JPS58161504A - Voltage control oscillator - Google Patents
Voltage control oscillatorInfo
- Publication number
- JPS58161504A JPS58161504A JP57043948A JP4394882A JPS58161504A JP S58161504 A JPS58161504 A JP S58161504A JP 57043948 A JP57043948 A JP 57043948A JP 4394882 A JP4394882 A JP 4394882A JP S58161504 A JPS58161504 A JP S58161504A
- Authority
- JP
- Japan
- Prior art keywords
- resonator
- thick film
- controlled oscillator
- conductor
- voltage controlled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
- H05K3/246—Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
- H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0014—Structural aspects of oscillators
- H03B2200/002—Structural aspects of oscillators making use of ceramic material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0014—Structural aspects of oscillators
- H03B2200/0022—Structural aspects of oscillators characterised by the substrate, e.g. material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/004—Circuit elements of oscillators including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0086—Functional aspects of oscillators relating to the Q factor or damping of the resonant circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0088—Reduction of noise
- H03B2200/009—Reduction of phase noise
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、ディジタル周波数シンセサイザ等に用いられ
る電圧制御発振器に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a voltage controlled oscillator used in digital frequency synthesizers and the like.
ディジタル周波数シンセサイザは、近年、VHF、UH
F帝の移動無線装置に受信用局部発振器として、あるい
は送信用発振器として用いられるように力ってきている
。 ディジタル周波数シンセサイザはこのような所に使
用される場合、耐震性と高C/N特性が要求される。Digital frequency synthesizers have recently been developed into VHF, UH
Efforts are being made to use it as a receiving local oscillator or as a transmitting oscillator in mobile radio equipment. When a digital frequency synthesizer is used in such a place, earthquake resistance and high C/N characteristics are required.
これは一般に移動無線機は振動、衝撃等を受は易く、ま
た高S/N特性を要求されるからである。 屯し、ディ
ジタル周波数シンセサイザがたシ他の隣接する無線チャ
ンネルに対して妨害を与え、受信機の感度抑圧特性を劣
化させたりすゐ。This is because mobile radios are generally susceptible to vibrations, shocks, etc., and are required to have high S/N characteristics. In turn, the digital frequency synthesizer may interfere with other adjacent radio channels, degrading the desensitization characteristics of the receiver.
従来、移動無線機に使用される電圧制御発振器ではアル
ミナ等のセラミックを使用するととKよって、上記要求
の一つである耐震性の問題を解決している。 すなわち
、基板にはセラミックを用い、この上に導体パターン、
抵抗等を厚膜印刷し、チップコンデンサ、トランジスタ
、バリキャップ等を搭載し、さらに電圧制御発振器の発
振周波数を決定する共振器を厚膜印刷して構成すること
によって震動を吸収するようにしている。 この構成で
は、低価格で耐震性の曳い電圧制御発振器を得ることが
できるが\厚膜導体として使用する導体は銀や鋼に比較
して10倍以上の抵抗をもっている銀−パラジウム等が
使用されているので共振器のQが低くなシ、無線機のC
/N特性を悪化させてしまうという欠点があった。Conventionally, ceramics such as alumina have been used in voltage controlled oscillators used in mobile radios, thereby solving the problem of earthquake resistance, which is one of the above requirements. In other words, a ceramic is used for the substrate, and a conductive pattern is placed on top of this.
It absorbs vibrations by thick-film printing resistors, chip capacitors, transistors, varicaps, etc., and thick-film printing the resonator that determines the oscillation frequency of the voltage-controlled oscillator. . With this configuration, it is possible to obtain an earthquake-resistant towing voltage controlled oscillator at a low cost, but the conductor used as the thick film conductor is silver-palladium, etc., which has a resistance more than 10 times that of silver or steel. Because of this, the Q of the resonator is low, and the C of the radio is low.
This had the disadvantage of deteriorating the /N characteristics.
