JPS58169052A - Gas sensitive element - Google Patents
Gas sensitive elementInfo
- Publication number
- JPS58169052A JPS58169052A JP5140182A JP5140182A JPS58169052A JP S58169052 A JPS58169052 A JP S58169052A JP 5140182 A JP5140182 A JP 5140182A JP 5140182 A JP5140182 A JP 5140182A JP S58169052 A JPS58169052 A JP S58169052A
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- Prior art keywords
- gas sensitive
- gas
- lead wire
- sensitive body
- atmosphere
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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- Life Sciences & Earth Sciences (AREA)
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- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
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- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 本発明は感ガス素子に関する。[Detailed description of the invention] [Purpose of the invention] The present invention relates to a gas sensitive element.
従来から被測定ガス雰囲気に接触して抵抗の変化する例
えばＺｎＯ，５ｎＯｓ系の金属酸化物半導体等のガス感
応体を用い丸線ガス素子が研究されている。BACKGROUND ART Conventionally, round wire gas elements have been studied using gas sensitive materials such as ZnO and 5nOs metal oxide semiconductors whose resistance changes when they come into contact with a gas atmosphere to be measured.
この感ガス素子には、ガス感応体がスパッタリング法１
Ｍ着法等で平板状の基板に設けられている構造のものが
ある。In this gas-sensitive element, the gas-sensitive material is formed by sputtering method 1.
Some have a structure in which they are provided on a flat substrate using the M-bonding method or the like.
このガス感応体の電極は、外部へのリード線を取出すた
め、リード線をつけた場所での剥離が生じにくいことが
要求される。このため、金属ペーストの焼付等による金
属厚膜からなる電極を用いるものがある。しかし、金属
ペーストを電極材料として用いると、素子使用中の高温
環境下や前記電極の焼付時に、ガス感応体へ金属ペース
ト成分の拡散等の悪影響があった。よって感ガス素子の
抵抗値の経時変化が大きく、抵抗値の安定に長時間要す
るという問題点があった。またスパッタリング法、蒸着
法による金属薄膜からなる電極を用いる感ガス素子もあ
る。しかし、金属薄膜鉱接着強度が弱く、リード線接続
部において剥離を生じ易いという問題点があった。The electrodes of this gas sensitive material are required to be difficult to peel off at the locations where the lead wires are attached, since the lead wires are taken out to the outside. For this reason, some devices use electrodes made of a thick metal film formed by baking a metal paste or the like. However, when a metal paste is used as an electrode material, there are adverse effects such as diffusion of metal paste components into the gas sensitive body under a high temperature environment during use of the device or when the electrode is baked. Therefore, there is a problem in that the resistance value of the gas-sensitive element changes significantly over time, and it takes a long time for the resistance value to stabilize. There are also gas-sensitive elements that use electrodes made of thin metal films produced by sputtering or vapor deposition. However, there was a problem in that the adhesive strength of the metal thin film was weak and peeling easily occurred at the lead wire connection portion.
さらに、電極に金属ペースト等の熱処理が必要な材料を
用いると、ガス感応体に悪影響を与えないように、電極
とガス感応体との位置関係で電極材料の熱処理温度に制
限がでてくる。スパッタリフグ法等により設けられたガ
ス感応体はアニールする必要があるが、例えば電極がガ
ス感応体の表面に設けられていると、ガス感応体のアニ
ール温度以下の焼付温度の金属ペーストしか用いること
ができなかった。Furthermore, if a material that requires heat treatment, such as a metal paste, is used for the electrode, the heat treatment temperature of the electrode material will be limited depending on the positional relationship between the electrode and the gas sensitive body so as not to adversely affect the gas sensitive body. Gas sensitive bodies provided by the sputtering method etc. need to be annealed, but if, for example, an electrode is provided on the surface of the gas sensitive body, only a metal paste with a baking temperature below the annealing temperature of the gas sensitive body can be used. could not.
