JPS58142738A - Ion beam generator - Google Patents
Ion beam generatorInfo
- Publication number
- JPS58142738A JPS58142738A JP57025488A JP2548882A JPS58142738A JP S58142738 A JPS58142738 A JP S58142738A JP 57025488 A JP57025488 A JP 57025488A JP 2548882 A JP2548882 A JP 2548882A JP S58142738 A JPS58142738 A JP S58142738A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- electric field
- gas
- top edge
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Tubes For Measurement (AREA)
Abstract
Description
【発明の詳細な説明】
不発明は液体物質をイオン化すると共に、ガスをイオン
化するイオンピー１１発生装置に関する。DETAILED DESCRIPTION OF THE INVENTION The invention relates to an IonP 11 generator for ionizing liquid substances as well as gases.
ガリウム等の金属イオンによるイオンビーム露光がレジ
スト内でのイオンの拡散か電子ビーム（こよる露光に比
較して小さいことから、サブミクロンパターン製作用の
露光として注目されており、その為各方面において金属
あるいは合金をイオン化するための金属イオン源の研究
が進められている。このイオン源は針状部材の針状先端
部にガリ・“ツムあるいは共晶合金等の液状物質を供給
し、史に該先端部近傍に“強電界を形成し、該先１端部
／）１１ら金属あるいは合金を構成りる物７１のイオン
を”ｊｌ １１ざゼるようにしている。又半導体デバイ
スの製）ろ過程においでは刀スイオン源にＪ、っ（）′
ルｒン￥ｔの不活性力゛スをイオン化し、該ｒオン（４
〕よ−）【ウ−［ハ等の表面に１ツザング等の微細加１
をりることも行なわれ゛（いる。このガスｒオン源は別
状部（Ａの別状先端部近傍に強電Ｗを形成するどＪしに
イオン化カスを供給し、該強電界によってカスをイオン
化ηるＪ、うにしている。Ion beam exposure using metal ions such as gallium is attracting attention as an exposure method for producing submicron patterns because it is smaller than exposure using an electron beam (e.g., due to ion diffusion within the resist), and is therefore attracting attention as an exposure method for producing submicron patterns. Research is progressing on metal ion sources for ionizing metals or alloys.This ion source supplies a liquid substance such as gully or eutectic alloy to the tip of a needle-like member, and A strong electric field is formed near the tip so that ions of a substance 71 constituting a metal or an alloy are drawn from the tip (11). In the filtration process, the ion source is heated ()'
The inert force of the run \t is ionized, and the rion (4
]Yo-)
This gas r-on source forms a strong electric current W near the tip of the separate part (A) and supplies ionized scum with the strong electric field to ionize the scum. J, I'm making sea urchins.
さて超１ｓＩ等の半導体デバイスの製造過程で、イオン
ビーム露光、イオン２１人、イオンＩツーＦング等を行
う場合には、使用号−る高輝度のイオンビームを極めて
細く収束し、微細なイオンビーｌ＼によってそれらの処
理を行い得ることが、デバイスの集積度を高める十で重
要である。イオンビームの輝度を高め、それを細く収束
づるＩ、：めにはｌ＝ ｉｄ：（Ｌ ｌ：：金属イΔン
源においては帽状先端部表面の液状物質が形成Ｊる円錐
突起部の径を小さくすること、叉カスイオン１ｌｌｌｊ
においてｉＪ、釦状部祠の別状先端部の径を小さく（ｊ
ることが必要であろ１、しかしイ１がら該釧状部＋４の
Ｉｌｌ’ｌ王粕ｌσには限界がありその先端部の径１ま
約Ｇ、”１１１ｍ稈庶Ｃ゛あり、それ以十小さくＪるこ
とは１本１ ｆｆ１ｌｌ Ｔある。したか−）で、たと
λば従来のガスイオン源においては高ｈ１１１αのイオ
ンビーｌいを発く１−さｔｉろ（ことは困輔で゛あり、
又イのビームを一１分に細く収東−りることはできない
。Now, in the process of manufacturing semiconductor devices such as ultra-1sI, when performing ion beam exposure, ion 21 exposure, ion I2F, etc., a high-intensity ion beam is focused extremely narrowly, and a fine ion beam is used. It is important to be able to perform these processes using l\\ for increasing the degree of device integration. In order to increase the brightness of the ion beam and narrow it down, the liquid substance on the surface of the cap-shaped tip of the metal ion source forms a conical protrusion. To reduce the diameter, the fork ion 1lllj
In iJ, the diameter of the separate tip of the button-shaped part shrine is reduced (j
However, there is a limit to the diameter of the tip of the cylindrical part +4, and the diameter of the tip is 1 to 1 G, and the culm C is 111 m. For example, in a conventional gas ion source, a conventional gas ion source emits an ion beam with a high h111α, which is very difficult. ,
Also, it is not possible to converge the beam to a narrow 11 minutes.
