JPS5812246A - Electrostatic deflection type camera tube and its production method - Google Patents

Electrostatic deflection type camera tube and its production method

Info

Publication number
JPS5812246A
JPS5812246A JP10935481A JP10935481A JPS5812246A JP S5812246 A JPS5812246 A JP S5812246A JP 10935481 A JP10935481 A JP 10935481A JP 10935481 A JP10935481 A JP 10935481A JP S5812246 A JPS5812246 A JP S5812246A
Authority
JP
Japan
Prior art keywords
electrode
mesh
pulp
electrostatic deflection
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10935481A
Other languages
Japanese (ja)
Inventor
Akio Maruyama
丸山 章男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10935481A priority Critical patent/JPS5812246A/en
Publication of JPS5812246A publication Critical patent/JPS5812246A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/14Manufacture of electrodes or electrode systems of non-emitting electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

PURPOSE:To improve the mass productivity remarkably at a high yield by coating a transparent, conductive film forming solution on a conductive mesh electrode and a deflection electrode and by burning them to form electrodes. CONSTITUTION:A protective film 16 such as photo-resist is coated on the region other than the portion formed as a deflection electrode 15 and a conductive mesh electrode 10 of a glass bulb 3 provided with a through hole 9. A solution containing In2O3 as the main component is sprayed on the portion where the deflection electrode 15 and the conductie mesh electrode 10 are formed, and after a transparent conductive film is formed, said protective film 16 is burnt at a predetermined temperature and is baked out so as to form the conductie mesh electrode 10 and the deflection electrode 15 made of a transparent conductive film. Thereby, the mass productivity can be remarkably improved at a high hield.

Description

【発明の詳細な説明】 本発明は静電偏向形撮像管およびその製造方法、41に
メツシュ電極に所定電圧を印加させるメッシ息導通1電
極と静電偏向用電極O構造およびその製造方法に関する
奄のであ為。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrostatic deflection type image pickup tube, a method of manufacturing the same, a mesh conduction electrode 41 for applying a predetermined voltage to the mesh electrode, a structure of the electrostatic deflection electrode O, and a method of manufacturing the same. Because of that.

一般に静電偏向用電極を真値してなhta像管の光導電
11に対向配置されるメツシュ電極に所定O電圧を印加
すゐメツ4シ具導通電極は、絶縁り71011面Kmま
えは銀ペーートを艙布し、制酸して形成されえものであ
夛、一方1.偏崗電極はバベブ内面にクロムsongを
蒸着法で形成し、このクロム薄膜をレーザ光で所定O形
状に加工して形成されている(4+1111昭52−4
311111参照)。
In general, a predetermined O voltage is applied to a mesh electrode placed opposite to the photoconductor 11 of the picture tube using the electrostatic deflection electrode at its true value. It can be formed by covering paste and antacid, while 1. The polarized electrode is formed by forming a chromium song on the inner surface of Babebu by vapor deposition, and processing this chromium thin film into a predetermined O shape using a laser beam (4+1111 1984-4).
311111).

しかしながら上記構成による曽電偏向形撮像管において
、上述した偏向電極O形成方法は、真空蒸着法およびレ
ーザ加工法を用いている丸め、極めて多大な製造時間を
賛すゐと岡lIK円筒ガラスパルプに微小、なりラック
が抜ずみという欠点があ2九、一方、lツシエ導通電極
は絶縁リングの内径を円筒ガラスパルプに対して大龜〈
できないため、メツシュ電極の組亭てが回部となる欠点
があった。
However, in the Soden deflection type image pickup tube having the above configuration, the above-mentioned method for forming the deflection electrode O requires an extremely long manufacturing time due to rounding using vacuum evaporation method and laser processing method. On the other hand, the l-shaped conductive electrode has the disadvantage that the inner diameter of the insulating ring is set against the cylindrical glass pulp.
Since this method cannot be used, there is a drawback that the mesh electrode assembly becomes a turning part.

したがって本発明は、上記従来O欠点を除去し、高歩留
りで量産性が高く、シかも高信頼性を有す為メツシュ導
通電極と偏向電極とを備ええ静電偏向形撮像管およびそ
の製造方法を提供することを目的としている。
Therefore, the present invention provides an electrostatic deflection type image pickup tube equipped with a mesh conduction electrode and a deflection electrode in order to eliminate the above-mentioned drawbacks of the conventional art, and to achieve high yield, high mass production, and high reliability. is intended to provide.

