JPS58110038A - Pattern formation - Google Patents
Pattern formationInfo
- Publication number
- JPS58110038A JPS58110038A JP56208797A JP20879781A JPS58110038A JP S58110038 A JPS58110038 A JP S58110038A JP 56208797 A JP56208797 A JP 56208797A JP 20879781 A JP20879781 A JP 20879781A JP S58110038 A JPS58110038 A JP S58110038A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- etching
- film
- etched
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
この発明はリング２フイにおけるレジストパターンを被
エツチング蹟、板に転写するためのパターン形成方法に
関するものでめる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a pattern forming method for transferring a resist pattern on a ring 2 fin to a plate to be etched.
従来、基板にＰｉｒ望するパターンを＃成する一合、党
の照射によって起る化学ＥＦＪな反１らで、ある的剤に
対する溶解性が著しく変化す仝感シむ性８゛億尚子材料
、所謂レジストを塗叡し、・での恢珈冗パターンの描画
されたカラスマスクと九字的＋叡とを用いてｊＩ元、現
像プロセスを施゛じ、レジストパターンを形成するとい
う１５１ｒ請リソグフフイを行った儀、基板Ｗ科ｔウェ
ット又扛ドライ法でエッチングしていた。最近超Ｌ８ル
ベルの一密度化集槓回路の＃！造に伴い、パターンの倣
−化が要求され１μｍ又はそれ以下の寸法を十分制御し
てパターン形成することが必要となってきており、この
ためリングラフィ手段として光学面方法から電子ビーム
の＠捩描画方法への移行が提案されてきている。そこで
、この電子ビームリングラフィにおいても電子ビームに
感応する、例えばＰＭＭＡ（ポリメチルメタクリレート
）やＰ ＧＭＡ （ポリグリシギルメタクリレート）が
用いられ、同様々現像プロセスを経て、パターン形成さ
れていた。しかるにこれらの電子ビーム用レジストを用
いて実際に集積回路等で使われるパターンを形成する場
合に、近接効果とドライエツチングに対する耐性とが大
きな問題となっていた。すなわち電子ビームが熱射され
ると、主に基板表面で先生した２次電子がレジスト中で
紋乱されるため、近接したパターンの大小によって入射
された鎖酸のレジスト感ｋが式化するという近−幼米と
ｌＦ？＃′ｉ、れる塊象が生じ、この効果がパターンの
淑梢化と共に顕著となり制ｍ性や解像度に支障をきたし
ていた。また尚解藏注ＯＰｂａＭムやＰＧＭＡのような
電子ビーム用Ｖシストはスパッタエツチング等のドライ
エツチング手段によって基板への転写【行う場合、レジ
ストのエツチング速度が速く、エツチングマスクとして
十分に耐え難い欠点があり、レジスートパターンを基板
材料に積置よく転写できない間組力・めった。Conventionally, when forming a desired pattern on a substrate, materials with 80 million yen sensitivity, whose solubility to a certain target agent changes markedly due to chemical EFJ reactions caused by irradiation, are used. A 151R printing process was performed in which a so-called resist was applied, and a resist pattern was formed by applying a development process using a crow mask with a red pattern drawn in . However, the substrate was etched using a wet or dry method. Recently, # of the ultra-L8 Lebel single-density concentrator circuit! As phosphorography advances, pattern copying is required, and it has become necessary to form patterns with sufficient control over dimensions of 1 μm or smaller. For this reason, phosphorography methods have changed from optical surface methods to electron beam @twisting. A transition to a drawing method has been proposed. Therefore, in this electron beam phosphorography, materials sensitive to electron beams, such as PMMA (polymethyl methacrylate) and PGMA (polyglycygyl methacrylate), are used, and patterns are formed through a similar development process. However, when using these electron beam resists to form patterns that are actually used in integrated circuits, the proximity effect and resistance to dry etching have become major problems. In other words, when an electron beam is thermally irradiated, the secondary electrons emitted mainly on the substrate surface are disturbed in the resist, so the resist sensitivity k of the incident chain acid is expressed by the size of the nearby pattern. Kin-Youmai and IF? #'i, a lumpy phenomenon occurs, and this effect becomes noticeable as the pattern becomes thinner, causing problems in controllability and resolution. In addition, V-sist for electron beams such as OPBAM and PGMA is transferred to the substrate by dry etching means such as sputter etching, but the etching speed of the resist is high and it has the drawback that it cannot withstand sufficiently as an etching mask. However, the resist pattern may not be properly transferred to the substrate material due to assembly force or failure.
