JPS58162033A - Formation of semiconductor layer - Google Patents
Formation of semiconductor layerInfo
- Publication number
- JPS58162033A JPS58162033A JP4513082A JP4513082A JPS58162033A JP S58162033 A JPS58162033 A JP S58162033A JP 4513082 A JP4513082 A JP 4513082A JP 4513082 A JP4513082 A JP 4513082A JP S58162033 A JPS58162033 A JP S58162033A
- Authority
- JP
- Japan
- Prior art keywords
- growth
- semiconductor layer
- semiconductor
- cover
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 131
- 230000015572 biosynthetic process Effects 0.000 title claims description 3
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000001947 vapour-phase growth Methods 0.000 claims description 13
- 239000012808 vapor phase Substances 0.000 claims description 5
- 238000005247 gettering Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体基板上に、互に異なる複数の半導体層
を気相成長法゛によって順次積層して形成する半導体層
形成法の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improved method of forming a semiconductor layer in which a plurality of different semiconductor layers are sequentially stacked on a semiconductor substrate by a vapor phase growth method.
断種半導体層形成法として１．従来、２つの第１及び第
２の成長用領域を形成せる成長用管を用い、然して第１
の成長用領域内を第１の成長用ガス雰囲気とし、次にそ
の第１の成長用領域内に、半導体基板を配して、その半
導体基板上に第１の半導体層を気相成長せしめる第１の
気相成長をなさしめ、その第１の気相成長をなしている
間、第２の成長用領域を第１の成長用ガス雰囲気とは中
なる第２の成長用ガス雰囲気とし、然して、上記第１の
気相成長後、上記半導体基板を上記第２の成長用領域内
に移して、その半導体基板上に形成せる第１の半導体層
上にその第１の半導体層とは異なる第２の半導体層を気
相成長せしめる第２の気相成長をなさしめることを少く
ともなすという方法が提案されている。As a method for forming a semiconductor layer: 1. Conventionally, growth tubes are used that form two first and second growth regions, and the first
A first growth gas atmosphere is provided in the growth region, a semiconductor substrate is placed in the first growth region, and a first semiconductor layer is vapor-phase grown on the semiconductor substrate. During the first vapor phase growth, the second growth region is kept in a second growth gas atmosphere that is different from the first growth gas atmosphere, and After the first vapor phase growth, the semiconductor substrate is moved into the second growth region, and a first semiconductor layer different from the first semiconductor layer is formed on the first semiconductor layer to be formed on the semiconductor substrate. A method has been proposed in which at least the second semiconductor layer is grown in a second vapor phase.
所で、断る従来の半導体層形成法（これを従来の第１の
半導体層形成法と称する）の場合、成長用管内に形成せ
る第１の成長用領域に於て半導体基板Ｆの第１の半導体
層を形成し、第２の成長用領域に於て第２の半導体層を
形成する様にしているので、第１及び第２の半導体層を
所期の特性を右するものとして形成することが出来ると
い゛う特徴を有するものである。By the way, in the case of the conventional semiconductor layer forming method (this will be referred to as the conventional first semiconductor layer forming method), the first growth region of the semiconductor substrate F is formed in the first growth region formed in the growth tube. Since the semiconductor layer is formed and the second semiconductor layer is formed in the second growth region, the first and second semiconductor layers can be formed to have desired characteristics. It has the characteristic of being able to
然しながら、上述せる従来の第１の半導体層形成法の場
合、成長用管に、その内に形成せる２つの成長用領域に
、格別に、成長用ガスを導入せしめる手段を設けるを要
し、従つ大２型化ける、且つ高価な成長用管を用いてな
ければ、第１及び第２の半導体層を形成することが出来
ない等の欠点を有していた。However, in the case of the above-mentioned conventional first semiconductor layer forming method, it is necessary to provide the growth tube with a special means for introducing the growth gas into the two growth regions formed therein. This method has drawbacks such as the fact that the first and second semiconductor layers cannot be formed without using an expensive growth tube that can be made into two types.