更に、例えばガスイオン源を使用し、半導体つ７［ハの
特定の表面部分に）フルイン等のイオンを衝撃して該表
面部分を王ツチングすることにＪ、って微細加工したり
、清浄４１面を形成し、その後該つ−１ハを金属イオン
源に導入して該清浄４１而に金属あるいは合金を構成ｉ
Ｊる物質イオンを注入Ｊる場合、つ」ニハをガスイオン
源から金属イオン源に移〈Ｊ際（に清浄な面が汚染され
る恐れがあると１（にその３，１−ろなつＴハの移動作
業（，１児だ面倒である。Furthermore, for example, microfabrication may be carried out by using a gas ion source to bombard a specific surface portion of a semiconductor with ions such as Fluin, thereby cleaning the surface portion. form a surface, and then introduce the metal ion source into a metal ion source to form a metal or alloy i.
When implanting ions of a certain substance, transfer the ions from the gas ion source to the metal ion source. Ha's moving work (I have only one child, so it's a hassle.
本発明の第１のｆｉｌ的は十分に細く収中げることが（
パぎる高輝度イ′Ａンビームを発生することが可能なイ
オンビーム発１１装置を提供することである。The first objective of the present invention is that it can be made sufficiently thin (
It is an object of the present invention to provide an ion beam generator 11 capable of generating an extremely bright ion beam.
本発明の第２の目的は金属９合金及びガスの両イΔンを
発生さけることが（きるイオンビー１１光ｉ１駅ｉ賀を
１是供りる（二とで゛ある。The second object of the present invention is to avoid the generation of both metal and gas ion beams.
不発１り目Ｊ７３つくイΔンビーム発生駅ｈ゛はイオン
化１Ｊへさ物質を貯蔵刀るリリ゛−ハ部ど、該リリ゛−
バ部から液状物ａ［が供給される別状先端部をｈした釧
状部祠ど、鵬釧状先端部に強電界を形成りるだ砧の手段
と、護釦状先端部近傍に（−Ａン化す−ベぎガスを供給
づ−るための手段どより成る１、以Ｆ本発明の一実施例
を添イ４図面に基づき詳）４（りる１゜
第１図は本発明に塁づく−イオンビー１８発１１装首を
示しＣａ５す、１は底部に細孔２が設ｉ−Ｊられｌこタ
ンタル等の金属で形成されたリリ゛−バＣ′ｄリリ、該
リリ“−バ１内部にはｉｔ（ｇ １／？金属９例λば白
金とｆｉｌｌ索どから成る共晶合金（１〕ｔ−１（＞３
が入れらｔｌ（いる。該リザーバ底部の細孔２を貫通し
−Ｃタンクステン製の釘状部＋Ａ４が配置されでいるが
、該別状部祠４の一端は該リザーバ１の内面に例えばス
ボッｊ−溶接に五っＣ固着されでおり、電’ｉｆｆ ｒ
ＪＩ磨（Ｊ３−
１）、λて１１状にされた他端は引ぎ出し電極５に夕・
１面して配置される。該リリ゛−バ１の周囲には加熱ヒ
ータ６が巻回されでおり、該加熱ヒータ６にはイオン化
室７外部の加熱電源（図示せず）から加熱電流が供給さ
れ１１する１、該リザーバ１はリザ−バ底部！Ａ８にネ
ジ」１めされで固定され、叉該支持部＋ＡＥ’は導電ｔ
ｌ支（１≦）にネジ止めされている。該支社９はイオン
化室７の１部に配置された絶縁碍子１０に固着されてい
る。該イメン化室７内には更にはガス導入管１２が配置
されており、該カス導入管１２は絶縁碍子′１０内を川
通し、弁１３を介し一〇例えばアルゴンガスが１入され
たガスボンベ１／Ｉに接続されている。該イメン化室７
内のガス導入管１２は例えばステンレス等の尋常性物質
で形成され、他の部分にお【フる導入管は例えばテノ［
１ンによって形成。ト４１（いる。尚リザーバ１．釧払
部祠１．ヒータ６、イオン化室内のガス導入管１２等に
（Ｊ接地電位の陰極１５に対し、２０ＫＶ乃至１００
Ｋ Ｖの高Ｘ’ｔｉ ＦＴが外部電源（図示ｌ↓す′）
から印加され、又リザーバ１．１１状部材４等と引４−
き出し電極５どの間には５ Ｋ Ｖ ７１Ｊ〒１０ Ｋ
Ｖの引さ出し電）１が印加（きねる３゜
十）７Ｉ（シた如き構成の装置におい（、ｉｌ状部祠１
と引き出し電極！′）どの間に電１１：４印加１Ｊると
、該針状部材４の別状先端部には電界が集中１１−る３
、ぞの結果り］ｆ−バ１内部の加熱され−（液状どなっ
ている共晶合金Ｐｔ−Ｆ３３は該強電界によって底部の
細孔２を通り、↓１１部祠４先々ｉ：部に３１．で゛引
出される。第２図はぐ１状部祠４の先ｏｌｌｉ部を示し
ており、該先端部の１）１−１３３は強電Ｗにｊ、つＣ
テーラ−の円錐（丁ａｙｌｏｒ Ｃ０ＩＩＯ＞と称され
