JPS5762571A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JPS5762571A JPS5762571A JP55137674A JP13767480A JPS5762571A JP S5762571 A JPS5762571 A JP S5762571A JP 55137674 A JP55137674 A JP 55137674A JP 13767480 A JP13767480 A JP 13767480A JP S5762571 A JPS5762571 A JP S5762571A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- boron
- solar battery
- covered
- injected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 5
- 229910052796 boron Inorganic materials 0.000 abstract 5
- 150000002500 ions Chemical class 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 230000003213 activating effect Effects 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To enhance the efficiency of a solar battery by adding at least boron and Ge or boron, hydrogen and Ge to an Si solar battery Pn or Pin structure of form a P type layer. CONSTITUTION:Boron is introduced by an ion injection method from the main surface 1 side of an N type single crystalline Si substrate 1. Then, the Ge ions are injected. An annealing for electrically activating the boron is carried out to form a P type layer 5. The peak density of boron injected layer is high density layer, is electrically activated by the effect of the addition of the Ge, thereby reducing the resistivity. An ohmic electrode 6 is covered on the layer 5, and an electrode 7 is covered on the layer 1 as a solar battery. In this manner, the P type layer having low resistivity and mechanical stability can be formed, thereby enhancing the effici- ency of the solar battery.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55137674A JPS5762571A (en) | 1980-10-03 | 1980-10-03 | Solar battery |
GB8128646A GB2086135B (en) | 1980-09-30 | 1981-09-22 | Electrode and semiconductor device provided with the electrode |
DE3138544A DE3138544C2 (en) | 1980-09-30 | 1981-09-28 | Semiconductor component |
FR8118316A FR2491260B1 (en) | 1980-09-30 | 1981-09-29 | COMPOSITE LAYER ELECTRODE AND SEMICONDUCTOR DEVICE PROVIDED WITH SAME |
NLAANVRAGE8104443,A NL189271C (en) | 1980-09-30 | 1981-09-29 | SEMICONDUCTOR DEVICE. |
CA000386975A CA1171977A (en) | 1980-09-30 | 1981-09-30 | Electrode and semiconductor device provided with the electrode |
US06/626,487 US4521794A (en) | 1980-09-30 | 1984-07-03 | Electrode and semiconductor device provided with the electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55137674A JPS5762571A (en) | 1980-10-03 | 1980-10-03 | Solar battery |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59065470A Division JPS6063968A (en) | 1984-04-02 | 1984-04-02 | Solar battery |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5762571A true JPS5762571A (en) | 1982-04-15 |
Family
ID=15204162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55137674A Pending JPS5762571A (en) | 1980-09-30 | 1980-10-03 | Solar battery |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5762571A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59198780A (en) * | 1983-04-26 | 1984-11-10 | Nippon Denso Co Ltd | Amorphous silicon carbide series semiconductor |
JP2019110185A (en) * | 2017-12-18 | 2019-07-04 | 株式会社アルバック | Manufacturing method of solar battery |
JP2022521593A (en) * | 2019-02-21 | 2022-04-11 | ニヴァロックス-ファー ソシエテ アノニム | Black photovoltaic device |
-
1980
- 1980-10-03 JP JP55137674A patent/JPS5762571A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59198780A (en) * | 1983-04-26 | 1984-11-10 | Nippon Denso Co Ltd | Amorphous silicon carbide series semiconductor |
JPH0614553B2 (en) * | 1983-04-26 | 1994-02-23 | 日本電装株式会社 | Amorphous silicon carbide based semiconductor and manufacturing method thereof |
JP2019110185A (en) * | 2017-12-18 | 2019-07-04 | 株式会社アルバック | Manufacturing method of solar battery |
JP2022521593A (en) * | 2019-02-21 | 2022-04-11 | ニヴァロックス-ファー ソシエテ アノニム | Black photovoltaic device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW340959B (en) | Control of junction depth and channel length using generated interstitial gradients to oppose dopant diffusion | |
JPS56116673A (en) | Amorphous thin film solar cell | |
JPS5752176A (en) | Semiconductor device | |
JPS6468977A (en) | Tandem solar battery module | |
JPS649658A (en) | Gto thyristor | |
JPS5762571A (en) | Solar battery | |
JPS5752179A (en) | Photoconductive member | |
JPS5752180A (en) | Photoconductive member | |
JPS6466932A (en) | Epitaxial silicon wafer | |
JPS57178369A (en) | Gate turnoff thyristor | |
JPS5595376A (en) | Solar cell interconnector | |
ES8404570A1 (en) | Cadmium sulphide solar cells. | |
JPS56114384A (en) | Solar battery | |
JPS56130977A (en) | Solar battery | |
JPS5694677A (en) | Manufacture of amorphous semiconductor device | |
JPS5661175A (en) | Thin-film solar cell | |
JPS577963A (en) | Charge transfer element | |
JPS646374A (en) | Lead storage battery | |
JPS6441278A (en) | Manufacture of thin film photovoltaic element | |
JPS5588366A (en) | Semiconductor device | |
JPS5615929A (en) | Method and device for restoring electrode in electospark machining device | |
JPS5595375A (en) | Manufacture of solar cell | |
JO1779B1 (en) | Method for manufacture of a solar cell and solar cell | |
JPS54154282A (en) | Semiconductor device | |
JPS5732687A (en) | Manufacture of magnetoelectric transducer |