JPS5785281A - Fixing system for oscillation wavelength of semiconductor laser by diffraction grating - Google Patents
Fixing system for oscillation wavelength of semiconductor laser by diffraction gratingInfo
- Publication number
- JPS5785281A JPS5785281A JP16226980A JP16226980A JPS5785281A JP S5785281 A JPS5785281 A JP S5785281A JP 16226980 A JP16226980 A JP 16226980A JP 16226980 A JP16226980 A JP 16226980A JP S5785281 A JPS5785281 A JP S5785281A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- diffraction grating
- laser
- rays
- diffraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To select oscillation wavelength continuously while ignoring the change of oscillation intensity by forming a reflection preventive film on an end surface at the diffraction grating side of the semiconductor laser. CONSTITUTION:Rays emitted by an active layer 1 of the semiconductor laser are changed into parallel rays by means of a collimator 5, and projected to the diffraction grating 6, diffraction rays having lambda0 wavelength are fed back to the active layer 1 of the semiconductor laser again by means of the collimator 5, and the oscillation wavelength of the semiconductor laser is fixed at lambda0. The reflection preventive film 3 is formed onto the end surface 2 at the diffraction grating side of the semiconductor laser, laser action only by a semiconductor laser proper is prevented or the laser action is minimized extremely even when the laser action is conducted, and laser oscillation generated only by the diffraction rays of the diffraction grating 6 or almost by the diffraction rays is conducted.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16226980A JPS5785281A (en) | 1980-11-17 | 1980-11-17 | Fixing system for oscillation wavelength of semiconductor laser by diffraction grating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16226980A JPS5785281A (en) | 1980-11-17 | 1980-11-17 | Fixing system for oscillation wavelength of semiconductor laser by diffraction grating |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5785281A true JPS5785281A (en) | 1982-05-27 |
Family
ID=15751240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16226980A Pending JPS5785281A (en) | 1980-11-17 | 1980-11-17 | Fixing system for oscillation wavelength of semiconductor laser by diffraction grating |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5785281A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0240293A2 (en) * | 1986-03-31 | 1987-10-07 | Matsushita Electric Industrial Co., Ltd. | Frequency stabilized light source |
EP0500357A2 (en) * | 1991-02-19 | 1992-08-26 | Nec Corporation | Optical fiber dispersion-compensating device |
EP0924821A1 (en) * | 1997-12-18 | 1999-06-23 | Nec Corporation | External mirror type wavelength tunable laser |
-
1980
- 1980-11-17 JP JP16226980A patent/JPS5785281A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0240293A2 (en) * | 1986-03-31 | 1987-10-07 | Matsushita Electric Industrial Co., Ltd. | Frequency stabilized light source |
EP0500357A2 (en) * | 1991-02-19 | 1992-08-26 | Nec Corporation | Optical fiber dispersion-compensating device |
US5243610A (en) * | 1991-02-19 | 1993-09-07 | Nec Corporation | Optical fiber dispersion-compensating device |
EP0924821A1 (en) * | 1997-12-18 | 1999-06-23 | Nec Corporation | External mirror type wavelength tunable laser |
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