JPS58142505A - Overload fusion resistor - Google Patents

Overload fusion resistor

Info

Publication number
JPS58142505A
JPS58142505A JP2550582A JP2550582A JPS58142505A JP S58142505 A JPS58142505 A JP S58142505A JP 2550582 A JP2550582 A JP 2550582A JP 2550582 A JP2550582 A JP 2550582A JP S58142505 A JPS58142505 A JP S58142505A
Authority
JP
Japan
Prior art keywords
film
overload
resistor
insulating
fusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2550582A
Other languages
Japanese (ja)
Inventor
細川 善右エ門
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2550582A priority Critical patent/JPS58142505A/en
Publication of JPS58142505A publication Critical patent/JPS58142505A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は過電流が流れた時に抵抗皮膜自体の発熱によシ
溶断する過負荷5ill形抵抗−に関し、その目的とす
るところは異常時における応答性がよく、正確かつ迅速
Kil断が行われ、溶断後の耐電圧も大きい%0を提供
する仁とにある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an overload 5ill type resistor that melts due to the heat generated in the resistive film itself when an overcurrent flows, and its purpose is to provide a high-response, accurate and It has a property that provides rapid melt cutting and a high withstand voltage after fusing.

最近では、装置の小形化、低電力化の傾向にあり、それ
に伴って過負荷溶断形抵抗器としては、異常時における
印加電力が定格電力に対して低倍率であっても電流連断
することが要求されている。また−低抵抗領域では電流
ヒユーズの代用としての要求も増えつつある。
Recently, there has been a trend toward smaller devices and lower power consumption, and with this trend, overload fusing type resistors have the ability to disconnect current even if the applied power is a low multiple of the rated power in the event of an abnormality. is required. Additionally, in the low resistance region, there is an increasing demand for a substitute for current fuses.

従来、この種の過負荷溶新形抵抗器は・■ 金属皮膜、
金属酸化物皮膜あるいはカーボン皮膜等の一般抵抗皮膜
上に、低融点ガラスペーストを塗布したtの。
Conventionally, this type of overload welding type resistor had a metal film,
A low melting point glass paste is applied onto a general resistance film such as a metal oxide film or carbon film.

■ 抵抗皮膜とそれを支持あるいは保護している材料と
の熱膨張係数の差を利用したtの。
■ t that takes advantage of the difference in thermal expansion coefficient between the resistive film and the material that supports or protects it.

■ 部分的に電流通路を狭くして、熱集中化を起こし溶
断させるもの。
■ Items that partially narrow the current path, causing heat concentration and melting.

■ 溶断形抵抗皮膜を使用するもの。■ Those that use a fusing type resistance film.

等があるが、従来のtのは定格電力の4〜5倍の低倍率
で溶断させることは困難である。
However, it is difficult to fuse the conventional T type at a low magnification of 4 to 5 times the rated power.

そこで本発明は、絶縁基体の表面に溶融温度31110
υ以下の導電性金属皮膜または合金皮膜を形成して抵抗
素体を檎成し、この抵抗素体O#に記皮膜外側を、フラ
ックス材料を含有した絶縁材で被覆し、フラックス材料
の熱軟化によって前記皮膜の溶融を促進して応答性と溶
断後の耐電圧を改善したものであって、以下本発明の実
施例を第1図〜第3図に基づいて説明する。
Therefore, the present invention provides a melting temperature of 31110°C on the surface of an insulating substrate.
A resistive element is formed by forming a conductive metal film or alloy film with a thickness of υ or less, and the outside of the film is coated on the resistive element O# with an insulating material containing a flux material, and the flux material is thermally softened. This method promotes melting of the film to improve responsiveness and withstand voltage after fusing.Examples of the present invention will be described below with reference to FIGS. 1 to 3.