また、従来は感度を向上させる為に、ガス感応体中に触
媒を混入していたが、実質的に触媒として作用するのは
混入した触媒のうち、ガス感応体の被測定雰囲気側の表
面に存在するわずかな量である−８またこの表面に存在
する触媒も使用中にガス感応体のなかへ拡散してしまい
効果が減少してしまい、またガス感応体くも悪影響を及
ぼす等の欠点があった。In addition, in the past, a catalyst was mixed into the gas sensitive body in order to improve sensitivity, but it is only the surface of the gas sensitive body facing the measured atmosphere that actually acts as a catalyst. The catalyst present on the surface of the catalyst also diffuses into the gas sensitive material during use, reducing its effectiveness, and also has the disadvantage of adversely affecting the gas sensitive material. Ta.
本発明は、以上の点を考慮してなされたもので電極のリ
ード線接続部における剥離を防止し、素子の抵抗値が短
時間で安定しかつ経時変化の少ない感ガス素子紮提供す
ることを目的とするＯＬ発明の概費〕
本発明においてガス感応体の電極は、リード線の接続さ
れるリード線接続部と、ガス感応体とリード線接続部と
を接続する信号取出し部からなる。The present invention has been made in consideration of the above points, and an object of the present invention is to provide a gas-sensitive element that prevents peeling at the lead wire connection portion of the electrode, stabilizes the resistance value of the element in a short time, and shows little change over time. Outline of Targeted OL Invention] In the present invention, the electrode of the gas sensitive body consists of a lead wire connection portion to which a lead wire is connected, and a signal extraction portion that connects the gas sensitive body and the lead wire connection portion.
このリード線接続部としては、基板との接着強度の大き
い材料を用いる。例えば、厚膜印刷法等で金属ペースト
を焼付により基板に固定したものや。For this lead wire connection portion, a material with high adhesive strength to the substrate is used. For example, a metal paste is fixed to a substrate by baking using a thick film printing method.
Ｍ２Ｏ３基板等との接着力にすぐれたＣｒ層の上にＡｕ
層を設けた構造のもの等を用いることもできる。Au is placed on top of the Cr layer, which has excellent adhesion to M2O3 substrates, etc.
A structure having layers can also be used.
信号取出し部には、蒸着法及びスパッタリング法により
得られる金属薄膜を用いる。A metal thin film obtained by vapor deposition and sputtering is used for the signal extraction section.
このリード線接続部は、ガス感応体と接触しないように
基板に設けられる。また、信号取出し部は、ガス感応体
の被測定雰囲気と接触する側の表面に接触するように設
けられる。さらに触媒層はガス感応体の被測定雰囲気と
接触する側の貴重を覆うごた設けられる。この触媒層は
電気的に絶縁体であり、かつ被測定雰囲気を通すため、
多孔質であることが必要である。This lead wire connection portion is provided on the substrate so as not to come into contact with the gas sensitive body. Further, the signal extraction section is provided so as to be in contact with the surface of the gas sensitive body on the side that comes into contact with the atmosphere to be measured. Furthermore, the catalyst layer is provided to cover the precious part of the gas sensitive body on the side that comes into contact with the atmosphere to be measured. This catalyst layer is an electrical insulator and allows the atmosphere to be measured to pass through.
It needs to be porous.
（発明の実施例′）１ 本発明の実施例を以下説明する。(Embodiment of the invention') 1 Examples of the present invention will be described below.
実施例 １゜
ｔ４１図は本発明素子の断面図であるｏ ＡｊｘＯｓか
らなる基板（１）に、ＺｎＯを主成分とし、Ｇａｇｅｓ
をＱ、１ｍｏ１％加えたＺｎＯ系のガス感応体＜２）’
ｖスパッタリング法で設けられているｏリード線接続部
（３）はＡｕペーストの焼付により設けられている。さ
らにガス感応体（２）の被測定雰囲気に接触する側の表
面とリード線接続部（３）とを接続するように、蒸着法
によるＡｕ薄膜により信号取出し部（４）が設けられて
いる。！たり一ド線接続部（３）ＫはＡｕからなるリー
ド線（７）が熱圧着法で接続されている。さらにこのガ
ス感応体（２）の被測定雰囲気に接触する側の表−を覆
うように、 Ａｊ冨０１に対しＱ、５ ｗｔ−のＰｔを
含む触媒層（５）が厚膜印刷法によりＢけられている。Example 1 ゜T41 is a cross-sectional view of the device of the present invention.