る円ＩＩＩ突起１６を形成りる３、この円錐突起１６先
端の径は該♀１１部材４の先端部の径が約１μｍである
のに対し０．０３４ｚｍ稈１抹と極めて尖鋭とな−）て
いるため、この先端にｔＪＬ更に電界が集中する。従−
）で先端部のＰｔ１ｉ’３は電界蒸発し、イオン化され
白金（１つ１）イオンと槽１累（Ｂ）イオンとなつ（引
出され、陰極１５に」、−）で１ノ１１速される１、こ
のＪ、うにし−（光９−されたイオンビー八は非常に輝
度がｉ！１いが１−）劃−［３の温石がある渇ｐに保１
．′１されでいないと安定なイオンビームの５Ｆ ４が
回動どなる、１８１−なわＩ）、ＰＩ−Ｂの温石が低い
ど、１１状部材４０表面を先１１η：部に向【ノて移送
される通路の移送抵抗が高＜４ｔす、先端部より電９Ｉ
魚介に供されるｐｃ −［３の流れが不安定、不連続と
／ｉす、結果としてイオンビームの不安定性を１ｔ（＜
ことになる。史に温麻が合金の翔（点ｊメ下となるど、
合金は固化し、ビームの介／１は停什りる。、二のため
本実施例においては、リリ゛−ハ１周囲に巻回されたｌ
＝−夕６を加熱し、輻射熱によっ−Ｃ間接的にリザーバ
１、帽状部材４、ガリウム３を加熱し、安定に連続しＣ
す（アーバ内のＰ １１− Ｂが針状部材の先端部に移
送されるようにしＣいる。The unexploded first station, J73, is the ion beam generating station h.
In the case of a hook-shaped part where a separate tip is supplied with a liquid material a from a part, a strong electric field is formed in the tip of the hook, 1. An embodiment of the present invention is attached hereunder in detail based on the drawings. 4. Base - Shows 18 ion beams and 11 heads, Ca5, 1 has pores 2 at the bottom, I-J, and a reliever C'd made of metal such as tantalum. Inside the bar 1, it (g 1/? Metal 9 example λ is a eutectic alloy (1) made of platinum and fill wire) t-1 (>3
A nail-shaped part + A4 made of -C tank stainless steel is placed through the hole 2 at the bottom of the reservoir, and one end of the separate part 4 is inserted into the inner surface of the reservoir 1 by, for example, a slot. j - 5C is fixed to the weld, and the electric 'if r
JI polishing (J3-1), the other end of the
It is placed facing one side. A heater 6 is wound around the reservoir 1, and a heating current is supplied to the heater 6 from a heating power source (not shown) outside the ionization chamber 7. 1 is the bottom of the reservoir! It is fixed to A8 with one screw, and the support part +AE' is conductive.
It is screwed to the l support (1≦). The branch 9 is fixed to an insulator 10 placed in a part of the ionization chamber 7. A gas introduction pipe 12 is further arranged in the oxidation chamber 7, and the waste introduction pipe 12 passes through the insulator 10 and is connected to a gas cylinder containing, for example, argon gas through a valve 13. Connected to 1/I. The image conversion room 7
The gas inlet pipe 12 inside is made of common material such as stainless steel, and the inlet pipes in other parts are made of a common material such as stainless steel.
