JPS58119632A - Susceptor for vertical vapor phase growth device - Google Patents
Susceptor for vertical vapor phase growth deviceInfo
- Publication number
- JPS58119632A JPS58119632A JP178482A JP178482A JPS58119632A JP S58119632 A JPS58119632 A JP S58119632A JP 178482 A JP178482 A JP 178482A JP 178482 A JP178482 A JP 178482A JP S58119632 A JPS58119632 A JP S58119632A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- shape
- reaction vessel
- phase growth
- extending over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
発明の技術分野
この発明は、縦型気相成長装置用サセプタに関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a susceptor for a vertical vapor phase growth apparatus.
発明の技術的背景
従来、縦型気相成長装置に於ては、第１図第２図に示す
ように半導体ウェハＷの保持具としてたとえば角錘もし
くは角錘台の如き形状の（いわゆるバｌ／ ルタイプ）
サセプタ１，２が広く使用されており、これらのサセプ
タ１．２Ｆｉいずれもその底面形状が正多角形であった
。TECHNICAL BACKGROUND OF THE INVENTION Conventionally, as shown in FIG. 1 and FIG. / le type)
Susceptors 1 and 2 are widely used, and both of these susceptors 1 and 2Fi have regular polygonal bottom shapes.
背景技術の問題点
前記のように、公知のサセプタはいずれも正多角形の底
面形状を有しているが、第６図に示すように公知の縦型
気相成長装置の反応容器は、一般に縦形の１筒形である
ため、該反応容器６中にたとえば第１図の如きサセプタ
１を入れると、第６図に示すように反応容器６の底面部
３ａがサセプタ１の底面の外側に張り出した状態となる
。この場合サセプタ１の底面の外側に張り出している反
応容器底面部６ａはサセプタ１の外面に沿う上下方向の
ガス流路（すなわち反応容器３の内周面６ｂとサセプタ
１の外面とによって囲まれた上下方向の空間）の流出口
を構成することになるが、このガス流路の横断面面積及
び該流出口は第６図に示すようにサセプタ１の稜１ａの
近傍で最も小さく、且つ、サセプタ１の鏝面の二等分線
１ｂに沿った位置で最大であるため、サセプタの外面に
沿って下降するガス流は該二等分線１ｂの近傍に集まり
、従ってサセプタの稜１ａに沿って下降するガス流量は
サセプタの鏝面の二等分線１ｂに沿って下降するガス流
量よりも著しく小さくなる。その結果、従来形のサセプ
タ１に半導体ウェハＷを増り付けて縦型気相成長装置の
反応容器３中で気相成長を行わせると、半導体ウェハＷ
の中央部（これはサセプタの鏝面の垂直二等分線１ｂ上
に沿った部分である）の気相成長厚が該ウェハＷの両側
縁部（これはサセプタの稜１ａの近傍に位置している部
分である）の気相成長厚より著しく大きくなり、半導体
ウェハの品質管理上、改善すべき問題になっていた。Problems with the Background Art As mentioned above, all known susceptors have a regular polygonal bottom shape, but as shown in FIG. Since it has a vertical cylindrical shape, when the susceptor 1 as shown in FIG. 1 is placed in the reaction container 6, the bottom surface 3a of the reaction container 6 protrudes outside the bottom surface of the susceptor 1, as shown in FIG. The state will be as follows. In this case, the reaction vessel bottom part 6a protruding outside the bottom surface of the susceptor 1 is surrounded by the vertical gas flow path along the outer surface of the susceptor 1 (i.e., the inner circumferential surface 6b of the reaction vessel 3 and the outer surface of the susceptor 1). The cross-sectional area of this gas flow path and the outlet are smallest near the edge 1a of the susceptor 1, as shown in FIG. 1, the gas flow descending along the outer surface of the susceptor gathers near the bisector 1b, and therefore flows along the edge 1a of the susceptor. The descending gas flow rate is significantly smaller than the descending gas flow rate along the bisector 1b of the trowel surface of the susceptor. As a result, if a semiconductor wafer W is added to the conventional susceptor 1 and vapor phase growth is performed in the reaction vessel 3 of a vertical vapor phase growth apparatus, the semiconductor wafer W
(this is the part along the perpendicular bisector 1b of the trowel surface of the susceptor), the vapor phase growth thickness is the same as that of the both edges of the wafer W (this is the part located near the edge 1a of the susceptor). This was significantly larger than the vapor phase growth thickness of the wafer (which is the part where the wafer is formed), and this was a problem that needed to be improved in terms of quality control of semiconductor wafers.