Q, ZnO-based gas sensitive material with 1 mo1% added<2)'
The o-lead connection portion (3) provided by the v-sputtering method is provided by baking Au paste. Furthermore, a signal extraction section (4) is provided by a thin Au film formed by vapor deposition so as to connect the surface of the gas sensitive body (2) on the side that comes into contact with the atmosphere to be measured and the lead wire connection section (3). ! A lead wire (7) made of Au is connected to the lead wire connection portion (3) K by thermocompression bonding. Furthermore, a catalyst layer (5) containing Pt of Q, 5 wt- for Aj 01 was coated with B by a thick film printing method so as to cover the surface of the gas sensitive body (2) on the side that comes into contact with the atmosphere to be measured. I'm being kicked.
ま九基板（１）の裏面にはガス感応体（２）の加熱用に
ヒータ（６）が設けられている。A heater (6) is provided on the back surface of the substrate (1) for heating the gas sensitive body (2).
実施例 ２゜
実施例１．と同じ構成で、スパッタリング法によりＡｊ
ｘＯｎに対し約１ｗ１−のＰｔを含む触媒層が設けられ
ている。Example 2゜Example 1. With the same configuration, Aj
A catalyst layer containing about 1 w1 - of Pt per xOn is provided.
実施例 ３゜
実施例１と同じ構成で、アルミニウムオクタエイトにＰ
ｔ＠＠化合物を混合したものを塗布し、乾燥後３５０’
０〜５５０℃で焼成した触媒層が設けられている。Example 3゜Same configuration as Example 1, P on aluminum octaeight
Apply a mixture of t@@compounds and dry for 350'
A catalyst layer fired at 0 to 550°C is provided.
比較例 ｌ。Comparative example l.
ガス感応体として、主成分ＺｎＯに０．１ｍｏ１％の（
］ａｚＯａを加えさらに触媒として０．５ｗｔ−のＰＩ
を含んだものを用いた。構成は第１図の構成から触媒層
（５）を除いた以外は同じ構成とした。As a gas sensitive material, 0.1 mo1% (
] azOa was added and further 0.5wt-PI was added as a catalyst.
The one containing the following was used. The structure was the same as that shown in FIG. 1 except that the catalyst layer (5) was removed.
実施例１１、実施例２１、実施例３．及び比較例１．の
素子温度約３５０℃における素子の抵抗値Ｒの経時変化
を第２図に示す。同図中曲線為はｉ −Ｃ−Ｈｌ。Example 11, Example 21, Example 3. and Comparative Example 1. Figure 2 shows the change over time in the resistance value R of the element at an element temperature of about 350°C. The curve in the figure is i-C-Hl.
３０００ｐｐｍ中における実施例１．０抵抗値の変化を
示し、曲線ａ′は大気中における抵抗値の変化を示す。The curve a' shows the change in resistance value of Example 1.0 in 3000 ppm, and the curve a' shows the change in resistance value in the atmosphere.
同様に曲線す１曲線Ｃ１曲線ｄはそれぞれ実施例２０、
実施例３１、比較例１の＋ −Ｃ４Ｈ♂ζＰｐｎｎ中に
おける抵抗値の変化を示し、曲線ｂ′、曲線Ｃ′、曲線
ｄ′はそれぞれ実施例Ｚ、実施例３１、比較例１．の大
気中における抵抗値の変化を示す。Similarly, curve 1 curve C1 curve d is Example 20,
The changes in resistance values in + -C4H♂ζPpnn of Example 31 and Comparative Example 1 are shown, and curves b', C', and d' are for Example Z, Example 31, and Comparative Example 1, respectively. shows the change in resistance value in the atmosphere.
