JPS581551B2 - semiconductor pressure transducer - Google Patents
semiconductor pressure transducerInfo
- Publication number
- JPS581551B2 JPS581551B2 JP15242477A JP15242477A JPS581551B2 JP S581551 B2 JPS581551 B2 JP S581551B2 JP 15242477 A JP15242477 A JP 15242477A JP 15242477 A JP15242477 A JP 15242477A JP S581551 B2 JPS581551 B2 JP S581551B2
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- cover member
- pressure transducer
- semiconductor pressure
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】
本発明は半導体圧力変換器に関するものであり、特に周
囲環境により電気特性の劣化がなく、容易に組みたてら
れ、大量生産にも適した半導体圧力変換器に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor pressure transducer, and more particularly to a semiconductor pressure transducer that does not deteriorate in electrical characteristics due to the surrounding environment, is easily assembled, and is suitable for mass production.
シリコン等半導体単結晶自体をダイヤフラムとして、そ
の一面に拡散法等によりゲージ抵抗を形成する半導体ダ
イアフラム型圧力変換器はよく知られている。Semiconductor diaphragm pressure transducers are well known in which a semiconductor single crystal such as silicon itself is used as a diaphragm and a gauge resistance is formed on one surface thereof by a diffusion method or the like.
第1図は従来のこの種の圧力変換器を示す。FIG. 1 shows a conventional pressure transducer of this type.
シリコンダイアフラム1は片面に複数のゲージ抵抗3を
、またその反対面の中央部に空洞2を持ち、このダイア
フラム周縁部の肉厚部とシリコン台4とを密封接着する
ことにより空洞2を真空に保持している。A silicon diaphragm 1 has a plurality of gauge resistors 3 on one side and a cavity 2 in the center of the opposite side, and the cavity 2 is evacuated by sealingly bonding the thick part of the diaphragm peripheral part to the silicon base 4. keeping.
半導体圧力変換器は、かかるアセンブリを側定圧力導入
孔5を持つセラミック板8、および金属カバー7からな
る圧力容器6中に保持し、金属バイプ9で被測定圧を圧
力容器6中に導入するようにしたものである。The semiconductor pressure transducer holds such an assembly in a pressure vessel 6 consisting of a ceramic plate 8 with a side constant pressure introduction hole 5 and a metal cover 7, and introduces the pressure to be measured into the pressure vessel 6 with a metal pipe 9. This is how it was done.
なお、9Aはリード線9Bは電気導体である。In addition, the lead wire 9B of 9A is an electric conductor.
圧力容器6中の圧力に応じてシリコンダイアフラム1に
変形を生じ、これにともなってゲージ抵抗3の抵抗値が
変化する。The silicon diaphragm 1 is deformed in response to the pressure in the pressure vessel 6, and the resistance value of the gauge resistor 3 changes accordingly.
複数のゲージ抵抗3は普通ブリッジ回路を構成するよう
に接続されており、被側定圧力が電気的出力に変換され
る。A plurality of gauge resistors 3 are usually connected to form a bridge circuit, and the constant pressure on the other side is converted into an electrical output.
この種の圧力変換器の難点は、ゲージ抵抗が測定雰囲気
中にさらされるため、ゲージ抵抗特性が劣化し易いこと
である。A drawback of this type of pressure transducer is that the gauge resistance characteristics are susceptible to deterioration because the gauge resistor is exposed to the measurement atmosphere.
第2図、第3図(特公昭51−31508)はこの難点
を一部改良した従来のこの種圧力変換器を示す。FIGS. 2 and 3 (Japanese Patent Publication No. 51-31508) show a conventional pressure transducer of this type that has partially improved this drawback.
この構造の特色は、シリコンダイアフラム1のゲージ抵
抗3の配置された面側に有底円筒状基体11を接着し、
かつゲージ抵抗3とシリコンダイアフラム端部の電極1
2,12AとをAt配線14,14Aおよびゲージ抵抗
3と同一導電型(p型)のシリコン不純物層13,13
Aよりなるリード部で連結していることにある。The feature of this structure is that a bottomed cylindrical base 11 is adhered to the side of the silicon diaphragm 1 on which the gauge resistor 3 is arranged.
and a gauge resistor 3 and an electrode 1 at the end of the silicon diaphragm.
2, 12A are connected to At wirings 14, 14A and silicon impurity layers 13, 13 of the same conductivity type (p type) as the gauge resistor 3.
The reason is that they are connected by a lead part made of A.
しかしこの構造ではn型シリコンダイアフラム中に形成
されたp型導電層よりなるリードの端部が外部雰囲気中
に露出するため、この露出部のpn接合特性が劣化する
欠点がある。However, in this structure, the ends of the leads made of the p-type conductive layer formed in the n-type silicon diaphragm are exposed to the external atmosphere, so there is a drawback that the pn junction characteristics of this exposed portion deteriorate.
またこのリード端部のt極12,1:lとしてアルミニ
ウムを使用しているため、外部雰囲気が高温多湿になる
と電極の劣化がおこり信頼性が悪くなる。Furthermore, since aluminum is used for the t-pole 12,1:l at the end of the lead, if the external atmosphere becomes hot and humid, the electrodes will deteriorate and reliability will deteriorate.
