JPS5751193A - Manufacture of semiconductor material - Google Patents

Manufacture of semiconductor material

Info

Publication number
JPS5751193A
JPS5751193A JP11756381A JP11756381A JPS5751193A JP S5751193 A JPS5751193 A JP S5751193A JP 11756381 A JP11756381 A JP 11756381A JP 11756381 A JP11756381 A JP 11756381A JP S5751193 A JPS5751193 A JP S5751193A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11756381A
Other languages
English (en)
Inventor
Uiriamu Baado Jiyon
Uiriamu Gatsutsushie Henrii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Co
Original Assignee
Monsanto Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Co filed Critical Monsanto Co
Publication of JPS5751193A publication Critical patent/JPS5751193A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/025—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP11756381A 1980-07-28 1981-07-27 Manufacture of semiconductor material Pending JPS5751193A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17250880A 1980-07-28 1980-07-28

Publications (1)

Publication Number Publication Date
JPS5751193A true JPS5751193A (en) 1982-03-25

Family

ID=22627997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11756381A Pending JPS5751193A (en) 1980-07-28 1981-07-27 Manufacture of semiconductor material

Country Status (2)

Country Link
EP (1) EP0045191A1 (ja)
JP (1) JPS5751193A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062315A (en) * 1990-04-20 1991-11-05 Yoshigai Kikai Kinzoku Co., Ltd. Device for preventing disengagement of an inner wire of a Bowden cable from a bicycle brake operating lever
US7244099B2 (en) 2003-05-01 2007-07-17 Daikin Industries, Ltd. Multi-vane centrifugal fan
AU2007234497B2 (en) * 2007-01-29 2010-05-20 Mitsubishi Electric Corporation Multiblade centrifugal blower
JP2011157235A (ja) * 2010-02-02 2011-08-18 Hitachi Kokusai Electric Inc 結晶製造装置及び結晶製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI458854B (zh) * 2008-06-23 2014-11-01 Gtat Corp 在化學氣相沉積反應器中用於管絲的夾頭及電橋之連接點
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3152022A (en) * 1962-05-25 1964-10-06 Bell Telephone Labor Inc Epitaxial deposition on the surface of a freshly grown dendrite
GB1112140A (en) * 1966-05-27 1968-05-01 Dow Corning A method and apparatus for the continuous production of semiconductor materials

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062315A (en) * 1990-04-20 1991-11-05 Yoshigai Kikai Kinzoku Co., Ltd. Device for preventing disengagement of an inner wire of a Bowden cable from a bicycle brake operating lever
US7244099B2 (en) 2003-05-01 2007-07-17 Daikin Industries, Ltd. Multi-vane centrifugal fan
AU2007234497B2 (en) * 2007-01-29 2010-05-20 Mitsubishi Electric Corporation Multiblade centrifugal blower
AU2007234497B8 (en) * 2007-01-29 2010-07-01 Mitsubishi Electric Corporation Multiblade centrifugal blower
US7967557B2 (en) 2007-01-29 2011-06-28 Mitsubishi Electric Corporation Multiblade centrifugal blower
JP2011157235A (ja) * 2010-02-02 2011-08-18 Hitachi Kokusai Electric Inc 結晶製造装置及び結晶製造方法

Also Published As

Publication number Publication date
EP0045191A1 (en) 1982-02-03

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