JPS5814140A - Electrophotographic receptor - Google Patents
Electrophotographic receptorInfo
- Publication number
- JPS5814140A JPS5814140A JP11272881A JP11272881A JPS5814140A JP S5814140 A JPS5814140 A JP S5814140A JP 11272881 A JP11272881 A JP 11272881A JP 11272881 A JP11272881 A JP 11272881A JP S5814140 A JPS5814140 A JP S5814140A
- Authority
- JP
- Japan
- Prior art keywords
- support
- layer
- amorphous silicon
- photoreceptor
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/142—Inert intermediate layers
- G03G5/144—Inert intermediate layers comprising inorganic material
Abstract
Description
【発明の詳細な説明】
本発明は、アモルファスシリコンにて形成さ扛た電子写
真感光体の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in an electrophotographic photoreceptor made of amorphous silicon.
従来より、電子写真複写機の感光体としてはＧｏ、Ｏｄ
ｅ、 ＺｎＯなどの無機元導電拐料や、ボＩＪ −Ｎビ
ニルカルバゾール（ＰＶＫ）、）リニトロフルオレイン
（’ｒＮｙ）などの有機光導電材料が使用されていた◎
しかしながら、こ几らの拐科は夫々次のような欠点を有
していた。即ち、Ｂｅｆｌ耐熱性に乏しく毒性があるこ
と、ＣｄＳ は公害物質であること、ＺｎＯは寿命が短
いこと、またＰＶＫやＴ Ｎ Ｆにつし感度が低Ａこと
などである。Conventionally, Go and Od have been used as photoreceptors for electrophotographic copying machines.
e, inorganic conductive materials such as ZnO, and organic photoconductive materials such as vinyl carbazole (PVK) and linitrofluorein ('rNy) were used. Each family had the following drawbacks. That is, Befl has poor heat resistance and is toxic, CdS is a pollutant, ZnO has a short life, and sensitivity is low A compared to PVK and TN F.
そこで、これらの欠点を解決する感光体の材料として、
アモルファスシリコン（以下％ａ −Ｓ ｉと略称する
）が最近注目をあびている。このａ−８１μ、面］久性
、耐熱性に優れ、無毒でしかも高感度であり、前記従来
例の欠点を全て解決すると込う、いいことずくめの材料
である◎
しかしこのａ −Ｓ ｉについても、なお次のような欠
点がある。ａ−Ｓ、を被膜を支持体表面に形成させるに
は、真空容器内に支持体とＳｉＨ４ガスを封入し、グロ
ー放電させる方法により行う。し刀為し、このグロー放
電法により生成したａ −Ｓ ｉ被膜の暗抵抗は、１０
０１程度と低く、従来の電子写真複写機ＶＣは使用でき
なかった。この事情を更に詳述すると、電子写真複写機
において、静電潜像を得るためＶＣは−先ず、感光体表
面ケコロナ放電により一様に帯電をぜ、次１’（帯電さ
几た表面を選択的に露光し、感光体内部にキャリアを生
成する。このキャリアＶＣ，ｌ：り表面電荷が中和され
るので、感光体のｍ光ざ′ｔ′Ｌ友部分の電荷は消失し
、非露光部分にのみ電荷が残る。この残留電荷により形
成さｒｔたものが静電潜像である・感光体の特性として
要求されることは、表面電荷？保持する能力、および露
光によりキャリアを生成する能力である。そしてこの電
荷保持力に普通暗抵抗に比例する。暗抵抗が低いと、導
電性支持体から注入されるキャリアにより、露光さ几な
くとも表面電荷が中和さ几る。従って静電潜像の電位は
低くなり。Therefore, as a photoreceptor material that solves these drawbacks,
Amorphous silicon (hereinafter abbreviated as %a-Si) has recently been attracting attention. This a-81μ, surface] has excellent durability and heat resistance, is non-toxic, and has high sensitivity, and is a material full of good things that solves all the drawbacks of the conventional examples.◎ However, regarding this a-S i However, it still has the following drawbacks. In order to form a film of a-S on the surface of the support, the support and SiH4 gas are sealed in a vacuum container and glow discharge is performed. However, the dark resistance of the a-Si film produced by this glow discharge method was 10
01, which made it impossible to use the conventional electrophotographic copying machine VC. To explain this situation in more detail, in an electrophotographic copying machine, in order to obtain an electrostatic latent image, the VC first uniformly charges the surface of the photoreceptor by corona discharge, and then 1' (selects the charged surface). The surface charge of this carrier VC,l is neutralized, so the charge on the part of the photoreceptor near the light beam disappears, and the non-exposed A charge remains only in that part.The image formed by this residual charge is an electrostatic latent image.Required characteristics of a photoreceptor are the ability to retain surface charge and the ability to generate carriers upon exposure. This charge retention force is normally proportional to the dark resistance.When the dark resistance is low, the surface charge is neutralized by the carriers injected from the conductive support even when exposed to light.Therefore, the electrostatic charge The potential of the latent image becomes lower.