またこの構造ではシリコンダイアフラム1と有底円筒状
基体11を気密もれをなくし、かつ接着部下のpn接合
特性の劣化を防止するために、両者間を有機材で接着し
ているが、有機接着法では繰り返し圧力印加によりクリ
ープ(圧力一出力特性の経時変化)を生じ、圧力変換器
の起歪特性が劣化する欠点がある。In addition, in this structure, the silicon diaphragm 1 and the bottomed cylindrical base 11 are bonded with an organic material in order to eliminate airtight leakage and to prevent deterioration of the pn junction characteristics under the bond. The disadvantage of this method is that repeated pressure applications cause creep (changes in pressure-output characteristics over time), resulting in deterioration of the strain characteristics of the pressure transducer.
またこの構造ではダイアフラム1上の電極12,12A
と有底円筒状基体11上の電極15,15Aとを金線1
6,16A等により連結しているため、振動などにより
金線が断線したり、有底円筒状基体11に接触して電気
的に短絡するおそれがある。Also, in this structure, the electrodes 12, 12A on the diaphragm 1
and the electrodes 15, 15A on the bottomed cylindrical base 11 with the gold wire 1.
6, 16A, etc., there is a risk that the gold wire may break due to vibration or the like, or come into contact with the bottomed cylindrical base 11 and cause an electrical short circuit.
従って本発明の目的はシリコンダイアフラム中のpn接
合部を外部雰囲気から完全にしゃ断してしまい、外部雰
囲気によるpn接合の絶縁特性劣化を防ぐことにある。Therefore, an object of the present invention is to completely cut off the pn junction in the silicon diaphragm from the external atmosphere, thereby preventing deterioration of the insulation properties of the pn junction due to the external atmosphere.
また本発明の他の目的はゲージ抵抗を配置した面に凹窪
部を持つ部材を接着する構造において両者間の気密が完
全で、かつ接着によるシリコンpn接合特性の劣化がな
く、かつ圧力測定による接着部のクリープなどが発生し
ない圧力変換器を提供することにある。Another object of the present invention is to have a structure in which a member having a concave portion is bonded to a surface on which a gauge resistor is arranged, so that the airtightness between the two is perfect, there is no deterioration of the silicon pn junction characteristics due to bonding, and there is no possibility that pressure measurement can be performed. It is an object of the present invention to provide a pressure transducer in which creep of adhesive parts does not occur.
また本発明の別な目的は作業性が良く、容易に作りかつ
組立てることができ、大量生産にも適した圧力変換器を
提供することにある。Another object of the present invention is to provide a pressure transducer that has good workability, is easy to manufacture and assemble, and is suitable for mass production.
本発明のさらに他の目的は様々な環境で使用できる信頼
性の高い圧力変換器を提供することにある。Yet another object of the present invention is to provide a highly reliable pressure transducer that can be used in a variety of environments.
この発明では、シリコンダイアフラムのゲージ抵抗を配
置した面にカバ一部材を整合させる。In this invention, the cover member is aligned with the surface of the silicon diaphragm on which the gauge resistor is arranged.
この時、シリコンダイアフラムの熱応力を除くために、
カバ一部材はシリコンと類似した熱膨脹係数を持つ硼珪
酸系ガラス、または表面に絶縁膜を形成したシリコンで
作られるのが望ましく、その中央近傍に有底穴を、ダイ
アフラムの電極に対応する位置に貫通孔または切矢部を
有するよう加工されている。At this time, in order to remove the thermal stress of the silicon diaphragm,
The cover member is preferably made of borosilicate glass, which has a thermal expansion coefficient similar to that of silicon, or silicone with an insulating film formed on its surface, and has a bottomed hole near the center at a position corresponding to the electrode of the diaphragm. It is processed to have a through hole or cut arrow part.
シリコンダイアフラムとカバ一部材のクリープをなくす
ためダイアフラムの固定部(肉厚部)にカバ一部材を無
機接着法により取り付ける。In order to eliminate creep between the silicon diaphragm and the cover member, the cover member is attached to the fixed part (thick part) of the diaphragm using an inorganic adhesive method.
接着法としてはガラスをバインダとする方法およびダイ
アフラム、カバ一部材の両方にクロムなどの絶縁物に対
する付着力の強い金属を最下層とする多層金属膜を形成
し、両者を金を主成分とする共晶層で接着する方法など
がある。The bonding method is to use glass as a binder, and to form a multilayer metal film on both the diaphragm and the cover member, with the bottom layer being a metal that has strong adhesion to insulators such as chromium, and both have gold as the main component. There are methods such as adhesion using a eutectic layer.
