JPS5787171A - Optical thyristor device - Google Patents
Optical thyristor deviceInfo
- Publication number
- JPS5787171A JPS5787171A JP55163902A JP16390280A JPS5787171A JP S5787171 A JPS5787171 A JP S5787171A JP 55163902 A JP55163902 A JP 55163902A JP 16390280 A JP16390280 A JP 16390280A JP S5787171 A JPS5787171 A JP S5787171A
- Authority
- JP
- Japan
- Prior art keywords
- light
- electrode
- photo
- pressure
- welded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 4
- 239000000835 fiber Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To efficiently guid a photo signal to the light-receiving region of the thyristor by a method wherein, when a photo thyristor is placed in a twoside pressure-welded sheath, a photo signal light-receiving window is provided on the pressure-welded electrode, an aperture section is provided on the sheath corresponding to the light-receiving window, and a photo signal transmitting material is inserted in the aperture section by coinciding the optical axis. CONSTITUTION:The metal plate 2, provided on the lower surface of the thyristor main body 1 consisting of Si, is fixed on the anodic pressure-welded electrode 3, and the cathode electrode 4, which was provided on the surface of the main body 1, is fixed on a cathode pressure-welded electrode 6 through the intermediary of a metal plate 5. In this constitution, a light-receiving window section 7, where a photo signal is led in, is provided on the cathode electrode 4 and the metal plate 5, and a metal cylinder 8 having a photo signal transmitting window 9 is passed through an electrode 6 and coaxially fitted and fixed on the electrode 6. Also, on the upper part of the cylinder 8, a cylindrical jig 18 is provided and a light guide 19, consisting of a bundle- type photo fiber, is inserted in the hole 17 which was provided in the jig 18, and the light sent from a light-emitting diode 23 can be guided to a light-receiving window section 7 by the light guide 19.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55163902A JPS5787171A (en) | 1980-11-20 | 1980-11-20 | Optical thyristor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55163902A JPS5787171A (en) | 1980-11-20 | 1980-11-20 | Optical thyristor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5787171A true JPS5787171A (en) | 1982-05-31 |
Family
ID=15782991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55163902A Pending JPS5787171A (en) | 1980-11-20 | 1980-11-20 | Optical thyristor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5787171A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61239665A (en) * | 1985-04-12 | 1986-10-24 | シ−メンス、アクチエンゲゼルシヤフト | Light ignitable thyristor |
JP2003524099A (en) * | 1999-11-30 | 2003-08-12 | ロバート ボッシュ ゲーエムベーハー | High pressure hydraulic fuel pump |
-
1980
- 1980-11-20 JP JP55163902A patent/JPS5787171A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61239665A (en) * | 1985-04-12 | 1986-10-24 | シ−メンス、アクチエンゲゼルシヤフト | Light ignitable thyristor |
JP2003524099A (en) * | 1999-11-30 | 2003-08-12 | ロバート ボッシュ ゲーエムベーハー | High pressure hydraulic fuel pump |
JP4902923B2 (en) * | 1999-11-30 | 2012-03-21 | ロバート ボッシュ ゲーエムベーハー | High pressure hydraulic fuel pump |
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