JPS58110087A - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPS58110087A JPS58110087A JP56212262A JP21226281A JPS58110087A JP S58110087 A JPS58110087 A JP S58110087A JP 56212262 A JP56212262 A JP 56212262A JP 21226281 A JP21226281 A JP 21226281A JP S58110087 A JPS58110087 A JP S58110087A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wavelength
- laser
- laser device
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
(1) 発明の技術分野
本発明は半導体レーザ装置にかhす、特に新規な反射層
を設け゛た構造に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a semiconductor laser device, particularly to a structure provided with a novel reflective layer.
(2) 従来技術と問題点
半導体レーザ装置は光通信用として注目されている発振
器であるが、この橋のレーザ装置として分布■反射器(
Distribut@d Bragg R@fl@ct
or)を設け、共振させて単一軸モード発振を実現する
構造が知られている。(2) Conventional technology and problems Semiconductor laser devices are oscillators that are attracting attention for optical communications, but as a laser device for this bridge, distributed reflectors (
Distribution@d Bragg R@fl@ct
A structure is known in which a single-axis mode oscillation is achieved by providing a single-axis mode oscillation.
第1図はその一例の断面構造図を示して詣り、Ga A
I As レーザ素子の側端面に4(但し、人は発振波
長、+1は屈折率を示す)又はその整数倍の精密な波形
状の回折格子1を長い距離に亘って形成L1 この格子
1により分布形反射が行なわれるものである。図におい
て、2はP電極、3はP−GaAl中ヤップ層、噂はP
−Ga1−、 AI!Asクラッド層、5はP又はn−
Ga1−y Aly As活性層、6はn−G&11A
1. Asクラッド層、7はn−GaAs基板、8はh
電極を示し、園折格子はクラッド層又は活性層に形成さ
れる。このような−折格子1はレーザ光の光干渉を利用
して、フォトレジスト族をパターンニングし1次いで化
学エツチングして結晶面を波形にする、いわゆるレーザ
光源の波社で波形が決まる形成方法が適用されるが、長
い距離の間を正確に、再現性よく形成することは困難で
あり、格子の乱れによって^いLitい値となる欠点が
ある。Figure 1 shows an example of the cross-sectional structure.
I As A diffraction grating 1 with a precise waveform of 4 (in the case of oscillation wavelength and +1 indicates the refractive index) or an integer multiple thereof is formed over a long distance on the side end face of the laser element L1 Distribution by this grating 1 Shape reflection takes place. In the figure, 2 is the P electrode, 3 is the Yap layer in P-GaAl, and the rumor is that the P
-Ga1-, AI! As cladding layer, 5 is P or n-
Ga1-y Aly As active layer, 6 is n-G&11A
1. As cladding layer, 7 is n-GaAs substrate, 8 is h
The electrodes are shown and the lattice is formed in the cladding layer or the active layer. This type of diffraction grating 1 is formed by patterning a photoresist group using optical interference of a laser beam, and then chemically etching it to form a waveform on the crystal plane.The waveform is determined by the waveform of the laser light source. is applied, but it is difficult to accurately and reproducibly form long distances, and there is a drawback that the lattice disorder results in a low Lit value.
また、分布帰還履レーザ(Distributed F
eedBack La5er)も同様の格子を活性層に
形成しているが、これも同様に形成が離しい。In addition, distributed feedback lasers (Distributed F lasers)
eedBack La5er) also has a similar lattice formed in its active layer, but the formation is similarly spaced apart.
(3)発明の目的
本発明は上記欠点に鑑みて、化学エツチングによること
なしに形成される分布型反射器をもった半導体レーザ装
置を提案するものである。(3) Purpose of the Invention In view of the above drawbacks, the present invention proposes a semiconductor laser device having a distributed reflector formed without chemical etching.
(4)発明の構成
その目的は、レーザ素子端面に嘉又はその整数倍の膜厚
を有し、且つレーザ結晶と同じ材料で結晶組成比の興な
る多層膜な複数積層した反射層が設けられた半導体レー
ザ装置により達成することができる。(4) Structure of the Invention The object of the invention is to provide a reflective layer on the end face of a laser element, which is a multilayer film having a film thickness of Ka or an integral multiple thereof, and made of the same material as the laser crystal and having a different crystal composition ratio. This can be achieved using a semiconductor laser device.