そこでこれを解決する方法として、抵抗が小さな薄膜(
金等を蒸着して導体としたもの)を使用する構成も考え
られたが、これを採用すると移動無線機は価格の高いも
のとなる。Therefore, as a way to solve this problem, a thin film with low resistance (
A configuration using a conductor made by vapor-depositing gold or the like was also considered, but if this was adopted, the mobile radio would be expensive.
本発明は従来のとのような欠点を除去するためになした
もので、その目的はC/NI¥I性の良い、耐震性に勝
れた電圧制御発振器を提供することにある。The present invention has been made to eliminate the drawbacks of the prior art, and its purpose is to provide a voltage controlled oscillator with good C/NI\I characteristics and excellent earthquake resistance.
前記目的を達成するために本発明による電圧制御発振器
はセラミック基板と、このセラミック基板上に搭載また
は形成される導体パターン、抵抗、チップコンデンサ、
トランジスタ、バリキャップ、発振周波数を決定する共
振器等からおいて〜前記共振器を厚膜印刷によって形成
し九厚膜導体ととの厚膜導体の表面にメッキした金属と
によシ構成し、前記共振器の一端をアースに接続し−か
つ4波長以下のiイクロストリップラインにして構成し
である。In order to achieve the above object, the voltage controlled oscillator according to the present invention includes a ceramic substrate, a conductive pattern mounted or formed on the ceramic substrate, a resistor, a chip capacitor,
From a transistor, a varicap, a resonator that determines the oscillation frequency, etc., the resonator is formed by thick film printing, and is composed of a thick film conductor and a metal plated on the surface of the thick film conductor, One end of the resonator is connected to ground and is configured as an i-micro strip line of four wavelengths or less.
前記構成によれば本発明の目的を完全に達成することが
できる。According to the above configuration, the object of the present invention can be completely achieved.
以下、図面等を参照して本発明をさらに詳しく説明する
。Hereinafter, the present invention will be explained in more detail with reference to the drawings and the like.
fIIc1図祉、本発明に使用される電圧制御発振器の
一例を示す回路図である。FIG. 1 is a circuit diagram showing an example of a voltage controlled oscillator used in the present invention.
第1図にシいて、Llは1/4波長マイクロストリツプ
ラインによる共振器、Dlは発振周波数を変化させるバ
リキャップダイオード、TRは発振用トランジスタを示
すC
第1図において共振器Llは電圧制御発振器のC/Nを
左右し、共振器1aoQが高いとC/Nが良くた)、Q
が低いとC/Nが悪くなる。In Fig. 1, Ll is a resonator formed by a 1/4 wavelength microstrip line, Dl is a varicap diode that changes the oscillation frequency, and TR is an oscillation transistor.C In Fig. 1, the resonator Ll is voltage controlled. It affects the C/N of the oscillator, and the higher the resonator 1aoQ, the better the C/N), Q
If the ratio is low, the C/N will be poor.
第2図唸、本発明による電圧制御発振器の一実施例を示
す側面図と平面図である。FIG. 2 is a side view and a plan view showing one embodiment of a voltage controlled oscillator according to the present invention.
図において、1はセラミック基板であ〕、この−面に電
圧制御発振器の回路部が構成されている。In the figure, 1 is a ceramic substrate], and the circuit section of the voltage controlled oscillator is constructed on the negative side thereof.
本図は共振器L1、バリキャップD1、コンデンサCI
、C4,)ランジスタTR,部分のみを示したものであ
ト他の回路部は省略されている。This diagram shows resonator L1, varicap D1, and capacitor CI.
, C4,) Only the transistor TR is shown, and other circuit parts are omitted.
導体パターン部および共振器L1は厚膜印刷されておシ
、斜線で示すように構成されている。The conductor pattern portion and the resonator L1 are thick-film printed and configured as shown by diagonal lines.
セラミック基板1の底面は全面導体印刷されておシ、ア
ース面となっている。The bottom surface of the ceramic substrate 1 is entirely printed with conductors and serves as a ground surface.