この結果ａＩ２図から明らかなように、実施例１゜〜３
．が１万時間を越えてなお安定に作動しているのに比べ
、比較例１．においては５０００時間を越えるζろから
大気中の抵抗が下降し、素子の感度が患くなることがわ
かる。本発明によれば痔命の長い感ガス素子を得ること
ができることがわかる。As is clear from the results shown in Figure aI2, Examples 1 to 3
．． Comparative example 1. still operates stably after more than 10,000 hours. It can be seen that the resistance in the atmosphere decreases after more than 5,000 hours, and the sensitivity of the element deteriorates. It can be seen that according to the present invention, a gas-sensitive element with a long hemorrhoid life can be obtained.
これは、本発明において触媒層をガス感応体の表面に設
けたため、ガス感応体に触媒を混入した場合〈比べ有効
に作用する触媒の量が増え、ガス感応体中への拡散によ
る触媒の効果の減少またガス感応体への悪影響等がなく
なったためと考えられる。This is due to the fact that in the present invention, the catalyst layer is provided on the surface of the gas sensitive material, so when the catalyst is mixed into the gas sensitive material, the amount of catalyst that acts effectively increases compared to when the catalyst is mixed into the gas sensitive material. This is thought to be due to the decrease in the amount of gas and the elimination of any adverse effects on the gas sensitive body.
また、この触媒層を設けることにより、ガス感応体表面
の保−属をも兼ねることとなる。さらに信号取出し部と
ガス感応体との接触部をも保護することになる。本発明
においては金属薄膜からなる信号取出し部がガス感応体
表面に設けられている。この金属薄膜は外力に弱く、ひ
っか龜傷等で接触不要を起こすこと等が考えられるが、
この触媒層を設けたことにより防止できる。ガス感応体
表面を覆っているため、大気中のほこり、水蒸気姉の悪
影響を防止することもできることになる〇実施例１〜３
．のどとく、ガス感応体（２）の電極のリード線接続部
（３）をＡｕペーストの焼付により設けたのでリード線
（７）を接続したと無の剥離が生じにくくなる。例えば
３μ属φのＡｕリード線を熱圧着法で接続した場合、こ
の実施例１．〜３．においては引張り強賓１０ｇ以Ｆが
得られるのに比べ、Ａｕｓ着膜を用いた場合は１ｇ以下
である。このように大幅に引張り強度が向丘される。Moreover, by providing this catalyst layer, it also serves as a retainer for the surface of the gas sensitive body. Furthermore, the contact portion between the signal extraction portion and the gas sensitive body is also protected. In the present invention, a signal extraction section made of a metal thin film is provided on the surface of the gas sensitive body. This thin metal film is vulnerable to external forces, and it is possible that contact may become unnecessary due to scratches, scratches, etc.
This can be prevented by providing this catalyst layer. Since it covers the surface of the gas sensitive body, it is also possible to prevent the negative effects of dust and water vapor in the atmosphere. Examples 1 to 3
．． Since the lead wire connection portion (3) of the electrode of the gas sensitive body (2) is provided by baking Au paste, it is difficult for the lead wire (7) to peel off when connected. For example, when Au lead wires of 3μ metal diameter are connected by thermocompression bonding, this Example 1. ~3. Compared to the case where a tensile strength of 10 g or more F is obtained in the case of using an Au film, the tensile strength is 1 g or less when an Au film is used. In this way, the tensile strength is significantly increased.
次に電極の構造の違いによる素子の抵抗値を比較する。Next, we will compare the resistance values of elements with different electrode structures.
比較例 ２゜
前記実施例１．と信号取出し部を除いて閤じ構成で、信
号取出し部がＡｕペーストの焼付により設けられている
。Comparative Example 2゜Example 1. Except for the signal extraction section, the signal extraction section is provided by baking Au paste.
比較例 ３゜
実施例１と信号取出し部を除いて同じ構成でガス感応体
の下にＡｕ蒸着膜からなる信号順出し部が設けられてい
る。Comparative Example 3 The configuration was the same as in Example 1 except for the signal take-out part, but a signal take-out part made of an Au vapor-deposited film was provided below the gas sensitive body.