又、従来、成長用管内を、その成長用管内に半導体基板
を配した状態で、第１の成長用ガス雰囲気として、上記
半導体基板上に第１の半導体層を気相成長せしめる第１
の気相成長をなさしめ、次で、上記成長用管内が上記第
１の成長用ガス雰囲気である状態で、上記第１の半導体
層をカバ一体にて覆って上記第１の気相成長を終了せし
め、次に、上記第１の半導体層が上記カバ一体にて覆わ
れている状態で、上記成長用管内を、上記第１の成長用
ガス雰囲気より、その第１の成長用ガス雰囲気とは異な
る第２の成長用ガス雰囲気に切替え、次に、上記カバ一
体を、それにて上記第１の半導体層が覆われていへい状
態にして、上記第１の半導体層上に、上記第１の半導体
層とは異なる第２の半導体層を気相成長せしめる第２の
気相成長をなさしめることを少くともなす、という半導
体層形成法が提案されている。Conventionally, a first growth gas atmosphere is used to grow a first semiconductor layer on the semiconductor substrate in a vapor phase in a growth tube with a semiconductor substrate placed inside the growth tube.
Then, while the growth tube is in the first growth gas atmosphere, the first semiconductor layer is integrally covered with a cover and the first vapor phase growth is performed. Then, with the first semiconductor layer covered integrally with the cover, the inside of the growth tube is changed from the first growth gas atmosphere to the first growth gas atmosphere. is switched to a different second growth gas atmosphere, and then the cover is left in a state where the first semiconductor layer is covered with it, and the first semiconductor layer is placed on the first semiconductor layer. A semiconductor layer forming method has been proposed that at least performs second vapor phase growth in which a second semiconductor layer different from the semiconductor layer is grown in vapor phase.
所で、断る半導体層形成法（これを従来の第２の半導体
層形成法と称する）の場合、成長用管に成長用ガスを導
入せしめる手段を１つ設ければ良いので、従来の第１の
半導体層形成法の場合の如くに、成長用管に、その内に
形成せる２つの成長用領域に格別に成長用ガスを導入せ
しめる手段を設ける必要がなく、従って大型化せる、且
つ高価な成長用装置を用いることなしに、第１及び第２
の半導体層を形成し得るという特徴を有するものである
。By the way, in the case of the semiconductor layer forming method that is rejected (this is referred to as the conventional second semiconductor layer forming method), it is sufficient to provide one means for introducing the growth gas into the growth tube, so it is not necessary to use the conventional first method. As in the case of the semiconductor layer forming method described above, there is no need to provide the growth tube with a special means for introducing growth gas into the two growth regions formed within the growth tube. The first and second
It has the feature that it can form a semiconductor layer of 1.
然しながら、上コホせる従来の第２の半導体層形成法の
場合、第１の半導体層。が所期の特性を有するものとし
て形成されていす、又、この為、第１及び第２の半導体
層間の接合が、所期の特性を有するものとして得られな
いものであった。However, in the case of the conventional second semiconductor layer formation method in which the first semiconductor layer is etched on top of the first semiconductor layer. However, because of this, the junction between the first and second semiconductor layers could not be obtained as having the desired characteristics.
眉
この為、本発明Ｉは種々の実験をなし結果上述ぜる従来
の第２の半導体層形成法の場合に於て、上述せる゛如く
に第１の半導体層が所期の特性を有するものとして形成
されていず、又、この為、第１及び第２の半導体層間の
接合が、所期の特性を有するものとして得られていない
理由が、次の通りであることを確認するに到った。For this reason, the present invention I conducted various experiments and found that in the case of the conventional second semiconductor layer forming method described above, the first semiconductor layer has the desired characteristics as described above. It has been confirmed that the reason why the bond between the first and second semiconductor layers has not been obtained as having the desired characteristics is as follows. Ta.
即ち、上述せる従来の第２の半導体層形成法の場合、そ
れに用いるカバ一体が、カーボン又は石英でなるカバ一
体であること、その為カバ一体が、成長用管内を第１の
成長用ガス雰囲気より、第２の成長用ガス雰囲気に切替
える間に於ける雰皿気ガスを、ゲッタリングする能力が
ないこと、更に、それ等のため、上述せる成長用ガス雰
囲気の切替えの間に於番）る雰囲気ガスが、第１の半導
体層に、それとカバ一体との間の僅かな間隙を介して触
れることの理由で、゛上述せる如くに第１の半導体層が
所期の特性を有するものとして形成されていず、又、こ
の為、第１及び第２の半導体層間の接合が、所期の特性
を有するものとして得られていないということを確認す
るに到った。That is, in the case of the conventional second semiconductor layer forming method described above, the cover used therein is made of carbon or quartz, and therefore the cover keeps the inside of the growth tube in the first growth gas atmosphere. Therefore, there is no ability to getter the atmospheric gas during switching to the second growth gas atmosphere, and furthermore, due to these reasons, the temperature during the switching of the growth gas atmosphere described above) Because the atmospheric gas touches the first semiconductor layer through a small gap between it and the cover, it is assumed that the first semiconductor layer has the desired characteristics as described above. It has been confirmed that the bond between the first and second semiconductor layers cannot be obtained as having the desired characteristics.
