JPS58114430A - Resist film pattern formation - Google Patents
Resist film pattern formationInfo
- Publication number
- JPS58114430A JPS58114430A JP21397581A JP21397581A JPS58114430A JP S58114430 A JPS58114430 A JP S58114430A JP 21397581 A JP21397581 A JP 21397581A JP 21397581 A JP21397581 A JP 21397581A JP S58114430 A JPS58114430 A JP S58114430A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- mask
- resist film
- film
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
（１） ＠明の技術分野
本発明はレジスト膜のパターン形成方法に関するもので
、特に垂直なエツジを持ち、パターン精度が良好な厚い
レジストパターンを形成する方法に関する。DETAILED DESCRIPTION OF THE INVENTION (1) @Ming's Technical Field The present invention relates to a method for forming a resist film pattern, and particularly to a method for forming a thick resist pattern having vertical edges and good pattern accuracy.
（２）技術の背景
薄Ｉｌ！磁気ヘッドや半導体集積回路を製造するのにフ
ォトリングラフィ技術は必須の技術である。(2) Technical background weak! Photolithography technology is an essential technology for manufacturing magnetic heads and semiconductor integrated circuits.
フォトリソグラフィを用いてパターン形成を行なう場合
、レジストの厚さとそのパターン幅精度はお互いに相反
する。すなわち、０．２〜０．５ｊ＠程度の薄いレジス
トではパターン精度は良いが、厚くなるにつれて元の回
折現象により精度は低下する。近年の電子デバイスは下
層パターンに高段差を有していることが多く、薄いレジ
ストではステップカバリクジ不良となる。さらにそのレ
ジストをマスクにしてプラズマエッチ、イオンエッチ。When forming a pattern using photolithography, the thickness of the resist and the accuracy of the pattern width are contradictory to each other. That is, pattern precision is good with a thin resist of about 0.2 to 0.5 j@, but as the resist becomes thicker, the precision decreases due to the original diffraction phenomenon. In recent years, electronic devices often have high step differences in the underlying patterns, and thin resists result in step coverage defects. Then use the resist as a mask for plasma etching and ion etching.
リフトオフ、マスクメッキなどの技術を用いてデバイス
を加、工する場合必然的に厚いレジストが必要となる。When processing devices using techniques such as lift-off and mask plating, thick resist is inevitably required.
しかしながら、レジストの厚さが２〜４Ｊ−と厚くなれ
ば、パターン精度を確保するのは非常に困難となる。However, if the thickness of the resist becomes as thick as 2 to 4 J-, it becomes very difficult to ensure pattern accuracy.
（３）従来技術と問題点
Ｍ１図の断面図にて従来提案されているバターン形成方
法を説明する。先づ基１ｔｆＬｔ上の厚いレジスト膜２
の上ＫＳｉＯ！１１１３を付着させ、その上に薄いレジ
スト膜４を形成した後、この上層レジスト４に精度のよ
いパターンを形成し、そのパターンをマスクにしてＳｔ
Ｏ，膜３をＣＨＦ、ガスで反応性Ｒ、Ｆスパッタエツチ
ングによシ除去する。さらにその８１０１パターン３を
マスクにして下層の厚いレジスト膜２を、０！を用いた
反応性Ｒ，Ｆスパツタエッチッングを施すことにより精
度のよい上層の薄いレジストパターン４を下層の厚いレ
ジスト膜２に転写する。この方法は、１９７９年にＪ−
Ｍ−Ｍｏｒｈｎ等によりて発表された。（図−１）（Ｂ
ＳＴＪ、Ｍａｒ−Ｊｕｎｅ １９７９．Ｐ、Ｐ１０２
７＃照）しかし、この方法はＳ１０．や厚いレジストの
エツチングのために反応性Ｒ，Ｆスパッタエツチング装
置が必要となること、また装置内部および試料が汚染さ
れやすいという欠点をもっている。特に厚いレジスト膜
２をエツチングすることは非常に大変で、現実的な方法
とはいえなかった。(3) Prior Art and Problems A conventionally proposed pattern forming method will be explained with reference to the cross-sectional view of FIG. M1. First, thick resist film 2 on base 1tfLt
Above KSiO! After depositing St.
The O, film 3 is removed by reactive R, F sputter etching using CHF gas. Furthermore, using the 8101 pattern 3 as a mask, the lower thick resist film 2 is coated with 0! By performing reactive R, F sputter etching using a method, the thin upper resist pattern 4 with good precision is transferred onto the thick lower resist film 2. This method was developed in 1979 by J-
Published by M-Morhn et al. (Figure-1) (B
STJ, Mar-June 1979. P, P102
7#) However, this method is not suitable for S10. This method has disadvantages in that a reactive R,F sputter etching device is required for etching thick resists, and that the inside of the device and the sample are easily contaminated. Etching a particularly thick resist film 2 is very difficult and cannot be said to be a practical method.