第３図にガス感応体の温度を３５０℃としたと自の大気
中での素子の抵抗値Ｒの経時変化と、１−Ｃ４Ｈ１０３
０００ＰＰｍ中での抵抗値凡の経時変化を示した。抵抗
値８は大気中のｔ＝０での抵抗値を１００とし、ムーＣ
４Ｈ１ｏガス中のｔ＝Ｏでの抵抗値を１としたときの相
対値である。曲線鳳は実施例１．の盈−Ｃ４Ｈ１０中の
抵抗値を表わし１曲線１′は実施例１゜０大気中の抵抗
値を表すす。同様に曲線すは比較例２の盛−Ｃ４Ｈ１０
中のｍＦｃ値を表わし、曲線ｂ′は比較例２．０大気中
の抵抗値を表わす。Figure 3 shows the change in resistance R of the element in its own atmosphere over time and the change in 1-C4H103 when the temperature of the gas sensitive body is 350°C.
The graph shows the change in resistance value over time in 000 PPm. Resistance value 8 is based on the resistance value at t=0 in the atmosphere as 100, and Mu C
This is a relative value when the resistance value at t=O in 4H1o gas is set to 1. The curved thorn is Example 1. Curve 1' represents the resistance value in Example 1°0 atmosphere. Similarly, the curve of Comparative Example 2 -C4H10
Curve b' represents the resistance value of Comparative Example 2.0 in air.
この結果から明らかな如く本発明の実施例におイテハ、
１００時間程度で大気中（曲＃ａ’）、−−Ｃ４Ｈｔｏ
ガス中（曲線ａ）ともに抵抗値は安定する。As is clear from this result, iteha in the example of the present invention,
In the atmosphere for about 100 hours (song #a'), --C4Hto
The resistance value is stable both in gas (curve a).
これに比べ比較例２．においては３００時間を越えても
抵抗値の増加が続き、しかも時間とともに大気中の抵抗
値（曲線ｂ′）とｉ −Ｃ４Ｈ１０ガス中 抵抗値（Ｉ
ＩＩ！Ｉｂ）の差が小さくなゐ傾向がある。これは、金
ペースト中のガラスフリット勢の存在により熱的に安定
になるまで時間がかかること、ガス感応体への不純物の
拡１ｌｋＩＩｌの原因が考えられる。Comparative example 2. The resistance value continued to increase even after 300 hours, and as time passed, the resistance value in the atmosphere (curve b') and the resistance value in i-C4H10 gas (I
II! There is a tendency for the difference in Ib) to become smaller. This is thought to be due to the fact that it takes time for the gold paste to become thermally stable due to the presence of glass frit particles, and the spread of impurities to the gas sensitive member.
このように本発明によれば、抵抗値の経時変化が少なく
、短時間で抵抗値が安定する感ガス素子を得る１、
次に、実施例１．と比較例３．との応答性を比較する。As described above, according to the present invention, a gas-sensitive element with little change in resistance value over time and whose resistance value is stabilized in a short period of time is obtained.1 Next, Example 1. and comparative example 3. Compare the responsiveness with
ｉ［４図にガス感応体の温度を３５０℃とし、１＝Ｏｍ
ｉｎでｉ −Ｃ４Ｈ１Ｇガスを注入し、電＝３ｍｌｎで
１−Ｃ４Ｈｘｏガスを排気したときの抵抗値８の変化を
示１−だ。抵抗［Ｒは大気中の抵抗値を１００としたと
自の相対１直を表わす。なお第４図中、−線畠は実施例
１．を表わし、曲線すは比較例３．を表わす。i[Figure 4 shows that the temperature of the gas sensitive body is 350°C, and 1=Om
Figure 1- shows the change in resistance value 8 when i -C4H1G gas is injected at in and 1-C4Hxo gas is exhausted at 3mln. Resistance [R represents the relative 1-direction when the resistance value in the atmosphere is set to 100. In FIG. 4, the - line indicates Example 1. The curve represents Comparative Example 3. represents.