また接着により受けるダイアフラムの熱応力をさらに小
さくし、かつ接着によるシリコンpn接合特性の劣化を
さらに少さくするためには米国特許第3397278号
に記された陽極結合法によりダイアフラム、カバ一部材
を一体に取付けることが好ましい。In addition, in order to further reduce the thermal stress that the diaphragm receives due to adhesion and to further reduce the deterioration of the silicon p-n junction characteristics due to adhesion, the diaphragm and cover members are integrated by an anodic bonding method described in U.S. Pat. No. 3,397,278. It is preferable to install the
両者を接着後、カバ一部材の貫通孔または切欠部を通し
てダイアフラムの電極部およびカバ一部材の表面の一部
、貫通孔または切矢部の側面にクロム、チタン、モリブ
デン等絶縁物に対する付着力の強い金属を最下層とし、
周囲環境により劣化しない金などの貴金属を最上層とす
る多層金属膜を形成する。After gluing the two together, apply strong adhesion to insulating materials such as chromium, titanium, molybdenum, etc. through the through hole or notch of the cover member to the electrode part of the diaphragm, part of the surface of the cover member, and the side of the through hole or cut arrow part. With metal as the bottom layer,
A multilayer metal film is formed with the top layer being a noble metal such as gold that does not deteriorate due to the surrounding environment.
この時ダイアフラムの電極部だけにはあらかじめシリコ
ンとオーミツクコンタクトし易い金属を付着しておくこ
とは好ましいことである。At this time, it is preferable to attach a metal that easily makes ohmic contact with silicon to only the electrode portion of the diaphragm in advance.
この構造によりn型基板にp型拡散層を形成してなるシ
リコンダイアフラムのpn接合部表面は真空など一定雰
囲気、カバ一部材および場合によっては貴金属によって
覆われろため周囲環境により劣化することがない。With this structure, the pn junction surface of the silicon diaphragm, which is made by forming a p-type diffusion layer on an n-type substrate, is covered with a constant atmosphere such as vacuum, a cover material, and in some cases noble metal, so it will not deteriorate due to the surrounding environment. .
以上が本発明の基本であるが、さらにダイアフラムの機
械的な保護および電気出力の温度特性、直線性を向上さ
せるためにダイアフラム裏面の固定領域に、測定圧力導
入用の貫通孔を有し、かつシリコンと熱膨脹係数の類似
した硼珪酸系ガラス、シリコン又は表面に絶縁物を付着
したシリコン等を無機接着法により取り付けることもで
きる。The above is the basis of the present invention, but in order to further improve the mechanical protection of the diaphragm and the temperature characteristics and linearity of the electrical output, the fixed area on the back of the diaphragm has a through hole for introducing measurement pressure, and Borosilicate glass having a coefficient of thermal expansion similar to that of silicon, silicon, or silicon with an insulating material attached to its surface can also be attached by an inorganic bonding method.
この時好ましくは前記陽極結合法で両者を一体に取り付
けることである。At this time, it is preferable to attach both together by the anodic bonding method.
さらに上記カバ一部材上の貴金属薄膜をセラミックや絶
縁テープ上のメタライズ電極に直接結合したり、低融点
金属をバインダとして結合することによりワイヤによる
配線のない信頼性の高い半導体圧力変換器を作ることが
できる。Furthermore, by directly bonding the noble metal thin film on the cover member to the ceramic or metallized electrode on the insulating tape, or by bonding with a low melting point metal as a binder, a highly reliable semiconductor pressure transducer without wire wiring can be made. I can do it.
第4,5図は本発明の1実施例の断面図および要部平面
図で、以下その製作工程にしたがって本実施例の構成を
説明する。4 and 5 are a sectional view and a plan view of essential parts of one embodiment of the present invention, and the structure of this embodiment will be explained below according to the manufacturing process.
使用されるシリコンダイアフラム21は、1例として面
方位(100)、電気伝導型n型、比抵抗1Ωcmであ
り、そのl主面の中央部に凹窪34を有し、周辺肉厚部
すなわち固定領域22および中央肉薄部すなわち起歪領
域の厚さがそれぞれ200μm、30μmの凹型構造を
なしている。The silicon diaphragm 21 used has, for example, a surface orientation of (100), an electrically conductive type of n-type, and a specific resistance of 1 Ωcm, and has a recess 34 in the center of its main surface, and a peripheral thick part, that is, a fixed part. The region 22 and the central thin portion, that is, the strain-generating region, have a concave structure with thicknesses of 200 μm and 30 μm, respectively.
その大きさはチップが3×3朋、中央肉薄部の径が2.
O mmφである。The size of the chip is 3 x 3 mm, and the diameter of the thin center part is 2 mm.
It is O mmφ.
ダイアフラムの平坦面の肉薄部中、周辺近傍にp型ゲー
ジ抵抗23およびコンタクト部23Aが配置されている
。A p-type gauge resistor 23 and a contact portion 23A are arranged near the periphery in the thin portion of the flat surface of the diaphragm.
35は前記平坦而のpn接合を保護する絶縁膜である。35 is an insulating film that protects the flat pn junction.
各ゲージ抵抗23の端部はp型層よりなるコンタクト部
23Aにより電気的に連結されダイアフラム21の肉厚
部22迄引き出されている。The ends of each gauge resistor 23 are electrically connected by a contact portion 23A made of a p-type layer and extended to the thick portion 22 of the diaphragm 21.
