JPS58100489A - Method of producing printed circuit board - Google Patents

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 脅Ｗ１１の属する技術分野 禾発明は、プリント配ＩＩ板Ｏ製造方法に係シ、さらに
詳しくは、樹脂基板上に無電解めつ會によ〕直接導電回
路を形成するゾリンＦ配線徹ＯＩｌ造方法に関する。[Detailed Description of the Invention] The technical field to which threat W11 pertains The invention relates to a method for manufacturing a printed wiring board O, and more specifically, to directly forming a conductive circuit on a resin substrate by electroless metallization. This article relates to a method for manufacturing Zolin F wiring.

従来技術とそＯ問題点 電子機！！ＩＯ小型化や高性能化に伴ない、これらの機
器に実装されるプリント配ｌｉ板についても、高密度配
線による小型化および高信頼性化が強く要望されている
。従来、プリント配線板の１１ａは、主として銅張シ積
層板を出発材料とし、スルーホールを設ける場合には穿
孔、無電解めっき、電気めっきを施してスルーホールを
形成し、然る後にレジストを用いて銅箔Ｏ非回路部分を
エツチング除去゛するという所謂サブトラクティブ法が
用いられていた。これに対し、近年、樹脂基板を出発材
料として、基板表面の所要回路部分（スルーホールを設
ける場合には、そのため買通孔内部を含む。Conventional technology and its problems Electronic machines! ! With the miniaturization and higher performance of IOs, there is a strong demand for printed LI boards mounted in these devices to be smaller and more reliable through high-density wiring. Conventionally, the printed wiring board 11a mainly uses a copper-clad laminate as a starting material, and when a through hole is to be provided, the through hole is formed by drilling, electroless plating, or electroplating, and then a resist is used. A so-called subtractive method was used in which the non-circuit portions of the copper foil were removed by etching. On the other hand, in recent years, resin substrates have been used as starting materials for the required circuit portions on the surface of the substrate (including the inside of the through holes if through holes are provided).

以下、同、）にＯみ、無電解めっきを用いて選択的に導
電ノ々ターンを形放すみ、所謂アデイテイプ法が注目さ
れている。Hereinafter, the so-called addi-tape method is attracting attention as a method of selectively releasing conductive nozzles using electroless plating.

後者Ｏ方法社、前者Ｏ方法に比較して、微細なパターン
形ｊＥＫ遍する、絶縁基板の導電部とスルーホール部と
が同時に形成されるためスルーホール接続信頼性が高い
、材料の無駄な損失が少なく省資源の要請にも適合する
、ブス）Ｏ点でも有利である、製造工程が簡単である、
など多くの長所が指摘されている優れた製造方法である
。Compared to the former O method, the conductive part of the insulating substrate and the through hole part are formed at the same time, so the through hole connection reliability is high, and there is no unnecessary loss of material. It also meets the requirements for resource saving, has an advantage in terms of ugly) O point, and has a simple manufacturing process.
This is an excellent manufacturing method that has been pointed out to have many advantages.