発明の目的
この発明の目的は、前記問題点を解決し、気相成長工程
に於て半導体ウェハの全面にわたってほぼ一様な気相成
長厚が得られるように改良したサセプタを提供すること
である。OBJECTS OF THE INVENTION An object of the present invention is to provide an improved susceptor that solves the above-mentioned problems and allows a substantially uniform vapor growth thickness to be obtained over the entire surface of a semiconductor wafer during the vapor growth process. .
発明の概要
本発明者は、サセプタ、の鏝面に沿って流れるガス流れ
が各鏝面の全面にわたって均一となるように試作全行っ
た結果、サセプタの底面の外側に張り出す反応容器底面
面積が該サセプタの底面部外周の全周にわたって均一で
あるようにサスペタを構成すれば、サセプタの鏝面に沿
って流れるガス流を該鏝面の各部にわたってほぼ均一化
できること全見出した。Summary of the Invention The inventor of the present invention has made a prototype so that the gas flow flowing along the trowel surfaces of the susceptor is uniform over the entire surface of each trowel surface, and as a result, the area of the bottom surface of the reaction vessel protruding outside the bottom surface of the susceptor has been reduced. It has been discovered that if the susceptor is constructed so as to be uniform over the entire circumference of the bottom surface of the susceptor, the gas flow flowing along the trowel surface of the susceptor can be made substantially uniform over each part of the trowel surface.
従ってこの発明によるサセプタは底部平面形状が反応容
器の底部平面形と相似もしくは同一形状に成形されてい
ることを特徴とするものである。Therefore, the susceptor according to the present invention is characterized in that its bottom planar shape is similar to or identical to the bottom planar shape of the reaction vessel.
発明の実施例
以下に第４図乃至第９図を参照してこの発明の実施例に
ついて説明する。Embodiments of the Invention Embodiments of the invention will be described below with reference to FIGS. 4 to 9.
がウニ・・載置面４ａｉ構成している角錐状部分として
成形されているが、その下部４ｂは円錐形に成形されて
おり、その底面の平面形状は第５図に示すように反応容
器３の底面と相似もしくは同一の円形に成形されている
。従って、このサセプタ４を反応容器３内に収容した場
合、サセプタ底面部の外周面と反応容器６の底面部内周
壁面との間隙がサセプタ底面部の全周にわたって同一と
なり、その結果、サセプタ外面に沿う上下方向のガス流
路の流出口断面積がサセプタの全周にわたって同一とな
るため、サセプタの外面に沿うガス流ｉｔをサセプタの
全面にわたって同一にすることができる。The sea urchin... is formed as a pyramid-shaped part constituting the mounting surface 4ai, but its lower part 4b is formed into a conical shape, and the planar shape of the bottom surface is similar to that of the reaction vessel 3 as shown in FIG. It is shaped into a circular shape similar to or the same as the bottom of the. Therefore, when this susceptor 4 is housed in the reaction vessel 3, the gap between the outer circumferential surface of the susceptor bottom and the inner circumferential wall of the bottom of the reaction vessel 6 is the same over the entire circumference of the susceptor bottom. Since the cross-sectional area of the outlet of the vertical gas flow path is the same over the entire circumference of the susceptor, the gas flow it along the outer surface of the susceptor can be made the same over the entire surface of the susceptor.
該サセプタ４の下部４ｂの底面部は、第５図に示すよう
にその上部の角錐状部分の正射影図形に対する外接円と
なっており、各ウェハ載置面４ａは第６図に示すように
その下端に形成された段部４ｃを介して該下部４ｂの外
周の円錐面に連っている。該段部４ｃはウェハの滑落を
防止するための部分である。As shown in FIG. 5, the bottom surface of the lower part 4b of the susceptor 4 forms a circumcircle with respect to the orthogonal projection of the pyramid-shaped portion of the upper part thereof, and each wafer mounting surface 4a has a circumscribed circle as shown in FIG. It is connected to the conical surface of the outer periphery of the lower portion 4b via a step portion 4c formed at its lower end. The stepped portion 4c is a portion for preventing the wafer from sliding down.