（４） 発明の目的
本発明は厚いレジスト厚２をエツチングによらず、ｎＦ
ｉｔよく４元、現像する製法を提供することにある。(4) Purpose of the Invention The present invention provides a method for reducing the thickness of a thick resist 2 without using etching.
It is to provide a manufacturing method that can be used for four-dimensional development.
（５）発明の構成
本発明のレジスト膜のパターン形成方法は、基板上に第
１のレジスト膜、該第１のレジスト膜を感応させるエネ
ルギー嶽に対して不透明な薄膜、及び該８＋！１のレジ
スト膜よシ薄い第２のレジスト膜を順次形成するニー、
該第２のレジスト膜に該エネルギー線を選択的に照射し
、現像して所定のパターンにする工程、該第２のレジス
ト族をマスクにして該薄膜をエツチングする工程、該薄
膜のパターンをマスクにして全面に該エネルギー線を照
射し現像して、該第１のレジスト厚をパターニングする
工程とを含むことを特徴とする。(5) Structure of the Invention The resist film pattern forming method of the present invention includes a first resist film on a substrate, a thin film that is opaque to an energy level to which the first resist film is sensitized, and the 8+! sequentially forming a second resist film thinner than the first resist film;
selectively irradiating the second resist film with the energy beam and developing it into a predetermined pattern; etching the thin film using the second resist group as a mask; masking the pattern of the thin film. irradiating the entire surface with the energy rays and developing the resist, thereby patterning the first resist thickness.
（６）発明の実施例
本発明は、２〜３μＳと厚いレジスト膜をｍ元すると、
その膜厚に加えて基板の九わみ等に伴うマスク基板との
ギャップ（２〜３μＳ）があるため、光の回折作用を起
していたことに基づいてなされたものである。すなわち
、厚いレジスト膜の上に密着してマスクパターンを設け
て露光することで、上記ギャップがなくなル精度を上げ
ることができるわけでおる。以下、実施例を図面に従っ
て説明する。(6) Embodiments of the Invention In the present invention, when a resist film as thick as 2 to 3 μS is used,
This was done based on the fact that in addition to the film thickness, there was a gap (2 to 3 μS) between the mask and the substrate due to the deflection of the substrate, which caused a light diffraction effect. That is, by providing a mask pattern in close contact with a thick resist film and exposing it to light, the gap can be eliminated and the accuracy can be improved. Examples will be described below with reference to the drawings.
第２図は本実施例の各工程断面図である。FIG. 2 is a sectional view of each step in this embodiment.
先づ（ａ）に示すように、基板１１上に第１のレジスト
族としてポジ温フォトレジスト１２を３．５μ錫の厚さ
に塗布し、感光性を損なわない温度でプリベークし浴剤
を蒸発させる。その上にＮ膜として０．１μｍの厚さの
アルミニウムＤ＃膜１３を蒸着し、さらにその上に第２
のレジスト膜として０．５μｍ１１４度の７オトレジス
ト１４を塗布し、上記プリベークよシ低い温度でプリベ
ークを行なう。そして所定のフォトマスクによシ、第２
のレジスト１４を皇元、現像する。First, as shown in (a), a positive temperature photoresist 12 as the first resist group is coated on the substrate 11 to a thickness of 3.5μ tin, and prebaked at a temperature that does not impair photosensitivity to evaporate the bath agent. let On top of that, an aluminum D# film 13 with a thickness of 0.1 μm is deposited as an N film, and a second
A resist film of 0.5 .mu.m and a temperature of 114.degree. Then, apply a second photomask to a prescribed photomask.
Resist 14 is then developed.
次に（ｂ）に示すように、第２のレジスト１４をマスク
にして薄Ｍｌ ３ｔ−エツチングする。このエツチング
はリン販Ｈ，Ｐ０４等を用いたクエットエッチングによ
シ（資）単にできる。薄膜１３は０．１μ易と薄いため
アンダーカットなぐ精度の高いエツチングが可能である
。Next, as shown in (b), thin Ml 3t-etching is performed using the second resist 14 as a mask. This etching can be simply carried out by Couette etching using phosphorus H, P04, or the like. Since the thin film 13 is as thin as 0.1 μm, highly accurate etching without undercutting is possible.
次に（Ｃ）に示すように、アルミニウムよりなる薄膜１
３をマスクにして第１のレジスト１２全面にエネルギー
線として紫外線を照射する。アルミニウムの薄膜１３は
紫外線に対し不透明であるため、薄膜１３のない部分の
第１のレジスト膜のみが露光される。そして現像する。Next, as shown in (C), a thin film 1 made of aluminum
3 as a mask, the entire surface of the first resist 12 is irradiated with ultraviolet rays as energy rays. Since the aluminum thin film 13 is opaque to ultraviolet light, only the portions of the first resist film without the thin film 13 are exposed. Then develop it.
