｆ３ｍＶ、 Ｇａ５ｈ＝−Ｑ、６９ｍＶ）
、素子の受光範囲は素子材料の禁制帯幅（：より決定゛
されるものであるから、Ｇ（！Ｏ，？＄ＩｓＯ，ｇ２Ｓ
ｊを用いた受光素子も、Ｇａ５ｈを用いた受光素子とほ
ぼ同様の受光波長範囲を有することｌ二なる。また、実
施例に於イテは、Ｐ形ＺｎＴａ基板上Ｃｐ形ＧｔｔＳｂ
層、ｓ形Ｇｕｓｈ層を設けるよう４二したが、Ｐ形Ｚｎ
Ｔａ基板上に直接亀形Ｇａ５ｈ層、或はｎ形Ｇａｏ、ｇ
８Ｉ％ｏ、０２８４層を設けるよう一二シても良いこと
は勿論である。また、格子定数がＺルＴ−とほぼ等しい
ものであればＧ”０．９８Ｉｎ（４，（３２８４以外の
ＧｃＢ−ｘｒｌ露、ｓｈを用いても良いことは勿論であ
る。また、実施例は通常のフォトダイオードに本発明を
適用した場合についてのものであるが、アバランシェフ
ォトダイオード等にも本発明を適用できることは勿論で
ある。GIIO,? Since the lattice constant of I zso,02 Sh is exactly 42 equal to the lattice constant of ZnT-,
As mentioned above (=, reliability and reverse voltage resistance characteristics can be improved compared to conventional elements. Also, GGQ, 9
The forbidden band width of @11”0.0284 is almost equal to the forbidden band width of Gush (Gao, p@I*0..2S
bm Q, 4f3mV, Ga5h=-Q, 69mV)
, the light-receiving range of the element is determined by the forbidden band width (:) of the element material, so G(!O,?$IsO,g2S
The light receiving element using Ga5h also has a light receiving wavelength range that is almost the same as the light receiving element using Ga5h. In addition, in the example, it is Cp type GttSb on P type ZnTa substrate.
42 was used to provide an s-type Gush layer, but a p-type Zn
A tortoise-shaped Ga5h layer or an n-type Gao, g layer directly on the Ta substrate.
Of course, one or two layers may be provided. Furthermore, as long as the lattice constant is approximately equal to ZrT-, it goes without saying that G"0.98In(4,(3284) may be used instead of GcB-xrl, sh. Although the present invention is applied to a normal photodiode, it goes without saying that the present invention can also be applied to an avalanche photodiode and the like.
発明の詳細
な説明したよう（：、本発明はＺｎＴ−とＧａ５ｈとの
ヘテロ接合、或はＺｓＴ−とＺｎＴｇとほぼ格子定数の
等しいＧａ１ｎＳｈとのへテロ接合を利用して受光素子
を構成したものであるから、可視光領域を含む広範囲の
波長領域（０，５５μ落〜１．８μ風）での使用が可能
であり、且つ信頼性、素子特性を向上できる利点がある
。As described in detail of the invention (:, the present invention utilizes a heterojunction between ZnT- and Ga5h, or a heterojunction between ZsT-, ZnTg, and Ga1nSh, which has approximately the same lattice constant, to construct a light-receiving element. Therefore, it can be used in a wide wavelength range (0.55 μm to 1.8 μm) including the visible light region, and has the advantage of improving reliability and device characteristics.
また、この素子は応答波長範囲が０．５５μ簾から１．
８μｍと非常Ｉ：広い為、新しい可視領域の受光素子と
して、或は最近目ざましい発展をとげている光通信用の
ＧａＡｚ／ＧａＡＩＡｚ レーザやＩｎＧｔｔＡｔＰ／
ＩｎＰ Ｌ／−ザの光の受光素子への応用が期待される
。Additionally, this element has a response wavelength range from 0.55 μm to 1.5 μm.
8 μm and extremely wide, it can be used as a new photodetector in the visible range, or for GaAz/GaAIAz lasers and InGttAtP/
Application of InP L/-Z to light receiving elements is expected.
ｗ１１図は本発明の実施例の断面図、第２図は第１図（
二示した素子のエネルギーバンド図、第５図は光の波長
と外部量子効率との関係を示す図である。
１はＰ形ＺｎＴａ基板、２はＰ形Ｇａ５ｈ層、３は亀形
Ｇａ５ｈ層、４は路側電極、５はＰ側電極、６は凹部で
ある。Figure w11 is a cross-sectional view of an embodiment of the present invention, and Figure 2 is a cross-sectional view of the embodiment of the present invention.
FIG. 5 is an energy band diagram of the device shown in FIG. 2, and is a diagram showing the relationship between the wavelength of light and the external quantum efficiency. 1 is a P-type ZnTa substrate, 2 is a P-type Ga5h layer, 3 is a tortoise-shaped Ga5h layer, 4 is a roadside electrode, 5 is a P-side electrode, and 6 is a recess.
Claims (1)
１ｌｎＴ−とほぼ格子定数の等しいＰ形Ｇａ１ＳＳ４三
元化舎物半導体層を介して、３形Ｇｕｓｈ層或は１ｎＴ
ａとほぼ格子定数の等しい筒形Ｇａ１％ｓｈ三元化合物
半導体層を設けたことを特徴とする半導体受光素子。A 3-type Gush layer or 1nT is formed directly on the P-type Z%T-substrate, or via a P-type Ga1SS4 ternary semiconductor layer having approximately the same lattice constant as the P-type Gg5h layer or 1lnT-.
1. A semiconductor light-receiving element comprising a cylindrical Ga1%sh ternary compound semiconductor layer having a lattice constant substantially equal to a.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57053280A JPS58170079A (en) | 1982-03-31 | 1982-03-31 | Semiconductor photodetecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57053280A JPS58170079A (en) | 1982-03-31 | 1982-03-31 | Semiconductor photodetecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58170079A true JPS58170079A (en) | 1983-10-06 |
| JPS6328504B2 JPS6328504B2 (en) | 1988-06-08 |
Family
ID=12938321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57053280A Granted JPS58170079A (en) | 1982-03-31 | 1982-03-31 | Semiconductor photodetecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58170079A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02222500A (en) * | 1988-12-22 | 1990-09-05 | Hoechst Ag | Manufacture of readily soluble, granular bleaching activator having long shelf life |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5320881A (en) * | 1976-08-11 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Photo semiconductor device |
| JPS5475995A (en) * | 1977-11-10 | 1979-06-18 | Thomson Csf | Electron avalanche photodiode |
-
1982
- 1982-03-31 JP JP57053280A patent/JPS58170079A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5320881A (en) * | 1976-08-11 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Photo semiconductor device |
| JPS5475995A (en) * | 1977-11-10 | 1979-06-18 | Thomson Csf | Electron avalanche photodiode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02222500A (en) * | 1988-12-22 | 1990-09-05 | Hoechst Ag | Manufacture of readily soluble, granular bleaching activator having long shelf life |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6328504B2 (en) | 1988-06-08 |
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