第７図及び第８図は、第１図の従来形サセプタ１とこの
発明のサセプタ４とを用いて同一の縦型気相成長装置に
於て有機ガリウム−アルシン法によりＧａＡＳｆ４体の
気相成長全行った結果を示したものである。同図に於て
横軸は半導体ウェハ上に水平方向にとった測定点の位置
を示し、縦軸は半導体ウニ・・の中心部の気相成長厚を
１００として各測定点における気相成長厚を百分率で示
したものである。なお、第９図に示すように半導体ウェ
ハＷ」二の各測定点ａ −ｉは反応容器内のガスＧの向
きに対し７て直角方向（すなわち水平方向）に配列され
ている。7 and 8 show the vapor phase growth of GaASf4 by the organic gallium-arsine method in the same vertical vapor phase growth apparatus using the conventional susceptor 1 of FIG. 1 and the susceptor 4 of the present invention. This shows the results of all tests. In the figure, the horizontal axis indicates the position of measurement points taken horizontally on the semiconductor wafer, and the vertical axis indicates the vapor growth thickness at each measurement point, with the vapor growth thickness at the center of the semiconductor urchin being 100. is expressed as a percentage. As shown in FIG. 9, the measurement points a to i on the semiconductor wafer W'2 are arranged in a direction perpendicular to the direction of the gas G in the reaction vessel (that is, in a horizontal direction).
発明の効果
第７図（本発明のサセプタ４を使用した結果）と第８図
（従来形式のサセプタ１を使用した結果）とを比較する
と、この発明のサセプタ４を用いた時は半導体ウェハＷ
上の各測定点の気相成長厚が従来形式のサセプタ１を用
いた時にくらべて均一化し、改善されていることがわか
る。これは、各ウェハ載置面におけるガス流の分布が均
一化されりが提供される。Effects of the Invention Comparing FIG. 7 (results using the susceptor 4 of the present invention) and FIG. 8 (results using the conventional type susceptor 1), it is found that when the susceptor 4 of the present invention is used, the semiconductor wafer W
It can be seen that the vapor growth thickness at each measurement point above is made more uniform and improved compared to when the conventional susceptor 1 is used. This provides a uniform gas flow distribution on each wafer mounting surface.
なお、気相成長装置の加熱方式として高周波誘導加熱方
式を採用する場合にはサセプタ自身を発熱体として構成
することになるが、その場合に於てもこの発明の原理を
採用したサセプタを設計すれば気相成長装置の性能を改
善することができる。Note that when a high-frequency induction heating method is adopted as a heating method for a vapor phase growth apparatus, the susceptor itself will be configured as a heating element, but even in that case, it is necessary to design a susceptor that adopts the principles of this invention. The performance of the vapor phase growth apparatus can be improved.
第１図及び第２図は従来のサセプタの斜視図、第６図は
第１図のサセプタを縦型気相成長装置の反応容器中に設
置して半導体ウェハの気相成長を行った場合の問題点を
説明するための平面図、第４図はこの発明によるサセプ
タの一実施例の斜視図、第５図は第４図の平面図、第６
図は第５図のＶｌ −Ｖｌ矢祝断面図、第７図は第４図
のサセプタを使用して気相成長を行った場合の半導体ウ
ェハ上の各点の気相成長厚の分布を示した図、第８図は
第１図の従来のサセプタを使用して気相成長を行った場
合の半導体ウエノ・上の気相成長厚の分布を示した図、
第９図は第７図及び第８図の各測定点を示した図である
。
１．２．４・・・サセプタ、６・・・反応容器、Ｗ・・
・半導体ウニ・・、４ａ・・・ウニ・・載置面、４ｂ・
・・下部。
特許出願人 東京芝浦電気株式会社
代理人 弁理士諸田英二
ｔｓ１図 第２図
填３図
第４図
第９図
竿８図
第７図Figures 1 and 2 are perspective views of conventional susceptors, and Figure 6 shows the susceptor shown in Figure 1 installed in a reaction vessel of a vertical vapor phase growth apparatus for vapor phase growth of semiconductor wafers. 4 is a perspective view of one embodiment of the susceptor according to the present invention; FIG. 5 is a plan view of FIG. 4;
The figure shows a cross-sectional view of the Vl-Vl arrow in Fig. 5, and Fig. 7 shows the distribution of vapor-phase growth thickness at each point on a semiconductor wafer when vapor-phase growth is performed using the susceptor shown in Fig. 4. Figure 8 is a diagram showing the distribution of the vapor phase growth thickness on the semiconductor wafer when vapor phase growth is performed using the conventional susceptor shown in Figure 1.
