JPS577930A - Method for electron beam exposure and apparatus used in said method - Google Patents
Method for electron beam exposure and apparatus used in said methodInfo
- Publication number
- JPS577930A JPS577930A JP8238680A JP8238680A JPS577930A JP S577930 A JPS577930 A JP S577930A JP 8238680 A JP8238680 A JP 8238680A JP 8238680 A JP8238680 A JP 8238680A JP S577930 A JPS577930 A JP S577930A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- moves
- electron
- high frequency
- screening plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To control the amount of exposure without changing the conditions of an electron gun, by applying a high frequency voltage on an electron beam deflection device, vibrating the electron beam at a right angle, passing the beam through a screening plate having an opening, and controlling the pulse width of the pulse shaped beam. CONSTITUTION:The high frequency voltage is applied on the reflecting plates 11 of the electron beam exposing apparatus, and the high frequency alternating field is formed. The electron beam 2 is deflected by the electric field and vibrate as shown by an arrow 16. The electron beam 2 passes through a screening plate 14 when the beam moves from A to B. When the electron beam exceeds B, it is screened by the screening plate 14, and is not sent out. This state continues until the beam moves from B to C and B again. The electron beam passes the opening 17 when it moves from B to A and to D. The beam is not sent out when it moves from D to E and D again. In this method, the electron beam is transformed into a pulse shaped beam, and the amount of exposure can be readily and precisely controlled without changing the conditions of the electron gun.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8238680A JPS577930A (en) | 1980-06-18 | 1980-06-18 | Method for electron beam exposure and apparatus used in said method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8238680A JPS577930A (en) | 1980-06-18 | 1980-06-18 | Method for electron beam exposure and apparatus used in said method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS577930A true JPS577930A (en) | 1982-01-16 |
Family
ID=13773136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8238680A Pending JPS577930A (en) | 1980-06-18 | 1980-06-18 | Method for electron beam exposure and apparatus used in said method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS577930A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09205063A (en) * | 1996-12-09 | 1997-08-05 | Fujitsu Ltd | Charged particle beam exposing method |
JP2007189206A (en) * | 2005-12-15 | 2007-07-26 | Nuflare Technology Inc | Charged particle beam lithography method and apparatus thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5186355A (en) * | 1975-01-27 | 1976-07-28 | Nippon Electron Optics Lab |
-
1980
- 1980-06-18 JP JP8238680A patent/JPS577930A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5186355A (en) * | 1975-01-27 | 1976-07-28 | Nippon Electron Optics Lab |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09205063A (en) * | 1996-12-09 | 1997-08-05 | Fujitsu Ltd | Charged particle beam exposing method |
JP2007189206A (en) * | 2005-12-15 | 2007-07-26 | Nuflare Technology Inc | Charged particle beam lithography method and apparatus thereof |
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