第1図は過負荷溶断形抵抗器を示す、(l)は抵抗素体
で、セラζツタ碍子、プラスチックなどの絶縁基体の表
面に溶融温度SSO℃以下の低融点導電性金属皮膜また
紘低融点導電性合金皮膜が形成されている。(2)は抵
抗素体(1) C) l! 1lli K入れられ九抵
抗値修正用の溝切部で、前記低融点導電性金属皮膜また
は低融点導電性合金皮膜の形成後に必要に応じて刻設さ
れる。(2)は絶縁素体の両端に装着され九キャップ%
(4)はキャップ0) K *続され九リード線である
。(旬は抵抗素体(1)の鍵記皮膜外伺をコーティング
する絶縁材としての絶縁塗料で、フラックス材料を含有
している。
Figure 1 shows an overload fusing type resistor. (l) is the resistor element, and the surface of the insulating substrate such as ceramic insulator or plastic is coated with a low melting point conductive metal film with a melting temperature of SSO°C or less, or A melting point conductive alloy film is formed. (2) is the resistive element (1) C) l! This is a groove cut portion for modifying the resistance value, which is cut into the groove portion as required after the formation of the low melting point conductive metal film or the low melting point conductive alloy film. (2) is attached to both ends of the insulating element and has a cap of 9%.
(4) is a cap 0) K * connected with 9 lead wires. (Shun is an insulating paint used as an insulating material to coat the outer surface of the key film of the resistor element (1), and contains a flux material.

なお、前記皮膜としては例えば錫、鉛、ビスマス、カド
ミウム、インジエーム、ならびに上記錫。
In addition, examples of the film include tin, lead, bismuth, cadmium, indieme, and the above-mentioned tin.

鉛、ビスマス、カドζウム、インジエームさらに銀、銅
、亜鉛、アルζニウムなどの中の2種以上の合金が用い
られ、前記抵抗基体の表面には無電解鍍金、電解鍍金、
真g蒸着、スパッタリング等の方法で形成される。また
、各種組成の同時析出による方法で%、2種以上の金属
の多層形成な行つた後、その金属の融点以下の温度で熱
処理して合金化しても目的の合金皮膜が得られる。更K
An alloy of two or more of lead, bismuth, cadmium, indium, silver, copper, zinc, aluminum, etc. is used, and the surface of the resistive substrate is plated with electroless plating, electrolytic plating,
It is formed by a method such as silver evaporation or sputtering. The desired alloy film can also be obtained by forming a multilayer of two or more metals by simultaneous precipitation of various compositions, and then heat-treating and alloying at a temperature below the melting point of the metal. Sara K
.

前記フラックスとしては、例えばロジン、変性ロジン系
、およびこれらの変成品等であって、絶縁塗料(5)は
これをシリコーンセメント等の絶縁被覆材中に含有させ
である。
Examples of the flux include rosin, modified rosin, and modified products thereof, and the insulating paint (5) is obtained by incorporating this into an insulating coating material such as silicone cement.

このように構成したため、浴融機構は次のようになる。With this configuration, the bath melting mechanism is as follows.

すなわち、低融点の導電性金属皮膜または低融点導電性
合金皮膜の表面温度が過負荷時の発熱でその融点に達す
ると、導電性皮膜が溶融する。これと同時に導電性皮膜
の表面を被覆している絶縁塗料(5)中に含まれている
フラックス材料カ熱軟化するため、粘度低下およびフラ
ックス作用が相俟って溶融し九前記導電性皮膜は、表面
張力によシ球状化して溶断が速やかに達成される。jI
3図はこのように構成され4t/zWlΩのsm特性で
ある。
That is, when the surface temperature of the low melting point conductive metal film or low melting point conductive alloy film reaches its melting point due to heat generation during overload, the conductive film melts. At the same time, the flux material contained in the insulating paint (5) covering the surface of the conductive film is softened by heat, so the viscosity decreases and the flux action combine to cause the conductive film to melt. The surface tension causes the material to become spheroidized, and fusing is quickly achieved. jI
FIG. 3 shows the sm characteristic of 4t/zWlΩ constructed in this way.

上記実施例は塗装タイプを例に挙げて説明し九が、これ
は第2図のような形状のものにも適用できる。(6)は
上面が開口した絶縁ケースとしてのセラミックケースで
、前記抵抗素体(1)がこのセラミックケース(6)内
Krjii設される。(5)am抗11E体(1)トセ
ラζツクケース−)との関に充填される絶縁性充填剤で
、第111i1の絶縁塗料(旬と同様に7ラツクス材料
がシリコーンセメント等の中に含有されている。
Although the above embodiment has been explained using a painted type as an example, it can also be applied to a type having a shape as shown in FIG. (6) is a ceramic case serving as an insulating case with an open top surface, and the resistor element (1) is disposed inside this ceramic case (6). (5) An insulating filler that is filled in the area between the am resistor 11E body (1) Tosera ζ case -) and the 111i1 insulating paint (7 lux material is contained in silicone cement etc. as in the case). ing.