FIG. 9 is a diagram showing each measurement point in FIGS. 7 and 8. 1.2.4...Susceptor, 6...Reaction container, W...
・Semiconductor sea urchin..., 4a...Sea urchin...Placement surface, 4b...
··beneath. Patent Applicant Tokyo Shibaura Electric Co., Ltd. Agent Patent Attorney Eiji Morota TS1 Figure 2 Filler 3 Figure 4 Figure 9 Pole 8 Figure 7
Claims (1)
は同一の形状に成形されていることを特徴とする縦型気
相成長装置用サセプタ。1. A susceptor for a vertical vapor phase growth apparatus, characterized in that the bottom planar shape is similar to or the same as the bottom planar shape of a reaction vessel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP178482A JPS58119632A (en) | 1982-01-11 | 1982-01-11 | Susceptor for vertical vapor phase growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP178482A JPS58119632A (en) | 1982-01-11 | 1982-01-11 | Susceptor for vertical vapor phase growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58119632A true JPS58119632A (en) | 1983-07-16 |
Family
ID=11511196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP178482A Pending JPS58119632A (en) | 1982-01-11 | 1982-01-11 | Susceptor for vertical vapor phase growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58119632A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61193428A (en) * | 1985-02-22 | 1986-08-27 | Toshiba Corp | Semiconductor vapor growth device |
| EP0738789A2 (en) * | 1995-04-18 | 1996-10-23 | MEMC Electronic Materials, Inc. | Susceptor and baffle therefor |
| WO2013013588A1 (en) * | 2011-07-22 | 2013-01-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber device and plasma processing apparatus having same |
-
1982
- 1982-01-11 JP JP178482A patent/JPS58119632A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61193428A (en) * | 1985-02-22 | 1986-08-27 | Toshiba Corp | Semiconductor vapor growth device |
| EP0738789A2 (en) * | 1995-04-18 | 1996-10-23 | MEMC Electronic Materials, Inc. | Susceptor and baffle therefor |
| EP0738789A3 (en) * | 1995-04-18 | 1997-06-25 | Memc Electronic Materials | Susceptor and baffle therefor |
| WO2013013588A1 (en) * | 2011-07-22 | 2013-01-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber device and plasma processing apparatus having same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4780169A (en) | Non-uniform gas inlet for dry etching apparatus | |
| US5019117A (en) | Plasma apparatus | |
| JP3437883B2 (en) | Electrostatic chuck, electrostatic chuck system, and method for processing semiconductor wafer | |
| US5964947A (en) | Removable pumping channel liners within a chemical vapor deposition chamber | |
| JPH0476493B2 (en) | ||
| US8097082B2 (en) | Nonplanar faceplate for a plasma processing chamber | |
| JP6333338B2 (en) | Susceptor for holding a semiconductor wafer having an alignment notch, method for depositing a layer on a semiconductor wafer, and semiconductor wafer | |
| KR20190138319A (en) | Slope Etch Profile Control | |
| WO2021055990A1 (en) | Ald cycle time reduction using process chamber lid with tunable pumping | |
| JPS58119632A (en) | Susceptor for vertical vapor phase growth device | |
| WO2014050903A1 (en) | Plasma etching device | |
| JP2005503009A (en) | Susceptor with epitaxial growth control device and epitaxial reactor using the same | |
| JP2536406B2 (en) | Semiconductor manufacturing equipment | |
| JPS61119685A (en) | Parallel flat plate type dry etching device | |
| US20220312553A1 (en) | Heater assembly with purge gap control and temperature uniformity for batch processing chambers | |
| JPH06196413A (en) | Reduced-pressure cvd film growth device | |
| WO2002009198A9 (en) | Etching apparatus having a confinement and guide object for gas flow of plasma and method for using same | |
| JP2656745B2 (en) | Wafer processing method | |
| JPH0713943B2 (en) | Semiconductor vapor deposition equipment | |
| JPS62219913A (en) | Barrel type vapor growth apparatus | |
| TW202213432A (en) | Flat bottom shadow ring | |
| JPS62268127A (en) | Plasma reacter and its usage | |
| JPH0722318A (en) | Vertical vapor epitaxial growing device | |
| JPS62143420A (en) | Semiconductor vapor growth device | |
| JPH01160023A (en) | Wafer tool of vertical cvd apparatus |