Formed by 1. In addition, the reservoir 1.
K V high X'ti FT is external power supply (Illustrated below)
5 K V 71J 〒10 K
V voltage drawn) 1 is applied (Kinel 3゜0) 7I (In a device with a structure like a
And the extraction electrode! ') When 1J of electric current 11:4 is applied between 11 and 3, the electric field is concentrated at the separate tip of the needle member 4.
, the result] The eutectic alloy Pt-F33, which is heated inside the f-bar 1 and is in a liquid state, passes through the pore 2 at the bottom due to the strong electric field, 31. It is pulled out at 31. Fig. 2 shows the tip part of the hog-shaped part shrine 4, and 1) 1-133 of the tip part is connected to the strong electric current W with j and C.
A circular III protrusion 16 called a Taylor's cone (C0IIO) is formed 3, and the diameter of the tip of this conical protrusion 16 is 0, whereas the diameter of the tip of the ♀11 member 4 is about 1 μm. Since the culm is extremely sharp (.034zm), the electric field is further concentrated at this tip. subordinate
), the Pt1i'3 at the tip is evaporated in an electric field, ionized, and combined into platinum (one by one) ions and one by one (B) ions (pulled out and sent to the cathode 15, -) at a speed of 1 to 11. 1, this J, sea urchin (light 9- the ion bee eight is very bright!
．． If not, the stable ion beam 5F4 will rotate, 181-rope I), the warm stone of PI-B will be low, etc., and the surface of the 11-shaped member 40 will be transferred towards the 11η: part. The transfer resistance of the passage is high < 4t, and the electric current is 9I from the tip.
The flow of pc-[3 used for seafood is unstable and discontinuous, and as a result, the instability of the ion beam is reduced to 1t (<
It turns out. In history, Atsuma is the alloy sho (the point is below, etc.)
The alloy solidifies and the beam stops. , two, in this embodiment, the lubricant wound around the reliever 1 is
= heating 6 and indirectly heating reservoir 1, cap member 4, and gallium 3 by radiant heat, stably and continuously heating C
(P11-B in the arbor is transferred to the tip of the needle-like member.)
更に本実施例においては、ガスボンベ１４からｉ′ルゴ
ンガスが弁１３を介してイオン化室７内に導入される。Furthermore, in this embodiment, i' irgon gas is introduced into the ionization chamber 7 from the gas cylinder 14 via the valve 13.
該ガスは１目λ部＋Ａ７′Ｉの先端部の液状合金か形成
ηる円鉗突起近傍の強電界によって電界電離し、イオン
化さ１する。The gas is ionized by a strong electric field in the vicinity of the circular protrusion formed by the liquid alloy at the tip of the first eye λ part +A7'I, and becomes ionized.
このように」一連しｌこ実施例では液状合金か形成りる
微小径の先端部から合金を構成づる物質イオンとカスイ
オンとを光４トさゼることが（・き、いり′れのイオン
ビームち輝度が高く、又細く収束−づることができる１
、第３図は第１図に示したイオンビーム発生源を使用し
たイオンビーム装置を示している。２０はり１１図に示
したイオンじ−ム発’Ｉ： ｉＤ：＋であり、該発生源
２０かＩう発１した合金イオンどカスイオンは第１の静
゛１ｈレンス２１によ・〕−（収東され、大剣スリブ１
〜２２を通ってウィーン型の質が分離器２３に入用する
。該ウィーン型の買昂分−（器２３は一対の電（Φ２／
Ｉど一対の磁極２５どより成り、該電極２／ｌによる電
場と該ｖＡ極２５による磁場が直交する。」、うに配置
されてａ５す、該電場の強さと磁場の強さとを適宜選択
りることによパ）で、任怠の質Φのイオンを出印１スリ
ット２６．Ｊ、り取り出Ｊことがで・さる。部分ｔｌｌ
ｌｌ ｃ５れた１、＋１定のイ、Ｉンは第２の静電レン
ズ２７によって半ｉＮ ｆＡ祠ｆｉｌ ；）８１−に細
く収束さ１′１、るど几に、静電偏向板２９によって偏
向され、月利２８１−の１［意の領１或に照Ｄ＝１され
る。In this way, in this series of embodiments, it is possible to irradiate the material ions and gas ions constituting the alloy from the tiny tip of the liquid alloy. The beam has high brightness and can be narrowly converged1
, FIG. 3 shows an ion beam apparatus using the ion beam generation source shown in FIG. The ion beams shown in Fig. 11 are generated from the ion source 20, and the alloy ions generated by the generation source 20 and the gas ions are generated by the first static 1 hour period 21. Contained East, Great Sword Slyb 1
The Wien-type quality passes through .about.22 and enters the separator 23. The Vienna type purchase part - (the vessel 23 is a pair of electric wires (Φ2/
It consists of a pair of magnetic poles 25, and the electric field due to the electrode 2/l and the magnetic field due to the vA pole 25 are orthogonal to each other. '', and by appropriately selecting the strength of the electric field and the strength of the magnetic field, the ions of the quality Φ can be drawn through one slit 26. J, it is possible to take out J. partial tll
ll c5 is 1, +1 constant A, I is narrowly converged to half iN fA filter by the second electrostatic lens 27; It is deflected, and the monthly interest rate is 281-1 [the area of interest 1 or the light D=1.