以下図面を用いて本発明の実施例を詳細に説明する。Embodiments of the present invention will be described in detail below with reference to the drawings.

tslallは本発明による静電偏向形撮倫管の一例を
示す置部拡大断面図である。同図において、1は透光性
ガラス円板からなる面板、2は面板1の内面11に被着
形成され走光電変換機能を有する光導電膜、3は透光性
ガラス円筒体からなるパルプ、4rilki板1とパル
プ3とO周端部を気密封止させかつ光導電1[2に所定
の電圧を印加するインジウム、Sはインジウムの外周面
に円積状に接触配置され走光導電tazo信号取シ出し
電極、6は面板1上の光導電11142に対向配置され
丸網状のメツシュ電極、1はメツシュ電極・の周端部を
保持する円−状のメツシュ電極保持体、$はメツシュ電
極保持体Tの周端1IIK例えばS*固定されかつメツ
シエ電Ik6をバルブSO内壁面に弾性力で支持され九
メツシュ電極支持体、−はメツシュ電極支持体$と接触
するパルプ1の一部に設けられた貫通囲の膜厚で被着形
成された透明導電WAlK、10b。
tslall is an enlarged sectional view of the bottom part showing an example of the electrostatic deflection type imaging tube according to the present invention. In the figure, 1 is a face plate made of a transparent glass disk, 2 is a photoconductive film formed on the inner surface 11 of the face plate 1 and has a phototactic electric conversion function, 3 is a pulp made of a transparent glass cylinder, 4 Rilki plate 1, pulp 3, and O circumferential edges are hermetically sealed and a predetermined voltage is applied to photoconductor 1 [2. A projecting electrode, 6 is a circular mesh electrode arranged opposite to the photoconductor 11142 on the face plate 1, 1 is a circular mesh electrode holder that holds the peripheral edge of the mesh electrode, $ is a mesh electrode holder The circumferential end 1IIK of T, for example, S* is fixed, and the mesh electrode Ik6 is supported by elastic force on the inner wall surface of the valve SO, and the - is provided on a part of the pulp 1 in contact with the mesh electrode support $. Transparent conductive WAIK, 10b, is formed to have a film thickness of the through-hole.

10−からなるメツシュ導通電極、11は貫通孔−を封
止する低融点ガラス、11はパルプ8の外壁面上K11
着形成し九透明導電1[10e上に固着配置された導電
性接着剤、1sは導電性接着剤12内に濶設配置され九
電源供給用端子、14はパルプ3の外壁面に巻設された
電源供給用端子13をパルプ3上に固定させる固定用接
着剤、15はパル透明導電膜からなる偏向電極であシ、
この偏向電極11および上記導通電極10を構成する透
明導電1[10m、10b、10@はIambsを、v
ス/f用い友蒸着法、スパッタリング法もしくは噴11
i(スプレー)塗布法などの被着手段により形成されて
いる。
10 is a mesh conduction electrode, 11 is a low melting point glass that seals the through hole, and 11 is K11 on the outer wall surface of the pulp 8.
A conductive adhesive is formed and fixedly placed on the nine transparent conductive materials 10e, 1s is a power supply terminal disposed within the conductive adhesive 12, and 14 is wound on the outer wall surface of the pulp 3. a fixing adhesive for fixing the power supply terminal 13 on the pulp 3; 15 is a deflection electrode made of a Pal transparent conductive film;
The transparent conductor 1 [10m, 10b, 10@ is Iambs, v
evaporation method, sputtering method or spraying method using
It is formed by an application method such as i (spray) coating method.