第４図から明らかな如く１本発明の実施例（曲１１ａ）
は、ガス注入と同時に応答し、抵抗が安定し、はぼガス
排気と同時に抵抗がガス注入以前の値に復帰する。しか
し、比較例３．（曲線ｂ）においては、ガス注入と同時
に応答はすゐが、抵抗値はゆるやかなカーブを描いて変
化し、安定せず、特にガス排気後の復帰が遅い。これは
被測定雰囲気に接触している側の表面で起こり九現象が
拡散することが一因と考えられ゛る０このように本発明
の実施例の方が応答性が良いことがわかる。As is clear from FIG. 4, an embodiment of the present invention (song 11a)
responds at the same time as gas injection, the resistance becomes stable, and as soon as the gas is exhausted, the resistance returns to the value before the gas injection. However, Comparative Example 3. In (curve b), the response is quick at the same time as gas is injected, but the resistance value changes in a gentle curve and is not stable, and in particular, the recovery after gas exhaust is slow. One reason for this is thought to be that the phenomenon occurs on the surface that is in contact with the atmosphere to be measured and is diffused. Thus, it can be seen that the embodiment of the present invention has better responsiveness.
また、この実施例においては、ガス感応体（２）を蒸着
法により形成したがスパッタリング法等で形成しても良
い。一般に、蒸着法ヤスバッタリング法でガス感応体を
形成した場合、大気中あるいは０２雰囲気中でアニール
する必要がある。電極に焼付の処理が必要な場合、焼付
温度とアニール温度を比較して温度の商い方の処理を先
に行なう必要がある。したがって、焼付処理が必要な電
極がガス感応体と重なり合う部分があると電極材料に焼
付の温度条件で制限がでてくる。この発明の構成をとる
感ガス素子では、焼付処理を行なうリード線接続部（３
）はガス感応体（２）と重なり合っていないので温度の
高い方の処理を先に行なうことかで自、電極材料に焼付
の温度条件を加える必要がない。Further, in this embodiment, the gas sensitive body (2) was formed by a vapor deposition method, but it may be formed by a sputtering method or the like. Generally, when a gas sensitive body is formed by vapor deposition or Yasbuttering, it is necessary to anneal it in the air or 02 atmosphere. If the electrode requires baking treatment, it is necessary to compare the baking temperature and annealing temperature and perform the temperature conversion process first. Therefore, if there is a portion where the electrode that requires baking treatment overlaps the gas sensitive body, there will be limitations on the temperature conditions for baking the electrode material. In the gas-sensitive element having the configuration of this invention, the lead wire connection portion (3
) do not overlap with the gas sensitive body (2), so by processing the higher temperature one first, there is no need to apply baking temperature conditions to the electrode material.
またガス感応体に不必要な熱履歴を加えることがない。Further, unnecessary heat history is not added to the gas sensitive member.
この実施例においては、ガス感応体（２）として触媒Ｐ
ｔを用いたＺｎＯ系の金属酸化物半導体を用いたが、Ｐ
ｄ、Ｒｈ、Ｉｒ等の触媒を用いてもよい。また、５ｎＯ
ｚ、ＦｅａＯｓ等の金属酸化物半導体を用いてもよい。In this example, a catalyst P is used as the gas sensitive body (2).
A ZnO-based metal oxide semiconductor using t was used, but P
Catalysts such as d, Rh, and Ir may also be used. Also, 5nO
Metal oxide semiconductors such as z, FeaOs, etc. may also be used.
また、こＯ実施例においては、リード線接続部を、Ａｕ
ペーストの焼付けにより形成したが、Ｐｔベース） 、
Ａｇペースト、ＲｕＯ２ペースト等を用いてもよい。In addition, in this embodiment, the lead wire connection portion is made of Au.
Formed by baking paste (Pt-based),
Ag paste, RuO2 paste, etc. may also be used.
またＣｒＪｉ着層を下地としてＡｕ蒸着層を設けた構造
にしてもよい。これは特にアルｉす基板の場合有効であ
る。Alternatively, a structure in which an Au vapor deposition layer is provided with a CrJi deposition layer as a base may be used. This is particularly effective for aluminum substrates.