更に、叙上に鑑み、本発明者熱は、カバ一体に、成長用
管内を第１の成長用ガス雰囲気より、第２の成長用ガス
雰囲気に切替える間に於ける雰囲気ガスを、ゲッタリン
グする能力があれば、仮え第１の半導体層とカバ一体と
の間に僅かな間隙を有していても、上述せる成長用ガス
雲間〆
気の切替えの間に於ける雰囲気ガスが、第１の半導体層
に触れることがな実質的になくなること、そしてカバ一
体に上述せるゲッタリングする能力を有せしめる為には
１、カバ一体が、半導体基板乃至第１の半導体層と同じ
種類の半導体であれば十分であることを想起するに到っ
たものである。Furthermore, in view of the above, the inventor of the present invention provides a method for gettering the atmospheric gas while switching the inside of the growth tube from the first growth gas atmosphere to the second growth gas atmosphere, integrally with the cover. If there is a capability, even if there is a slight gap between the first semiconductor layer and the cover, the atmospheric gas during the above-mentioned switching of the growth gas cloud will In order to substantially eliminate contact with the semiconductor layer of the semiconductor substrate and to provide the cover with the above-mentioned gettering ability, 1. The cover should be made of the same type of semiconductor as the semiconductor substrate or the first semiconductor layer. I have come to remember that it is enough.
依って、本発明者岸２、特許請求の範囲所載の発明を、
本発明として提案するに到ったものである。Therefore, the present inventor Kishi 2, the invention recited in the claims,
This has been proposed as the present invention.
以上にて、本発明（よる半導体層形成法が明らかとなっ
たが、斯る本発明による半導体層形成法によれば、詳細
説明はこれを省略するも、カバ一体とＬ７て、半導体基
板乃至第１の半導体層と同種の半導体でなるカバ一体を
用いているので、前述せる従来の第１及び第２の半導体
層形成法の場合と一様の特徴を有し乍ら、前述せる便乗
の第１の半導体層形成法の場合の如き欠点を有しないと
いう大なるｌ＃徽を有するものである。As described above, the semiconductor layer forming method according to the present invention (according to the present invention) has been clarified.According to the semiconductor layer forming method according to the present invention, although a detailed explanation is omitted, the cover and L7 can be used to form a semiconductor substrate or Since an integral cover made of the same type of semiconductor as the first semiconductor layer is used, it has the same characteristics as the conventional first and second semiconductor layer forming methods described above, but it does not take advantage of the above-mentioned piggybacking. This method has the great advantage of not having the drawbacks of the first semiconductor layer forming method.
次に、本尭ｒＩＡによる半導体層形成法の実施例を述べ
るに、成長用ガス導入口１及びガス排出口２を有する成
長用管３内に、半導体基板４を、例えばカーボンでなる
基板配置用台５上に載置して配した。この場合、半導体
基板４を、基板配置用台５に、その上面より予め形成せ
る基板配置用凹所６内に配した。Next, to describe an embodiment of the method for forming a semiconductor layer using Honyo rIA, a semiconductor substrate 4 is placed in a growth tube 3 having a growth gas inlet 1 and a gas outlet 2. It was placed on table 5 and arranged. In this case, the semiconductor substrate 4 was placed in a substrate placement recess 6 formed in advance from the upper surface of the substrate placement table 5.
而して、斯く成長用管３内に半導体基板４ｆ配した状態
で、成長用管３内に成長用ガス導入口１より第１の成長
用ガスを導入ぜしめて、成長用管３内をＩｌｌ１の成長
用ガス雰囲気として、牛導体基、［４上にＩｌ１の半導
体層を気相成長せしめる第１の気相成長をなさしめ、次
で、威最用管３内が第１の成長用ガスＩＦ囲気である状
態で、Ｉｌｌの半導体層を、基板配置用台５上に摺動自
在の例えばカーボンでなるスライダ７を用いて、半導体
基板４乃至後述するＩｌ１乃至Ｉｌ２の半導体と５ＪＩ
Ｉの半導体でなるカバ一体８Ｅで積って、第１の気相成
長を終了せしめた。この場合、例えばカーボンでなる押
し杆９を用いてスライダ７をスライドせしめた。With the semiconductor substrate 4f disposed inside the growth tube 3, the first growth gas is introduced into the growth tube 3 from the growth gas inlet 1 to fill the inside of the growth tube 3 with Ill1. As a growth gas atmosphere, a first vapor phase growth is performed to grow a semiconductor layer of Il1 on the conductor substrate [4]. In the IF atmosphere, the semiconductor layer Ill is placed on the substrate placement table 5 using a slider 7 made of carbon, for example, and is placed between the semiconductor substrate 4 and the semiconductors Il1 and Il2 (described later) and 5JI.