に述しＩこイオンビーム装置（こおいて、 ＋４￥ｚ１
２８７−
表面の］ツｆングをｉ−ｊう場合、質量分離器２３にお
（）る電場の強さと磁場の強さはアルゴンカスイオンの
みが出射スリブ１〜２６を通過覆るように設定される。The ion beam device described above (+4￥￥1
287- When extracting the surface], the strength of the electric field and the strength of the magnetic field in the mass separator 23 are set so that only the argon gas ions pass through and cover the exit sleeves 1 to 26. Ru.
部分１１１１＋され細く収束されたガスイオンは月利２
８十の特定領域においＣ偏向板２９に印加される走査信
号（３一応じで走査され、該領域はエツチングされ、清
浄な表面が１！７られる。次いで質量分離器２３におｌ
−Ｊる電場と磁場の強さは例えば硼素（Ｂ）イオンが分
離されて出射スリブｌ〜２６を通過するように変えられ
、細く収束されたＢイオンは偏向板２９に印加される信
号に応じ、月利２８十の清浄な面内の選（Ｒされた微細
領域に照射され、マスクレスのイオンと１人が行われる
。The gas ions narrowly focused by the part 1111+ have a monthly rate of 2
A scanning signal (31) is applied to the C deflection plate 29 in a specific area of 80, which area is etched and a clean surface is etched.
The strength of the electric field and magnetic field is changed so that, for example, boron (B) ions are separated and pass through the exit sleeve l~26, and the narrowly focused B ions respond to the signal applied to the deflection plate 29. , a clean in-plane selection (R) micro area with a monthly rate of 280 yen is irradiated, and maskless ion and one person are performed.
このように上述したイオンビーム装置においては、祠お
１２８を真空側に取出Ｊことなく、ガスイオンビームに
よるエツチング及び金属あるいは合金を構成する物質イ
オンビームによるイＡンン１人を行うことができ、材１
１の汚染は防ｌトでき、又作業を簡略化づ”ることがで
きる、。In this way, in the above-described ion beam apparatus, etching with a gas ion beam and etching of a material constituting a metal or alloy with an ion beam can be performed without taking out the etching chamber 128 to the vacuum side. Material 1
1. Contamination can be prevented and the work can be simplified.
以十詳述した如く本発明はガスイオンビーム。As described in detail above, the present invention relates to a gas ion beam.
８−
金属あるい【よ合金イオンじ−ムどちに１−分に細く収
束づることができると」ζに、でれらのじ−７１の輝度
も高くすることができ、史には金属あるいは合金及びガ
スの両イオンを同１、旨こ発Ｌ１−さ口ることができる
。尚、本発明は上述した実施例に限定されず幾多の疫形
がｎＪ能である。例えば、イオン（・Ｆどして白金と硼
素どの共晶合金とアルゴンを用いＩＣが、ヒシウム、ガ
リウム等の仝属ル）るいは金属化合物、他の合金および
窒素あるいは酸素等のガスを用いても良い３．又液状の
物質を加熱するようにしたが、この加熱は本発明にとっ
て必須の要件Ｃはない。更にリリ９−バどしで容器状の
ものを用いず、例えば、１１状部材の一部をコイル状に
巻回し、該−］イル部分をり＋１−バ部として金属等を
保持Ｊるようにしても良い。8- If metal or alloy ion beams can be narrowly converged to 1-minute, the brightness of the metal or alloy can be increased. Alternatively, both the ions of the alloy and the gas can be emitted at the same time. It should be noted that the present invention is not limited to the above-mentioned embodiments, and many epilepsy forms are possible. For example, an IC using ions (F, eutectic alloys such as platinum and boron, and argon), metal compounds such as hiscium, gallium, etc., or metal compounds, other alloys, and gases such as nitrogen or oxygen is used. Good 3. Furthermore, although the liquid substance is heated, this heating is not essential requirement C for the present invention. Furthermore, instead of using a container-like object, for example, a part of the 11-shaped member is wound into a coil shape using a lily bar, and the metal part is used as a lily bar part to hold metal, etc. You can also do it.
