JPS58161924A - Manufacture of transparent thin strip of crystalline oriented lanthanum niobate - Google Patents
Manufacture of transparent thin strip of crystalline oriented lanthanum niobateInfo
- Publication number
- JPS58161924A JPS58161924A JP4154482A JP4154482A JPS58161924A JP S58161924 A JPS58161924 A JP S58161924A JP 4154482 A JP4154482 A JP 4154482A JP 4154482 A JP4154482 A JP 4154482A JP S58161924 A JPS58161924 A JP S58161924A
- Authority
- JP
- Japan
- Prior art keywords
- thin strip
- lanthanum niobate
- niobate
- transparent thin
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【発明の詳細な説明】
本発明は透明な結晶配向性Ｌａ Ｎ ｂｓ○９薄帯の製
造法に関するものである。Ｌａ Ｎ ｂ３０．は強誘電
性を示すチタン酸バリウム（ＢａＴｉＯ２）やニオブ酸
カリウム（ＫＮｂＯ３） ト同様のペロブスカイト型構
造をとり、誘電圧電材料や電気光学材料として期待され
ている素材のひとつである。一般にセラミック材料は各
微結晶の集合した焼結体で用いられており、各微結晶の
結晶軸はランダムに配列しているために、その物性は各
結晶軸の平均値を示す。酸化物誘電材料では、結晶配向
化することによって誘電性や圧電性が大きくなったり、
また結晶粒界の減少によって機械的強度が増すことが知
られている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing transparent crystalline oriented LaN bs○9 ribbons. La N b30. It has a perovskite structure similar to that of barium titanate (BaTiO2) and potassium niobate (KNbO3), which exhibit ferroelectric properties, and is one of the materials expected to be used as a dielectric voltage material or an electro-optical material. Ceramic materials are generally used in the form of a sintered body made up of individual microcrystals, and the crystal axes of each microcrystal are arranged randomly, so that its physical properties indicate the average value of each crystal axis. In oxide dielectric materials, dielectricity and piezoelectricity increase due to crystal orientation,
It is also known that mechanical strength increases due to a reduction in grain boundaries.
セラミック材料の結晶配向化技術は工業的な観”点から
も最近の重要な課題となっている。またセラミック材料
の透明化は電気光学効果などの光学的性質の利用を可能
にならしめる。セラミック焼結材料の電磁気的性質に異
方性をもたらす手段として、（Ｉ）磁場中での成形、（
ＩＩ） ）ポタキシャル効果の利用、（１）ホットプレ
スなどによる熱間加工などがあるが、（Ｉ）の方法は材
料が強磁性体やフェリ磁性体である必要があり、（薯）
の方法では出発物質の一部が顕著な形状異方性を持つも
のでなければならない。また（１）の方法は高温で加圧
するので量産に適さない欠点があり、更にセラミック薄
帯を製造することは困難である。またセラミック材料に
光透過性をもたらす１手段として単結晶の育成があるが
、単結晶化できる材料に制限がありまた形状の大きなも
のを得ることは困難で、更に製品コストが高くなる欠点
を持つ。その点本発明は従来の方法とは全く異なってお
り、その材料が示す機能特性を有効的にならしめるため
の結晶配向性ＬａＮｂ３０．の透明薄帯に関する製造法
である。Crystal orientation technology for ceramic materials has recently become an important issue from an industrial perspective.Also, making ceramic materials transparent makes it possible to utilize optical properties such as electro-optic effects.Ceramics As a means of bringing about anisotropy in the electromagnetic properties of sintered materials, (I) forming in a magnetic field, (
II)) Utilization of potaxial effect, (1) Hot processing by hot pressing, etc., but method (I) requires that the material be ferromagnetic or ferrimagnetic;
In this method, some of the starting materials must have significant shape anisotropy. In addition, method (1) involves pressurization at high temperatures, which has the disadvantage of not being suitable for mass production, and furthermore, it is difficult to produce ceramic ribbons. In addition, growing single crystals is one way to bring optical transparency to ceramic materials, but there are limitations on the materials that can be made into single crystals, it is difficult to obtain large shapes, and there are also disadvantages of high product costs. . In this respect, the present invention is completely different from the conventional method, and uses crystal-oriented LaNb30. This is a manufacturing method for a transparent ribbon.