The first vapor phase growth was completed by stacking a cover body 8E made of a semiconductor of I. In this case, the slider 7 was slid using a push rod 9 made of carbon, for example.
次に、第１の半導体層がカバ一体８にて櫃われている状
態で、成長用管３内に、その内が第２の成長用ガスとな
るべく、Ｉｌ：、兼用ガス導入口１より、所載のガスを
導入せしめて、成長用管ｓ内を第１の成長用カス方聞気
より、それとは真なるＩｌ２の成長用カス雰囲気に切替
えた。Next, with the first semiconductor layer held together by the cover unit 8, a gas is introduced into the growth tube 3 from the dual-purpose gas inlet 1 so that the second growth gas can be used inside the growth tube 3. By introducing the listed gases, the inside of the growth tube s was switched from the first growth scum atmosphere to the true growth scum atmosphere of I12.
次にスライダ７を、押し杆９を用いてスライドせしめて
、カバ一体８を、それにて第１の半導体層が橿われてい
ない状態にして、＄１の半導体層上に、第１の半導体層
とは異なる第２の半導体層を気相成長せしめる第２の気
相成長をなさしめ、次で、１ｌＩ２の半導体層を上述せ
ると同様に、カバ一体Ｂにて覆って、第２の気相成長を
終了せしめた。Next, the slider 7 is slid using the push rod 9 so that the cover unit 8 is in a state where the first semiconductor layer is not covered, and the first semiconductor layer is placed on the semiconductor layer of $1. A second semiconductor layer, which is different from that of It ended growth.
次に、＄２の半導体層かカバ一体８にて橙われでいる状
態で、成長用管３内に、その内が絽３の成長用ガスとな
るべく所要のガスを導入せしめて、成長用管５内を第３
の成長用ガス冬囲気に切替えた。Next, with the semiconductor layer of $2 covered by the cover unit 8, a necessary gas is introduced into the growth tube 3 so that the inside becomes the growth gas of the cell 3, and the growth tube is opened. Number 3 within 5
Switched to gas winter enclosure for growth.
次にカバ一体８を、それにて第２の半導体層か扱われて
いない状態にして、１ｉ４１の半導体層上に、第５の半
導体層を気相成長せしめる第５の気相成長をなさしめて
、全気相成長１１）了し、斯くて第２図に示す如く、半
導体基板４上に、帛１、第２及び＃！３の半導体層を夫
々符号１１．１２及び１３で示す即く形成した。Next, with the cover unit 8 in a state where only the second semiconductor layer is not treated, a fifth vapor phase growth is performed to grow a fifth semiconductor layer on the semiconductor layer 1i41, The entire vapor phase growth 11) is completed, and thus, as shown in FIG. 2, the first, second and #! 3 semiconductor layers were immediately formed, designated 11, 12 and 13, respectively.
のとし、而して成長用管ｓ内でヒータ１０にて半導体基
板４を加熱せしめ乍ら、その半導体基板４が３００℃よ
り高くなった所で、成長用管５内にＡｓＨｉ ガスを
流し始め、次で牛４体基板１の成長用ガス雰囲気とする
ことにより、第１の半導体層１１を、ノンドープのＧａ
Ａｓ でなる層として形成することが出来た。又、今
述べた成長用管５内の第１の成長用カス雰囲気の状態３
内を第２の成長用ガス雰囲気とすることにより、第２の
半導体層１２を、ＡｊＧａＡｓ 系でなる層として形
成することが出来た。更に、今述べた成長用管３内の第
２の成長用ガス雰囲気の状態で、成長用ｔｓ内にシラン
ガスを尋人せしめ、これにより成長用管３内のＭ、要用
ガス＃囲気とする仁とにより、第３の半導体層１３を８
１ド１−揃０５８−１６２０３３ （４）
−ノされたＡｊＧａＡｓ 系の層として形成すること
が出来た。斯く形成された第１及び第２の半導体層１１
及び１２間の接合、ｆＩＡ２及び２８５の半導体層１２
及び１３の接合は、所期の夷好な特性を有していた。Then, while heating the semiconductor substrate 4 in the growth tube s with the heater 10, when the semiconductor substrate 4 reached a temperature higher than 300° C., AsHi gas was started flowing into the growth tube 5. , Next, by setting the growth gas atmosphere of the four-body substrate 1, the first semiconductor layer 11 is made of non-doped Ga.