(5)発明の実施例
以下、実施例により説明すると、第211は本発明をG
a AI Asレーザに適用した断面図である。図示の
ように反射層lOはダブルへテロ接合のGaAlAlと
同一成分で、2櫨以上の異なる組成の多層膜11を周期
的に繰り返えし積層しており、この反射層lOによって
強い波長選択をうけ、特定の波長が強く反射されて、単
一軸モードの発振がえられる。(5) Examples of the invention To explain the following with examples, the 211th embodiment of the invention will be described with reference to examples.
a It is a sectional view applied to an AI As laser. As shown in the figure, the reflective layer 1O has the same component as GaAlAl of the double heterojunction, and two or more multilayer films 11 with different compositions are periodically laminated, and this reflective layer 1O provides strong wavelength selection. As a result, specific wavelengths are strongly reflected, resulting in single-axis mode oscillation.
例えば、n−Ga1−、A1yAa活性層5がy−o、
usのレーザ装置では、波長8300人に対して、多層
膜11をGa、、 AI、 As1l[11AとGa1
−bAlbA−膜JIBとから構成し、a−0,L b
−0,18に選ぶとこの両膜で約1%の屈折率差がつき
、両膜の合計膜厚を1180人即ちA=1180として
、これを50周期#M度に成長して、反射層lOとすれ
ば、上記波長830(lλのレーザ光を強力に反射して
、低しきい値の単一軸モード発振のレーザ装置をえるこ
とができる。For example, n-Ga1-, A1yAa active layer 5 is yo,
In the US laser device, for a wavelength of 8300 people, the multilayer film 11 is Ga, AI, As1l [11A and Ga1
-bAlbA- film JIB, a-0,L b
-0.18, there will be a refractive index difference of about 1% between the two films, and the total thickness of both films will be 1180 layers, that is, A=1180, and this will be grown to 50 cycles #M degrees to form a reflective layer. If it is lO, the laser beam with the wavelength of 830 (lλ) can be strongly reflected, and a laser device with a single axis mode oscillation with a low threshold value can be obtained.
そして、かような多層膜からなる反射層は分子線エピタ
キシャル成長法を用いて、精度よく形成することができ
る。即ち、分子線エピタキシャル成長法は、超^真空中
でGa、 AI、 Asの入っているそれぞれの分子線
源セルを別々に加熱し、魚発させるから、成分組成のI
llが容易であり、又成焼速度を1原子層/秒とするこ
ともできるから、膜厚の制御性は極めてすぐれている。The reflective layer made of such a multilayer film can be formed with high precision using molecular beam epitaxial growth. That is, in the molecular beam epitaxial growth method, each molecular beam source cell containing Ga, AI, and As is heated separately in an ultra-vacuum and emitted, so the I of the component composition is
11 is easy, and the firing rate can be set to 1 atomic layer/second, so the controllability of the film thickness is extremely excellent.
したがって、上記lI厚1180λを膜厚590^のG
職参AIO,l A8換11Aと膜厚5901の”0.
11 AI(1,、sAs 膜11 Bと番こ変化させ
、これを周期的にくりかへして50層に積層し、商精度
にすることが可能である。Therefore, the above lI thickness of 1180λ is converted to G with a film thickness of 590^.
Joban AIO, l A8 conversion 11A and film thickness 5901"0.
11 AI (1,, sAs film 11 B), which are periodically stacked to form 50 layers, can achieve quotient accuracy.
(6)発明の効果
以上の実施例から明らかなように、本発明は反射器な多
層膜から形成した反射層構造を有するもので、従来の化
学エッチで形成した波形状園折格子より^精度に形成で
きるため発振波長の反射率が向上し、安定した低しきい
値かえられ、半導体レーザ装置の^品質化に著しく貢献
するものである。尚、上記Ga AI Asレーザ以外
にも、例えばInGaAaPレーザ装置などに適用で象
ることは言うまでもないう(6) Effects of the Invention As is clear from the above embodiments, the present invention has a reflective layer structure formed from a multilayer film that is a reflector, and has a higher precision than the conventional waveform grid formed by chemical etching. Since it can be formed into a thin film, the reflectance of the oscillation wavelength is improved, a stable low threshold value can be obtained, and this significantly contributes to improving the quality of semiconductor laser devices. It goes without saying that in addition to the above-mentioned Ga AI As laser, the present invention can also be applied to, for example, an InGaAaP laser device.