このように構成された静電偏向形撮儂管において、メツ
シュ電極・への電源供給手段を、メツシュ電極@O外鴎
端に設けられた弾性を有するメツシュ電極支持体畠と、
パルプ3に貫通孔−を設けてパル180貫通孔■内壁面
から外壁面にわたって形成され九透明導電膜10m、1
0に、10・からなるメツシュ導通電極10と、パルプ
3外壁面の透明導電@to@上に設けられた導電性接着
剤12と、この導電性接着剤12内Km設された電源供
給端子1sとで構成したことによって、メツシュ導通電
極10がパルプ3の内壁面から外壁面に向って透明導電
膜10a、10b、10・で極めて容易に形成できるの
で、メツシュ電極6の支持構造が簡素化され、組立てが
極めて容易となる。す表わち、従来の電子銃構体最終端
電極に支持固定される煩雑な支持構造およびステムピン
からの給電構造が全く不豪となるので、構造が簡素化さ
れ、したがって組立も極めて容易となる。また、ノ(ル
ブ3の内壁−に透明導電膜て偏向電極1st形成し九こ
とKよって、パルプ3が半透明状態となるOで、I<ル
プ3の外壁面から光導電膜1ヘノ(イアスライドを有効
に導入することが可能となる。
In the electrostatic deflection type camera tube configured in this manner, the means for supplying power to the mesh electrode is provided by a mesh electrode support base having elasticity provided at the outer end of the mesh electrode @O;
A through hole is provided in the pulp 3, and a transparent conductive film 10 m, 1 is formed from the inner wall surface to the outer wall surface.
A mesh conductive electrode 10 consisting of 0 and 10, a conductive adhesive 12 provided on the transparent conductive @to@ of the outer wall surface of the pulp 3, and a power supply terminal 1s provided Km inside the conductive adhesive 12. With this configuration, the mesh conductive electrode 10 can be formed extremely easily from the transparent conductive films 10a, 10b, 10. from the inner wall surface to the outer wall surface of the pulp 3, so that the supporting structure of the mesh electrode 6 is simplified. , assembly is extremely easy. In other words, the complicated support structure supported and fixed to the final end electrode of the conventional electron gun assembly and the power supply structure from the stem pin are completely inconvenient, so the structure is simplified and assembly is therefore extremely easy. In addition, the first deflection electrode is formed using a transparent conductive film on the inner wall of the pulp 3, and the pulp 3 becomes semi-transparent at an angle of I<I. It becomes possible to introduce slides effectively.

次に、パルプ3にメツシュ導通電極10および偏向電極
1sを形成する方法について菖2図ないし第4図に示す
要部断面図を用いて説明する。壇ず第2図において、ガ
ラスバルブ3に貫通孔−ヲ設けたガラスパルプ3の偏向
電極1s、メツシュ導通電極10を形成する部分以外の
領域にホトレジストなどの保−1alaを塗り付は法で
塗布する。
Next, a method for forming the mesh conduction electrode 10 and the deflection electrode 1s on the pulp 3 will be explained using the main part sectional views shown in Figs. 2 to 4. First, in FIG. 2, a photoresist or other adhesive 1ala is applied by a method to the area other than the deflection electrode 1s of the glass pulp 3 provided with the through hole in the glass bulb 3 and the area where the mesh conduction electrode 10 will be formed. do.

そして引き続き上記偏向電極1S、メツシュ導通電ml
Oを形成する部分K1n1olを主成分とした#111
を噴霧法で塗布し、透明導電膜を形成した撮、所定温度
で鉤成し、上記保ftl[1・をベータアウトすること
Kよって、第350に示したように711判導電膜から
なるメツシュ導通電極1(1,偏向電極1sが形成され
る0次に第4図に示し良ように貫通孔−に低融点ガラス
ペーストを充填し、所定温度で焼成して低融点ガラス1
1とし、〕(ルプ3の内面壁と外面−関を気密封止して
)(ルブ3を完成させる。
Then, the deflection electrode 1S, mesh conduction ml
#111 whose main component is the part K1n1ol that forms O
A transparent conductive film is formed by coating the transparent conductive film by a spraying method, and then it is cured at a predetermined temperature to beta-out the above-mentioned protective ftl[1. As shown in FIG. 4, the conductive electrode 1 (1, where the deflection electrode 1s is formed) is filled with a low melting point glass paste into the through hole and baked at a predetermined temperature to form the low melting point glass 1.
1, and then airtightly seal the inner wall and outer surface of the loop 3 to complete the loop 3.