特に樹脂基板上に露光によシ、無電解めっきに必Ｉｌｌ
触媒核をＩＩ起させ得る感光層を設け、スルーホール部
内壁をも含め感光ｌ−をパターン状に露光し、然る後に
無電解めっきによシ導捧回路とするプリント配線の手法
は、製造プロセスが簡単で且つ黴ｌＩＡΔターンが得ら
れるため、アディティブ法ｏ９ｅｇｏ姿と考えられてい
る。しかしこの手法を、実用化する場合２つの解決しな
ければならない問題が残されている。即ち、＠ｌの問題
点は樹脂基板と導体回路の密着力をいかに確保するかで
あ）、纂２０問題点は、無電解めっきを続けると樹脂基
板中Ｏ低分子物質が一つき液中ＫＩＥｔＬ［てめつＩ液
に悪影響をおよ埋すことである。１１１の問題点に対す
る解決策として従来から行なわれている方法は、樹脂基
板上に予め工）　１３ルｆムを主成分とする接着剤層を
設け、めっきに先立ち接着剤表面をクロム酸−硫酸系Ｏ
ＩＩ化剤で処理して粗面で且つ親水性とし、めっき膜が
絶縁板に強固に密着するように工夫し良ものである。こ
の手法は密着力を得る点では成功しているが周知のよう
に六価り四人化合物の使用は人体に有害であシ、取扱い
に際しては極めて慎重な管理を要す。更に適切な密着力
を得るには接着剤中のニトリルジムの配合量を適切な範
囲、例えば、樹脂の総量に対して重量比で３０〜６０％
に維持しなければならない、この条件を維持しようとす
ると、他の成分として普通使用されているフェノール樹
脂と工４パ゛　。Particularly necessary for exposure to resin substrates and electroless plating.
A method of printed wiring in which a photosensitive layer capable of generating catalyst nuclei is provided, the inner walls of the through-hole portions are exposed in a pattern, and then electroless plating is applied to form a conductive circuit. Since the process is simple and a mold IIAΔ turn can be obtained, it is considered to be an additive method. However, two problems remain that must be solved if this method is to be put into practical use. In other words, the problem with @l is how to ensure the adhesion between the resin substrate and the conductor circuit), and the problem is that if electroless plating is continued, one O low molecular substance in the resin substrate will be removed from the KIEtL in the liquid. [It has a negative effect on the Temetsu I solution.] The conventional method to solve the problem of 111 is to prepare an adhesive layer containing 13 lume as a main component on a resin substrate, and then coat the adhesive surface with chromic acid-sulfuric acid before plating. System O
It is a good product because it is treated with a II agent to make the surface rough and hydrophilic so that the plating film firmly adheres to the insulating plate. Although this method has been successful in obtaining adhesion, as is well known, the use of hexavalent tetravalent compounds is harmful to the human body, and extremely careful management is required when handling them. Furthermore, in order to obtain appropriate adhesion, the amount of nitrile gym in the adhesive should be within an appropriate range, for example, 30 to 60% by weight based on the total amount of resin.
In order to maintain this condition, the other components commonly used are phenolic resins and four-layer resins.

キシ樹脂の混合物は、架橋反応が十分に進行しない、従
って、通常導体回路形成に使用されている無電解鋼めっ
きの場合の高温、高アルカリ、長時間浸漬からなるめっ
き条件に耐えられず、接着剤層中の低分子成分がめつき
液中に流出する。現在、実用されているマスク法による
アディティブ法の場合には非回路部分に接着剤層よシは
癌かに強固な架橋を行なえるマスク材層が置かれるため
にこのマスク材層によって接着剤層からの、低分子成分
の流出がある程度防げるがマスク法は材料が高価で非常
に手間のかかる方法であり、マスク法を行わない感光層
から直接ｇ党によシめつき核を析出させる手法では樹脂
基板の非回路部分がどうしてもめつき液中に露出してい
るため、低分子成分の流出を押えるとと蝶極めて厄介か
問題である。The cross-linking reaction does not proceed sufficiently with the xy resin mixture, and therefore, it cannot withstand the plating conditions of high temperature, high alkali, and long immersion in the case of electroless steel plating, which is usually used for forming conductor circuits, and the adhesion does not occur. Low molecular components in the agent layer flow into the plating solution. In the case of the additive method using the mask method that is currently in practical use, an adhesive layer is placed on the non-circuit part, and a mask material layer that can perform extremely strong crosslinking is placed on the non-circuit part. However, the masking method uses expensive materials and is very time-consuming, and the method of directly precipitating the sticking nuclei from the photosensitive layer without using the masking method Since the non-circuit parts of the resin substrate are inevitably exposed to the plating solution, it is extremely troublesome to prevent the outflow of low-molecular components.

発明の目的 本発明は、前述した従来のプリント配線板の製造方法の
欠点を改夷したもので、導体回路が極めて優れた密着力
を有し、かつ、めっき液の汚染に非常に有効なプリント
配線板の製造方法を提供することを目的とする。Purpose of the Invention The present invention corrects the drawbacks of the conventional printed wiring board manufacturing method described above, and provides a printed wiring board in which the conductor circuit has extremely excellent adhesion and is extremely effective against contaminating the plating solution. The purpose of the present invention is to provide a method for manufacturing a wiring board.