このコンタクト部23Aはゲージ抵抗と同一プロセスで
形成してもよいが、望ましくは接着によるシリコンpn
接合特性の劣化を防ぐため、およびこの部分での電圧降
下を小さ《するため、ゲージ抵抗よりも高濃度に形成さ
れる。This contact portion 23A may be formed in the same process as the gauge resistor, but it is preferably formed by bonding silicon pn
In order to prevent deterioration of the junction characteristics and to reduce the voltage drop in this part, it is formed with a higher concentration than the gauge resistor.
また、シリコンダイアフラム210表面はゲージ抵抗形
成プロセス中に形成された二酸化シリコン等の絶縁膜3
5で覆われている。Furthermore, the surface of the silicon diaphragm 210 is coated with an insulating film 3 such as silicon dioxide formed during the gauge resistor forming process.
Covered by 5.
この絶縁膜35は、ダイアフラム21とカバ一部材25
間の気密保持を容易にするため、n型基板上およびp型
層部分23,23A上でほぼ同じ厚さとなっている。This insulating film 35 is formed between the diaphragm 21 and the cover member 25.
In order to easily maintain airtightness between the layers, the thicknesses are approximately the same on the n-type substrate and on the p-type layer portions 23 and 23A.
そして前記コンタクト部23A上の絶縁膜35の一部を
徐去し、コンタクト用窓を形成しておく。Then, a part of the insulating film 35 on the contact portion 23A is removed to form a contact window.
以上のようなシリコンダイアフラム21の、ゲージ抵抗
を配置した平坦な主面側に、中央部に空洞24を有し、
前記コンタクト部23Aに対応する位置に貫通孔26を
穿設され、かつシリコンと熱膨脹係数の類似したカバ一
部材25を載せる。The silicon diaphragm 21 as described above has a cavity 24 in the center on the flat main surface side where the gauge resistor is arranged,
A through hole 26 is formed at a position corresponding to the contact portion 23A, and a cover member 25 having a coefficient of thermal expansion similar to that of silicon is mounted.
シリコンダイアフラム21の中央肉薄部がカバ一部材2
5の空洞部内に納まり、かつ貫通孔26がコンタクト部
23Aと正しく合致するように整列させた後、空洞24
を真空など一定雰囲気に保持した状態でダイアフラム2
1とカバ一部材25とを、例えば陽極結合法により一体
化する。The center thin part of the silicon diaphragm 21 is a cover member 2
5 and aligned so that the through hole 26 correctly matches the contact portion 23A, then the cavity 24
Diaphragm 2 is held in a constant atmosphere such as a vacuum.
1 and the cover member 25 are integrated by, for example, an anodic bonding method.
陽極結合を作るにはシリコンダイアフラム21とカバ一
部材(例えばガラス)25とを接触させ、両者間に電圧
を加えながら400℃程度に加熱する。To create an anodic bond, the silicon diaphragm 21 and the cover member (for example, glass) 25 are brought into contact and heated to about 400° C. while applying a voltage between them.
こうするとシリコンダイアフラム上の絶縁膜35および
カバ一部材の導電度が高まり、両者間に電流が流れると
ともに静電界を生じ、これによって結合ができる。This increases the conductivity of the insulating film 35 on the silicon diaphragm and the cover member, allowing current to flow between them and creating an electrostatic field, thereby creating a bond.
この時カバ一部材25はシリコンダイアフラム上のpn
接合上にも結合されるため、ナトリウムフリーの材質が
好ましい(ナトリウムが含まれていると、シリコン表面
にいわゆるチャネルを生じ易く、pn接合の特性が劣化
する)。At this time, the cover member 25 is a pn on the silicon diaphragm.
Since it is also bonded on the junction, a sodium-free material is preferable (if sodium is included, so-called channels are likely to be formed on the silicon surface, degrading the characteristics of the pn junction).
つぎにカバ一部材の上面側からチタンーパラジウムー金
を順に蒸着し、ダイアフラムのコンタクト部23Aに設
けられた接続用窓からカバ一部材中の貫通孔26の側面
を通り、カバ一部材25の表面(上面)に通じる金属薄
膜27を設ける。Next, titanium-palladium-gold is sequentially vapor-deposited from the upper surface side of the cover member, passes through the side surface of the through hole 26 in the cover member from the connection window provided in the contact portion 23A of the diaphragm, and is applied to the cover member 25. A metal thin film 27 communicating with the surface (upper surface) is provided.
続いて、シリコンダイアフラム21のゲージ抵抗23を
配置した面とは反対面の周辺肉厚部220表面に、中孔
28を有し、シリコンダイアフラム21と熱膨脹係数の
類似したガラス管29を例えば陽極結合法により一体的
に結合する。Subsequently, a glass tube 29 having a hollow hole 28 and having a coefficient of thermal expansion similar to that of the silicon diaphragm 21 is bonded, for example, by anodic bonding, on the surface of the peripheral thick portion 220 of the silicon diaphragm 21, which is opposite to the surface on which the gauge resistor 23 is arranged. be united as one body by law.
