JPS5762672A - Solid-state image pickup sensor - Google Patents

Solid-state image pickup sensor

Info

Publication number
JPS5762672A
JPS5762672A JP55135824A JP13582480A JPS5762672A JP S5762672 A JPS5762672 A JP S5762672A JP 55135824 A JP55135824 A JP 55135824A JP 13582480 A JP13582480 A JP 13582480A JP S5762672 A JPS5762672 A JP S5762672A
Authority
JP
Japan
Prior art keywords
depletion
carrying
carrying gate
gate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55135824A
Other languages
Japanese (ja)
Other versions
JPS627751B2 (en
Inventor
Tetsuo Yamada
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55135824A priority Critical patent/JPS5762672A/en
Publication of JPS5762672A publication Critical patent/JPS5762672A/en
Publication of JPS627751B2 publication Critical patent/JPS627751B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent the production of noise component due to static capacitance coupling and to increase carrying speed, by forming a plurality of impurity layers with opposite conduction type on a conductive type semiconductor substrate through completed depletion. CONSTITUTION:A plurality of N type impurity layers 30 are formed on a P type semiconductor substrate 8 through complete depletion. Broken lines 37 are surface potential under carrying gate when a carrying gate 10 is opened and signal electrons are carried toward the arrow 41. Since the potential 35 is completely in depletion, the signal charge to be stored in present in a potential well only formed under a storage electrode 9. On the other hand, in opening the carrying gate 10, since the time carried with signal electrons is almost proportional to the square of channel length of stored region, the speed is increased by the share of Ln. Since the N type impurity layer is completely in depletion, no potentials 33, 34 are varied through the capacitive coupling of carrying gate.
JP55135824A 1980-10-01 1980-10-01 Solid-state image pickup sensor Granted JPS5762672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55135824A JPS5762672A (en) 1980-10-01 1980-10-01 Solid-state image pickup sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55135824A JPS5762672A (en) 1980-10-01 1980-10-01 Solid-state image pickup sensor

Publications (2)

Publication Number Publication Date
JPS5762672A true JPS5762672A (en) 1982-04-15
JPS627751B2 JPS627751B2 (en) 1987-02-19

Family

ID=15160645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55135824A Granted JPS5762672A (en) 1980-10-01 1980-10-01 Solid-state image pickup sensor

Country Status (1)

Country Link
JP (1) JPS5762672A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58173981A (en) * 1982-04-05 1983-10-12 Copal Co Ltd Electronic still camera
JPS58187082A (en) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd Driving method of solid-state image pickup device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6973316B2 (en) 2018-07-19 2021-11-24 オムロン株式会社 Power converter
JP6954240B2 (en) 2018-07-19 2021-10-27 オムロン株式会社 Power converter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51150288A (en) * 1975-06-09 1976-12-23 Philips Nv Video sensor
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device
JPS54111798A (en) * 1978-02-22 1979-09-01 Toshiba Corp Image sensor of charge transfer type

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51150288A (en) * 1975-06-09 1976-12-23 Philips Nv Video sensor
GB1557238A (en) * 1975-06-09 1979-12-05 Philips Electronic Associated Image sensor device
JPS5437422A (en) * 1977-08-29 1979-03-19 Toshiba Corp Solid state pickup device
JPS54111798A (en) * 1978-02-22 1979-09-01 Toshiba Corp Image sensor of charge transfer type

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58173981A (en) * 1982-04-05 1983-10-12 Copal Co Ltd Electronic still camera
JPS58187082A (en) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd Driving method of solid-state image pickup device
JPH0414551B2 (en) * 1982-04-26 1992-03-13 Matsushita Electric Ind Co Ltd

Also Published As

Publication number Publication date
JPS627751B2 (en) 1987-02-19

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