発明の概要 本発明は、樹脂基板表面に絶縁性のセラミック材料を熔
射してセラミック薄膜層を形成し、少なく七も一株の感
光性化合物を含み、露光により、直接的にまた祉、露光
後の処理によシ、間接的に無電解めつき０触媒核となシ
得る金属粒子を析出せしめることが可能な感光層を骸セ
ラミック薄膜層上に設け、該感光層をパターン状に露光
しｇ元部分に無電解めっきの触媒核となり得る金属粒子
を析出せしめ、そして未露光部分の感光層を除去した後
に無電解めっきによシ露光部分にめっき膜を析出させる
ことを特徴とするプリント配線板の製造方法である。SUMMARY OF THE INVENTION The present invention involves depositing an insulating ceramic material on the surface of a resin substrate to form a ceramic thin film layer, which contains at least one photosensitive compound, and which can be directly exposed to light by exposure to light. A photosensitive layer capable of depositing metal particles that can indirectly become catalyst nuclei by electroless plating during subsequent processing is provided on the ceramic thin film layer, and the photosensitive layer is exposed in a pattern. A printed wiring characterized by depositing metal particles that can serve as catalyst nuclei for electroless plating on the original part, and removing a photosensitive layer on the unexposed parts, and then depositing a plating film on the exposed parts by electroless plating. This is a method of manufacturing a board.

次にこれらｔ−説明するが、先ず樹脂基板、例えばガラ
ス−エポキシ系積層板の表面をホーニング処理などの手
法で粗面化したのちこの表面に絶縁性、及び熱伝導性の
すぐれたセラミック材料を熔射してセラミック薄膜層を
形成する。この様にして得られたセラ建ツク薄膜層の断
面模式図を図に示した０図面中１は樹脂基板であ夛、２
は熔射されたセラミック薄膜層である。この図から判る
ように溶射条件を適切に選択するとセラミック薄膜層が
樹脂基板に強固に密着させることができ、更にセラミッ
ク薄膜層表面が多孔性でめっき膜を強固に密着させる条
件を備えている。溶射するセラミック材料としてはアル
建す、ジルコニア、マグネシア、チタニア、窒化ホウ素
、窒化アルミニクム尋を挙げることができ、これらのセ
ラミック材料は単独又は混合して用いることができる。Next, to explain these points, first, the surface of a resin substrate, such as a glass-epoxy laminate, is roughened by a method such as honing, and then a ceramic material with excellent insulation and thermal conductivity is coated on this surface. Spray to form a ceramic thin film layer. Figure 0 shows a schematic cross-sectional view of the ceramic-based thin film layer obtained in this way.
is a sprayed ceramic thin film layer. As can be seen from this figure, if the thermal spraying conditions are appropriately selected, the ceramic thin film layer can be firmly adhered to the resin substrate, and the surface of the ceramic thin film layer is porous, providing conditions for firmly adhering the plating film. Ceramic materials to be thermally sprayed include aluminum, zirconia, magnesia, titania, boron nitride, and aluminum nitride, and these ceramic materials can be used alone or in combination.

セラミック薄膜層の厚みは５〜５００μ好しくはｌＯ〜
２００μの範囲が適切である。５μ以下であると十分な
めつき膜の密着力が得られず、また５００μ以上である
と樹脂基板とセラミック薄膜層界面での密着力が低下す
るからである。The thickness of the ceramic thin film layer is 5 to 500μ, preferably lO to
A range of 200μ is suitable. If it is less than 5μ, sufficient adhesion of the plating film cannot be obtained, and if it is more than 500μ, the adhesion at the interface between the resin substrate and the ceramic thin film layer decreases.