カバ一部材25の上にセラミック板30を対向させ、予
めセラミック板30上に形成されていたメタライズ電極
31と、前述のようにしてカバ一部材25上に形成され
た金属薄膜27とをハンダボールで接着する。A ceramic plate 30 is placed oppositely on the cover member 25, and the metallized electrode 31 previously formed on the ceramic plate 30 and the metal thin film 27 formed on the cover member 25 as described above are connected with solder balls. Glue with.
ガラス管29の一部およびメタライズ電極31と電気的
に連結した電気導体32の一部を外部に露出させた状態
でレジンモールド33を施す。A resin mold 33 is applied with a portion of the glass tube 29 and a portion of the electrical conductor 32 electrically connected to the metallized electrode 31 exposed to the outside.
かかる構成からなる半導体圧力変換器は次の特徴を持つ
。The semiconductor pressure transducer having such a configuration has the following features.
(1)シリコンダイアフラム21のpn接合表面はゲー
ジ抵抗23の形成プロセス中に形成された二酸化シリコ
ン膜35の他、真空など一定雰囲気の空洞24、カバ一
部材25および場合によっては貴金層を最上層とする金
属薄膜27により覆われ、外界から完全に隔離されるた
め周囲環境による劣化がない。(1) The pn junction surface of the silicon diaphragm 21 is covered with a silicon dioxide film 35 formed during the process of forming the gauge resistor 23, a cavity 24 in a constant atmosphere such as a vacuum, a cover member 25, and in some cases a precious metal layer. Since it is covered with the upper metal thin film 27 and is completely isolated from the outside world, there is no deterioration due to the surrounding environment.
(2)シリコンダイアフラムとそれに熱膨脹係数の類似
したカバ一部材とを陽極結合法により直接接着した場合
には、シリコンダイアフラムの受ける熱応力が著しく小
さく、お互いが無機物同士で結合しているためクリープ
の発生がなく、ダイアフラムの起歪特性が安定している
。(2) When a silicon diaphragm and a cover member with a similar coefficient of thermal expansion are directly bonded together using an anodic bonding method, the thermal stress that the silicon diaphragm receives is extremely small, and since they are bonded to each other by inorganic substances, creep is prevented. There is no occurrence, and the strain characteristics of the diaphragm are stable.
また電極形成前にシリコンダイアフラムとカバ一部材を
接着するため、接着温度を1000℃またはそれ以上と
することも可能となり、このためシリコンと熱膨脹係数
の類似した高融点ガラス(例えばコーニング社ハイレツ
クス7740)を接着剤とすることができる。Furthermore, since the silicon diaphragm and cover member are bonded before electrode formation, it is possible to increase the bonding temperature to 1000°C or higher, which makes it possible to use high melting point glass (for example Corning Hilex 7740) with a similar coefficient of thermal expansion to silicon. can be used as adhesive.
したがって無機接着剤を用いる場合でもダイアフラムの
受ける熱応力を小さくできる。Therefore, even when an inorganic adhesive is used, the thermal stress applied to the diaphragm can be reduced.
(3)ダイアフラム21上の電極とカバ一部材25上の
電極を同時に形成できるため、電気配線工程が著しく簡
単になる。(3) Since the electrodes on the diaphragm 21 and the electrodes on the cover member 25 can be formed at the same time, the electrical wiring process is significantly simplified.
(4)シリコンダイアフラムとカバ一部材の接着および
シリコンダイアコラム上の電極とカバ一部材上の電極形
成工程を、個別チップ単位ではなく、多数のチップをふ
くむウエハ状態でおこなえるため、作業性が良くなって
大量生産が容易となり、製造コストが下がる。(4) The process of adhering the silicon diaphragm and the cover member and forming the electrodes on the silicon dia column and the cover member can be performed on a wafer containing many chips rather than on an individual chip basis, which improves work efficiency. This makes mass production easier and reduces manufacturing costs.
(5)カバ一部材上の電極と外部配線用端子とをワイヤ
を用いず直接ハンダにより接続するため、振動等による
ワイヤの断線がなく信頼性が高くなる。(5) Since the electrodes on the cover member and the external wiring terminals are directly connected by soldering without using wires, there is no disconnection of the wires due to vibrations, etc., and reliability is increased.
以上、本発明の1実施例を述べたが、ダイアフラム上に
結合するカバ一部材としてはガラス以外の絶縁物、ある
いは少なくとも貫通孔側面(およびその他の必要な表面
)に絶縁膜を形成したシリコンなどが使用できることは
明らかである。Although one embodiment of the present invention has been described above, the cover member bonded onto the diaphragm may be made of an insulating material other than glass, or silicon with an insulating film formed on at least the side surface of the through hole (and other necessary surfaces). It is clear that can be used.
シリコンを材料とする場合は特に加工性の面ですぐれて
いる。When silicon is used as a material, it is particularly excellent in terms of workability.
また以上の説明では、シリコンダイアフラム21の表面
に絶縁膜35がある場合を述べたが、シリコンダイアフ
ラムとカバ一部材を陽極結合法で一体化する場合は、シ
リコンダイアフラムの表面にシリコンが露出していても
よい。Furthermore, in the above explanation, the case where the insulating film 35 is present on the surface of the silicon diaphragm 21 has been described, but when the silicon diaphragm and the cover member are integrated by an anodic bonding method, silicon is exposed on the surface of the silicon diaphragm. It's okay.