この場合、上記パルプの完成KFi下記に示す材料およ
び製作条件を用いて行なう。すなわち(1)透明導電膜
形成溶液 (う 成分鉤 硝酸インジウム・ 3水和物   7゜25ジメチル錫
オキサイド     α61)t シトラコン酸          1.06エタノール
          8615エチレングリコール  
    4.53硝酸      0.51 ←)塗布 噴S(スプレー法) (2)  透明導電膜の焼成 0)乾燥 UV照射乾燥〔メタルハイトランプ使用。
In this case, the completed KFi of the above-mentioned pulp is carried out using the materials and production conditions shown below. That is, (1) transparent conductive film forming solution (components: indium chlorine nitrate trihydrate 7゜25 dimethyltin oxide α61) t citraconic acid 1.06 ethanol 8615 ethylene glycol
4.53 Nitric acid 0.51 ←) Coating spray S (spray method) (2) Baking of transparent conductive film 0) Drying UV irradiation drying [using metal height lamp.

照射距離:約13.8cm(230wsW/cd 、 
365am 、) 、照射時間:約5分〕 幹)焼成 空気中で約5oot  で約1時間(昇温速度:約り5
℃/mla以上) (3)保護層 ((イ)ホトレジス)OMI−11(東京応化麹)(4
)低融点ガラス (イ)成分(重量−) PbOニアB、0.ilmos:IQ、9.znO:2
g。
Irradiation distance: Approximately 13.8cm (230wsW/cd,
365 am, ), irradiation time: approx. 5 minutes] firing time: approx.
℃/mla or higher) (3) Protective layer ((a) Photoresist) OMI-11 (Tokyo Ohka Koji) (4
) Low melting point glass (a) Component (weight -) PbOnia B, 0. ilmos:IQ, 9. znO:2
g.

IjlOs:2.1.Al5Os:1.8.CuO:2
.0゜11雪Om :2−5 ←)焼成 空気中で約450℃て約80分 子→特性 **係赦:1G6xlO−’ 軟化点:約5ssc (5)パルプ げ) 成分(重量5) 810!:5g〜57.ムj麿0”:1G−20゜Pb
O:2G〜31BNa*O:4−0〜&I$KsO:6
1$=7.5 (ロ)特性 熱膨張係数:94X1G−’ 軟化点:約625℃ このような電極形成方法によれば、パルプ3に微小クラ
ックの発生が全くなぐ、製造時間が大幅KIjIi縮で
き、さらに気密封止部(封止面積)が小さくなるため、
気密封止が極めて良好となる。さらには、製造装置が簡
略化でき、公害の点からも安全性が極めて轟くなる。
IjlOs:2.1. Al5Os: 1.8. CuO:2
.. 0゜11 Snow Om: 2-5 ←) Firing in air at about 450℃, about 80 molecules → Characteristics** Temperature: 1G6xlO-' Softening point: about 5ssc (5) Pulp) Components (weight 5) 810! :5g~57. Mujmaro0”: 1G-20゜Pb
O:2G~31BNa*O:4-0~&I$KsO:6
1$=7.5 (b) Characteristic coefficient of thermal expansion: 94X1G-' Softening point: approximately 625°C According to this electrode forming method, there is no generation of microcracks in the pulp 3, and the manufacturing time is significantly reduced. Furthermore, since the hermetic sealing area (sealing area) is smaller,
The hermetic seal is extremely good. Furthermore, the manufacturing equipment can be simplified and safety is extremely high in terms of pollution.