ところでめっき膜の析出に先立ち、上記多孔性のセラミ
ック薄膜層に熱硬化性樹脂溶成を含浸させ、多孔性を幾
分抑制することができる。このようにすると、セラミッ
ク薄膜層の粒子間を、相互に結着させることができセラ
ミック薄膜ＮＩの機械的強度が増す他、めっき液が浸透
する深さを適轟に調節することができるため、樹脂基板
からの未反応成分等のめつき液の流出ｔ−はけ完全に抑
制することができる。By the way, prior to precipitation of the plating film, the porous ceramic thin film layer is impregnated with a thermosetting resin to suppress the porosity to some extent. In this way, the particles of the ceramic thin film layer can be bonded to each other, increasing the mechanical strength of the ceramic thin film NI, and the depth at which the plating solution penetrates can be appropriately adjusted. The outflow of plating solution such as unreacted components from the resin substrate can be completely suppressed.

次に本発明に使用される無寛解めっきＯＭ媒核を析出さ
せる為の感光性化合物について説明する。Next, the photosensitive compound for depositing the non-remitting plating OM nucleus used in the present invention will be explained.

感光性化合物としては、従来からこＯ分野で知られてい
るはとんど全てのものが適用される。感光性化合物の代
表例を表１に示した。この他、ダルタンン酸２銀塩、ヘ
テロ多重酸、塩化第２錫などが用いられる。セラミック
薄膜層上に感光層を設けるには、上記感光性化合物を単
独またはｍ元によりめっきの触媒核とな９得る金属塩類
を一緒に含む感光液を調製しこれらの感光液をセラミッ
ク薄膜層上に塗布、乾燥せしめればよい、感光性化合物
と金属塩類を一緒に含む感光層の場合、普通露光により
直接露光部分にめつき核が析出する。As the photosensitive compound, almost all compounds conventionally known in the photosensitive field can be used. Typical examples of photosensitive compounds are shown in Table 1. In addition, daltanic acid disilver salt, heteromultiacid, stannic chloride, etc. are used. In order to form a photosensitive layer on a ceramic thin film layer, a photosensitive solution containing the above-mentioned photosensitive compound alone or in combination with a metal salt that can serve as a catalyst nucleus for plating is prepared, and these photosensitive solutions are applied on the ceramic thin film layer. In the case of a photosensitive layer containing both a photosensitive compound and a metal salt, which can be simply coated and dried, plating nuclei will precipitate in the directly exposed areas upon normal exposure.

一方、感光層が感光性化合物単独から構成されている時
は普通露光後金属塩類に接触させて露光部分にめっきの
触媒核である金属粒子が析出する。On the other hand, when the photosensitive layer is composed of only a photosensitive compound, it is usually brought into contact with metal salts after exposure, and metal particles, which serve as catalyst nuclei for plating, are deposited in the exposed areas.

この他感光液中に、−調整剤、界面活性剤、錯化剤等を
含ませると、感光液の熱安定性、感光層の均−性等が改
善される。In addition, the thermal stability of the photosensitive liquid, the uniformity of the photosensitive layer, etc. can be improved by incorporating a regulator, a surfactant, a complexing agent, etc. into the photosensitive liquid.

／譬ターン状の露光後、未露光部分の感光層を除去する
と、触媒核／ｆターンが得られる０次に無電解めっき液
中に浸漬して所望Ｏ厚さにめっき膜を肉盛シするとプリ
ント配線板が得られる。無電解めっき液としては銅、ニ
ッケルＯ無電解めっき液が代表的であるがこの信金、銀
、などＯ無電解めっき液が使用できる。/ After exposure in the form of a pattern, removing the unexposed portion of the photosensitive layer will yield a catalyst nucleus / f-turn. When the plated film is overlaid to the desired O thickness by immersing it in an electroless plating solution, A printed wiring board is obtained. Typical electroless plating solutions include copper and nickel O electroless plating solutions, but other O electroless plating solutions such as Shinkin, silver, etc. can also be used.

発明の効果 本発明の製造方法によシ、導体回路が極めて優れ良書着
力を有し、かつ、めっき液の汚染に非常に有効なプリン
ト配線板を得ることに成功し良。Effects of the Invention By the manufacturing method of the present invention, it was possible to successfully obtain a printed wiring board which has an extremely excellent conductor circuit and good adhesion, and which is very effective against contamination of plating solution.