It was possible to form a layer made of As. In addition, the state 3 of the first growth scum atmosphere in the growth tube 5 just described
By creating a second growth gas atmosphere inside, the second semiconductor layer 12 could be formed as an AjGaAs-based layer. Furthermore, in the state of the second growth gas atmosphere in the growth tube 3 just described, silane gas is introduced into the growth ts, thereby creating an atmosphere of M in the growth tube 3 and the required gas #. The third semiconductor layer 13 is
(4) It was possible to form the layer as an AjGaAs-based layer. The first and second semiconductor layers 11 thus formed
and 12, the semiconductor layer 12 of fIA2 and 285
and 13 had the desired favorable properties.
尚、上述せるに準じて、半導体基板４に、第３図に示す
如く、第１、第２、第３及び第４の半導体層２１．２２
．２５及び２４を形成し、そしてこの場合牛導体基＃Ｌ
４及びカバ一体８を（ｈＡｓ とし、ｆ／ｓ１、第２
、第３及び第４の半導体層２１．２２．２３及び２４を
、夫々８・ドープのＮ ＃１祷ａＡｓ 系の層、ノン
ドープのＧａｌ？系の層、ｚｈドープのＰ型Ａ／ＧａＡ
ｌ 系の層、ＺｎドープのＰ型ＧａＡａ 系の層とし
た。斯く形成された＃！１及び第２、第２及び第５、第
３及び第４の半導体層間の接合は所期の良好な特性を有
していた。Incidentally, as described above, first, second, third and fourth semiconductor layers 21, 22 are formed on the semiconductor substrate 4 as shown in FIG.
．． 25 and 24, and in this case the cow conductor group #L
4 and the cover 8 as (hAs, f/s1, second
, the third and fourth semiconductor layers 21, 22, 23 and 24 are respectively an 8-doped N #1 aAs-based layer and a non-doped Gal? system layer, zh-doped P-type A/GaA
A Zn-doped P-type GaAa-based layer was used. # thus formed! The junctions between the first and second semiconductor layers, the second and fifth semiconductor layers, and the third and fourth semiconductor layers had the expected good characteristics.
第１図は本発明による半導体層形成法の実施例を示す略
ＩＩｌ！１１である。
第２図及び第３図は本発明による半導体層形成法によっ
て形成された半導体層を示す略Ｉｉ１図である。
図中３は、成長用管、４は半導体基板、５は基板配置用
台、７はスライ／、８はカバ一体、９は押し杆、１０は
ヒータ、１１〜１Ｓは半導体層、２１〜２４は半導体層
を夫々示す。FIG. 1 shows an embodiment of the semiconductor layer forming method according to the present invention. It is 11. FIGS. 2 and 3 are schematic diagrams Ii1 showing a semiconductor layer formed by the semiconductor layer forming method according to the present invention. In the figure, 3 is a growth tube, 4 is a semiconductor substrate, 5 is a substrate placement table, 7 is a slide, 8 is a cover integrated, 9 is a push rod, 10 is a heater, 11 to 1S are semiconductor layers, 21 to 24 indicate semiconductor layers, respectively.