アルミニウム薄膜１３は第１のレジスト１２に密着して
いるため、前述したギャップによる元の回折もなく、精
度良くパターニングすることができる。この実施例にお
いては、線幅２．５１１■、レジスト厚３．５μＳのパ
ターンがエツジもほとんど垂直でパターン精度も良好で
あった。Since the aluminum thin film 13 is in close contact with the first resist 12, there is no original diffraction due to the gap described above, and patterning can be performed with high precision. In this example, a pattern with a line width of 2.511 mm and a resist thickness of 3.5 μS had almost vertical edges and good pattern accuracy.
本実施例では、上層、下層とも紫外線に感応するフォト
レジストを例にして示したが、さらに波長の短かい遠紫
外線や電子線、Ｘ線に感応するレジストを上層、下層に
用いれば、さらに微細なパターンがウェハー全面にわた
りて高歩留ｔｂで達成できることはいうまでもない。ざ
らにマスク材はアルミニウム薄膜にとどまらず、Ｃｕ等
その膜の形成時に下層レジストのエネルギー線に対する
Ｉで応待性を損なわず、かつ上層、下層レジストを感応
させるエネルギー線に対し、不透明ならば何 （ｄ）
でもよい。In this example, a photoresist sensitive to ultraviolet rays is used for both the upper and lower layers, but if a resist sensitive to far ultraviolet rays with shorter wavelengths, electron beams, or X-rays is used for the upper and lower layers, even finer details can be obtained. Needless to say, a similar pattern can be achieved over the entire wafer with a high yield tb. Roughly speaking, mask materials are not limited to aluminum thin films, but can also be made of Cu, etc., as long as they do not impair responsiveness to the energy rays of the lower resist when forming the film, and are opaque to the energy rays that sensitize the upper and lower resist layers. d)
But that's fine.
（７）発明の効果
本発明によれば、高価な装置も不要で従来の遮光、現像
方法を用いることができるため汚染もな （ｂ）く
、また試料の大きさにかかわらず、全面にわたシ高歩留
まシで、厚いレジストパターンを精度良く形成すること
ができる。(7) Effects of the Invention According to the present invention, there is no need for expensive equipment and conventional light shielding and developing methods can be used, so there is no contamination (b) and regardless of the size of the sample, it can be applied over the entire surface. Thick resist patterns can be formed with high precision at a high yield.
４、図面の簡単な説明
（Ｃン嬉１図は従来例の断面図、第２図は本発明の各
工程断面図である。4. Brief explanation of the drawing
(Figure 1 is a cross-sectional view of the conventional example, and Figure 2 is a cross-sectional view of each step of the present invention.
図中、１１は基板、１２は第１のレジスト膜、１３は薄
膜、１４は第２のレジスト膜である。In the figure, 11 is a substrate, 12 is a first resist film, 13 is a thin film, and 14 is a second resist film.
第１図Figure 1
Claims (1)
させるエネルギー線に対して不透明な薄膜、及び該第１
のレジスト膜より薄い第２のレジスト膜をｊｌ［次形成
する工程、該第２のレジスト膜に該エネルギー線を選択
的に照射し、現像して所定のパターンにする工程、該＄
２のレジスト膜をマスクにしてｗＩ簿膜をエツチングす
る工程、該簿俣のパターンをマスクにして全面に該エネ
ルギー線を照罰し、現像して該第１のレジスト族をパタ
ーニングする工程とを含むことを特徴とするレジスト族
のパターン形成方法。a first resist film on a substrate, a thin film opaque to energy rays that sensitize the first resist film, and the first resist film;
a step of forming a second resist film thinner than the resist film of , a step of selectively irradiating the second resist film with the energy beam and developing it into a predetermined pattern;
a step of etching the wI film using the second resist film as a mask; and a step of irradiating the entire surface with the energy beam using the resist film as a mask and developing it to pattern the first resist group. A method for forming a resist family pattern, the method comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21397581A JPS58114430A (en) | 1981-12-26 | 1981-12-26 | Resist film pattern formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21397581A JPS58114430A (en) | 1981-12-26 | 1981-12-26 | Resist film pattern formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58114430A true JPS58114430A (en) | 1983-07-07 |
Family
ID=16648161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21397581A Pending JPS58114430A (en) | 1981-12-26 | 1981-12-26 | Resist film pattern formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114430A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7989154B2 (en) * | 2005-11-04 | 2011-08-02 | Korea Advanced Institute Of Science And Technology | Polymer or resist pattern, and metal film pattern, metal pattern and plastic mold using the same, and fabrication methods thereof |
-
1981
- 1981-12-26 JP JP21397581A patent/JPS58114430A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7989154B2 (en) * | 2005-11-04 | 2011-08-02 | Korea Advanced Institute Of Science And Technology | Polymer or resist pattern, and metal film pattern, metal pattern and plastic mold using the same, and fabrication methods thereof |
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