これらの問題点を軽減するために３＃ｗ＃４がベル研究
所のＪ、Ｍ、Ｍｏｒａｎ等によってジャーナルオフ／（
キ＾−ムサンエンスアンドテクノロジー１６巻１６２０
Ｘ （Ｊ 、 Ｖａｃｕｍ ５ｃｉｅｎｃｅ ａｎｄ
’ｉ’ｅｃｈｎｏ−１０ｇ７ １６．１９２０（１９
７９））に提案されている。こｏａｍｍ造はレジストを
マスクとして中間層をエツチング除去し、続いて中間層
をマスクとして下地有機高分子塗映を選択的にエツチン
グすることによって得られる。匠米の該：３ｒ＊ｍ造で
は中間層にシリコン歇化−９輩化−、シリコン課等のよ
うに酸素ガスを使用するドライエツチングにお込て蝕刻
され醋い無機吻實初糾が遇はれでおりこれらの中間層形
成力＆としてｔ龜で＃１層する必要からプラズマＣＶＤ
法や真空蒸着法やスパッタ法轡が用いられていた。し〃
為し、これらの中間層形成に関するＰｊｒ一工程が艮い
ために、生産能率や歩貿シの低下を未たす欠点があった
。In order to alleviate these problems, 3#w#4 was published by J, M, Moran and others at Bell Laboratories in a journal off/(
Kim^-Musience and Technology Volume 16 1620
X (J, Vacuum 5science and
'i'echno-10g7 16.1920 (19
79)). The Oamm structure is obtained by etching and removing the intermediate layer using a resist as a mask, and then selectively etching the underlying organic polymer coating using the intermediate layer as a mask. Takumai's classification: In 3R*M production, the middle layer is made of silicon, and as in the silicon section, the first hardening of the inorganic material that is etched in dry etching using oxygen gas is encountered. Due to swelling, it is necessary to form a #1 layer in order to form an intermediate layer using plasma CVD.
method, vacuum evaporation method, and sputter method were used. death〃
However, since the Pjr process related to the formation of these intermediate layers is complicated, there is a drawback that production efficiency and trade volume are lowered.
本曲は、上記３鳩嬉造におけ１中間層に有機Ｍ媒中に少
くともオルガノシラノール（一般式ｋＬｎ ｂ ｉ （
（Ｊｌリ 、ｎ＝１〜３）ｋｎ有する混合物を塗 −
Ｑ
布し１００℃以上で加熱して得られるシリコン酸化ｌ１
ｌＩ！！倉用いて所季工程を大幅に減少させるεとがで
きるパターン形成方法を提供するものである。This song contains at least organosilanol (general formula kLn b i (
(Jlli, n=1-3) Apply a mixture with kn -
Q Silicon oxide l1 obtained by applying cloth and heating at 100℃ or higher
lI! ! The purpose of the present invention is to provide a pattern forming method that can be used in a warehouse and that can significantly reduce the number of seasonal steps.