また信号取出し部にはＡｕ以外に−Ｐｔ、Ｎｉ、Ｐｄ等
の蒸着法、スパッタリング法による金属薄膜を用いても
よい。Further, in addition to Au, a metal thin film of -Pt, Ni, Pd, etc., formed by vapor deposition or sputtering may be used for the signal extraction portion.
以上本発明によれば、電極のリード線接続部における剥
離を防止することができ、被測定オ囲気に対する応答性
が良く、また素子の抵抗値が短時間で安定しかつ経時変
化の少ない感ガス素子を得る。As described above, according to the present invention, it is possible to prevent peeling at the lead wire connection part of the electrode, and the responsiveness to the ambient air to be measured is good, and the resistance value of the element is stable in a short time and has little change over time. Get the element.
第１図は本発明素子を説明するだめの断面図、第２図は
素子抵抗値Ｒの経時変化特性曲線図、第３図は素子抵抗
値Ｒの経時変化特性曲線図、第４図は素子抵抗値Ｈの応
答特性曲線図である。
ｌ・・基板、２・・ガス感応体、
３・・・リード線接続部、４・・・信号取出し部、５・
・・触媒層、 ６・・・ヒータ。
（４−−
第３図
ｔ （ｈ） −一一一ラFIG. 1 is a cross-sectional view for explaining the device of the present invention, FIG. 2 is a characteristic curve of the element resistance R over time, FIG. 3 is a characteristic curve of the element resistance R over time, and FIG. 4 is a diagram of the element resistance R. 3 is a response characteristic curve diagram of resistance value H. FIG. l...Substrate, 2...Gas sensitive body, 3...Lead wire connection part, 4...Signal extraction part, 5...
...Catalyst layer, 6...Heater. (4-- Figure 3t (h) -111 la
Claims (1)
体の電極とを真値してなる感ガス素子において、前記電
極が前記ガス感応体に接触しないように前記基板に設け
られたリード線接続部と。 前記ガス感応体の被測定雰囲気側の表面と前記リードＩ
ｉＩ接続部とを接続するように設けられた金属薄膜から
なる信号取出し部からなり、前記ガス感応体の被測定雰
囲気側の表面には触媒層が設けられていることを特徴と
する感ガス素子。[Scope of Claims] In a gas-sensitive element formed by a gas-sensitive body provided on a substrate and an electrode of the gas-sensitive body, the electrode may be prevented from coming into contact with the gas-sensitive body. and a lead wire connection portion provided on the substrate. The surface of the gas sensitive body on the measurement atmosphere side and the lead I
A gas-sensitive element comprising a signal extraction section made of a metal thin film provided so as to connect with an iI connection section, and a catalyst layer is provided on the surface of the gas-sensitive body on the side of the atmosphere to be measured. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5140182A JPS58169052A (en) | 1982-03-31 | 1982-03-31 | Gas sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5140182A JPS58169052A (en) | 1982-03-31 | 1982-03-31 | Gas sensitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58169052A true JPS58169052A (en) | 1983-10-05 |
Family
ID=12885916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5140182A Pending JPS58169052A (en) | 1982-03-31 | 1982-03-31 | Gas sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58169052A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0478551U (en) * | 1990-11-19 | 1992-07-08 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5396891A (en) * | 1977-01-31 | 1978-08-24 | Panametrics | Absolute humidity sensor and its manufacture |
| JPS557603A (en) * | 1978-06-12 | 1980-01-19 | Matsushita Electric Ind Co Ltd | Manufacture for moisture sensor |
-
1982
- 1982-03-31 JP JP5140182A patent/JPS58169052A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5396891A (en) * | 1977-01-31 | 1978-08-24 | Panametrics | Absolute humidity sensor and its manufacture |
| JPS557603A (en) * | 1978-06-12 | 1980-01-19 | Matsushita Electric Ind Co Ltd | Manufacture for moisture sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0478551U (en) * | 1990-11-19 | 1992-07-08 |
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