この時はダイアフラム上のコンタクト用窓開け工程が省
け工程が簡単になる利点がある。In this case, there is an advantage that the process of opening a contact window on the diaphragm can be omitted and the process can be simplified.
またカバ一部材25とダイアフラム21間の空洞24は
真空に保持されるものとして説明したが、窒素などの不
活性気体を閉じこめてよいこともあきらかであり、この
ようにすれば圧力変換器の出力温度特性や感度を調節す
ることができる。Although the cavity 24 between the cover member 25 and the diaphragm 21 has been described as being kept in a vacuum, it is clear that an inert gas such as nitrogen may be trapped therein, and in this way, the output of the pressure transducer can be increased. Temperature characteristics and sensitivity can be adjusted.
さらにまた、シリコンダイアフラムからカバ一部材上へ
の電極取り出し法として、貫通孔を通す方法について述
べたが、シリコンダイアフラムの周辺部にカバ一部材に
より覆われない領域を残し、貴金属を最上層とする金属
多層膜でダイアフラムのpn接合部を完全に覆い、かつ
その金属多層膜をカバ一部材の側面を這わせてカバ一部
材表面に引き上げる方法がある。Furthermore, as a method for taking out the electrode from the silicon diaphragm onto the cover member, we have described the method of passing the through hole through the hole. There is a method in which the pn junction of the diaphragm is completely covered with a metal multilayer film, and the metal multilayer film is stretched over the side surface of the cover member and pulled up to the surface of the cover member.
また実施例にはコンタクト部23Aとしてp型不純物層
を使用した例を述べたが、アルミニウムなどの金属薄膜
を使用しても良いことはあきらかである。Further, in the embodiment, an example was described in which a p-type impurity layer was used as the contact portion 23A, but it is obvious that a metal thin film such as aluminum may also be used.
第6図はこの場合の実施例の要部を示すための第4図と
同様の断面図であり、第4図と同一符号は同一部分をあ
らわす。FIG. 6 is a sectional view similar to FIG. 4 for showing the main parts of the embodiment in this case, and the same reference numerals as in FIG. 4 represent the same parts.
図から明らかなように、本実施例ではシリコンダイアフ
ラム21の上面にカバ一部材25を配置したとき、ダイ
アフラム21の周縁部にあるコンタクト部23Aの一部
がカバ一部材で覆われない状態で残される。As is clear from the figure, in this embodiment, when the cover member 25 is placed on the upper surface of the silicon diaphragm 21, a part of the contact portion 23A at the peripheral edge of the diaphragm 21 is left uncovered by the cover member. It will be done.
そしてコンタクト部23A上の絶縁膜35にコンタクト
用窓43を設け、前記窓43に半導体とオーミツク接触
するに適した金属を蒸着等した後、貴金属を最上層とす
る金属多層膜で、ダイアフラム21の前記残されたpn
接合部を完全に覆い、同時にその金属多層膜をカバ一部
材25の側面にも形成して、カバ一部材の上面までの電
極引出しを行なう。A contact window 43 is provided in the insulating film 35 on the contact portion 23A, and a metal suitable for making ohmic contact with the semiconductor is deposited on the window 43, and then a metal multilayer film with a noble metal as the top layer is formed on the diaphragm 21. The remaining pn
The joint is completely covered, and at the same time, the metal multilayer film is also formed on the side surface of the cover member 25, so that the electrode can be drawn out to the upper surface of the cover member.
その後、第4図について前述したようにして外部接続の
ための電気導体を構成する。Electrical conductors for external connections are then constructed as described above with respect to FIG.
本実施例の場合も、ダイアフラム上のpn接合が絶縁膜
およびその上の多重金属薄膜で覆われるので外部環境に
よる特性劣化が防止されるのはもちろん,さらにカバ一
部材に貫通孔を穿つ必要がなくなるので、加工製造が容
易になる利点がある。In the case of this embodiment as well, since the pn junction on the diaphragm is covered with an insulating film and a multilayer metal thin film on top of the insulating film, deterioration of characteristics due to the external environment is not only prevented, but also there is no need to drill a through hole in the cover member. This has the advantage of facilitating processing and manufacturing.
第1図は本発明の応用例の概略断面図で、通常のステム
54を貫通する電気導体兼支持棒52の先端に第4,6
図に示したようなダイアフラム組立体を浮かせて固定保
持し、開口筒状体55で覆って圧力室51を形成したも
のである。FIG. 1 is a schematic cross-sectional view of an application example of the present invention, in which the electrical conductor/support rod 52 passing through a normal stem 54 has a fourth and a sixth electrode at its tip.
A diaphragm assembly as shown in the figure is fixedly held floating and covered with an open cylindrical body 55 to form a pressure chamber 51.
この場合は電気的接続と機械的接続が同時に達成される
ので構造が簡単となり、コストの低減が可能であると共
にダイアフラム組立体が機械的に保護される利点がある
。In this case, the electrical connection and the mechanical connection are achieved at the same time, so the structure is simplified, costs can be reduced, and the diaphragm assembly is mechanically protected.