本発明によれば披エツチング材上に有機高分子塗−を形
成し、該壱憬＾分子塗良上に有機溶媒中に少くともオル
ガノシラノールを含有する混合物を塗醜し、こγＬｔ−
１００℃以上の温良で加熱してシリコン改化−金形槙し
、次いで該シリコン酸化真上にレジスト礁を設けるか、
あるいは被エツチング材上に有ａｉ！尚分子皇−を形成
し、該Ｍ磯高分子塗編上に有機溶媒中に少くともオルガ
ノシラノールを１有する混合物を盆−し、該血−上にレ
ジス） １ｍｔ−ｗｉけ、これを１００℃以上の温度で
加熱して前記混合物の塗膜をシリコン改化膜となした後
、リソグラフィ技術を用いて前記レジスト限に６【望の
パターンを形成し、該パターンか形成された前記レジス
ト嚢をマスクとして前記シリコン藏化挾をドライエツチ
ングした後、エツチングされずに残った該シリコン酸化
映をマスクとして前記有慎＾分子ｍ＠を少くとも＃／、
累ガスを宮む反応ガスを用いてドライエラチンブレ、そ
の披エツチングされずに！ｌＩ！った前記シリコン膜ま
たはエツチングされずに残りｆｃ前記竹機扁分子汰−を
マスクとして前記被エツチング材ｔエツチングすること
を特徴とするパターン形成方法を得る。According to the present invention, an organic polymer coating is formed on the etching material, and a mixture containing at least organosilanol in an organic solvent is coated on the polymer coating.
Either by heating at a temperature of 100° C. or higher to modify the silicon and molding it, and then providing a resist reef directly above the silicon oxidation, or
Or there is a problem on the material to be etched! A mixture containing at least 1 organosilanol in an organic solvent was placed on the Miso polymer coated layer, 1 mt-width (1 mt. After heating the mixture at a temperature above to form a silicone modified film, a lithography technique is used to form a desired pattern on the resist area, and the resist bag formed with the pattern is After dry-etching the silicon oxide film as a mask, the silicon oxide film remaining unetched is used as a mask to dry-etch the silicon oxide film at least #/,
Dry erasure using a reactive gas that absorbs the accumulated gas, without being exposed! lI! There is obtained a pattern forming method characterized in that the material to be etched is etched using the etched silicon film or the remaining unetched silicon film as a mask.
以下本発明の効果を一笑地νｕｉ用いＩＨしく述ヘル０
本発明の一央抛丙はオルガノシラノールの一植Ｃ鵬”ｉ
Ｃ０ｋｉ）ｓ 【アルコール中に台上させた混合物を
用いたものである。これはレジストのように所定の粘！
を含有するようにアルコールｃｃ俗舛させた塗布ａｔス
ピン飯布でウェハ上に均−ＶＣ塗布し１００℃以上の熱
処理によってアルコールケ除去した結果ｂｉ（Ｊｘ ＠
（１（ｘ≦２）が優られるものである、従って該３１
１＃構造の形成に要する工程はスピン迩布と熱処理だけ
であり極めて短時間に容易に形成でさる。このδ１（ｊ
ｘ−の廁厚は上記塗１献の枯匿、スピンｍｅ時のウェハ
の回転速ｇｊｔｅ制（財）することによって任意に設定
することができる。Below, I will explain the effects of the present invention in detail using νui.
The present invention is based on organosilanol.
C0ki)s [Uses a mixture placed on a bench in alcohol. This has a certain viscosity like a resist!
As a result of uniformly coating VC on the wafer with a spin cloth and removing the alcohol by heat treatment at 100°C or higher, the result was bi(Jx @
(1 (x≦2) is superior, so the 31
The steps required to form the 1# structure are only spin-spinning and heat treatment, and can be easily formed in an extremely short time. This δ1(j
The thickness of x- can be arbitrarily set by controlling the ablation of the coating described above and the rotational speed gjte of the wafer during spin me.
また上記熱処理時の雰囲気は濾水、酸素、窒気等通常の
リングラフイエ根で用いられる尽囲気を用いることρ為
できる。Further, the atmosphere during the above heat treatment can be an exhaust atmosphere such as filtered water, oxygen, nitrogen, etc., which is normally used for lingulae roots.
