JPS5759388A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS5759388A JPS5759388A JP55134552A JP13455280A JPS5759388A JP S5759388 A JPS5759388 A JP S5759388A JP 55134552 A JP55134552 A JP 55134552A JP 13455280 A JP13455280 A JP 13455280A JP S5759388 A JPS5759388 A JP S5759388A
- Authority
- JP
- Japan
- Prior art keywords
- floating gate
- insulating layer
- layer
- gate
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 230000010354 integration Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To achieve high integration without decreasing writing efficiency, by embedding a floating gate in an insulating layer provided on a surface of a substrate, and inserting first and second control gates which are electrically connected via an insulating layer above and below the floating gate. CONSTITUTION:The floating gate 22 is embedded in the insulating layer 21 provided on the surface of the semiconductor substrate 20. The first and second control gates 23 and 24 which are electrically connected are inserted above and below the floating gate 22 via the insulating layer 21. For example, above the silicon dioxide insulating film 21 provided on the surface 201 of the P layer silicon substrate 20, three layers, i.e., the first polysilicon control gate 23, the floating gate layer 22 which is in an electrically floating state, and the second control gate layer 24 which is embedded below extended parts 221 at both ends and is connected with the first control gate 23 by a connecting means 25 are provided. In this constitution, high integration is achieved without decreasing writing efficiency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55134552A JPS5759388A (en) | 1980-09-27 | 1980-09-27 | Semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55134552A JPS5759388A (en) | 1980-09-27 | 1980-09-27 | Semiconductor storage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5759388A true JPS5759388A (en) | 1982-04-09 |
Family
ID=15130981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55134552A Pending JPS5759388A (en) | 1980-09-27 | 1980-09-27 | Semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5759388A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01142179A (en) * | 1987-11-30 | 1989-06-05 | Furukawa Co Ltd | Sky parking device |
| US5378910A (en) * | 1992-07-08 | 1995-01-03 | Kabushiki Kaisha Toshiba | Memory transistor having increased interelectrode capacitance |
| JPH09199619A (en) * | 1996-01-03 | 1997-07-31 | Lg Semicon Co Ltd | Nonvolatile memory device and its fabrication method |
-
1980
- 1980-09-27 JP JP55134552A patent/JPS5759388A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01142179A (en) * | 1987-11-30 | 1989-06-05 | Furukawa Co Ltd | Sky parking device |
| US5378910A (en) * | 1992-07-08 | 1995-01-03 | Kabushiki Kaisha Toshiba | Memory transistor having increased interelectrode capacitance |
| JPH09199619A (en) * | 1996-01-03 | 1997-07-31 | Lg Semicon Co Ltd | Nonvolatile memory device and its fabrication method |
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