本発明の、透明な結晶配向性ＬａＮｂ３０９薄帯の製造
法はＬａ Ｎ ｂ３ｏ、あるいはそれにシリカや酸化ホ
ウ素などのような融剤を若干量加えたものを白金ノズル
中で完全に溶融し、第１図に示すようなゴムローラーで
挾まれた２枚の金属急冷板でその融体を圧延しつつ超急
冷することによって、透明な結晶配向性ニオブ酸ランタ
ン薄帯を得るものである。The method of manufacturing a transparent crystal-oriented LaNb309 ribbon according to the present invention is to completely melt LaNb3o or a mixture thereof with a small amount of a fluxing agent such as silica or boron oxide in a platinum nozzle, and A transparent crystal-oriented lanthanum niobate ribbon is obtained by ultra-quenching the melt while rolling it between two metal quench plates sandwiched between rubber rollers as shown in the figure.
セラミック融体からの急冷処理は、材料組成などの条件
に依存するが、そのままガラス化するか、あるいは結晶
相を析出したシするかのどちらかである。結晶化する場
合でも配向化したり、また透明化することはまずない。The quenching treatment from a ceramic melt depends on conditions such as material composition, but it either vitrifies it as it is or precipitates a crystalline phase. Even when it crystallizes, it rarely becomes oriented or transparent.
本発明による結晶配向化現象はセラミック融液の超急冷
過程において一方向凝固の条件が満たされたためと考え
られる。The crystal orientation phenomenon according to the present invention is thought to be due to the fact that the conditions for unidirectional solidification are satisfied during the ultra-rapid cooling process of the ceramic melt.
すなわち、融液が金属板に接する表面部分は極端に温度
が低く、そこから薄帯の中心部に向かって急激な温度勾
配が生じ、その結果として薄帯の垂直方向に沿って結晶
が配向化したのであろう。In other words, the temperature at the surface where the melt contacts the metal plate is extremely low, and a sharp temperature gradient occurs from there toward the center of the ribbon, resulting in crystal orientation along the vertical direction of the ribbon. I guess he did.
実施例は以下のとおりである。ＬａＮ１）３０ｉ＋単独
の粉末を白金ノズルに入れ／ ｊ ００ ’Ｃで２０分
間溶融した後、その融体を２枚の金属急冷板の間に噴射
し、圧延しつつ超急冷した。その結果、均一性の良い結
晶配向性ニオブ酸ランタン（Ｌａ Ｎ ｂ：＋ ０９
）の透明薄帯が得られた。配向化したＬａＮ’ｔ）３０
９薄帯とそれを砕いて無配向化したＬａＮｂ３０．粉末
を比較するために、それらのＸ線回折ノ（ターンを第２
図に示す。第２図の（ｂ）はＬａＮｂ３０９薄帯を砕い
た無配向粉末で、ペロプスカイト型構造に特徴的なＸ線
パターンを示している。第２図の（ａ）はＬａ Ｎ ｂ
ｓ Ｏｅ薄帯のＸ線パターンで、（／１０）面及び（２
２０）面が極端に強くあられれており、（ｈｈＯ）面に
配向化していることは明らかである。Examples are as follows. A powder of LaN1)30i+ was put into a platinum nozzle and melted at 00'C for 20 minutes, and then the melt was injected between two metal quench plates and ultra-quenched while being rolled. As a result, crystal-oriented lanthanum niobate (LaNb:+09
) was obtained. Oriented LaN't)30
9 thin strip and LaNb made by crushing it to make it non-oriented30. In order to compare the powders, their X-ray diffraction data (second turn) were
As shown in the figure. FIG. 2(b) shows a non-oriented powder obtained by crushing a LaNb309 ribbon, and shows an X-ray pattern characteristic of a perovskite structure. (a) in Figure 2 is La N b
s Oe ribbon X-ray pattern, (/10) plane and (2
20) The plane is extremely strongly roughened, and it is clear that the plane is oriented in the (hhO) plane.