本案ｍｖｓにおいては仮エツチング−がシリコン酸化−
である、第１凶は本貝地列を祝−するための図で、上部
３ｍｍ造の形成及びエツチングにおける主要工程での＃
ｌ１ｉｆを朧を退りて俣式的に示した図である。段差の
めるシリコン＆板１ＯＩＫＣ■Ｄ散化良１０２倉約ｌ刷
ｎ■−厚で堆積させ、丙えはシラフレー社が線速するホ
ン形レジストでめるＡＺ−１３５０Ｊ（−品名） １０
３ ｋｉｌｌ １．５ｎｍの平均−厚で通称の一転血布
法によっ１仮躾し、１５０℃以上の温［−″Ｃ熱処堀す
る。続いてスピン遊布法によって”ａＳ ｉ （０ｋｉ
）ｓ ｔアルコールに嬉解シた塗布線１厚さ１００ＯＡ
たけ？Ａ布し１０４．さらにその上ＫＰＧＭＡ１１１１
０５をｊｌｌｌ［Ｌ、前焼きする。その後電子ビームで
直接描画し現像す５（ｂ）図）。In this MVS, temporary etching is silicon oxidation.
The first figure is a diagram to celebrate the main shell formation, and shows the ## in the main process of forming and etching the upper 3mm structure.
It is a diagram showing l1if in a less hazy manner. Silicone & plate to fill the step 1OIKC■D Diffusion quality 102 degrees Celsius Printing n■-Thickness is deposited, and the second one is made by Silafray Co., Ltd. with line speed Hong type resist AZ-1350J (-Product name) 10
3. The average thickness of 1.5 nm is temporarily tempered by the so-called ichikin blood cloth method, and then heat-treated at a temperature of 150°C or higher [-"C. Then, by the spin spread method, "aS i (0ki
) s 1 coated line coated with alcohol, thickness 100OA
Take? A cloth 104. Furthermore, KPGMA1111
05 jllll [L, pre-bake. After that, it is directly written with an electron beam and developed (Fig. 5(b)).
現像１［ｍ！ して％溶剤ｔ１ｍ去Ｌｉ’ＧＭＡＩＩ１
１０５をマスクとして％ ”’４ ｋ反応ガスとして反
応性スパッタエツチング法によシ該中１一層１０４を除
去する（（Ｇ）図）。続いて該中１１ａ盾１０４をマス
クとして酸素ガスを反応ガスとした反応性スパッタエツ
チングを行うと、基板に対して垂直に近い断面をもつ九
ムｚ−ｔｉｓｏＪｓ＜のパターンが形成される（（ｄ）
図）、第２図に酸素ガスを用いた反応スパッタエツチン
グにおける上記ＡＺ−１３５０Ｊｌ１ｍと上記８ム（Ｊ
ｘ＠のエツチング選択肢を示した。エツチング条件は酸
素ガス圧８０ｍＴｏｒｒ、ｆｉｔｓｏδｃｃｍ。Development 1 [m! % solvent t1m removedLi'GMAII1
The middle layer 104 is removed by a reactive sputter etching method using 105 as a mask and %''4k reactive gas (Figure (G)).Subsequently, using the middle 11a shield 104 as a mask, oxygen gas is removed as a reactive gas. When reactive sputter etching is performed with
Figure 2 shows the above AZ-1350Jl1m and the above 8mm (J
The etching options for x@ are shown. The etching conditions were an oxygen gas pressure of 80 mTorr and a fitso δccm.
パワーα０＾号−である。選択比は約５０で十分実用に
耐え得るものである。この選択比は健米中間層としてＩ
＠かられていたシリコン酸化膜、シリコン窒化ＩＩ、シ
リコン−と同等である。The power is α0^. The selection ratio is about 50, which is sufficient for practical use. This selection ratio is I as a healthy middle class.
It is equivalent to the silicon oxide film, silicon nitride II, and silicon-, which were made from @.