共振器L1は14波長以下のマイクロストリップライン
罠なっており、その一端はセラミック基板1の側面を通
ってアース面と接続されている。The resonator L1 is a microstrip line trap of 14 wavelengths or less, and one end thereof is connected to the ground plane through the side surface of the ceramic substrate 1.
コンデンサC1、C覚、バリキャップダイオード亀、ト
ランジスタTR,はそれぞれ導体パターンの所定の位置
に取付けられる。A capacitor C1, a capacitor C1, a varicap diode, and a transistor TR are each attached to a predetermined position on the conductive pattern.
第3図は、所定の位置に厚膜印刷し1さらにその上に銀
または銅まどの導体がメッキされたセラミック基板の側
面図と平面図である。FIG. 3 is a side view and a plan view of a ceramic substrate having a thick film printed in predetermined locations and then plated with a conductor such as silver or copper.
メッキとしては電気メツキ法を使用し、電解メッキ時に
セラミック基板lのアース間を電極として共振器L1、
導体パターンならびにアース面をメッキしたものである
。The electroplating method is used for plating, and during electrolytic plating, the resonator L1,
The conductor pattern and ground surface are plated.
共振器Ltは1/4波長以下のマイクロス) IJツブ
ラインで、その一端がアース面と接続されているので、
アース間と共振器を同時に、しかも容易にメッキを施こ
すことができるC
以上のメッキによシ、共振器の抵抗を厚膜であシながら
小さくでき、共振器のQをより高くすることかで者る。The resonator Lt is an IJ tube line (with a micrometer of less than 1/4 wavelength), and one end of it is connected to the ground plane, so
By plating C or higher, which can easily plate the ground and the resonator at the same time, it is possible to reduce the resistance of the resonator while using a thick film, and to increase the Q of the resonator. It's out.
第4図は、従来の電圧制御発振器と、共振器部分にメッ
キを施してQの高い共振器を使用した電圧制御発振器と
のC/Nを比較した図である。 第4図において、fo
a発振周波数)Δfは発振周波数からの離調周波数であ
ト1は従来の電圧制御発振器のC/N、joh本発明に
よゐ電圧制御発振器のC/Nを示していゐ0図から明ら
かなように1本発明による電圧制御発振器の方が優れて
いることが理解できる〇以上詳しく説明したように、本
発明によれば共振器を厚膜印刷し、その上にメッキを施
すことによシ共振器のQを高くでき、C/N特性の良い
耐震性のすぐれた電圧制御発振器を得ることができる。FIG. 4 is a diagram comparing the C/N of a conventional voltage controlled oscillator and a voltage controlled oscillator using a resonator with high Q by plating the resonator part. In Figure 4, fo
(a oscillation frequency) Δf is the detuning frequency from the oscillation frequency, and 1 shows the C/N of the conventional voltage controlled oscillator, and 1 shows the C/N of the voltage controlled oscillator according to the present invention. 1. It can be understood that the voltage controlled oscillator according to the present invention is superior. As explained in detail above, according to the present invention, the resonator is printed with a thick film and plated on top. The Q of the resonator can be increased, and a voltage controlled oscillator with good C/N characteristics and excellent earthquake resistance can be obtained.
第1図は本発明に使用される電圧制御発振器の回路図1
第2図は本発明に使用されるセラミック基板、および各
部品の配置を示す図1第3図は本発明に使用されるセラ
ミック基板にメッキを施した部分を示す図、第4図は従
来の電圧制御発振器と本発明による電圧制御発振器との
C/Nを比較したグラフである。
1・・・セラミック基板
2・・・厚膜導体 3・・・メッキ導体C1〜C
6・・・コンデンサ
Dl・・・バリキャッグダイオード
L1・・・共振器
Ll 、Ls−チョークコイル
Pl・・・出力端子 P2・・・電源端子R1〜R
s・・・抵抗 TR−・・トランジスタ特許出願人
日本電気株式金社Figure 1 is a circuit diagram of a voltage controlled oscillator used in the present invention.