以下に実施例によ）具体的に本発明を説明する。EXAMPLES The present invention will be specifically explained below using Examples.

実施例１ ｆラスエＩキシ系樹脂基ｌ１１（厚さ１．６ｍ５）の表
面を８０メツシエのアル電す粉ｔｆンｒツラストとして
表面を粗化し友０表面の凹凸Ｏ山と谷の距離はｌＯ〜２
０μの範囲とした。Example 1 The surface of f-Lasue I xy-based resin base l11 (thickness 1.6 m5) was roughened by using 80 Metsushier's aluminum powder tfnr. ~2
The range was 0μ.

次いでデツズマ舒射機（オーメチコ社製　プラズマ７Ｍ
）てアルシン、窒素ｆスを用い１０〜４４＃Ｏ粒度分布
を持ち、９８％以上の純度を有するアルＺす粉を熔射し
友、溶射機のノズルを、基板全面に均一にアルＺす薄膜
層が得られる様に走査して平均５０μのアルミナ薄膜層
を形成した。Next was the Detsuzuma launcher (Plasma 7M manufactured by Ohmetiko)
) Using arsine and nitrogen gas, spray Al-Z powder with a particle size distribution of 10 to 44#O and a purity of 98% or higher, and use the nozzle of the thermal spraying machine to spray Al-Z powder uniformly over the entire surface of the substrate. An alumina thin film layer having an average thickness of 50 μm was formed by scanning so as to obtain a thin film layer.

次に、上記アルミナ薄膜層含有する、ガラスエＩキシ樹
脂基板を表２に示した感光液中に浸漬後、乾燥して感光
層を形成せしめた。Next, the glass oxide resin substrate containing the alumina thin film layer was immersed in the photosensitive solution shown in Table 2 and dried to form a photosensitive layer.

表２ 感覚液組成 塩化／ヤラジウム　　　　　　　　　２Ｐアンスラキノ
ンジスルホン酸ナトリウム　　　　　８１ノルビトール
　　　　　　　　１２０２ｎ−！タノール　　　　　　
　　５〇−ア建ノ酢５１２Ｆ 水　　　　　　　　　　　　　　　　９５〇−塩酸（３
５％）　　　　　　　−２に調整かくして設けた感光剤
層上にネガフィルムを密着させ紫外ＩＩ（強［８０帛Ｗ
／−）を６０秒照射し良、＊水洗１３０〜６０秒行なっ
たのち、表３よりなる無電解鋼めつき＠　（ＰＨ１２，
３、６０℃）に１８時間浸漬して、厚さ３５μの導体回
路層を有するプリント配線板を得た。クロスセクション
法によってスルーホールを観察したとζろ、スルーホー
ル内壁および表面回路部分にもめつきポイＶが全くみら
れず、めっき状態は良好であった。Table 2 Sensory fluid composition Chloride/Yaradium 2P Sodium anthraquinone disulfonate 81 Norbitol 1202n-! Tanol
50-Akenozu 512F Water 950-Hydrochloric acid (3
A negative film was brought into close contact with the photosensitive layer thus prepared, and ultraviolet II (strong [80 sheets W
/-) was irradiated for 60 seconds and passed. *After washing with water for 130 to 60 seconds, electroless steel plating as shown in Table 3 @ (PH12,
3, 60° C.) for 18 hours to obtain a printed wiring board having a conductive circuit layer with a thickness of 35 μm. When the through-hole was observed by a cross-section method, no plating spots were observed on the inner wall of the through-hole or on the surface circuit portion, and the plating condition was good.