続いて該中間層１０４又は＊ＡＺ−１３５０１ｋ１０３
をマスクとして、 ＣＦ４ ＋”ｔを反応カスとした反
応性スパッタエツチングによってＣＶＩ）酸化ｍ１０２
をエツチングすると（ａ）図におけるＰ ＧＭＡ 績１
０５のパターン寸法と同１［の寸法を有する酸化−１０
２のパターンが形成される（（Ｃ）図）。その転写精度
は従来列と同等であった。また転写寸法として０．３μ
ｍが得られた。Subsequently, the intermediate layer 104 or *AZ-13501k103
CVI) oxidized m102 by reactive sputter etching using CF4+”t as a mask and reactive scum.
By etching, (a) P GMA result 1 in figure
Oxidation-10 with the same pattern dimensions as 05 and 1[
2 patterns are formed (Figure (C)). The transfer accuracy was equivalent to that of the conventional column. Also, the transfer size is 0.3μ
m was obtained.
ここでは有機尚分子暎材料としてＡＺ−１３５ＯＪ−を
用いたが、特に元や電子ビームによって感応するレジス
トとは限らず、塗布できるポリイミドる。Here, AZ-135OJ- was used as the organic molecular weight material, but it is not limited to resists that are particularly sensitive to electron beams or polyimides that can be coated.
この実ｆｌ丙では、中間ｌ曽としてＣｆ％ ｂ ｉ （
”’ ）ｓをアルコールを主成分とする俗解したｗａｇ
を用いた。これは１００℃以上の熱処理によって容易に
８ｉ（）ｘ（１＜Ｘ≦２）に変換されるのでＣＦ番プラ
ズマに対してエツチングされるが、Ｔ万Ｏ１７′″ラズ
マでは十分マスク注ｆｔ有する。本実施列では有機島分
子−を塗布した後、熱処理したが３層を連続的にスピン
塗布した後、最故に熱処理して本兄明と同じ効果を有す
る３層構造を形成することも可能である。また、中Ｉｄ
１層としてはＣＨ，８ｉ（（ＪＨ）ｎに限らずオルガノ
シラノールであればよい。In this actual fl C, Cf% b i (
``') s is a slang term for wag whose main ingredient is alcohol.
was used. This is easily converted into 8i()x (1<X≦2) by heat treatment at 100° C. or higher, so it is etched in the CF plasma, but with a T0,000, 17″ plasma, it has a sufficient masking effect. In this example, the organic island molecules were coated and then heat treated, but it is also possible to form a three-layer structure with the same effect as the present invention by sequentially spin-coating three layers and then heat-treating them. There is. Also, middle Id
The first layer is not limited to CH, 8i((JH)n, but may be any organosilanol.
また本案−ガではレジスト−としてネガ屋のＰＧＭＡＩ
Ｉを用いたが、他の極類のレジストでも。In addition, as a resist for this project, PGMAI of the negative store was used.
I was used, but other polar class resists were also used.
さらにポジ鑞のレジストを用いても本祐明の効果は変わ
らない。Furthermore, even if a positive resist is used, the effect of Moto Yumei remains the same.
また１本ＳＡ施列では中間層、有礪尚分子塗−１被エツ
チング面をそれぞれ反応ガスの異なる反応性スパッタエ
ツチング法を朗いたが、反応ガスを切）換えるだけで同
一真空チャンバー内でエツチングすることが可能である
。さらに何磯＾分子塗膜のエツチングには反応性スパッ
タエツチング法の他に円ｔｔｔｉｍプラズマエッナング
法やイオンミリング法が使用でき、それらの方法ヲ用い
ても、上紀実施岡と同じ効果が得られる。In addition, in the case of one-line SA processing, the intermediate layer and the surface to be etched with a rich molecule coating-1 were etched using a reactive sputter etching method using different reactive gases, but etching can be performed in the same vacuum chamber by simply switching the reactive gas. It is possible to do so. Furthermore, in addition to the reactive sputter etching method, circular tttim plasma etching method and ion milling method can be used for etching molecular coatings, and even if these methods are used, the same effect as that of Jouki Jitsugoka can be obtained. can get.