以上説明のように本発明の過負荷溶断形抵抗器によると
、電子機器の異常時における応答性がよく、溶断が正確
かつ迅速に行われ、溶断後の耐電圧も大きく、電子機器
の***品としての利用価値が高いものである。また淀
常状態における諸物件においても規格値を充分満足しう
る−のとなる。
As explained above, the overload fusing type resistor of the present invention has good responsiveness in the event of an abnormality in electronic equipment, fusing is performed accurately and quickly, has a high withstand voltage after fusing, and is a safety component for electronic equipment. It has high utility value. In addition, the standard values can be fully satisfied even in various objects in a stagnant state.

しが−も従来の固定抵抗器の製造工程をそのit活用し
て生産できる丸め、廉価に供給できるものである。
However, it can also be produced by utilizing the IT manufacturing process of conventional fixed resistors, and can be supplied at low cost.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の過負荷嬉断形抵抗協の一実施例の構成
図、第2図は他の実施例の構成図、第3図は本発明によ
る溶断特性図である。 (1)・・・抵抗素体、す)・・・溝切部、(a)・・
・キャップ、(4)・・・リード線、(5)・・・絶縁
塗料、(5)・・・絶縁性充填剤、(6)・・・セラミ
ックケース 代理人 森本義弘 第1図 第2図 第3図 電路電力の羞牟
FIG. 1 is a block diagram of one embodiment of an overload rupture type resistor according to the present invention, FIG. 2 is a block diagram of another embodiment, and FIG. 3 is a diagram of fusing characteristics according to the present invention. (1)...Resistor element, (a)...Groove section, (a)...
・Cap, (4)... Lead wire, (5)... Insulating paint, (5)... Insulating filler, (6)... Ceramic case agent Yoshihiro Morimoto Figure 1 Figure 2 Figure 3: Disappointment of electrical circuit power

Claims (1)

【特許請求の範囲】 1、絶縁基体の1!*に#l融温度s s o t) 
以下(1) 導電性金属皮j[を九は合金皮膜を形成し
て抵抗素体を構成し、この抵抗素体の前記皮膜外側を。 フラックス材料を含有した絶縁材で被覆し九過負荷溶断
形抵抗器。
[Claims] 1. 1 of the insulating base! * to #l melting temperature s s o t)
Hereinafter, (1) a conductive metal film is formed with an alloy film to constitute a resistor element, and the outer side of the film of the resistor element is. Nine overload fusing type resistors coated with insulating material containing flux material.
JP2550582A 1982-02-18 1982-02-18 Overload fusion resistor Pending JPS58142505A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2550582A JPS58142505A (en) 1982-02-18 1982-02-18 Overload fusion resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2550582A JPS58142505A (en) 1982-02-18 1982-02-18 Overload fusion resistor

Publications (1)

Publication Number Publication Date
JPS58142505A true JPS58142505A (en) 1983-08-24

Family

ID=12167919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2550582A Pending JPS58142505A (en) 1982-02-18 1982-02-18 Overload fusion resistor

Country Status (1)

Country Link
JP (1) JPS58142505A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6448003U (en) * 1987-09-21 1989-03-24
JPH02120802U (en) * 1989-03-15 1990-09-28
JPH02305410A (en) * 1989-05-19 1990-12-19 Matsushita Electric Ind Co Ltd Chip resistor
JP2009216300A (en) * 2008-03-10 2009-09-24 Pan Pacific Copper Co Ltd Uptake section water-cooling jacket taking-out device for flash smelting furnace

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50144067A (en) * 1974-05-09 1975-11-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50144067A (en) * 1974-05-09 1975-11-19

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6448003U (en) * 1987-09-21 1989-03-24
JPH02120802U (en) * 1989-03-15 1990-09-28
JPH02305410A (en) * 1989-05-19 1990-12-19 Matsushita Electric Ind Co Ltd Chip resistor
JP2009216300A (en) * 2008-03-10 2009-09-24 Pan Pacific Copper Co Ltd Uptake section water-cooling jacket taking-out device for flash smelting furnace

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