Claims (1)
態で、第１の成長用ガス雰囲気として、上記半導体基板
上に第１の半導体層を気相成長せしめる第１の気相成長
をなさしめ、次で、成長用管内が上記第１の成長用ガス
雰囲気である状態で、上記第１の半導体層をカバ一体に
て覆って上記第１の気相成長を終了せしめ、次に、上記
第１の半導体層が上記カバ一体にて覆われている状態で
、上記成長用管内を、上記第１の成長用ガス雰囲気より
、当該筒１の成長用ガス雰囲気とは異なる第２の成長用
ガス雰囲気に切替え、次に、上記カバ一体を、それにて
上記第１の半導体層が覆われていない状態にして、上記
第１の半導体層上に、上記第１の半導体層とは異なる第
２の半導体−を気相成長せしめる第２の気相成長をなさ
しめることを少くともなす半導体層形成法に於て、上記
カバ一体として、１記半導体基板乃至上記第１４の半導
体層と同種の半導体でなるカバ一体を用いることを特徴
とする！Ｆ１体層形成法。A first vapor phase growth is performed in which a first semiconductor layer is grown in a vapor phase on the semiconductor substrate by using a growth tube as a first growth gas atmosphere with a semiconductor substrate placed inside the growth tube. Then, while the inside of the growth tube is in the first growth gas atmosphere, the first semiconductor layer is integrally covered with a cover to complete the first vapor phase growth, and then the first vapor phase growth is completed. With the first semiconductor layer covered integrally with the cover, the inside of the growth tube is changed from the first growth gas atmosphere to a second growth gas atmosphere different from the growth gas atmosphere of the tube 1. The atmosphere is changed to a gas atmosphere, and then the first semiconductor layer is not covered with the cover, and a second semiconductor layer different from the first semiconductor layer is placed on the first semiconductor layer. In a method for forming a semiconductor layer, which comprises at least performing a second vapor phase growth process in which a semiconductor of the same type as the first semiconductor substrate or the fourteenth semiconductor layer is formed as an integral part of the cover; It is characterized by the use of a single cover! F1 body layer formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4513082A JPS58162033A (en) | 1982-03-20 | 1982-03-20 | Formation of semiconductor layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4513082A JPS58162033A (en) | 1982-03-20 | 1982-03-20 | Formation of semiconductor layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58162033A true JPS58162033A (en) | 1983-09-26 |
Family
ID=12710683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4513082A Pending JPS58162033A (en) | 1982-03-20 | 1982-03-20 | Formation of semiconductor layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58162033A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4902356A (en) * | 1988-01-21 | 1990-02-20 | Mitsubishi Monsanto Chemical Company | Epitaxial substrate for high-intensity led, and method of manufacturing same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5478083A (en) * | 1977-12-05 | 1979-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Vapour-phase growth and vapour-phase growth unit |
-
1982
- 1982-03-20 JP JP4513082A patent/JPS58162033A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5478083A (en) * | 1977-12-05 | 1979-06-21 | Nippon Telegr & Teleph Corp <Ntt> | Vapour-phase growth and vapour-phase growth unit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4902356A (en) * | 1988-01-21 | 1990-02-20 | Mitsubishi Monsanto Chemical Company | Epitaxial substrate for high-intensity led, and method of manufacturing same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3177100A (en) | Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3 | |
| JPS58130517A (en) | Manufacture of single crystal thin film | |
| US3165811A (en) | Process of epitaxial vapor deposition with subsequent diffusion into the epitaxial layer | |
| US3208888A (en) | Process of producing an electronic semiconductor device | |
| US3316130A (en) | Epitaxial growth of semiconductor devices | |
| US3793712A (en) | Method of forming circuit components within a substrate | |
| US3476617A (en) | Assembly having adjacent regions of different semiconductor material on an insulator substrate and method of manufacture | |
| US3328213A (en) | Method for growing silicon film | |
| JPS6119101B2 (en) | ||
| JPS58162033A (en) | Formation of semiconductor layer | |
| US3184348A (en) | Method for controlling doping in vaporgrown semiconductor bodies | |
| JPS5856322A (en) | Manufacture of semiconductor substrate | |
| JPS59116192A (en) | Crystal growth method by molecular beam | |
| JPH0236060B2 (en) | KAGOBUTSU HANDOTAINOSEICHOHOHO | |
| US3354007A (en) | Method of forming a semiconductor by diffusion by using a crystal masking technique | |
| JPS60193324A (en) | Manufacture of semiconductor substrate | |
| US3563816A (en) | Method for the vapor growth of semiconductors | |
| US3257246A (en) | Methods for manufacturing semiconductor devices | |
| JP2747823B2 (en) | Method for producing gallium arsenide layer and method for producing gallium arsenide / aluminum gallium arsenide laminate | |
| JPS62160718A (en) | Manufacture of semiconductor device by diffusing dopant intosemiconductor substance from oxide of the dopant | |
| JP3112796B2 (en) | Chemical vapor deposition method | |
| JPS63192227A (en) | Epitaxial growth method of compound semiconductor | |
| JP2776109B2 (en) | Method for manufacturing semiconductor device | |
| JPH05291134A (en) | Formingation of epitaxial layer | |
| JP3106526B2 (en) | Compound semiconductor growth method |