JPS5754375A - Mis semiconductor memeory device - Google Patents

Mis semiconductor memeory device

Info

Publication number
JPS5754375A
JPS5754375A JP12964680A JP12964680A JPS5754375A JP S5754375 A JPS5754375 A JP S5754375A JP 12964680 A JP12964680 A JP 12964680A JP 12964680 A JP12964680 A JP 12964680A JP S5754375 A JPS5754375 A JP S5754375A
Authority
JP
Japan
Prior art keywords
film
insulating film
gate
substrate
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12964680A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12964680A priority Critical patent/JPS5754375A/en
Publication of JPS5754375A publication Critical patent/JPS5754375A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To prevent a short circuit between a floating gate and a substrate by using a minute region of one part of a gate insulating film between the floating gate and the substrate as a tunnel barrier film containing a silicon nitride film. CONSTITUTION:P<+> type source 2 and drain 3 are formed to the N type Si substrate 1. The floating gate (polycrystalline silicon) 5 is shaped through the first insulating film (SiO2) 4, and a gate electrode 7 in aluminum is molded on the gate 5 through the second insulating film (SiO2) 6. The Si3N4 film 8 as the tunnel barrier film such as a film with a 1mu diameter and 20-200Angstrom thickness is formed to the minute region of one part of the first insulating film 4.
JP12964680A 1980-09-18 1980-09-18 Mis semiconductor memeory device Pending JPS5754375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12964680A JPS5754375A (en) 1980-09-18 1980-09-18 Mis semiconductor memeory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12964680A JPS5754375A (en) 1980-09-18 1980-09-18 Mis semiconductor memeory device

Publications (1)

Publication Number Publication Date
JPS5754375A true JPS5754375A (en) 1982-03-31

Family

ID=15014658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12964680A Pending JPS5754375A (en) 1980-09-18 1980-09-18 Mis semiconductor memeory device

Country Status (1)

Country Link
JP (1) JPS5754375A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245578A (en) * 1985-04-23 1986-10-31 Seiko Instr & Electronics Ltd Semiconductor nonvolatile memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61245578A (en) * 1985-04-23 1986-10-31 Seiko Instr & Electronics Ltd Semiconductor nonvolatile memory

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