表３ 無電解鋼めりき液組成 硫酸鋼　　０．０４隋ｏ１／Ｉ Ｅ　Ｄ　Ｔ　Ａ　　　　　　Ｏ，１Ｏｗ＆ｏｌ／１ホル
マりン　　　　　０．３０　ｍｏｌ／１シアン化カリウ
ム　　　　　　５　　　　Ｍｌ／１ジピリジル　　　　
　１０　　１１１１／１アセチノール”　　　　　　５
０　　　　岬／ｌ苛性ノー〆　　　　ＰＨＩＬ３に調整 畳日本す−ファクタント■製 アニオン系界面活性剤 かくして得られためつき回路をＪＩＳ　Ｃ−６４８１に
準拠して測定した結果、めっき膜の密着力２．０！／ｍ
、半田耐熱は１５０秒であシ、／これらＯｆ［ＦｉＪＩ
ＳＣ−６４８４で規定される。密着力１　＊　４　躬ｔ
、半田耐熱２０秒の規格値を超えるもので実用的に十分
な値である。Table 3 Electroless steel polishing liquid composition Sulfuric acid steel 0.04 o1/I E D T A O,1Ow&ol/1 Formalin 0.30 mol/1 Potassium cyanide 5 Ml/1 Dipyridyl
10 1111/1 acetinol” 5
0 Misaki / l Caustic no-final Adjusted to PHIL 3 Tatami Nippon Su-Factant ■ Anionic surfactant The resultant sticking circuit was measured in accordance with JIS C-6481, and the adhesion of the plating film was 2.0! /m
, soldering heat resistance is 150 seconds, /These Of[FiJI
Specified in SC-6484. Adhesion strength 1 * 4
, which exceeds the standard value of solder heat resistance of 20 seconds, which is a practically sufficient value.

実施例２ 実施例１の工程で感光層を設けるに先立ち、下記の工程
を行なう他は実施例１と同一の工程でプリント配線板を
得た。即ち、アル建す薄膜層形成俵、表４に示される絶
縁樹脂溶液に浸漬し、１５０℃、３０分間乾燥させアル
電す薄膜層表面に薄い絶縁倫脂膜を形成せしめた。Example 2 A printed wiring board was obtained in the same steps as in Example 1 except that the following steps were performed prior to providing the photosensitive layer in the steps in Example 1. That is, the thin film layer forming bales were immersed in the insulating resin solution shown in Table 4 and dried at 150° C. for 30 minutes to form a thin insulating resin film on the surface of the thin film layer.

表４ 絶縁樹脂１ｗ腋組成 かくして得られるめつ！膜の密着力は１．８に４／ｅｓ
、半田耐熱れ３分以上であった。Table 4 Insulating resin 1w armpit composition So obtained! The adhesion of the film is 1.8 to 4/es
The solder heat resistance was 3 minutes or more.

次に、上記アル建す薄膜Ｎを絶縁樹脂で保護した、ガラ
スエイキシ基板を感光層を設けることなく直接表３０無
電解銅めっき液中にめっき液に接触するガラスエ４キシ
基板の表面積のめつき敵容ｔに対する割シ合いが２　（
Ｉｄｌｌになる様に浸漬した。一般にこのような条件で
一定時閘毎にめっきの析出速度を“測定すると析出速度
が次第に低下して来る。５０時間浸漬した時のめつき析
出速１のめっき液建浴直後で得られるめっき析出速度に
対する割合を評価した結果、約９８％であり、アルミナ
溶射処理を行っていないｆラスエｆキシ系樹脂基板Ｏ値
９０％を上廻っていた。このことは、アルミナ薄ＩＩ層
がめつき液汚染に対して極めて有効であることを示して
いる。Next, a glass oxide substrate with the above-mentioned thin film N protected with an insulating resin was placed directly into an electroless copper plating solution without providing a photosensitive layer. The ratio to the capacity t is 2 (
It was immersed so that it became Idll. Generally, if the deposition rate of plating is measured at regular intervals under these conditions, the deposition rate will gradually decrease. As a result of evaluating the ratio to the speed, it was approximately 98%, which exceeded the O value of 90% for the f-lase resin substrate which had not been subjected to alumina thermal spraying treatment.This indicates that the alumina thin II layer was contaminated with the plating solution. It has been shown to be extremely effective against