を九被エツチング材とじて本実施列ではシリコン酸化−
を用いたが他にも金網、８ｉ、シリザイド、 ８ｉ、Ｎ
４．Ａｘ、ｕ、 、（ｉａＡｓ等の１ｎ−ｖ族化合物。In this example, silicon oxidation was performed with nine etching materials.
We used wire mesh, 8i, silizide, 8i, N
4. Ax, u, (1n-v group compounds such as iaAs).
ＩＩ−ＶＩ族化合物等も本兄明によれはｉＪ舵である。According to the present inventor, II-VI group compounds are also iJ rudders.
以上ｌ！明したように本発明によるパターン形成方法で
は工程がきわめて容易で短時間であ）かつエツチングに
ついても少くとも従来列と同等の効果が得られており倣
祷なパターンを有する集積回路の製造工程に尋人するこ
とができる。That’s all! As explained above, the pattern forming method according to the present invention is extremely easy and takes a short time), and the etching effect is at least equivalent to that of the conventional method. Can be interrogated.
１１１１図（ａ）（ｂ）（Ｃ）（ｄ）（ｅ）各図は本発
明の一実施内を６Ｌ明するための図で、詳細な説明中で
述べた３層ＩＩ造の形成及びエツチングにおける主要工
程でＯ該３層祷造の断面を顔を追って示した模式争縞２
図は本発明で中間層として用＾た５ｉ（Ｊｘ暎と有ｌｌ
１ＩＩＩＩ分子膜として用いたＡＺ−”１３５０Ｊ１ｍ
との＠素を反応カスとして用いたスパッタエラｆ７”Ｋ
Ｔｈけるエツチング速度を示したものである。
図中の壷号は以下のものを示している。
１０１・・・シリコン＆板、１０２・・・被エツチング
―。
１ｏｓ−ｈｔ−１３５０Ｊｈ、１０４−ｍ布ｆｂｌｆｃ
！ Ｄ 形成ッチング速度。
（ｄ／）
Ｃｅ）
第２図
工・ンモンゲｅ存ｒ句 ｃ勺っ1111 Figures (a), (b), (C), (d), and (e) are diagrams for explaining one implementation of the present invention, and show the formation and etching of the three-layer II structure described in the detailed description. Schematic diagram 2 showing the cross section of the three-layer construction in the main process.
The figure shows the 5i (Jx and
AZ-”1350J1m used as 1III molecular membrane
Sputtering error f7”K using @ element as reaction residue
This figure shows the etching speed. The bottle numbers in the figure indicate the following. 101...Silicon & board, 102...To be etched. 1os-ht-1350Jh, 104-m cloth fblfc
! D formation etching rate. (d/) Ce) 2nd drawing/nmonge e existr phrase c 勺
Claims (1)
分子ｌｉ！−上に有ｍ溶媒中に少くともオルガノシラノ
ールを含有する混合物ｔ−塗映しこれｔ１００℃以上の
ｍ度で加熱してシリコン鈑化ｉｍｔ−形成し、次いで販
シリコン販化−上にレジスト餉を設けるかあるいは被エ
ツチング材上に有機＾分子＊映を形成し、＃＆有機尚分
子塗映上に有愼溶媒中に少くともオルガノシラノールｔ
−）有する混合物ｔｌｌｌｌｌｌシ、該厘決上にレジス
ト−を設け、これｔ１００℃以上の一度でＤ０熱して前
記混合物の翅楓をシリコン教化−となした後、リングラ
フィ婢術を出いてｍ記しジスト映に所望のパターンを形
成し該パターンが形成された前記レジスト−をマスクと
し″Ｃ前ｄ己シリコン１ｋ１１ＳｌｌＩｔ”ドライエツ
チングした故、エツチング避ｎｔに残った該シリコン鹸
化ｖ４をマスクとして前記有−簡分子違膜を少くとも酸
素ガスを含む反応ガスを槓いてドライエツチングし、そ
の故エツチングされずに残った目σ６己シリコン酸化−
またはエツチングされずに残った１Ａｋ２有機高分子塗
論をマスクとして＠ｍｌｍ二値チング材をエツチングす
ることｔ−特畝と・ｒるパターン形成方法。An organic molecular blood is formed on the material to be etched, and both organic molecules li! - A mixture containing at least organosilanol in a solvent is coated on top and heated at 100°C or more to form a silicon plate, and then a resist plate is applied on the silicon plate. or by forming an organic molecule coating on the material to be etched, and adding at least an organosilanol t in a solvent on the #&organic molecule coating.