第１図は本発明の一実施例Ｃあるイオンじ一部、発牛装
買を示Ｊ図、第２図し１第１図の装置醒に用いたｉＩ針
状部材ん端部を示φ図、第３図１．１第１図のイオンビ
発生発生装買を使用しｌこイＡンピ−１Ｘ８ξ胃を示す
図である。
１：す１ｆ−ハ、２：■ｌ孔、３：ｌ−ｒ’、、／′ｌ
：１：１状部祠、１）：引き出し電極、６ ： １１１
１熱ヒータ、７：−イΔンメン、８：支持部４Ａ、９：
支（１，１０：冷ＪＪ１層、１１：冷媒、１２：万ス導
入管、１３：弁、１４：万スボンｌ＼、１ｊう：陰極。
特許出願人
１］木電子株式会ト１
代表省 加勢 忠月１
１１−
芝 同
１８６−
ワFig. 1 shows a part of an ion part and a feeding device according to an embodiment of the present invention. FIG. 3 is a diagram illustrating a 1.times.8.times.8 stomach using the ion beam generator device of FIG. 1. 1: 1f-c, 2: ■l hole, 3: l-r', /'l
: 1: 1-shaped part shrine, 1): Extraction electrode, 6: 111
1 Heater, 7: -∆Amen, 8: Support part 4A, 9:
Support (1, 10: cold JJ 1 layer, 11: refrigerant, 12: 10,000 s introductory tube, 13: valve, 14: 1,000 sq. Kase Tadatsuki 1 11- Shiba Same 186- Wa
Claims (1)
バ部から液状物質が供給される針状先端部を有した針状
部材と、該針状先端部に強電界を形成するだめの手段と
、該針状先端部近傍にイ２ン化すべきガスを供給するた
めの１手段とより成るイオンビーム発生装置。a reservoir portion for storing a substance to be ionized; a needle-like member having a needle-like tip portion to which the liquid substance is supplied from the reservoir portion; a means for forming a strong electric field in the needle-like tip portion; An ion beam generator comprising a means for supplying a gas to be ionized to the vicinity of a needle tip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57025488A JPS58142738A (en) | 1982-02-19 | 1982-02-19 | Ion beam generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57025488A JPS58142738A (en) | 1982-02-19 | 1982-02-19 | Ion beam generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58142738A true JPS58142738A (en) | 1983-08-24 |
Family
ID=12167437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57025488A Pending JPS58142738A (en) | 1982-02-19 | 1982-02-19 | Ion beam generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58142738A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5034612A (en) * | 1989-05-26 | 1991-07-23 | Micrion Corporation | Ion source method and apparatus |
| WO2013043794A3 (en) * | 2011-09-22 | 2013-08-01 | Carl Zeiss Nts, Llc | Liquid metal ion source, system and method |
| US9218935B2 (en) | 2013-07-08 | 2015-12-22 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
-
1982
- 1982-02-19 JP JP57025488A patent/JPS58142738A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5034612A (en) * | 1989-05-26 | 1991-07-23 | Micrion Corporation | Ion source method and apparatus |
| WO2013043794A3 (en) * | 2011-09-22 | 2013-08-01 | Carl Zeiss Nts, Llc | Liquid metal ion source, system and method |
| US9218935B2 (en) | 2013-07-08 | 2015-12-22 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9218934B2 (en) | 2013-07-08 | 2015-12-22 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9530612B2 (en) | 2013-07-08 | 2016-12-27 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9530611B2 (en) | 2013-07-08 | 2016-12-27 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9536699B2 (en) | 2013-07-08 | 2017-01-03 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9627172B2 (en) | 2013-07-08 | 2017-04-18 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
| US9640364B2 (en) | 2013-07-08 | 2017-05-02 | Carl Zeiss Microscopy, Llc | Charged particle beam system and method of operating a charged particle beam system |
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