現像した際にコントラストが悪くなる。一方、ａ−Ｓ
ｉ被膜の暗抵抗を高くして、電荷保持力を向上さぜるＩ
ｃは、ａ−８ｉ被膜の製造条件を厳密に制御する必要が
あ９％製造することが難かしく実用的でなかった〇
本発明は、このａ−８１被膜の暗抵抗ケ高くするよりも
、むしろ導電性支持体から注入さ几るキャリアの量を制
限し一暗抵抗？高くするのと同様の効果ヲ得ようとする
ものである・
以下、本発明の実施ｆｉＩＶＣつき図面に従がい説明す
る。第１図は感光体の一部を示す断面図で、（１）はア
ルミニウム製の支持体、 １２１ｉこの支持体（１）の
上面に形成ζｎた、絶縁性の酸化下ルミニウム被膜層で
ある。（３）ぼ前記酸化アルミニウム被ｐｊＸ層（２）
の上面にコーティングさ几たａ −Ｓ ｉ層である。Contrast deteriorates when developed. On the other hand, a-S
i Increasing the dark resistance of the film and improving its charge retention abilityI
c requires strict control of the manufacturing conditions of the a-8i film, making it difficult and impractical to manufacture by 9%.The present invention aims to improve the dark resistance of the a-81 film by increasing the dark resistance of the a-81 film. Rather limit the amount of carriers injected from the conductive support and resist the dark? The purpose is to obtain the same effect as increasing the height of the vehicle.Hereinafter, the implementation of the present invention will be explained with reference to the drawings with IVC. FIG. 1 is a cross-sectional view showing a part of the photoreceptor, in which (1) is an aluminum support; 121i is an insulating aluminum oxide coating layer formed on the upper surface of this support (1); (3) Aluminum oxide covered pjX layer (2)
The a-Si layer is coated on the top surface of the a-Si layer.
第２図ａ１本発明の他の実施例の一部を示す断面図で、
酸化アルミニウム被膜層（２１の上面がプラズマエツチ
ングさｎ、粗面化ζ′ｎｋものである。FIG. 2 a1 is a sectional view showing a part of another embodiment of the present invention,
The upper surface of the aluminum oxide coating layer (21) is plasma etched and roughened.
こうすることにより、ａ−８ｉ層（３）げ、酸化アルミ
ニウム被膜層（２１よシ答易に剥離ゼず、長寿命化が図
ｎる。By doing so, the a-8i layer (3) and the aluminum oxide coating layer (21) do not easily peel off, resulting in a longer life.
斜上のように、導電性支持体の表面に、前記支持体の絶
縁性酸化被膜が形成さ几ているので、支持体からキャリ
アが注入されることが制限さ几。As shown above, since the insulating oxide film of the conductive support is formed on the surface of the conductive support, injection of carrier from the support is restricted.
暗抵抗をあまり冒〈シなくとも、充分な電荷保持力を有
する。It has sufficient charge retention ability without affecting the dark resistance too much.
なお、前記酸化被膜層があ−まり厚いと、こんどは露光
された際にも、電荷が逃げられないことになる。従って
、その厚さは数ミクロン以下であることが望ましい。Note that if the oxide film layer is too thick, charges will not be able to escape even when exposed to light. Therefore, it is desirable that the thickness be several microns or less.
このように本発明によると、感光体として優秀な性質ケ
有するａ −Ｓ ｉにて、容易に電子写真複写機の感光
体を実現することができる。As described above, according to the present invention, a photoreceptor for an electrophotographic copying machine can be easily realized using a-Si, which has excellent properties as a photoreceptor.
第１図および第２図は夫々本発明の相異なる実施例を示
す断面図である。
＋１１・・・支持体、（２）・・・酸化アルミニウム被
膜層、（３）・・・アモルファスシリコン層。
第１図
第２図1 and 2 are cross-sectional views showing different embodiments of the present invention. +11...Support, (2)...Aluminum oxide coating layer, (3)...Amorphous silicon layer. Figure 1 Figure 2
Claims (1)
が社覆さ′ｎた電子写真感光体において。 前記支持体の表面とアモルファスシリコン層との間に、
支持体の絶縁性酸化被膜層が形成されていることを特徴
とする電子写真感光体。 ２、支持体がアルミニウムで、酸化被膜が酸化アルミニ
ウムである特許請求の範囲第１項記載の電子写Ｊ（感光
体・ ６−酸化被膜層の表面が、プラズマエツチングさｎｙｃ
ものである特許請求の範囲第１項若しくげ第２項記載の
電子写真感光体。[Claims] 1. An electrophotographic photoreceptor in which the surface of a conductive gold support member is coated with amorphous silicon. between the surface of the support and the amorphous silicon layer,
An electrophotographic photoreceptor characterized in that a support is formed with an insulating oxide film layer. 2. Electrophotography J according to claim 1, wherein the support is aluminum and the oxide film is aluminum oxide (the surface of the photoreceptor/6-oxide film layer is plasma etched).
An electrophotographic photoreceptor according to claim 1 or claim 2, which is an electrophotographic photoreceptor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11272881A JPS5814140A (en) | 1981-07-17 | 1981-07-17 | Electrophotographic receptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11272881A JPS5814140A (en) | 1981-07-17 | 1981-07-17 | Electrophotographic receptor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5814140A true JPS5814140A (en) | 1983-01-26 |
Family
ID=14594047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11272881A Pending JPS5814140A (en) | 1981-07-17 | 1981-07-17 | Electrophotographic receptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814140A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55127561A (en) * | 1979-03-26 | 1980-10-02 | Canon Inc | Image forming member for electrophotography |
-
1981
- 1981-07-17 JP JP11272881A patent/JPS5814140A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55127561A (en) * | 1979-03-26 | 1980-10-02 | Canon Inc | Image forming member for electrophotography |
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