JPS5762573A - Multiple wavelength photoelectric converter - Google Patents

Multiple wavelength photoelectric converter

Info

Publication number
JPS5762573A
JPS5762573A JP55138313A JP13831380A JPS5762573A JP S5762573 A JPS5762573 A JP S5762573A JP 55138313 A JP55138313 A JP 55138313A JP 13831380 A JP13831380 A JP 13831380A JP S5762573 A JPS5762573 A JP S5762573A
Authority
JP
Japan
Prior art keywords
multiple wavelength
lights
signals
light
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55138313A
Other languages
Japanese (ja)
Inventor
Kazuo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55138313A priority Critical patent/JPS5762573A/en
Publication of JPS5762573A publication Critical patent/JPS5762573A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body

Landscapes

  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To enable the conversion of multiple wavelength light signals to be transmitted independently into an electric signal via one element by planarly integrating a plurality of photoelectric converters for converting the light signals of different wavelengths selectively into electric signals. CONSTITUTION:Three photoelectric converters 1, 2, 3 are aligned on an N<+> type InP substrate and are made of InGaAs compound semiconductor. The light absorption layers 13, 14, 15 respectively absorb the lights of wavelengths lambda1, lambda2, lambda3 for the multiple wavelength input lights lambda1, lambda2, lambda3. The photoelectric converter elements are insulated and isolated via a proton illumination high resistance layer 18. Reverse bias voltage is applied to the P-N junction of the photoreceptor via electrodes 31, 32, the input light of the respective wavelength can be converted into electric signals as the variations in the output voltages V1, V2, V3 upon projection of the lights. In this manner, the light signals of the multiple wavelength can be independently converted into electric signals via one element, thereby simplifying the configuration of the converter and reducing the size of the converter.
JP55138313A 1980-10-03 1980-10-03 Multiple wavelength photoelectric converter Pending JPS5762573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55138313A JPS5762573A (en) 1980-10-03 1980-10-03 Multiple wavelength photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55138313A JPS5762573A (en) 1980-10-03 1980-10-03 Multiple wavelength photoelectric converter

Publications (1)

Publication Number Publication Date
JPS5762573A true JPS5762573A (en) 1982-04-15

Family

ID=15218964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55138313A Pending JPS5762573A (en) 1980-10-03 1980-10-03 Multiple wavelength photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5762573A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63269572A (en) * 1987-04-27 1988-11-07 Nec Corp Semiconductor photodetector of wavelength multiple discrimination type
JPS6476779A (en) * 1987-09-17 1989-03-22 Nec Corp Wavelength multiplex discrimination type semiconductor photodetector
JPH01140678A (en) * 1987-11-26 1989-06-01 Matsushita Electric Ind Co Ltd Photodetector
JPH04234170A (en) * 1990-09-12 1992-08-21 Philips Gloeilampenfab:Nv Infrared detection device responsive to plurality of wavelengths
US5144397A (en) * 1989-03-03 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Light responsive semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63269572A (en) * 1987-04-27 1988-11-07 Nec Corp Semiconductor photodetector of wavelength multiple discrimination type
JPS6476779A (en) * 1987-09-17 1989-03-22 Nec Corp Wavelength multiplex discrimination type semiconductor photodetector
JPH01140678A (en) * 1987-11-26 1989-06-01 Matsushita Electric Ind Co Ltd Photodetector
US5144397A (en) * 1989-03-03 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Light responsive semiconductor device
JPH04234170A (en) * 1990-09-12 1992-08-21 Philips Gloeilampenfab:Nv Infrared detection device responsive to plurality of wavelengths

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