第１図は本発明を実施した際に用いた超急冷装置の概略
図である。図中の各番号の説明はつぎの通シである。
／・・・白金ノズ／Ｉ／（外径ｇｆｆ、内径乙ｎ、長さ
７００１１１）、２・・・電気炉（炭化ケイ素発熱体）
、３・・・金Ｘ板（ステンレス製）、＆・・・ゴムロー
ラー、Ｓ・・・ワイヤロープ、６・・・巻取機、７・・
・モーター（クラッチ・ブレーキ付）、
第２図はＬａ Ｎ ｂ３０．のＸ線回折パターンである
。
（ａ）・・・配向化した透明薄帯であり、（ｂ）・・・
それを砕いて無配向化した粉末である。FIG. 1 is a schematic diagram of an ultra-quenching apparatus used in carrying out the present invention. The explanation of each number in the figure is as follows. /...Platinum nozzle /I/ (outer diameter gff, inner diameter Otn, length 700111), 2... Electric furnace (silicon carbide heating element)
, 3... Gold X plate (made of stainless steel), &... Rubber roller, S... Wire rope, 6... Winding machine, 7...
・Motor (with clutch and brake), Figure 2 shows LaN b30. This is the X-ray diffraction pattern of (a)...Oriented transparent ribbon, (b)...
This powder is made by crushing it and making it non-oriented.
Claims (1)
それに融剤として若干量の無水ケイ酸（ＳｉＯｚ）など
を加えたものを溶融し、その融体を圧延しつつ超急冷す
ることを特徴とする透明な結晶配向性ニオブ酸ランタン
薄帯の製造法である。A transparent crystal produced by melting lanthanum niobate (LaN ba Os) or adding a small amount of silicic acid anhydride (SiOz) as a flux, and ultra-quenching the melt while rolling it. This is a method for producing oriented lanthanum niobate ribbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4154482A JPS58161924A (en) | 1982-03-16 | 1982-03-16 | Manufacture of transparent thin strip of crystalline oriented lanthanum niobate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4154482A JPS58161924A (en) | 1982-03-16 | 1982-03-16 | Manufacture of transparent thin strip of crystalline oriented lanthanum niobate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58161924A true JPS58161924A (en) | 1983-09-26 |
| JPS6251206B2 JPS6251206B2 (en) | 1987-10-29 |
Family
ID=12611357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4154482A Granted JPS58161924A (en) | 1982-03-16 | 1982-03-16 | Manufacture of transparent thin strip of crystalline oriented lanthanum niobate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58161924A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6396094B1 (en) * | 2000-05-12 | 2002-05-28 | Agilent Technologies, Inc. | Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM |
| US8426077B2 (en) | 2004-12-23 | 2013-04-23 | Universitetet I Oslo | Proton conductors |
| JP2014125656A (en) * | 2012-12-26 | 2014-07-07 | Japan Fine Ceramics Center | Material for thermal barrier coating |
-
1982
- 1982-03-16 JP JP4154482A patent/JPS58161924A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6396094B1 (en) * | 2000-05-12 | 2002-05-28 | Agilent Technologies, Inc. | Oriented rhombohedral composition of PbZr1-xTixO3 thin films for low voltage operation ferroelectric RAM |
| US8426077B2 (en) | 2004-12-23 | 2013-04-23 | Universitetet I Oslo | Proton conductors |
| JP2014125656A (en) * | 2012-12-26 | 2014-07-07 | Japan Fine Ceramics Center | Material for thermal barrier coating |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6251206B2 (en) | 1987-10-29 |
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