第1図は従来の分布−反射器を有する半導体レザ装置で
、第2図は本発明にかbる分布反射器を有する半導体レ
ーザ装置である。
図中、1は従来の波形状回折格子、辺は本発明にか−る
反射層、11は多層膜を示す。
第1図
第2図
1FIG. 1 shows a semiconductor laser device having a conventional distributed reflector, and FIG. 2 shows a semiconductor laser device having a distributed reflector according to the present invention. In the figure, 1 is a conventional wave-shaped diffraction grating, the side is a reflective layer according to the present invention, and 11 is a multilayer film. Figure 1 Figure 2 Figure 1
Claims (1)
1:屈折率)又はその整数倍の膜厚を有し、且つレーザ
結晶と同じ材料で結晶組成比の異なる多層膜を複数積層
した反射層が設けられたことを特徴とする半導体レーザ
装置。λ (λ: laser oscillation wavelength, 1
1: refractive index) or an integral multiple thereof, and is provided with a reflective layer formed by laminating a plurality of multilayer films made of the same material as a laser crystal and having different crystal composition ratios.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56212262A JPS58110087A (en) | 1981-12-24 | 1981-12-24 | Semiconductor laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56212262A JPS58110087A (en) | 1981-12-24 | 1981-12-24 | Semiconductor laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58110087A true JPS58110087A (en) | 1983-06-30 |
Family
ID=16619661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56212262A Pending JPS58110087A (en) | 1981-12-24 | 1981-12-24 | Semiconductor laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58110087A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60113983A (en) * | 1983-11-26 | 1985-06-20 | Mitsubishi Electric Corp | Semiconductor light-emitting device and manufacture thereof |
EP0361399A2 (en) * | 1988-09-28 | 1990-04-04 | Canon Kabushiki Kaisha | Semmiconductor laser array including lasers with reflecting means having different wavelength selection properties |
EP0388149A2 (en) * | 1989-03-13 | 1990-09-19 | Sharp Kabushiki Kaisha | A semiconductor laser device and a method for the production of the same |
FR2741195A1 (en) * | 1995-11-10 | 1997-05-16 | Thomson Csf | Quantum well device, perpendicular to layers forming laser |
US5721752A (en) * | 1995-12-15 | 1998-02-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
WO2004025795A1 (en) * | 2002-09-11 | 2004-03-25 | Bookham Technology Plc | Pump laser diode with improved wavelength stability |
-
1981
- 1981-12-24 JP JP56212262A patent/JPS58110087A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60113983A (en) * | 1983-11-26 | 1985-06-20 | Mitsubishi Electric Corp | Semiconductor light-emitting device and manufacture thereof |
EP0361399A2 (en) * | 1988-09-28 | 1990-04-04 | Canon Kabushiki Kaisha | Semmiconductor laser array including lasers with reflecting means having different wavelength selection properties |
US4993036A (en) * | 1988-09-28 | 1991-02-12 | Canon Kabushiki Kaisha | Semiconductor laser array including lasers with reflecting means having different wavelength selection properties |
EP0388149A2 (en) * | 1989-03-13 | 1990-09-19 | Sharp Kabushiki Kaisha | A semiconductor laser device and a method for the production of the same |
FR2741195A1 (en) * | 1995-11-10 | 1997-05-16 | Thomson Csf | Quantum well device, perpendicular to layers forming laser |
US5721752A (en) * | 1995-12-15 | 1998-02-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser device |
WO2004025795A1 (en) * | 2002-09-11 | 2004-03-25 | Bookham Technology Plc | Pump laser diode with improved wavelength stability |
US6819702B2 (en) | 2002-09-11 | 2004-11-16 | Bookham Technology Plc | Pump laser diode with improved wavelength stability |
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