第8図は本発明の他の応用例で、カバ一部材250貫通
孔26に電気導体兼支持棒52の先端を挿入して、嵌合
固定したものであり、このようにすれば、機械的強度が
一層強化される。FIG. 8 shows another application example of the present invention, in which the tip of the electric conductor/support rod 52 is inserted into the through hole 26 of the cover member 250 and fixedly fitted. Strength is further strengthened.
この場合は、金属多層膜27はダイアフラム21上およ
びカバ一部材25の貫通孔側面のみに設ければよく、カ
バ一部材25の上面には設ける必要がない。In this case, the metal multilayer film 27 need only be provided on the diaphragm 21 and on the side surface of the through hole of the cover member 25, and does not need to be provided on the upper surface of the cover member 25.
さらに、同図に点線で示したように、ダイアフラム21
の反対面に、第4図に示したような、圧力導入用中孔2
8Aを有するダイアフラム補強部材29を接着するとダ
イアフラム肉薄部を外部の機械的衝撃から保護でき、よ
り好ましい構造となる。Furthermore, as shown by the dotted line in the figure, the diaphragm 21
On the opposite side of the
By adhering the diaphragm reinforcing member 29 having a diameter of 8A, the thin portion of the diaphragm can be protected from external mechanical impact, resulting in a more preferable structure.
第1図は従来の半導体圧力変換器の断面図、第2図およ
び第3図は他の従来型半導体圧力変換器の断面図および
■一■線からみた平面図、第4図は本発明になる半導体
圧力変換器の1実施例の断図面、第5図は第4図のA−
A線からみた平面図、第6図は本発明の他の実施例の要
部の断面図、第7図および第8図はそれぞれ本発明の応
用例の概略断面図である。
21・・・・・・シリコンダイアフラム、22・・・・
・・肉厚部(固定領域)、23・・・・・・ゲージ抵抗
、23A・・・・・・コンタクト部、24・・・・・・
空洞、25・・・・・・カバ一部材、26・・・・・・
貫通孔、27・・・・・・金属多層膜、32・・・・・
・電気導体、35・・・・・・絶縁膜、43・・・・・
・コンタクト用窓。FIG. 1 is a cross-sectional view of a conventional semiconductor pressure transducer, FIGS. 2 and 3 are cross-sectional views of other conventional semiconductor pressure transducers and a plan view taken from line 1, and FIG. 4 is a cross-sectional view of a conventional semiconductor pressure transducer. A cross-sectional view of one embodiment of the semiconductor pressure transducer shown in FIG.
FIG. 6 is a plan view taken along line A, FIG. 6 is a cross-sectional view of a main part of another embodiment of the present invention, and FIGS. 7 and 8 are schematic cross-sectional views of applied examples of the present invention. 21...Silicon diaphragm, 22...
...Thick part (fixed area), 23... Gauge resistance, 23A... Contact part, 24...
Hollow, 25...Cover part, 26...
Through hole, 27...Metal multilayer film, 32...
・Electric conductor, 35... Insulating film, 43...
・Contact window.
Claims (1)
域となっている半導体ダイアフラムと、前記ダイアフラ
ムのゲージ抵抗が形成されているのと同じ面上に形成さ
れ、■端がゲージ抵抗の1端に重なり、他端が前記ダイ
アフラムの周縁まで延長されたコンタクト部と、前記ダ
イアフラムとほぼ等しい熱膨脹係数を有し、前記ダイア
フラムの固定領域に無機接着法により気密接着されて、
前記ダイアフラムのゲージ抵抗が形成された面との間に
気密空洞を形成し、かつ前記コンタクト部に対向する貫
通孔を有するカバ一部材とよりなる半導体圧力変換器に
おいて、カバ一部材の少なくとも前記貫通孔の側壁の一
部が絶縁性であり、少なくとも前記コンタクト部および
カバ一部材の貫通孔側壁の絶縁性部分に一体形成された
多層金属膜が設けられ、これにより前記ダイアフラムの
周縁に位置する前記コンタクト部がすべてカバ一部材お
よび多層金属膜で覆われたことを特徴とする半導体圧力
変換器。 2 無機接着が陽極結合法によって行なわれたことを特
徴とする第1項記載の半導体圧力変換器。 3 多層金属膜の最上層が貴金属であることを特徴とす
る第1または第2項記載の半導体圧力変換器。 4 片面に複数のゲージ抵抗が形成され、周縁が固定領
域となっている半導体ダイアフラムと、前記ダイアフラ
ムのゲージ抵抗が形成されているのと同じ面上に形成さ
れ、1端がゲージ抵抗の1端に重なり、他端が前記ダイ
アフラムの周縁まで延長されたコンタクト部と、前記ダ
イアフラムとほぼ等しい熱膨脹係数を有し、前記ダイア
フラムの固定領域に無機接着により気密接着されて、前
記ダイアフラムのゲージ抵抗が形成された面との間に気
密空洞を形成し、かつ前記コンタクト部に対向する貫通
孔または切欠きを有するカバ一部材とよりなる半導体圧
力変換器において、カバ一部材の前記貫通孔または切欠
きの側壁の少なくとも一部は絶縁性であり、前記ダイア
フラムの前記片面の少なくともカバ一部材と接触する面
およびカバ一部材で覆われない部分は、前記貫通孔また
は切欠きに対向する個所に設けられたコンタクト用窓を
除いて絶縁膜で覆われ、前記コンタクト用窓およびカバ
一部材の貫通孔または切欠きの側壁の絶縁性部分に一体
形成された多層金属膜が設けられ、これによりカバ一部
材の周縁からはみ出した前記コンタクト部がすべて、絶
縁膜および多層金属膜で覆われたことを特徴とする半導
体圧力変換器。 5 無機接着が陽極結合法によって行なわれたことを特
徴とする第4項記載の半導体圧力変換器。 6 多層金属膜の最上層が貴金属であることを特徴とす
る第4または第5項記載の半導体圧力変換器。 7 カバ一部材がダイアフラムと同じ半導体であり、か
つ少なくとも前記貫通孔または切欠きの側壁の表面を絶
縁性膜で覆った材料からなることを特徴とする第4ない
し第6項のいずれかに記載の半導体圧力変換器。[Scope of Claims] 1. A semiconductor diaphragm having a plurality of gauge resistors formed on one side and a peripheral edge serving as a fixed area; overlaps one end of the gauge resistor, has a contact portion whose other end extends to the periphery of the diaphragm, has a coefficient of thermal expansion approximately equal to that of the diaphragm, and is hermetically bonded to a fixing region of the diaphragm by an inorganic adhesive method,