以上説明したように本発明による静電偏向形撮像管によ
れに1メツシエ導過電極、偏向電極を透明導電膜形成溶
液を塗布し焼成して形成したことによって、高歩留りで
蓄量性が大輪に向上できるとともに気密封止の信頼性が
大輪に向上で自るなどの極めて優れ友効来が得られる。
As explained above, the electrostatic deflection type image pickup tube according to the present invention has a single mesh conductor electrode and a deflection electrode formed by applying a transparent conductive film forming solution and firing, thereby achieving a high yield and large storage capacity. In addition, the reliability of hermetic sealing can be improved to a large extent, providing extremely excellent benefits.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による静電偏向形撮像管の一例を示す費
部断向構成図、謔2図ないし籐4図は本発明による静電
偏向形撮像管の一例を説明するための豐部断−工相図で
ある。 1・・・・面板、2・・・・光導電膜、3・・拳Oパル
プ、4・−・・インジウム、5・・・・信号取り出し電
極、6番・・・メツシエ電極、T拳・・・メツシュ電極
保持体、$・畳・・メツシュ電極保持体、■・・・・貫
通孔、10・・・・メツシエ導過電極、10m、10b
、1・−・・・・透明導電膜、11・・・・gklII
I点ガラス、12・・・・導電性接着剤、13・−・・
電導供給用端子、14・・・・固定用接着剤、1!S・
・・・偏向電極、11mm a m−間隔部、ll*s
ee保饅換。 第1図 第2図 第3図 第4図
FIG. 1 is a cross-sectional configuration diagram showing an example of an electrostatic deflection type image pickup tube according to the present invention, and Figures 2 to 4 are side sections for explaining an example of an electrostatic deflection type image pickup tube according to the present invention. It is a cut-out phase diagram. 1...Face plate, 2...Photoconductive film, 3...Fist O pulp, 4...Indium, 5...Signal extraction electrode, No. 6...Messier electrode, T fist...・・Mesh electrode holder, $・ Tatami ・・Mesh electrode holder, ■・・・Through hole, 10 ・・・Meshie conductive electrode, 10 m, 10 b
, 1...transparent conductive film, 11...gklII
I point glass, 12... conductive adhesive, 13...
Conductive supply terminal, 14...Fixing adhesive, 1! S.
...Deflection electrode, 11mm a m-spacing part, ll*s
ee exchange. Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

【特許請求の範囲】 1、ガラスパルプのメツシュ電極近傍管壁に貫通孔を設
け、皺貫通孔のパルプ内外壁面および該貫通孔内画壁に
被着形成された透明導電膜からな^メツシ凰導過電極と
、前iガラスパルプorImmK所定形状に被着形成畜
れ九透−導電膜からなる静電偏向電極とを備え九ことを
%−とする静電偏向形撮像管。 1 ガラスパルプ内外wtwtoメッシェ導過電極。 静電偏向電極を形成しない領域に保護膜を塗布する1薯
と、前記パルプO上記両電極を形成する領域に透明導電
膜を、被着−成する工程と・帥記透明導電瞑を―威して
前記保1IIIを除去する工1とを^備してなる静電偏
向形撮俸管の製造方法。
[Scope of Claims] 1. A through hole is provided in the tube wall near the mesh electrode of glass pulp, and the mesh is made of a transparent conductive film formed by adhering to the inner and outer wall surfaces of the pulp of the wrinkled through hole and the wall inside the through hole. An electrostatic deflection type imaging tube comprising an electrostatic deflection electrode and an electrostatic deflection electrode made of a transparent conductive film formed by adhering glass pulp or ImmK in a predetermined shape. 1 Glass pulp inner and outer mesh conducting electrode. A step of applying a protective film to the area where the electrostatic deflection electrode is not to be formed, and a step of depositing a transparent conductive film to the area of the pulp O where both electrodes are to be formed. A method for manufacturing an electrostatic deflection type photographic tube, comprising step 1 of removing the above-mentioned retainer 1III.
JP10935481A 1981-07-15 1981-07-15 Electrostatic deflection type camera tube and its production method Pending JPS5812246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10935481A JPS5812246A (en) 1981-07-15 1981-07-15 Electrostatic deflection type camera tube and its production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10935481A JPS5812246A (en) 1981-07-15 1981-07-15 Electrostatic deflection type camera tube and its production method

Publications (1)

Publication Number Publication Date
JPS5812246A true JPS5812246A (en) 1983-01-24

Family

ID=14508093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10935481A Pending JPS5812246A (en) 1981-07-15 1981-07-15 Electrostatic deflection type camera tube and its production method

Country Status (1)

Country Link
JP (1) JPS5812246A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3417577A1 (en) * 1983-05-12 1984-11-15 Sony Corp., Tokio/Tokyo IMAGE RECEIVER
DE3431241A1 (en) 1983-08-26 1985-03-14 Sony Corp., Tokio/Tokyo Cathode ray tube
JPS6074458U (en) * 1983-10-27 1985-05-25 株式会社東芝 Image tube

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3417577A1 (en) * 1983-05-12 1984-11-15 Sony Corp., Tokio/Tokyo IMAGE RECEIVER
DE3431241A1 (en) 1983-08-26 1985-03-14 Sony Corp., Tokio/Tokyo Cathode ray tube
JPS6074458U (en) * 1983-10-27 1985-05-25 株式会社東芝 Image tube
JPH0338933Y2 (en) * 1983-10-27 1991-08-16

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