Fig. 2 shows the ceramic substrate used in the present invention and the arrangement of each component. Fig. 3 shows the plated part of the ceramic substrate used in the invention, and Fig. 4 shows the conventional It is a graph comparing C/N between a voltage controlled oscillator and a voltage controlled oscillator according to the present invention. 1... Ceramic substrate 2... Thick film conductor 3... Plated conductor C1-C
6... Capacitor Dl... Varicag diode L1... Resonator Ll, Ls-choke coil Pl... Output terminal P2... Power supply terminal R1-R
s...Resistor TR-...Transistor patent applicant NEC Kinsha Co., Ltd.
Claims (1)
形成される導体パターン、抵抗1チツプコンデンサ、ト
ランジスタ、バリキャップ、発振周波数を決定する共振
器等からなる回路部とから構成される電圧制御発振器に
おいて〜前記共振器を、厚膜印刷によって形成した厚膜
導体ととの厚膜導体の表面にメッキした金属とによシ構
威し、前記共振器の一端をアースに接続し、かつ1/4
波長以下のマイクロストリップラインにしたことを特徴
とする電圧m御発振器。In a voltage controlled oscillator comprising a ceramic substrate and a circuit section including a conductor pattern mounted or formed on the ceramic substrate, a resistor-one-chip capacitor, a transistor, a varicap, a resonator for determining the oscillation frequency, etc. A resonator is constructed of a thick film conductor formed by thick film printing and a metal plated on the surface of the thick film conductor, one end of the resonator is connected to ground, and 1/4
A voltage m-controlled oscillator characterized by using a microstrip line of less than the wavelength.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57043948A JPS58161504A (en) | 1982-03-19 | 1982-03-19 | Voltage control oscillator |
AU12579/83A AU1257983A (en) | 1982-03-19 | 1983-03-18 | Voltage controlled oscillator |
GB08307555A GB2118392A (en) | 1982-03-19 | 1983-03-18 | Voltage-controlled oscillator mounted on a thick-film printed substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57043948A JPS58161504A (en) | 1982-03-19 | 1982-03-19 | Voltage control oscillator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58161504A true JPS58161504A (en) | 1983-09-26 |
Family
ID=12677925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57043948A Pending JPS58161504A (en) | 1982-03-19 | 1982-03-19 | Voltage control oscillator |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS58161504A (en) |
AU (1) | AU1257983A (en) |
GB (1) | GB2118392A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2153598B (en) * | 1984-01-26 | 1987-04-08 | British Telecomm | Microwave resonator device |
DE4121027A1 (en) * | 1991-06-26 | 1993-01-07 | Thomson Brandt Gmbh | ARRANGEMENT FOR A VIDEO AND SOUND MODULATOR |
JP3492225B2 (en) | 1999-01-19 | 2004-02-03 | 松下電器産業株式会社 | Transceiver |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5013141A (en) * | 1973-04-18 | 1975-02-12 | ||
JPS575403A (en) * | 1980-06-12 | 1982-01-12 | Mitsubishi Electric Corp | Microwave semiconductor oscillator |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3649937A (en) * | 1970-03-23 | 1972-03-14 | Rca Corp | Electronically tuned ultra high frequency television tuner |
-
1982
- 1982-03-19 JP JP57043948A patent/JPS58161504A/en active Pending
-
1983
- 1983-03-18 AU AU12579/83A patent/AU1257983A/en not_active Abandoned
- 1983-03-18 GB GB08307555A patent/GB2118392A/en not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5013141A (en) * | 1973-04-18 | 1975-02-12 | ||
JPS575403A (en) * | 1980-06-12 | 1982-01-12 | Mitsubishi Electric Corp | Microwave semiconductor oscillator |
Also Published As
Publication number | Publication date |
---|---|
GB8307555D0 (en) | 1983-04-27 |
GB2118392A (en) | 1983-10-26 |
AU1257983A (en) | 1983-09-22 |
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