-) A resist is placed on the mixture, and the resist is heated to a temperature of 100°C or higher to convert the mixture into silicone. A desired pattern was formed on the resist image, and the resist with the pattern formed thereon was used as a mask for dry etching.The saponified silicon V4 remaining in the etching area was then used as a mask for dry etching. The simple molecular film is dry-etched using a reactive gas containing at least oxygen gas, and therefore the remaining unetched portions are oxidized to silicon.
Alternatively, etching the @mlm binary etching material using the 1Ak2 organic polymer coating that remained unetched as a mask is a method of forming a pattern with special ridges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56208797A JPS58110038A (en) | 1981-12-23 | 1981-12-23 | Pattern formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56208797A JPS58110038A (en) | 1981-12-23 | 1981-12-23 | Pattern formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58110038A true JPS58110038A (en) | 1983-06-30 |
| JPH0542810B2 JPH0542810B2 (en) | 1993-06-29 |
Family
ID=16562271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56208797A Granted JPS58110038A (en) | 1981-12-23 | 1981-12-23 | Pattern formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58110038A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6125141A (en) * | 1984-07-16 | 1986-02-04 | Tokyo Denshi Kagaku Kabushiki | Mask forming material |
| JPS62291119A (en) * | 1986-06-11 | 1987-12-17 | Toray Ind Inc | Manufacture of semiconductor element |
| JPS6316623A (en) * | 1986-07-08 | 1988-01-23 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS63140539A (en) * | 1986-12-02 | 1988-06-13 | Nec Corp | Manufacture of semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4244799A (en) * | 1978-09-11 | 1981-01-13 | Bell Telephone Laboratories, Incorporated | Fabrication of integrated circuits utilizing thick high-resolution patterns |
| JPS5649540A (en) * | 1979-06-21 | 1981-05-06 | Fujitsu Ltd | Semiconductor device |
| JPS5858734A (en) * | 1981-05-07 | 1983-04-07 | ハネウエル・インコ−ポレ−テツド | Method of generating positive electronic resist video with high sensitivity |
-
1981
- 1981-12-23 JP JP56208797A patent/JPS58110038A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4244799A (en) * | 1978-09-11 | 1981-01-13 | Bell Telephone Laboratories, Incorporated | Fabrication of integrated circuits utilizing thick high-resolution patterns |
| JPS5649540A (en) * | 1979-06-21 | 1981-05-06 | Fujitsu Ltd | Semiconductor device |
| JPS5858734A (en) * | 1981-05-07 | 1983-04-07 | ハネウエル・インコ−ポレ−テツド | Method of generating positive electronic resist video with high sensitivity |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6125141A (en) * | 1984-07-16 | 1986-02-04 | Tokyo Denshi Kagaku Kabushiki | Mask forming material |
| JPS62291119A (en) * | 1986-06-11 | 1987-12-17 | Toray Ind Inc | Manufacture of semiconductor element |
| JPS6316623A (en) * | 1986-07-08 | 1988-01-23 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS63140539A (en) * | 1986-12-02 | 1988-06-13 | Nec Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0542810B2 (en) | 1993-06-29 |
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