実施例３ 実施１例２で用いたガラスエイキシ系樹脂基板Ｏ代９に
紙フェノ゛−ル糸樹脂基板を用いる以外は実施例２と同
一０手法でめっき回路を形成した。めつｔｋ膜の密着力
Ｆｉ、１．７ｂ／ａ＠半田耐熱は３０秒でＴｏ夛、これ
らの値は規格値である密着力１．２に４／ａｌ、半田耐
熱５秒を遥かに超えた実用的に申し分ない値であった。Example 3 A plating circuit was formed using the same method as in Example 2, except that a paper phenol thread resin substrate was used for the glass epoxy resin substrate used in Example 1 and Example 2. The adhesion force Fi of Metsu TK film is 1.7b/a @ soldering heat resistance is 30 seconds, and these values are 4/al to the standard value of adhesion force 1.2, which far exceeds the soldering heat resistance of 5 seconds. This value was satisfactory for practical purposes.

また、めつき液汚染に対する試験を実施例２と同様に行
った結果、めっき析出速度の減少率は約９５％でガラス
エ４キシ系樹脂基板の時と同様、極めて優れたものであ
った。Further, a test for plating solution contamination was carried out in the same manner as in Example 2, and as a result, the rate of decrease in plating deposition rate was approximately 95%, which was extremely excellent as in the case of the glass epoxy resin substrate.

比ＩＩＲ例１ 比較例として、従来から公知の樹脂基板上にニトリルゴ
ム系の接着剤層を設け、クロム酸系酸化剤で処理する、
めっき膜の密着力確保の手法について述べる。ガラスエ
ポキシ系樹脂基板上に表５に示した組成の接着剤溶液を
塗布し、９０Ｃで２０分間、さらに１６５０で４０分間
加熱乾燥を施し、厚さ約４０μの接着剤硬化ｌｉＩを形
成した。Comparative IIR Example 1 As a comparative example, a nitrile rubber adhesive layer was provided on a conventionally known resin substrate and treated with a chromic acid oxidizing agent.
This section describes methods for ensuring the adhesion of plating films. An adhesive solution having the composition shown in Table 5 was applied onto a glass epoxy resin substrate, and heated and dried at 90C for 20 minutes and then at 1650C for 40 minutes to form a cured adhesive liI with a thickness of about 40μ.

表５ 接着剤組成 ニトリルゴム（日本ゼオン■製、商品名　ハイカー１０
７２）の２０重量％メチルエチルケトン溶液 ・・・２５０重量部 フェノール樹脂（三菱瓦斯化学翰製、商品名二カノール
ＰＲ−１４４０Ｍ）の５０３ｆｔ％メタノール溶液・・
・　５０重量部 エポキシ樹脂（シェル石油化学＃Ｓ製、商品名エピコー
ト１００１）の８０重量％メチルエチルケトン溶液 ・・・３１重量部 酸無水物系硬化剤（日本化薬■製、商品名　カヤノ’−
）’ＣＬＡ）の２０重量％１チルセロソルゾ溶 液 ・・・１３重量部 シリカ粉末　　（日本アエロジル■製、商品名　参２０
０）・ｌ　ＯＸｉｔＭ 上記接着剤１を形成した樹脂基板を４０℃に加温された
無水クロム酸７　ｓ　ｙ／ｌ−濃硫酸３００ｓｆ／ｊ−
水（残余分）系酸化剤溶液に１５分間浸漬して、全面を
酸化処理し凹凸化した。こ０１１仕剤処理後、水洗し、
さらに３％の重亜硫酸ノーメ水溶液に浸漬し、過剰のク
ロムを中和した。然る後に、表２に示したＩＩＡ光液中
に浸漬後、乾燥して悪党層を形成した。以後の工程を実
施例１と同様に行なめ導体回路を形成し、回路特性を評
価した結果、密着力は、２　ａ　Ｏｂ／”　ｓ　半田耐
熱は３分以上で申し分ないものであつ九。Table 5 Adhesive composition Nitrile rubber (manufactured by Nippon Zeon ■, product name Hiker 10
72) 20 wt% methyl ethyl ketone solution...250 parts by weight 503 ft% methanol solution of phenol resin (manufactured by Mitsubishi Gas Chemical Kan, trade name Nikanol PR-1440M)...
- 80% by weight methyl ethyl ketone solution of 50 parts by weight epoxy resin (manufactured by Shell Petrochemical #S, trade name Epicote 1001)...31 parts by weight acid anhydride curing agent (manufactured by Nippon Kayaku ■, trade name Kayano'-
)'CLA) 20% by weight 1-tilcellosorzo solution...13 parts by weight Silica powder (manufactured by Nippon Aerosil ■, trade name: San 20)
0)・l OXitM Chromic anhydride 7 s y/l - concentrated sulfuric acid 300 sf/j - heated to 40°C on the resin substrate on which the adhesive 1 was formed
The entire surface was oxidized and made uneven by immersing it in a water (residue) oxidant solution for 15 minutes. 011 After treatment, wash with water,
Furthermore, it was immersed in a 3% bisulfite aqueous solution to neutralize excess chromium. Thereafter, it was immersed in the IIA light solution shown in Table 2 and dried to form a bad layer. The subsequent steps were carried out in the same manner as in Example 1 to form a conductive circuit, and the circuit characteristics were evaluated. As a result, the adhesion was 2 a Ob/'' s and the soldering heat resistance was satisfactory at 3 minutes or more.