In a semiconductor pressure transducer comprising a cover member forming an airtight cavity between the surface of the diaphragm on which the gauge resistor is formed and having a through hole facing the contact portion, at least the through hole of the cover member A part of the side wall of the hole is insulative, and a multilayer metal film integrally formed on at least the insulating portion of the through-hole side wall of the contact portion and the cover member is provided, so that the metal film located at the periphery of the diaphragm is A semiconductor pressure transducer characterized in that all contact parts are covered with a cover member and a multilayer metal film. 2. The semiconductor pressure transducer according to item 1, wherein the inorganic bonding is performed by an anodic bonding method. 3. The semiconductor pressure transducer according to item 1 or 2, wherein the uppermost layer of the multilayer metal film is a noble metal. 4 A semiconductor diaphragm on which a plurality of gauge resistors are formed on one side and whose periphery is a fixed area, and a semiconductor diaphragm formed on the same side on which the gauge resistors of the diaphragm are formed, and one end of which is formed on the same side as the gauge resistor. a contact portion whose other end extends to the periphery of the diaphragm; and a contact portion having a coefficient of thermal expansion substantially equal to that of the diaphragm, and which is airtightly bonded to a fixing region of the diaphragm by inorganic adhesive to form a gauge resistor of the diaphragm. In the semiconductor pressure transducer, the semiconductor pressure transducer includes a cover member that forms an airtight cavity between the cover member and the contact portion, and has a through hole or notch facing the contact portion. At least a portion of the side wall is insulating, and at least a surface of the one side of the diaphragm that contacts the cover member and a portion that is not covered by the cover member is provided at a location opposite to the through hole or notch. Except for the contact window, the contact window is covered with an insulating film, and a multilayer metal film is integrally formed on the contact window and the insulating portion of the side wall of the through hole or notch of the cover member. A semiconductor pressure transducer characterized in that all of the contact portions protruding from the periphery are covered with an insulating film and a multilayer metal film. 5. The semiconductor pressure transducer according to item 4, wherein the inorganic bonding is performed by an anodic bonding method. 6. The semiconductor pressure transducer according to item 4 or 5, wherein the uppermost layer of the multilayer metal film is a noble metal. 7. According to any one of items 4 to 6, the cover member is made of the same semiconductor as the diaphragm, and is made of a material in which at least the surface of the side wall of the through hole or notch is covered with an insulating film. semiconductor pressure transducer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15242477A JPS581551B2 (en) | 1977-12-20 | 1977-12-20 | semiconductor pressure transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15242477A JPS581551B2 (en) | 1977-12-20 | 1977-12-20 | semiconductor pressure transducer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5484985A JPS5484985A (en) | 1979-07-06 |
JPS581551B2 true JPS581551B2 (en) | 1983-01-11 |
Family
ID=15540204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15242477A Expired JPS581551B2 (en) | 1977-12-20 | 1977-12-20 | semiconductor pressure transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS581551B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI842307A (en) * | 1984-06-07 | 1985-12-08 | Vaisala Oy | FOERFARANDE FOER AOSTADKOMMANDE AV GENOMFOERING I EN MIKROMEKANISK KONSTRUKTION. |
WO2016015781A1 (en) * | 2014-08-01 | 2016-02-04 | Vega Grieshaber Kg | Pressure measuring arrangement and method for producing said pressure measuring arrangment |
-
1977
- 1977-12-20 JP JP15242477A patent/JPS581551B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5484985A (en) | 1979-07-06 |
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