しかし、上記の値は、公害上の慎重な管理を要するクロ
ム酸−硫酸を用いた結果であり、更に、悪いことに実施
例２と同様の手法を用いて、めっき液汚染ｔｙｓべた結
果、めっき析出速度の減少率−は７０％であ夛、本発明
に係る実施例１〜３に比較して極めて悪いものであった
。However, the above values are the result of using chromic acid-sulfuric acid, which requires careful control in terms of pollution.Even worse, using the same method as in Example 2, the plating solution was contaminated, resulting in poor plating. The rate of decrease in precipitation rate was 70%, which was extremely poor compared to Examples 1 to 3 according to the present invention.

【図面の簡単な説明】[Brief explanation of the drawing]

図面紘樹脂基板にセツンクク薄膜層が堆積した様子を示
す説明図である。FIG. 2 is an explanatory diagram showing how a thin film layer is deposited on a resin substrate.

Claims (1)

【特許請求の範囲】 １、　樹脂基板表面に絶縁性の竜うＺツク材料を溶射し
て竜うミック薄膜＊ｔ−形成し、少なくとも一種Ｏ感党
性化合−を含み、露光によｐ直接的に１えは、露光後の
処理によシ、間接的に無電解めつきＯ触媒核となり得る
金属粒子を析出せしめることが可能な感光層ｔ−該セラ
ミック薄膜層上に設け、該感光＃　ｔ−＃ターン状に露
光しｇ＋部分に無電解めっきの触媒核とな夛得る金属粒
子を析出せしめ、そして未露光部分の感光層を除去した
後に無電解めっきにより露光部分にめっき膜を析出させ
ることを特徴とするグリント配！Ｉ板の製造方法。 ２　＃セラミック薄膜層に熱硬ｆヒ性樹ｊ１１溶筐を含
浸させたことを特徴とする特許請求の範囲第１項記載Ｏ
ｆ’Ｊ７）配置Ｉ板の製造方法。[Claims] 1. An insulating Z-Tsuku material is thermally sprayed on the surface of a resin substrate to form a Z-type thin film *t-, which contains at least one type of O-sensitive compound, and which is directly exposed to light when exposed to light. 1) A photosensitive layer t is provided on the ceramic thin film layer, and the photosensitive layer t is capable of indirectly precipitating metal particles that can become electroless plating O catalyst nuclei through post-exposure treatment. -# Exposure in a turn pattern to deposit metal particles that can become catalyst nuclei for electroless plating on the g+ portion, and after removing the photosensitive layer on the unexposed portion, depositing a plating film on the exposed portion by electroless plating. Glint distribution featuring ! Method for manufacturing I plate. 2 #Claim 1, O, characterized in that the ceramic thin film layer is impregnated with thermosetting resin j11 molten casing.
f'J7) Method of manufacturing arrangement I plate.